TiN and CrN thin films are among the most used coatings in machine and tool steels. TiN and CrN are deposited by arc ion plating(AIP) method. The AIP method inhibits the reaction by depositing a hard, protective coating on the material surface. In this study, the characteristics of multi-layer(TiN/CrN/TiN(TCT), CrN/TiN/CrN(CTC)) are investigated. For comparison, TiN with the same thickness as the multilayer is formed as a single layer and analyzed. Thin films formed as multilayers are well stacked. The characteristics of micro hardness and corrosion resistance are better than those of single layer TiN. The TiN/CrN peak is confirmed because both TCT and CTC are formed of the same component(TiN, CrN), and the phase is first grown in the (111) direction, which is the growth direction. However, the adhesion and abrasion resistance of the multilayer films are somewhat lower.

본 연구는 ‘제조업 생산직 여성들의 생존권 투쟁’을 주제로 1980년대 한국의 민중미술운동의 영향을 받으며 ‘노동자로서의 여성’이라는 측면을 여성의 시각에서 스스로 표현하고자 한 한국의 여성주의 미술운동의 시발점에 주목하였다. 같은 맥락에서 1990년대 이후 노동자로서의 여성의 노동활동을 다룬 영상작품들이 계속하여 한국여성영상작가에 의해 발표되고 있는데, 이는 1980년대 산업체의 여성 노동운동을 뿌리를 두고 전개되기 시작한 한국의 여성주의 문화운동의 한 특징이다. 이것은 제2차 세계대전 이후 독립 국가들이 겪었던 경제성장과 민주화의 정착이라는 근대화의 역사를 배경으로 한국 사회의 경제성장구조에서 자신의 ‘노동’의 가치를 인정받고자 한 여성들의 주체의식에서 비롯되며 서구권의 여성주의 문화운동과는 그 역사적 차이점을 갖는다.

Among the fuel cell electrolyte candidates in the intermediate temperature range, glass materials show stable physical properties and are also expected to have higher ion conductivity than crystalline materials. In particular, phosphate glass has a high mobility of protons since such a structure maintains a hydrogen bond network that leads to high proton conductivity. Recently, defects like volatilization of phosphorus and destruction of the bonding structure have remarkably improved with introduction of cations, such as Zr4+ and Nb5+, into phosphate. In particular, niobium has proton conductivity on the surface because of higher surface acidity. It can also retain phosphorus content during heat treatment and improve chemical stability by bonding with phosphorus. In this study, we fabricate niobium phosphate glass thin films through sol-gel processing, and we report the chemical stability and electrical properties. The existence of the hydroxyl group in the phosphate is confirmed and found to be preserved at the intermediate temperature region of 150-450 oC.

Edible biopolymer films were developed from the exopolysaccharides (EPS) extracted from Weissella confusa 113-2. The optimum composition for film formation was determined using the response surface analysis with the explanatory variables of the EPS (0.5-5.5%) and glycerol (0.5-5.5%) concentrations and the response variable of film elastic modulus (EM). The mass ratio of distilled water to solids was set constant (14:1). Tensile strength (TS), percentage elongation at break (%E), EM, water vapor permeability (WVP) of EPS films were evaluated. The glass transition temperatures of the films were also determined by a dynamic mechanical analysis. The optimum mass ratio of EPS to glycerol was 0.754:0.375. The WVP, TS, %E, and EM of the film under the optimal composition were 3.53±0.21 g·mm/kPa·h·m2, 7.03±0.49 MPa, 84.82±12.31%, and 62.03±6.93 MPa, respectively. The glass transition temperature varied from 54 to 83 °C. The EPS film has the potential to be applied to food products as an edible film with physical and barrier properties comparable to other biopolymer edible films.

