We report the structural characterization and electric heating performance of carbon thin films (CTFs), which were prepared from negative-type SU-8 photoresist by deep UV exposure and following carbonization. The prepared CTFs were found to have pseudo-graphitic carbon structures containing partially graphite domains in the amorphous carbon matrix. The CTFs showed a very smooth surface morphology with a roughness of 0.42 nm. The 107 nm-thick CTFs exhibited an excellent electric heating performance by attaining a high maximal temperature of 207 °C and a rapid heating rate of 13.2 °C/s at an applied voltage of 30 V. Therefore, the CTFs prepared in this study can be applied as electrode materials for high-performance electric heaters.

본 연구에서는 비불소계 트리이소프로필 아민 아세테이트 (TAA) 화합믈을 사용하여 반도체 웨이퍼의 포토레지스트 패턴 건조 성능을 조사하였으며, 초임계이산화탄소 용 계면활성제로 잘 알려진 불소계 저분자량 화합물, PFPE-COOH 및 PFPE-COO-NH4 +과 비교하였다. 초임계 공정 후 얻어진 포토레지스트 패턴의 모양은 이산화탄소 압력, 온도, 시간 등 공정 처리 조건에 따라 달라졌으며, 최적의 조건에서 포토레지스트 패턴 붕괴가 거의 없는 결과를 얻을 수 있었다. TAA를 사용하는 초임계 세정은 PFPE-COOH에 비해 다소 떨어지지만 일반 습식 세정 방법보다는 우수한 패턴 형성 성능을 나타내었으며, 이것은 경제적이고 환경친화적인 새로운 계면활성제로서의 가능성을 보였다.

Epitaxial (1120) a-plane GaN films were grown on a (1102) R-plane sapphire substrate with photoresist (PR) masks using metal organic chemical vapor deposition (MOCVD). The PR mask with striped patterns was prepared using an ex-situ lithography process, whereas carbonization and heat treatment of the PR mask were carried out using an in-situ MOCVD. The heat treatment of the PR mask was continuously conducted in ambient H2/NH3 mixture gas at 1140℃ after carbonization by the pyrolysis in ambient H2 at 1100℃. As the time of the heat treatment progressed, the striped patterns of the carbonized PR mask shrank. The heat treatment of the carbonized PR mask facilitated epitaxial lateral overgrowth (ELO) of a-plane GaN films without carbon contamination on the R-plane sapphire substrate. Thhe surface morphology of a-plane GaN films was investigated by scanning electron microscopy and atomic force microscopy. The structural characteristics of a-plane GaN films on an R-plane sapphire substrate were evaluated by ω-2θ high-resolution X-ray diffraction. The a-plane GaN films were characterized by X-ray photoelectron spectroscopy (XPS) to determine carbon contamination from carbonized PR masks in the GaN film bulk. After Ar+ ion etching, XPS spectra indicated that carbon contamination exists only in the surface region. Finally, the heat treatment of carbonized PR masks was used to grow high-quality a-plane GaN films without carbon contamination. This approach showed the promising potential of the ELO process by using a PR mask.

Carbon micropatterns (CMs) were fabricated from a negative-type SU-8 photoresist by proton ion beam lithography and pyrolysis. Well-defined negative-type SU-8 micropatterns were formed by proton ion beam lithography at the optimized fluence of 1×1015 ions cm–2 and then pyrolyzed to form CMs. The crosslinked network structures formed by proton irradiation were converted to pseudo-graphitic structures by pyrolysis. The fabricated CMs showed a good electrical conductivity of 1.58×102 S cm–1 and a very low surface roughness.

