Homogeneous liquid crystal (LC) alignment on hafnium strontium oxide (HfSrO) films prepared by sol-gel process via ion-beam (IB) bombardment was investigated. Uniform LC alignment was achieved on the IB-irradiated HfSrO films at IB intensity of 1.8 keV. We confirmed the effect of surface morphology on LC alignment using field-emission scanning electron microscope (FE-SEM). In addition, we observed electro-optical characteristics of the twisted-nematic (TN)-LC cells based on HfSrO films to verify the possibility of LC display (LCD) application.

Dy3+ and Eu3+-codoped SrWO4 phosphor thin films were deposited on sapphire substrates by radio frequency magnetron sputtering by changing the growth and thermal annealing temperatures. The results show that the structural and optical properties of the phosphor thin films depended on the growth and thermal annealing temperatures. All the phosphor thin films, irrespective of the growth or the thermal annealing temperatures, exhibited tetragonal structures with a dominant (112) diffraction peak. The thin films deposited at a growth temperature of 100 oC and a thermal annealing temperature of 650 oC showed average transmittances of 87.5% and 88.4% in the wavelength range of 500-1100 nm and band gap energy values of 4.00 and 4.20 eV, respectively. The excitation spectra of the phosphor thin films showed a broad charge transfer band that peaked at 234 nm, which is in the range of 200-270 nm. The emission spectra under ultraviolet excitation at 234 nm showed an intense emission peak at 572 nm and several weaker bands at 479, 612, 660, and 758 nm. These results suggest that the SrWO4: Dy3+, Eu3+ thin films can be used as white light emitting materials suitable for applications in display and solid-state lighting.

이글은 최근까지 세계적으로 주목 받고 있는 타이완의 영화감독 허우샤오시엔의 영화에 대한 새로운 해석이다. 그중에서도 1989년 작품 《비정성시(悲情城市:A City of Sadness : 1989)》 를 재조명하는 것이다. 그리고 지금의 시점에서 그의 영화를 다시 보면서 작품 속에서 그의 영화 가 갖고 있는 특성과 그 영화들이 가지는 시대적 배경의 모습, 그러한 것들과 인간적 환경에 대 하여 주목한다. 이는 그가 말했듯이 영화를 만드는 일은 결국 역사와 사람을 알아가는 과정일 것이다. 그는 인간의 삶이 의지적인 것과 결코 의지적이지 않은 반대의 면이 있다는 것을 표현하 고자 했다. 특히 인간이 가지는 원초적 진실함이 어떻게 넓은 중국 속에서, 타이완이라는 중국의 한 부분 지역에서, 그리고도 극히 일부분에 불과한 지역에서 겪는 상황에 대해서, 그리고 시대의 변화가 많은 변곡점과 마주치면서 겪는 인간의 한계를 영화의 매개체를 통하여 특히, 그가 만든 스크린을 통하여 어떻게 비추어내는가 하는 것을 보여주고 있다. 그의 영화가 유명하거나 많은 상을 받아서가 아니라 그가 감독하였거나 제작한 영화들은 시대가 바뀌어도 항상 재조명되고 관 객들로 하여금 다시 감상되어야 할 필요가 크므로 우리는 그의 작품에 대해서 특히 그의 8년만의 역작이며, 아름답지만 슬픈 《悲情城市》를 다른 작품과 더불어 재조명 하고자 한다.

Forecasting of box office performance after a film release is very important, from the viewpoint of increase profitability by reducing the production cost and the marketing cost. Analysis of psychological factors such as word-of-mouth and expert assessment is essential, but hard to perform due to the difficulties of data collection. Information technology such as web crawling and text mining can help to overcome this situation. For effective text mining, categorization of objects is required. In this perspective, the objective of this study is to provide a framework for classifying films according to their characteristics. Data including psychological factors are collected from Web sites using the web crawling. A clustering analysis is conducted to classify films and a series of one-way ANOVA analysis are conducted to statistically verify the differences of characteristics among groups. The result of the cluster analysis based on the review and revenues shows that the films can be categorized into four distinct groups and the differences of characteristics are statistically significant. The first group is high sales of the box office and the number of clicks on reviews is higher than other groups. The characteristic of the second group is similar with the 1st group, while the length of review is longer and the box office sales are not good. The third group's audiences prefer to documentaries and animations and the number of comments and interests are significantly lower than other groups. The last group prefer to criminal, thriller and suspense genre. Correspondence analysis is also conducted to match the groups and intrinsic characteristics of films such as genre, movie rating and nation.