A protein-lipid film formed on the surface of soymilk by heating can be applied in various areas such as edible package film, cosmetic sheet, and meat analog. In this study, a colloid formulation of isolated soy protein (ISP) and soybean oil (4:1) was used to make protein-lipid films and it compared with the product using soymilk (Glycine max L. Merrill) for making a meat analog of fibrous shape. The colloid with 2.3 cm depth in a pan at 85︒C produced 8 sheets of protein-lipid films. The films were collected from the pan as a bundle to make a fibrous shape. Color parameters and texture profile analysis (TPA) were measured depending on the order of the film formation. Color parameters (Hunter-values) of the films using ISP and oil notably decreased the lightness and increased the redness as the order of the films. And changes of color differences in the films using ISP and oil were larger than those in the films using soymilk. TPA Parameters of the film such as hardness, resilience, springiness, cohesiveness, and gumminess were increased as increasing the order of the films formation. In the films using ISP and oil, lipid concentration was the highest in the first formed film rather than other films. However, in the films using soymilk, lipid concentration was similar among the order of the films. Consequently, the films using ISP and oil were produced non-uniformity of color, texture, and lipid composition in the order of the film formation compared with the films using soymilk. Combination of the soy protein-lipid films as a bundle could be used as a meat analog which had non-uniformity and fibrous shape.

TaNx film is grown by plasma enhanced atomic layer deposition (PEALD) using t-butylimido tris(dimethylamido) tantalum as a metalorganic source with various reactive gas species, such as N2+H2 mixed gas, NH3, and H2. Although the pulse sequence and duration are the same, aspects of the film growth rate, microstructure, crystallinity, and electrical resistivity are quite different according to the reactive gas. Crystallized and relatively conductive film with a higher growth rate is acquired using NH3 as a reactive gas while amorphous and resistive film with a lower growth rate is achieved using N2+H2 mixed gas. To examine the relationship between the chemical properties and resistivity of the film, X-ray photoelectron spectroscopy (XPS) is conducted on the ALD-grown TaNx film with N2+H2 mixed gas, NH3, and H2. For a comparison, reactive sputter-grown TaNx film with N2 is also studied. The results reveal that ALD-grown TaNx films with NH3 and H2 include a metallic Ta-N bond, which results in the film’s higher conductivity. Meanwhile, ALD-grown TaNx film with a N2+H2 mixed gas or sputtergrown TaNx film with N2 gas mainly contains a semiconducting Ta3N5 bond. Such a different portion of Ta-N and Ta3N5 bond determins the resistivity of the film. Reaction mechanisms are considered by means of the chemistry of the Ta precursor and reactive gas species.

In order to increase the efficiency of the sputtering method widely used in thin film fabrication, a dc sputtering apparatus which supplies both high frequency and magnetic field from the outside was fabricated, and cobalt thin film was fabricated using this apparatus. The apparatus can independently control the applied voltage, the target-substrate distance, and the target current, which are important parameters in the sputtering method, so that a stable glow discharge is obtained even at a low gas pressure of 10−3 Torr. The fabrication conditions using the sputtering method were mainly performed in Ar+O2 mixed gas containing about 0.6% oxygen gas under various Ar gas pressures of 1 to 30 mTorr. The microstructure of Co thin films deposited using this apparatus was examined by electron diffraction pattern and X-ray techniques. The magnetic properties were investigated by measuring the magnetization curves. The microstructure and magnetic properties of Co thin films depend on the discharge gas pressure. The thin film fabricated at high gas pressure showed a columnar structure containing a large amount of the third phase in the boundary region and the thin film formed at low gas pressure showed little or no columnar structure. The coercivity in the plane was slightly larger than that in the latter case.

In order to explore the similarities and differences among the "Petty bourgeois" factors in the various periods of Chinese film, this paper traces the evolution of the "Petty bourgeois" factors in the context of the Mao era, the Deng era, and the globalization era, respectively. First of all, under the Guidance of "Literature and Art Serving the Workers, Peasants and Soldiers" in the Mao era, film became a tool for propagating the ideology of class struggle. Elements of petty bourgeoisie literature such as "Individualism, Critical Realism, Sentimentalism" were abandoned and obscured in the film. The urban petty bourgeoisie was the main cinema audiences at the time, but it was not the subject of film creation. Second, in the era of Deng, as the reform of the social commodity economy, the traumatic literature film with the characteristics of "Individualism and Sentimentalism" was popular with the public. "Petty bourgeois" elements of literature and art abandoned by the Mao era began to return to the stage of history. Especially in the late 1980s, the "Wang Shuo Literature" movie, which depicts a special youth class in modern Chinese society, opened the prelude to the "new" Petty bourgeois era. Finally, with the return of Hollywood films to the Chinese market in 1995, Chinese films entered the era of globalization. Hollywood films produced a large amount of "new" petty bourgeois with the aesthetic taste of "Western middle class." With the rise of "new" petty bourgeois, films which expressed romance, rebellion, sentimental, comedy have become part of China’s diversified film market. Students and urban youth with “new” petty bourgeois character became the subject of the “new” petty-bourgeois films. The main body of Chinese film creation has taken a step closer to the image of a multi-faceted public image.

