In this study, we investigated the effect of annealing conditions on the ferromagnetic resonance(FMR) of yttrium iron garnet (Y3Fe5O12, YIG) thin film prepared on gadolinium gallium garnet (Gd3Ga5O12, GGG) substrate. The YIG thin films were grown by rf magnetron sputtering at room temperature and were annealed at various temperatures from 700 to 1000 ˚C. FMR characteristics of the YIG thin films were investigated with a coplanar waveguide FMR measurement system in a frequency range from 5 to 20 GHz. X-ray diffraction(XRD) and X-ray photoelectron spectroscopy(XPS) were used to characterize the phase formation, crystal structure and composition of the YIG thin films. Field dependent magnetization curves at room temperature were obtained by using a vibrating sample magnetometer(VSM). The FMR measurements revealed that the resonance magnetic field was highly dependent on the annealing condition: the lowest FMR linewidth can be observed for the 800 ˚C annealed sample, which agrees with the VSM results. We also found that the Fe and O composition changes during the annealing process play important roles in the observed magnetic properties.

Mono- and few-layer graphenes were grown on Ni thin films by rapid-thermal pulse chemical vapor deposition technique. In the growth steps, the exposure step for 60 s in H2 (a flow rate of 10 sccm (standard cubic centimeters per minute)) atmosphere after graphene growth was specially established to improve the quality of the graphenes. The graphene films grown by exposure alone without H2 showed an intensity ratio of IG/I2D = 0.47, compared with a value of 0.38 in the films grown by exposure in H2 ambient. The quality of the graphenes can be improved by exposure for 60 s in H2 ambient after the growth of the graphene films. The physical properties of the graphene films were investigated for the graphene films grown on various Ni film thicknesses and on 260-nm thick Ni films annealed at 500 and 700˚C. The graphene films grown on 260-nm thick Ni films at 900˚C showed the lowest IG/I2D ratio, resulting in the fewest layers. The graphene films grown on Ni films annealed at 700˚C for 2 h showed a decrease of the number of layers. The graphene films were dependent on the thickness and the grain size of the Ni films.

Multi shell graphite coated Ag nano particles with core/shell structure were successfully synthesized by pulsed wire evaporation (PWE) method. Ar and (10 vol.%) gases were mixed in chamber, which played a role of carrier gas and reaction gas, respectively. Graphite layers on the surface of silver nano particles were coated indiscretely. However, the graphite layers are detached, when the particles are heated up to in the air atmosphere. In contrast, the graphite coated layer was stable under Ar and atmosphere, though the core/shell structured particles were heated up to . The presence of graphite coated layer prevent agglomeration of nanoparticles during heat treatment. The dispersion stability of the carbon coated Ag nanoparticles was higher than those of pure Ag nanoparticles.

The effect of annealing treatment conditions on the interfacial adhesion energy between electrolessplated Ni film and polyimide substrate was evaluated using a 180˚ peel test. Measured peel strength values are 26.9±0.8, 22.4±0.8, 21.9±1.5, 23.1±1.3, 16.1±2.0 and 14.3±1.3g/mm for annealing treatment times during 0, 1, 3, 5, 10, and 20 hours, respectively, at 200˚C in ambient environment. XPS and AES analysis results on peeled surfaces clearly reveal that the peeling occurs cohesively inside polyimide. This implies a degradation of polyimide structure due to oxygen diffusion through interface between Ni and polyimide, which is also closely related to the decrease in the interfacial adhesion energy due to thermal treatment in ambient conditions.

1.5 μm-thick copper films deposited on silicon wafers were successfully bonded at 415˚C/25 kN for 40 minutes in a thermo-compression bonding method that did not involve a pre-cleaning or pre-annealing process. The original copper bonding interface disappeared and showed a homogeneous microstructure with few voids at the original bonding interface. Quantitative interfacial adhesion energies were greater than 10.4 J/m2 as measured via a four-point bending test. Post-bonding annealing at a temperature that was less than 300˚C had only a slight effect on the bonding energy, whereas an oxygen environment significantly deteriorated the bonding energy over 400˚C. This was most likely due to the fast growth of brittle interfacial oxides. Therefore, the annealing environment and temperature conditions greatly affect the interfacial bonding energy and reliability in Cu-Cu bonded wafer stacks.

Ti, Nb B를 합금원소로 첨가한 알루미늄 킬드 극저탄소 고강도 강판의 재결정 집합조직에 미치는 코일링처리시의 냉각속도, 냉간가공도, 연속어닐링처리등의 효과를 조사하였다. 집합조직계수비 TC(222)/TC(200)는 코일링시의 냉각속도 감소와 냉간압연시의 입하율 증가에 따라 증가하는 경향을 나타내었다. 그러나 압하율이 80%에서 90%로 증가됨에 따라 집합조직계수비가 오히려 감소하는 경향을 나타내는데, 이것은 주집합조직이 554<225>로부터 111<112>로부터 111<112>로 바뀌기 때문인것으로 보여진다. 집합조직계수비를 최대로 만들기위한 최적의 강판제조 공정 조건을 제시하면, 코일링처리시 노냉하고, 냉간압연시의 압하율은 80%로 하며, 연속열처리시 800˚C에서 1분간 유지한다음 20˚C로 수냉하고 다시 450˚C에 5분간 과시효처리하는 것이다.

The optimum annealing conditions of corn starch slurry were studied for RS4 type resistant starch production by phosphorylated cross-linking. When a corn starch slurry was cross-linked by using phosphate salts (STMP/STPP mixture) in the presence of 0.9%, 1.2% and 1.5% NaOH/st.ds, a high concentration of NaOH resulted in a rapid increase of the RS contents at the early reaction stage. However, similar RS contents were obtained after 12 h of cross-linking regardless of NaOH concentrations. The annealing treatment was conducted under various conditions such as pH between 2-10, temperature 40-60℃, time 0-14 h followed by phosphorylated cross-linking. The lower slurry pH was for the annealing treatment, the higher RS contents were obtained after cross-linking. When the slurry annealed for various period of time and temperature, a maximal amount of RS was formed after 2 h of annealing at 50℃ of annealing temperature of the starch slurry (pH 2.0). Therefore, an optimal annealing conditions at pH 2.0 and 50℃ for 2 h were proposed under the cross-linking conditions of sodium sulfate 10%/st.ds, NaOH1.2%/st.ds and 12 h of the reaction time. The RS contents were linearly increased with the increase of phosphate salt addition. The RS4 prepared under the optimal conditions contained RS 72.3% and its phosphorus content was 0.36%/st.ds, which was below the limit (0.4%/st.ds) of modified starch by Korea Food Additives Code.