Aluminum oxide (Al2O3) thin films were grown by atomic layer deposition (ALD) using a new Al metalorganic precursor, dimethyl aluminum sec-butoxide (C12H30Al2O2), and water vapor (H2O) as the reactant at deposition temperatures ranging from 150 to 300 oC. The ALD process showed typical self-limited film growth with precursor and reactant pulsing time at 250 oC; the growth rate was 0.095 nm/cycle, with no incubation cycle. This is relatively lower and more controllable than the growth rate in the typical ALD-Al2O3 process, which uses trimethyl aluminum (TMA) and shows a growth rate of 0.11 nm/ cycle. The as-deposited ALD-Al2O3 film was amorphous; X-ray diffraction and transmission electron microscopy confirmed that its amorphous state was maintained even after annealing at 1000 oC. The refractive index of the ALD-Al2O3 films ranged from 1.45 to 1.67; these values were dependent on the deposition temperature. X-ray photoelectron spectroscopy showed that the ALD-Al2O3 films deposited at 250oC were stoichiometric, with no carbon impurity. The step coverage of the ALD-Al2O3 film was perfect, at approximately 100%, at the dual trench structure, with an aspect ratio of approximately 6.3 (top opening size of 40 nm). With capacitance-voltage measurements of the Al/ALD-Al2O3/p-Si structure, the dielectric constant of the ALDAl2O3 films deposited at 250 oC was determined to be ~8.1, with a leakage current density on the order of 10−8 A/cm2 at 1 V.

A multi-step deposition process for the gap-filling of submicrometer trenches using dimethyldimethoxysilane (DMDMOS), (CH3)2Si(OCH3)2, and CxHyOz by plasma enhanced chemical vapor deposition (PECVD) is presented. The multistep process consisted of pre-treatment, deposition, and post-treatment in each deposition step. We obtained low-k films with superior gap-filling properties on the trench patterns without voids or delamination. The newly developed technique for the gapfilling of submicrometer features will have a great impact on inter metal dielectric (IMD) and shallow trench isolation (STI) processes for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universally for other chemical vapor deposition systems.

We improve the energy conversion efficiency (ECE) of a dye sensitized solar cell (DSSC) by preparing a working electrode (WE) with localized surface plasmon resonance (LSPR) by inducing Au thin films with thickness of 0.0 to 5.0 nm, deposited via sputtering. Field emission scanning electron microscopy and atomic force microscopy were used to characterize the microstructure of the blocking layer (BL) of the Au thin films. Micro-Raman measurement was employed to confirm the LSPR effect, and a solar simulator and potentiostat were used to evaluate the photovoltaic properties, including the impedance and the I-V of the DSSC of the Au thin films. The results of the microstructural analysis confirmed that nano-sized Au agglomerates were present at certain thicknesses. The photovoltaic results show that the ECE reached a value of 5.34% with a 1-nm thick-Au thin film compared to the value of 5.15 % without the Au thin film. This improvement was a result of the increase in the LSPR of the TiO2 layer that resulted from the Au thin film coating. Our results imply that the ECE of a DSSC may be improved by coating with a proper thickness of Au thin film on the BL.