Li-incorporated ZnO thin films were deposited by using ultrasonic-assisted spray pyrolysis deposition (SPD) system. To investigate the effect of Li-incorporation on the performance of ZnO thin films, the structural, electrical, and optical properites of the ZnO thin films were analyzed by means of X-ray diffraction (XRD), field-emssion scanning electron microscopy (FE-SEM), Hall effect measurement, and UV-Vis spectrophotometry with variation of the Li concentraion in the ZnO sources. Without incorporation of Li element, the ZnO surface showed large spiral domains. As the Li content increases, the size of spiral domains decreased gradually, and finally formed mixed small grain and one-dimensional nanorod-like structures on the surface. This morphological evolution was explained based on an anti-surfactant effect of Li atoms on the ZnO growth surface. In addition, the Li-incorporation changed the optical and electrical properties of the ZnO thin films by modifying the crystalline defect structures by doping effects.

Sb-doped SnO2 (ATO) transparent conducting films are fabricated using horizontal ultrasonic spray pyrolysis deposition (HUSPD) to form uniform and compact film structures with homogeneously supplied precursor solution. To optimize the molar concentration and transparent conducting performance of the ATO films using HUSPD, we use precursor solutions of 0.15, 0.20, 0.25, and 0.30 M. As the molar concentration increases, the resultant ATO films exhibit more compact surface structures because of the larger crystallite sizes and higher ATO crystallinity because of the greater thickness from the accelerated growth of ATO. Thus, the ATO films prepared at 0.25 M have the best transparent conducting performance (12.60±0.21 Ω/□ sheet resistance and 80.83% optical transmittance) and the highest figure-of-merit value (9.44±0.17 × 10-3 Ω-1). The improvement in transparent conducting performance is attributed to the enhanced carrier concentration by the improved ATO crystallinity and Hall mobility with the compact surface structure and preferred (211) orientation, ascribed to the accelerated growth of ATO at the optimized molar concentration. Therefore, ATO films fabricated using HUSPD are transparent conducting film candidates for optoelectronic devices.

In this study, we synthesize tungsten oxide thin films by electrodeposition and characterize their electrochromic properties. Depending on the deposition modes, compact and porous tungsten oxide films are fabricated on a transparent indium tin oxide (ITO) substrate. The morphology and crystal structure of the electrodeposited tungsten oxide thin films are investigated by scanning electron microscopy (SEM) and X-ray diffraction (XRD). X-ray photoelectron spectroscopy is employed to verify the chemical composition and the oxidation state of the films. Compared to the compact tungsten oxides, the porous films show superior electrochemical activities with higher reversibility during electrochemical reactions. Furthermore, they exhibit very high color contrast (97.0%) and switching speed (3.1 and 3.2 s). The outstanding electrochromic performances of the porous tungsten oxide thin films are mainly attributed to the porous structure, which facilitates ion intercalation/deintercalation during electrochemical reactions.

1990년대 중국의 개혁개방과 더불어 국영기업의 민영화가 가져온 下崗, 사회 배급시스템의 중지, 도농간의 빈부격차 등의 부작용은 수많은 하위계층을 양산해내면서, 그들을 사회의 주변으로 내몰고 압박하였다. 그리고 지배이데올로기의 부작용에 노출된 하위계층의 삶과 일상을 재현하는 영화들이 등장하면서 중국 사회의 구조가 안고 있는 모순과 문제점을 포착하였다. 그리고 지배이데올로기의 순기능을 확산하는 영화도 나타나기 시작하였다. 본 연구는 이러한 구도를 저항과 순응의 측면에서 파악하고 있다. <안양의 고아>, <인재경도>, <삼협호 인> 등의 영화를 중심으로 저항과 순응의 관점을 제시하고자 한다.

