Silicon oxide (SiOx) has been considered one of the most promising anode materials for lithium-ion batteries due to having a higher capacity than the commercial graphite anodes. However, its practical application is hampered by very large volume variations. In this work, pyrolysis fuel oil is the carbon coating precursor, and physical vapor deposition (PVD) is performed on SiOx at 200 and 400 °C (SiOx@C 200 and SiOx@C 400), followed by carbonization at 950 °C. SiOx@C 200 has a carbon coating layer with a thickness of ~ 20 nm and an amorphous structure, while that of SiOx@C 400 is approximately 10 nm thick and has a more semigraphitic structure. The carbon-coated SiOx anodes display better charge–discharge performance than the pristine SiOx anode. In particular, SiOx@C 200 shows the highest reversible capacity compared with the other samples at high C-rates (2.0 and 5.0 C). Moreover, SiOx@C 200 exhibits excellent cycling stability with a capacity retention of 90.2% after 80 cycles at 1.0 C. This result is ascribed to the suppressed volume expansion by the PFO carbon coating on SiOx after PVD.

Anodic aluminum oxide (AAO) has been widely used for the development and fabrication of nano-powder with various morphologies such as particle, wire, rod, and tube. So far, many researchers have reported about shape control and fabrication of AAO films. However, they have reported on the shape control with different diameter and length of anodic aluminum oxide mainly. We present a combined mild-hard (or hard-mild) anodization to prepare shape-controlled AAO films. Two main parameters which are combination mild-hard (or hard-mild) anodization and run-time of voltage control are applied in this work. The voltages of mild and hard anodization are respectively 40 and 80 V. Anodization was conducted on the aluminum sheet in 0.3 mole oxalic acid at 4oC. AAO films with morphologies of varying interpore distance, branch-shaped pore, diameter-modulated pore and long funnel-shaped pore were fabricated. Those shapes will be able to apply to fabricate novel nano-materials with potential application which is especially a support to prevent volume expansion of inserted active materials, such as metal silicon or tin powder, in lithium ion battery. The silicon powder electrode using an AAO as a support shows outstanding cycle performance as 1003 mAh/g up to 200 cycles.

Purpose: Various studies have been conducted on macromolecular materials that not only have basic characteristics but also UV-blocking capabilities. Here we report tinted hydrogel contact lens containing titanium silicon oxide nanoparticles. This study also showed the physical and optical effects of 4-iodoaniline on contact lenses, which affect UV transmissibility. Methods: Titanium silicon oxide nanoparticles were used as additives. HEMA, MA, MMA, 4-iodoaniline and a cross-linker EGDMA were copolymerized in the presence of AIBN as an initiator. The physical properties such as water content, refractive index, contact angle, spectral transmittance of produced contact lenses were measured. Results: Measurement of the physical characteristics of the copolymerized material showed the water content of 38.68~35.01%, refractive index of 1.4350~1.4418, contact angel of 34.15~57.25° and spectral transmittance of 1.0~84.8%. Also, the transmittance for UV light was reduced significantly in combinations containing titanium silicon oxide nanoparticles. Conclusions: Tinted hydrogel contact lens material containing titanium silicon oxide nanoparticles is expected to be able to be used usefully as a material for UV-block hydrogel contact lens.

This study shows the effects of deionized (DI) rinse and oxide HF wet etch processes on silicon substrate during a photolithography process. We found a fail at the wafer center after DI rinse step, called Si pits, during the fabrication of a complementary metal-oxide-semiconductor (CMOS) device. We tried to find out the mechanism of the Si pits by using the silicon wafer on CMOS fabrication and analyzing the effects of the friction charge induced by the DI rinsing. The key parameters of this experiment were revolution per minute (rpm) and time. An incubation time of above 10 sec was observed for the formation of Si pits and the rinsing time was more effective than rpm on the formation of the Si pits. The formation mechanism of the Si pits and optimized rinsing process parameters were investigated by measuring the charging level using a plasma density monitor. The DI rinse could affect the oxide substrate by a friction charging phenomenon on the photolithography process. Si pits were found to be formed on the micro structural defective site on the Si substrate under acceleration by developed and accumulated charges during DI rinsing. The optimum process conditions of DI rinse time and rpm could be established through a systematic study of various rinsing conditions.