The reduction in solar radiation transmittance(SRT) because of dust and other foreign materials was experimentally tested in two types of greenhouses with the intent to obtain basic data for establishing maintenance and management guidelines for greenhouse cover materials. The test results in the greenhouse in Gyehwa-do estimated the amount of removed dust at 16.8– 1,021.6 mg·m-2(average: 520.7 mg·m-2), and the dust amount varied widely with the measurement points. The SRT measured in triplicate before and after dust removal ranged 68.5–80.9% and 80.9–87.2%, respectively; thus, there was an improvement in SRT by about 8.1% after dusting. In contrast, the greenhouse in Gyeongsang National University did not exhibit great fluctuations in the coefficient of determination(correlation coefficient) regardless of the daily total, average, or maximum horizontal surface radiation; the SRT gradually decreased over time. The SRT increased or decreased, showing clearly different patterns in summer and winter half years, as did the coefficients of determination(0.468–0.828). Dust was measured to be in the range 747.1– 983.1 mg·m-2(average: 840.1 mg·m-2), without great differences between the measurement points, unlike in the case of the greenhouse in Gyehwa-do. The SRT measured before and after the dust removal ranged 73.0–80.5% and 81.0–88.6%, respectively, showing an average improvement of about 7.9%. The SRT measured after washing with water ranged 88.7–90.6%, demonstrating a greater improvement with an average increase rate of 13.0%, which is 5.1% higher than the increase rate after dust removal. These results suggest that although washing with water rather than dust removal improves SRT to a greater extent(13.0% vs. 7.9%), dust removal alone is considered to provide considerable improvement in SRT. Comparison of the images of the unused film and pre-dusting film under the microscope revealed that foreign materials such as dust were adhered to the pre-dusting film, and variations were observed according to the magnification ratio and photographed area.

We developed an Al sputtering process by varying the plasma power, process temperature, and film thickness. We observed an increase of hillock distribution and average diameter with increasing plasma power, process temperature, and film thickness. Since the roughness of a film increases with the increase of the distribution and average size of hillocks, the control of hillock formation is a key factor in the reduction of Al corrosion. We observed the lowest hillock formation at 30 W and 100 oC. This growth characteristic of sputtered Al thin films will be useful for the reduction of Al corrosion in the future of the electronic packaging field.

In this study, TbDyFe thin films with the thickness of 1000 Å are fabricated by DC magnetron sputtering. TbDyFe thin films are prepared by DC magnetron sputtering method. The pressure of Ar gas below 1.33 kPa and DC input power of 200 W are used for the sputtering conditions. During sputtering process the substrate holder is heated up to 150 ℃. The thin films are deposited to a thickness of 1000 Å on polyimide substrate with a thickness of 2 μm. The fabricated microstructures are observed by X-ray diffraction (XRD) and the film thickness is measured. Magnetostrictions are determined from the curvature of the thin films which are measured by the optical cantilever method. The experimental results are discussed with numerical data.

본 연구의 목적은 광전환재의 사이즈가 다른 광전환 필름을 피복한 온실에서, 실내 생육 환경, 토마토 및 상추의 생육과 품질을 분석하는 것이다. 10μm 이상의 광 전환재를 이용한 광전환 필름(Micro 필름), 500nm 이하의 광전환재를 이용한 광전환 필름(Nano 필름)과 폴리에틸렌(PE) 필름을 2중 온실의 외피복재로 피복하였다. 내피복재는 0.06mm PE 필름을 사용하였고, 내피복 재 및 외피복재의 두께는 모두 0.06mm로 동일하였다. 광전환 필름의 인장강도, 인열강도, 신장율은 PE 필름과 유사하였다. 투광률은 Nano 필름이 600-750nm 및 전체 투광률에서 PE 필름보다 높았으며, Micro 필름은 PE 필름보다 전체 투광률이 낮았다. 온실 내 기온은 Micro 및 Nano 필름 온실이 PE 필름 온실에 비하여 약 2oC정도 높았고, 광전환 필름 온실 간의 유의적인 차이는 없었다. 지온은 Nano 필름 온실이 Micro 필름과 PE 온실에 비하여 각각 1.5, 3 정도 높았다. 토마토의 수량은 PE 필름 온실에 비해 Micro 및 Nano 필름 온실에서 각각 12%, 14% 정도 유의적으로 증가하였고, 당도 차이는 없었다. 그리고 광전환 필름 간의 유의적인 차이는 없었다. 상추의 수량은 Micro 필름 온실이 Nano 필름 및 PE 필름 온실에 비하여 각각 27%, 59% 높았다. Hunter의 적색 값a는 Nano 필름 온실에서 가장 높았다. 토마토와 같이 높은 광을 요구하는 작물은 투광률이 좋은 Nano 필름이 적합하였고, 상추와 같이 낮은 광을 요구하는 작물은 상추는 Micro 필름이 적합하다고 판단되었다.