ZnMgBeGaO/Ag/ZnMgBeGaO multilayer structures were sputter grown and characterized in detail. Results indicated that the electrical properties of the ZnMgBeGaO films were significantly improved by inserting an Ag layer with proper thickness (~ 10 nm). Structures with thicker Ag films showed much lower optical transmission, although the electrical conductivity was further improved. It was also observed that the electrical properties of the multilayer structure were sizably improved by annealing in vacuum (~35% at 300 oC). The optimum ZnMgBeGaO(20nm)/Ag(10nm)/ZnMgBeGaO(20nm) structure exhibited an electrical resistivity of ~2.6 × 10−5 Ωcm (after annealing), energy bandgap of ~3.75 eV, and optical transmittance of 65%~ 95 % over the visible wavelength range, representing a significant improvement in characteristics versus previously reported transparent conductive materials.

A metal mesh TCE film is fabricated using a series of processes such as UV imprinting of a transparent trench pattern (with a width of 2-5 μm) onto a PET film, filling it with silver paste, wiping of the surface, and heatcuring the silver paste. In this work nanosized (40-50 nm) silver particles are synthesized and mixed with submicron (250-300 nm)-sized silver particles to prepare silver paste for the fabrication of metal mesh-type TCE films. The filling of these silver pastes into the patterned trench layer is examined using a specially designed filling machine and the rheological testing of the silver pastes. The wiping of the trench layer surface to remove any residual silver paste or particles is tested with various mixture solvents, and ethyl cellosolve acetate (ECA):DI water = 90:10 wt% is found to give the best result. The silver paste with 40-50 nm Ag:250-300 nm Ag in a 10:90 wt% mixture gives the highest electrical conductance. The metal mesh TCE film obtained with this silver paste in an optimized process exhibits a light transmittance of 90.4% and haze at 1.2%, which is suitable for TSP application.

We report facile solution processing of mesoporous hematite (α-Fe2O3) thin films for high efficiency solar-driven water splitting. Fe2O3 thin films were prepared on fluorine doped tin oxide(FTO) conducting substrates by spin coating of a precursor solution followed by annealing at 550 oC for 30 min. in air ambient. Specifically, the precursor solution was prepared by dissolving non-toxic FeCl3 as an Fe source in highly versatile dimethyl sulfoxide(DMSO) as a solvent. The as-deposited and annealed thin films were characterized for their morphological, structural and optical properties using field-emission scanning electron microscopy(FE-SEM), X-ray diffraction(XRD), X-ray photoelectron spectroscopy(XPS) and UV-Vis absorption spectroscopy. The photoelectrochemical performance of the precursor (α-FeOOH) and annealed (α-Fe2O3) films were characterized and it was found that the α-Fe2O3 film exhibited an increased photocurrent density of ~0.78 mA/cm2 at 1.23 V vs. RHE, which is about 3.4 times higher than that of the α-FeOOH films (0.23 mA/cm2 at 1.23 V vs. RHE). The improved performance can be attributed to the improved crystallinity and porosity of α-Fe2O3 thin films after annealing treatment at higher temperatures. Detailed electrical characterization was further carried out to elucidate the enhanced PEC performance of α-Fe2O3 thin films.

Self-cleaning and photocatalytic TiO2 thin films were prepared by a facile sol-gel method followed by spin coating using peroxo titanic acid as a precursor. The as-prepared thin films were heated at low temperature(110 °C) and high temperature (400 °C). Thin films were characterized by X-ray diffraction(XRD), Field-emission scanning electron microscopy(FESEM), UVVisible spectroscopy and water contact angle measurement. XRD analysis confirms the low crystallinity of thin films prepared at low temperature, while crystalline anatase phase was found the for high temperature thin film. The photocatalytic activity of thin films was studied by the photocatalytic degradation of methylene blue dye solution. Self-cleaning and photocatalytic performance of both low and high temperature thin films were compared.