PCB 제조에서 photoresist와 Copper Clad Laminate(CCL)의 구리표면과의 부착력을 항상시 키기 위하여 사용되는 soft etching제를 제조하기 위하여 과산화수소 사용을 배제하고, 유기산과 유기과 산화물을 이용하여 산의 종류, 농도, 에칭시간 등에 따른 구리표면의 에칭속도, 표면 조도, 및 오염도 등 을 조사하였다. 또한 에칭 후의 표면의 얼룩을 제거하기 위한 안정제의 최적 배합 및 농도도 확립하였 다. 본 연구 결과 유기산의 종류 중에서는 아세트산이 초기 구리 에칭속도가 가장 빨랐으며, 농도가 0.04 M이었을 때 0.4 μm/min이였다. 유기과산화물인 APS의 농도는 높을수록 에칭속도가 가장 빨랐으나, 표면 오염이 심각하였다. 안정제 용액의 조성도 표면 오염도에 큰 영향을 주었다. 결과적 0.04 M 아세 트산, 0.1M APS에 4 g/L의 안정제(ST-1)를 첨가한 에칭액의 경우 0.37 μm/min의 에칭속도와 표면 오염이 전혀 없으며, 표면 조도도 가장 우수하였다. 즉, CCL과 photoresist와 접착력을 향상시킬 수 있 을 것으로 판단된다.

이온 주입에 의하여 경화된 탄화층을 가지는 포토레지스트는 통상적인 습식 또는 건식 처리로는 제거하기가 매우 어렵다. 본 연구에서는 확산성과 물질전달특성이 우수한 초임계 이산화탄소와 공용매 및 첨가제를 사용하여 고이온 주입된 포토레지스트를 제거하는 방법을 연구하였다. 공용매의 종류 및 농도, 압력, 온도, 첨가제의 종류에 따른 제거특성을 연구하였으며, 제거 전 후의 웨이퍼 표면 상태 및 성분을 SEM, EDS를 사용하여 분석하였다. 산 혼합 공용매를 사용하여 4000psi, 70℃에서 2분간 처리 하였을 때, 포토레지스트는 100% 제거됨을 알 수 있었다.

Photoresist is defined as substance that makes chemical changes in its solubility, colouring and hardening by light energy. In this study, photosensitive photoresists of the positive type for a printing plate were studied. PF, o-, m-, p-CF resins as a matrix resin were synthesized at an identical condition. Photoresists were prepared by mixing NDS derivatives with a matrix resin at various mixing ratios. Characteristics of photoresists were studied by yield method of residual using solubility and Optical microscope was also analyzed. Prepared photoresist using NDS derivatives shows excellent photosensitivity and solubility compared with commercial product. The mixing ratio of 1:4(by mass) of NDS derivative[III] and m-CF resin shows the highest dissoultion rate among others. In addition, photoresist was obtained at this condition resulted in the superior sensitivity and contrast.

Naphthoquinone-1,2-diazide-5-sulfonyl [NDS]derivatives members of Quinone diazide compound that are utilizable as photoresist for printing plate were synthesized, and photoresist were prepared by mixing these derivatives with a matrix resin(PF, CF) at various weight ratios. Photosensitive characteristics of photoresist were studied by Gray scale method, and SEM to analyze if they can be used as photosensitive material in a printing plate. Experimental results showed using IR, UV, NDS derivatives were photoconverted and developer-soluble photoresist were produced. Photoresist in the mixing ratio of 1:4 of NDS[II] and CF resin gave rise to the highest dissolution rate. In addition, photoresist obtained at this condition resulted in the most superior sensitivity.

Cinnamoyl ester(PGEFC) of poly(phloroglucinol-formaldehyde) glycidyl ether which has photosensitive functional group was prepared to apply to photoresist. Photosensitivity of PGEFC was estimated by the solubility difference in organic solvent before and after exposure to light. The yield of residual film was calculated by immersing the sample-coated quartz plates in the solvent which was used in coating. The yield of the residual film which was closely related to the sensitivity of the film, was affected by the degree of polymerization of the backbone resin, sensitizers and their concentration. The sensitivity was depended upon the degree of polymerization. Most of effective sensitizer for PGEFC among the sensitizers was 2, 6-dichloro-4-nitroaniline.

For the reclamation of HEP (1-hydroxyethylpiperazine) and MDG (methyl diglycol) from waste photoresist stripper, lab-scale experiments with a packed bed vacuum column were carried out. Purity of recovered solution mixture of HEP and MDG was measured to be 99.3% and recovery yield was to be 65%. Those results confirm that some organic solvents reclaimed from waste PR stripper satisfies the product specification required for the formulation of photoresist stripper.