본 연구에서는 Tg가 서로 다른 폴리에스테르 바인더로 실버 페이스트를 제조하여 점도 및 점탄성를 측정하였다. 그리고 제조된 실버 페이스트를 스크린인쇄법으로 전극을 인쇄하여 folding 및 stretching test에 따른 전도성 변화 및 전극패턴의 표면형상 변화에 대해서 연구하였다. 그 결과 folding test에서는 Tg가 낮고, 높고와는 관계없이 folding횟수의 증가에 따라서 저항치가 선형적으로 증가됨을 알 수 있었다. 그러나 stretching test결과에서는 Tg에 따른 명확한 특성차이가 나타났다. 즉 신율(elongation)이 증가함에 따라서 높은 Tg을 가진 바인더로 제조된 실버 페이스트의 경우에는 40%이상에는 저항치 측정이 불가능했지만 낮은 Tg로 제조된 것은 80%까지 저항치가 측정되었다. 결론적으로 80%라는 높은 신율을 요구하는 분야에는 낮은 Tg을 가진 바인더를 사용하는 것이 바람직함을 알 수 있었다.

Ni-C composite films were prepared by co-deposition using a combined technique of plasma CVD and ion beam sputtering deposition. Depending on the deposition conditions, Ni-C thin films manifested three kinds of microstructure: (1) nanocrystallites of non-equilibrium carbide of nickel, (2) amorphous Ni-C film, and (3) granular Ni-C film. The electrical resistivity was also found to vary from about 102 μΩcm for the carbide films to about 104 μΩcm for the amorphous Ni-C films. The Ni-C films deposited at ambient temperatures showed very low TCR values compared with that of metallic nickel film, and all the films showed ohmic characterization, even those in the amorphous state with very high resistivity. The TCR value decreased slightly with increasing of the flow rate of CH4. For the films deposited at 200 oC, TCR decreased with increasing CH4 flow rate; especially, it changed sign from positive to negative at a CH4 flow rate of 0.35 sccm. By increasing the CH4 flow rate, the amorphous component in the film increased; thus, the portion of Ni3C grains separated from each other became larger, and the contribution to electrical conductivity due to thermally activated tunneling became dominant. This also accounts for the sign change of TCR when the filme was deposited at higher flow rate of CH4. The microstructures of the Ni-C films deposited in these ways range from amorphous Ni-C alloy to granular structures with Ni3C nanocrystallites. These films are characterized by high resistivity and low TCR values; the electrical properties can be adjusted over a wide range by controlling the microstructures and compositions of the films.

ZnO with wurtzite structure has a wide band gap of 3.37 eV. Because ZnO has a direct band gap and a large exciton binding energy, it has higher optical efficiency and thermal stability than the GaN material of blue light emitting devices. To fabricate ZnO devices with optical and thermal advantages, n-type and p-type doping are needed. Many research groups have devoted themselves to fabricating stable p-type ZnO. In this study, As+ ion was implanted using an ion implanter to fabricate p-type ZnO. After the ion implant, rapid thermal annealing (RTA) was conducted to activate the arsenic dopants. First, the structural and optical properties of the ZnO thin films were investigated for as-grown, as-implanted, and annealed ZnO using FE-SEM, XRD, and PL, respectively. Then, the structural, optical, and electrical properties of the ZnO thin films, depending on the As ion dose variation and the RTA temperatures, were analyzed using the same methods. In our experiment, p-type ZnO thin films with a hole concentration of 1.263 × 1018 cm−3 were obtained when the dose of 5 × 1014 As ions/cm2 was implanted and the RTA was conducted at 850 oC for 1 min.