We investigated the effect of ZnO buffer layer on the formation of ZnO thin film by ultrasonic assisted spray pyrolysis deposition. ZnO buffer layer was formed by wet solution method, which was repeated several times. Structural and optical properties of the ZnO thin films deposited on the ZnO buffer layers with various cycles and at various temperatures were investigated by field-emission scanning electron microscopy, X-ray diffraction, and photoluminescence spectrum analysis. The structural investigations showed that three-dimensional island shaped ZnO was formed on the bare Si substrate without buffer layers, while two-dimensional ZnO thin film was deposited on the ZnO buffer layers. In addition, structural and optical investigations showed that the crystalline quality of ZnO thin film was improved by introducing the buffer layers. This improvement was attributed to the modulation of the surface energy of the Si surface by the ZnO buffer layer, which finally resulted in a modification of the growth mode from three to two-dimensional.

목적: ITO 박막과 발수 박막의 두께에 따른 안경렌즈 투과율 변화를 관찰하고자 한다. 방법: Electron beam evaporation 와 dipping장비로 ITO 코팅, 발수 코팅, SiO2, ZrO2, 하드 코팅 막 을 제작하고 분광광도계와 ellipsomter를 이용하여 파장에 따른 광학상수를 구했다. 이러한 데이터를 이용 하여 Macleod 프로그램으로 ITO 박막과 발수 박막의 두께에 따른 안경렌즈 투과율의 변화를 관찰하였다. 박막설계는 [air / repellent film / ITO / SiO2-ZrO2-SiO2-ZrO2 / AR coating / hard coating(1.553) / lens(1.56)] 와 같다. 결과: ITO 박막과 발수 박막이 없을 시 최적 투과율은 400nm에서 700nm 까지의 평균 투과율은 약 99.5%이다. 안경렌즈 전 후면에서의 반사율이 비슷하므로 안경렌즈 전체 투과율은 약 99%이다. 발수 박막 의 두께를 고정시키고 ITO 박막의 두께를 증가시키면 가시광선의 단파장 영역의 투과율이 장파장에 비해 많 이 감소된다. ITO 박막을 고정시키고 발수 박막의 두께를 증가시킬 경우 장파장의 투과율이 감소하고 단파 장의 투과율은 발수 박막의 두께가 50nm 까지 감소하다가 그 이후에서는 투과율이 증가한다. 결론: ITO 박막의 두께를 증가시키면 가시광선의 단파장 영역의 투과율이 장파장에 비해 많이 떨어지고, 발수 박막의 두께를 증가시킬 경우 장파장의 투과율이 감소하고 단파장의 투과율은 발수 박막의 두께가 50nm 까지 감소하다가 그 이후에서는 투과율이 증가한다.

지방산 혼합물 단분자층 LB막의 전기화학적 특성을 통하여 그 안정성을 순환전압전류법으로 조사하였다. 지방산혼합물 LB막은 ITO glass에 LB법을 사용하여 제막하였다. 전기화학적 특성은 0.01N KClO4 용액에서 3 전극 시스템으로 순환전압전류법에 의해 측정하였다. 측정범위는 연속적으로 1650 mV로 산화시키고, 초기 전위인 -1350 mV로 환원시켰다. 주사속도는 각각 50, 100, 150, 200 및 250 mV/s로 설정하였다. 그 결과 지방산혼합물 LB막은 순환전압전류곡선으로부터 산화전류로 인한 비가역 공정으로 나타났다. 지방산혼합물 LB막은 전해질농도가 0.01 N NaClO4 용액에서 확산계수(D)는 각각 7.9×10-2 cm2s-1을 얻었다.

Aluminum-oxide(Al2O3) thin films were deposited by electron cyclotron resonance plasma-enhanced atomic layer deposition at room temperature using trimethylaluminum(TMA) as the Al source and O2 plasma as the oxidant. In order to compare our results with those obtained using the conventional thermal ALD method, Al2O3 films were also deposited with TMA and H2O as reactants at 280 oC. The chemical composition and microstructure of the as-deposited Al2O3 films were characterized by X-ray diffraction(XRD), X-ray photo-electric spectroscopy(XPS), atomic force microscopy(AFM) and transmission electron microscopy(TEM). Optical properties of the Al2O3 films were characterized using UV-vis and ellipsometry measurements. Electrical properties were characterized by capacitance-frequency and current-voltage measurements. Using the ECR method, a growth rate of 0.18 nm/cycle was achieved, which is much higher than the growth rate of 0.14 nm/cycle obtained using thermal ALD. Excellent dielectric and insulating properties were demonstrated for both Al2O3 films.