다공질 실리콘층(Porous Silicon LayerLPSL)을 사용하여 저온 열산화 (500˚C, 1시간)와 급속 열산화공정(rapid thermal oxidationLRTO)(1150˚C, 1분)을 통하여 저온 산화막을 제조하였다. 제조된 산화막의 특성을 IR흡수 스펙트럼, C-V 곡선, 절연파괴전압, 누설전류, 그리고 굴절률을 조사함으로써 알아보았다. 절연파괴전압은 2.7MV/cm, 누설전류는 0-50V 범위에서 100-500pA의 값을 보였다. 산화막의 굴절률은 1.49의 값으로서 열산화막의 굴절률에 근접한 값을 나타냈다. 이 결과로부터 다공질 실리콘층을 저온산화막으로 제조할 때, RTO공정이 산화막의 치밀화(densification)에 크게 기여함을 알 수 있었다.

반도체 소자가 점점 고집적회되고 고성능화되면서 Si 기판 세정 방법은 그 중요성이 더욱 더 커지고 있다. 특히 ULSI급 소자에서는 세정 방법이 소자 생산수율 및 신뢰성에 큰 영향을 끼치고 있다. 본 연구에서는 HF-last 세정에 UV/O3과 SC-1 세정을 삽입하여 그 영향을 관찰하였다. 세정 방법은 HF-last 세정을 기본으로 split 1(piranha+HF), split 2(piranha+UV/O3+HF), split 3(piraha+SC-1+HF), split 4(piranha+(UV/O3+HF) x3회 반복)의 4가지 세정 방법으로 나누어 실험하였다. 세정을 마친 Si 기판은 Total X-Ray Fluorescence Spectroscopy(AFM)을 사용하여 표면거칠기를 측정하였다. 또한 세정류량을 측정하고, Atomic Force Microscopy(AFM)을 사용하여 표면거칠기를 측정하였다. 또한 세정후 250Å의 gate 산화막을 성장시켜 전기적 특성을 측정하였다. UV/O3을 삽입한 split 2와 split 4세정방법이 물리적, 전기적 특성에서 우수한 특성을 나타냈고, SC-1을 삽입한 split 3세정 방법이 표준세정인 split 1세정 방법보다 우수하지 못한 결과를 나타냈다.

SOG박막 밑에 층간 절연박으로 사용하는 PECVD산화막을 Si rich산화막으로 만들어 줌으로써 실리콘 dangling bond가 수소원자나 수분과 결합하여 SOG박막으로 부터 침투되는 수소원자나 수분의 확산을 억제하므로서 소작 열화되는 것을 방지한다. 이러한 Si rich산화막의 기본 특성을 알아보기 위하여 LF/HF power비와 SiH4/N2O gas유량비를 변화시켜서 박막 특성을 조사하였다. 저주파 power만 변화시킨 경우, 증착속도가 감소하고 굴절율과 압축응력에 증가하며 FTIR에서 3300cm-1~3800cm-1영역의 수분에 의한 peak이 감소하는 것으로 보아 박막이 치밀해짐을 알 수 있고, SiH4기체유량을 증가시킨 경우엔 증착속도, 굴절율, 식각속도는 증가하나 압축응력은 감소한다. FTIR에서 Si-O-Si peak의 세기가 감소하고 낮은 파수영역으로 이동하며, AES분석 결과에서 일반적인 oxide(Si:0=1:1.98)에서 보다 Si:O비가 1:1.23으로 낮아 PECVD산화 막내의 Si danling bond가 증가했음을 알 수 있었다.