To observe the bonding structure and electrical characteristics of a GZO oxide semiconductor, GZO was deposited on ITO glasses and annealed at various temperatures. GZO was found to change from crystal to amorphous with increasing of the annealing temperatures; GZO annealed at 200 oC came to have an amorphous structure that depended on the decrement of the oxygen vacancies; increase the mobility due to the induction of diffusion currents occurred because of an increment of the depletion layer. The increasing of the annealing temperature caused a reduction of the carrier concentration and an increase of the bonding energy and the depletion layer; therefore, the large potential barrier increased the diffusion current dna the Hall mobility. However, annealing temperatures over 200 oC promoted crystallinity by the defects without oxygen vacancies, and then degraded the depletion layer, which became an Ohmic contact without a potential barrier. So the current increased because of the absence of a potential barrier.

Ti films were deposited on glass substrates under various preparation conditions in a chamber of two-facing-target type dc sputtering; after deposition, the electric resistivity values were measured using a conventional four-probe method. Crystallographic orientations and microstructures, including the texture and columnar structure, were also investigated for the Ti films. The morphological features, including the columnar structures and surface roughness, are well explained on the basis of Thornton’s zone model. The electric resistivity and the thermal coefficient of the resistivity vary with the sputtering gas pressure. The minimum value of resistivity was around 0.4 Pa for both the 0.5 μm and 3.0 μm thick films; the apparent tendencies are almost the same for the two films, with a small difference in resistivity because of the different film thicknesses. The films deposited at high gas pressures show higher resistivities. The maximum of TCR is also around 0.4 Pa, which is the same as that obtained from the relationship between the resistivity and the gas pressure. The lattice spacing also decreases with increasing sputtering gas pressure for both the 0.5 μm and 3.0 μm thick films. Because they are strongly related to the sputtering gas pressures for Ti films that have a crystallographic anisotropy that is different from cubic symmetry, these changes are well explained on the basis of the film microstructures. It is shown that resistivity measurement can serve as a promising monitor for microstructures in sputtered Ti films.

This study reports the effects of H2S gas concentration on the properties of Cu2ZnSnS4(CZTS) thin films. Specifically, sulfurization process with low H2S concentrations of 0.05% and 0.1%, along with 5% H2S gas, was studied. CZTS films were directly synthesized on Mo/Si substrates by chemical bath deposition method using copper sulfate, zinc sulfate heptahydrate, tin chloride dihydrate, and sodium thiosulfate pentahydrate. Smooth CZTS films were grown on substrates at optimized chemical bath deposition condition. The CZTS films sulfurized at low H2S concentrations of 0.05 % and 0.1% showed very rough and porous film morphology, whereas the film sulfurized at 5% H2S yielded a very smooth and dense film morphology. The CZTS films were fully crystallized in kesterite crystal form when they were sulfurized at 500 oC for 1 h. The kesterite CZTS film showed a reasonably good room-temperature photoluminescence spectrum that peaked in a range of 1.4 eV to 1.5 eV, consistent with the optimal bandgap for CZTS solar cell applications.

There have been many studies on superwetting surfaces, ranging from superhydrophilicity to superhydrophobicity, owing to the variety of their potential applications. There are some drawbacks to developing these films for certain applications, such as the fragility of the microscopic roughness feature that is vital to ensure superwettability. At the first part of in this presentation, we fabricated intrinsically stable superwetting films using the organosilicate based layer-by-layer (LbL) self-assembly method in order to control hierarchical roughness and adjusted the surface chemistry of the multilayer structures. At the second part, hydrophilic branched poly(ethylenimine) and nanoparticle were assembled into LbL multilayers in the presence of UV-curable poly(urethane acrylate).

Tungsten trioxide thin films are successfully synthesized by a sol-gel method using tungsten hexachlorideas precursors. The structural, chemical, and optical properties of the prepared films are characterized by scanning elec-tron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and UV-Vis spectrophotometry. The electrochem-ical and electrochromic properties of the films before and after heat treatment are also investigated by cyclicvoltammetry, chronoamperometry, and in situ transmittance measurement system. Compared to as-prepared films, heat-treated tungsten trioxide thin films exhibit a higher electrochemical reversibility of 0.81 and superior coloration effi-ciency of 65.7 cm2/C, which implies that heat treatment at an appropriate temperature is a crucial process in a sol-gelmethod for having a better electrochromic performance.