Amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) with a coplanar structure were fabricated to investigate the feasibility of their potential application in large size organic light emitting diodes (OLEDs). Drain currents, used as functions of the gate voltages for the TFTs, showed the output currents had slight differences in the saturation region, just as the output currents of the etch stopper TFTs did. The maximum difference in the threshold voltages of the In-Ga-Zn-O (a-IGZO) TFTs was as small as approximately 0.57 V. After the application of a positive bias voltage stress for 50,000 s, the values of the threshold voltage of the coplanar structure TFTs were only slightly shifted, by 0.18 V, indicative of their stability. The coplanar structure TFTs were embedded in OLEDs and exhibited a maximum luminance as large as 500 nits, and their color gamut satisfied 99 % of the digital cinema initiatives, confirming their suitability for large size and high resolution OLEDs. Further, the image density of large-size OLEDs embedded with the coplanar structure TFTs was significantly enhanced compared with OLEDs embedded with conventional TFTs.

We report on the efficient detection of NO gas by an all-oxide semiconductor p-n heterojunction diode structure comprised of n-type zinc oxide (ZnO) nanorods embedded in p-type copper oxide (CuO) thin film. The CuO thin film/ZnO nanorod heterostructure was fabricated by directly sputtering CuO thin film onto a vertically aligned ZnO nanorod array synthesized via a hydrothemal method. The transport behavior and NO gas sensing properties of the fabricated CuO thin film/ ZnO nanorod heterostructure were charcterized and revealed that the oxide semiconductor heterojunction exhibited a definite rectifying diode-like behavior at various temperatures ranging from room temperature to 250 oC. The NO gas sensing experiment indicated that the CuO thin film/ZnO nanorod heterostructure had a good sensing performance for the efficient detection of NO gas in the range of 2-14 ppm under the conditions of an applied bias of 2 V and a comparatively low operating temperature of 150 oC. The NO gas sensing process in the CuO/ZnO p-n heterostructure is discussed in terms of the electronic band structure.

Silk fibroin can be damaged or degraded during degumming process. Therefore, it is expected that different structure and properties of silk fibroin can be obtained by different degumming method. However, effect of degumming method on the structure and properties of regenerated silk has not been considered, yet. In this study, Effect of degumming method on the structure and properties of solution, film, and electrospun fiber of regenerated silk was examined. Order of viscosity of regenerated silk solution as follows : Urea method > Acid method, HTHP method > Soap/soda method, Soda method. This viscosity difference among the degumming method strongly influenced the electro-spinning performance of regenerated silk perpared from different degumming method. Also, solution turbidity, crystallinity index (from FTIR), mechanical properties of silk were remarkably affected by degumming method.

본 연구에서는 아세틸화된 메틸 셀룰로스를 복합박막 정삼투막의 지지층으로 사용하였다. 계면중합법을 이용하여 선택성이 우수한 폴리아미드 활성층을 다양한 지지층 위에 코팅하였다. 아세틸화된 메틸 셀룰로스 지지층 위에 코팅된 복합 박막 정삼투막의 구조와 성능을 다른 지지층 위에 코팅된 복합박막 정삼투막과 비교하였다. 실험적 결과는 아세틸화된 메틸 셀룰로스 지지층 위에 코팅된 복합박막 정삼투막의 성능이 다른 정삼투막들에 비해서 우수하였으며 이것은 구조적인 특성과 염의 낮은 역확산속도 때문인 것으로 사료된다.

This study was conducted to investigate the influence of natural degrading polymer film covering in rice paddies on the benthic macroinvertebrate community structure in Dangsu-dong, Suwon, Gyeonggi-do from May 2009 to September 2009. We compared 5 treatments: golden apple snail farming (GF), natural degrading polymer film + organic farming (NOF), natural degrading polymer film + chemical farming (NCF), conventional farming (CF)，and no fertilization (NF) as the control. The total number of species was highest in NOF followed by GF, NF, NCF, and CF. The total number of individuals was highest in NOF followed by NCF, CF, NF, and GF. The Dominance index (DI) ranged from 0.43 to 0.95. The highest dominance index was in GF followed by NCF, NF-CF, and NOF. The species diversity index (H") for each experimental plot ranged from 0.49 to 2.93. The average species diversity index was highest in NOF followed by NF, GF, CF，and NCF. After the natural degrading polymer film covered the paddies, the benthic macroinvertebrates tended to recover, but leeches and aquatic beetles increased, Mollusca and Annelida, which are sensitive taxa, decreased in both species and individual numbers after the soil was covered with the natural degrading polymer film. The number of species tended to recover. However, the number of individuals continued to decrease.d, especially individuals. Since then, the number of species tended to recover. However, the number of individuals decreased.

The effect of silver nanoparticles (NPs) incorporation on the electronic properties of poly (3, 4-ethylenedioxythiphene) : poly(styrenesulfonate) (PEDOT : PSS) films was investigated. The surface of silver NPs was stabilized with trisodium citrate to control the size of silver NPs and prevent their aggregation. We obtained ca. 5 nm sized silver NPs and dispersed NPs in PEDOT : PSS solution. Sheet resistance, surface morphology, bonding state, and work function values of the PEDOT : PSS films were modified by silver NPs incorporation as well as annealing temperature. Sodium in silver NPs solution could lead to a decrease of work function of PEDOT : PSS; however, large content of silver NPs have an effect on the increase in work function, resulting from charge localization on the silver NPs and a decrease in the number of charge-trapping-related defects by chemical bond formation.

Si(111) 표면을 NH3분위기에서 실리콘질화물(SiNx)로 변형시킨 후 탄화규소(silicon carbide, SiC) 박막을 성장하였다. 질화시간이 증가함에 따라 SiC 박막 두께가 감소함을 관찰하였다. 또한 성장변수에 따라 SiC/Si 계면에서 결정결함인 틈새를 없앨 수 있었다. 100nm, 300nm, 500nm의 SiNx/Si 기판 위에 SiC 박막을 성장시켰다. 성장된 SiC 박막들은 모두 [111]면을 따라 성장되었고, SiC 결정들이 원주형 낟알로 성장되었다. SiC/SiNx 계면에서 void를 관찰할 수 없었다. 이러한 실험 결과는 SOI 구조의 산화규소를 SiNx로 대체함으로써 SiC 소자 제작에 응용될 수 있는 방향을 제시하고 있다.