The effects of electron beam(EB) irradiation on the electrical and optical properties of InGaZnO(IGZO) thin films fabricated using a sol-gel process were investigated. As the EB dose increased, the electrical characteristic of the IGZO TFTs changed from semiconductor to conductor, and the threshold voltage values shifted to the negative direction. X-ray photoelectron spectroscopy analysis of the O 1s core level showed that the relative area of oxygen vacancies increased from 14.68 to 19.08 % as the EB dose increased from 0 to 1.5 × 1016 electrons/cm2. In addition, spectroscopic ellipsometer analysis showed that the optical band gap varied from 3.39 to 3.46 eV with increasing EB dose. From the result of band alignment, it was confirmed that the Fermi level(EF) of the sample irradiated with 1.5 × 1016 electrons/cm2 was located at the closest position to the conduction band minimum(CBM) due to the increase of electron carrier concentration

육방정계 우르자이츠형의 산화아연은 n형 반도체로써 3.37 eV의 넓은 밴드갭 에너지와 60 meV의 큰 엑시톤 바인딩 에너지를 가진 물질이다. 가스센서, 발광 다이오드, 염료 감응 태양 전지, 염 료오염의 분해 등의 넓은 범위에서 활용이 가능하다. 합성 시 마이크로파 수열합성법을 사용하게 되면 높은 수율, 빠른 반응속도, 에너지 절약의 장점이 있다. 아민첨가제는 수산이온 생성 및 킬레이트 효과 로 인해 산화아연 입자 형상을 조정하는 역할을 한다. 본 논문에서는 전구체로는 질산아연육수화물을 사 용하였고, 형상조정제로는 에탄올아민, 에틸렌디아민, 디에틸렌트리아민, 헥사메틸렌테트라민을 사용하였 다. 수산화소듐을 사용하여 용액을 pH 11로 조정하였다. 합성된 산화아연은 별모양, 막대형, 꽃모양, 원 추형의 다양한 형상을 확인할 수 있었다. 아민첨가제에 의한 물리·화학적 특성과 광학적 특성을 분석하 기 위해 XRD, SEM, EDS, FT-IR, UV-vis 스펙트럼, PL 스펙트럼을 사용하였다.

목 적: 평균 제곱근 굴절력오차(RMSPE) 값을 적용하여 누진가입도렌즈(PALs)의 원용부, 중간거리부 및 근용부의 굴절력오차를 측정하여 광학적 특성을 분석하고자 하였다. 방 법: 현재 임상에서 처방되고 있는 17종(51개)의 누진가입도렌즈(원용부 굴절력은 0.00D, 가입도 1.50D, 2.00D 및 2.50D)를 무작위로 선정하였다. Free Form Verifier(FFV, Rotlex, Israel)를 이용하여 누 진가입도렌즈의 각 부위(0.5 mm 간격의 6953개 지점)에서 전면굴절력을 측정하였다. 원용부와 중간거리부 및 근용부의 각 지점에서 측정된 구면굴절력과 원주굴절력을, 각 지점에서 요구되는 굴절력과 편차를 나타 내는 RMSPE로 환산하였고, 0.25D 단계의 색 지형도로 표현하였다. 결 과: 17가지 누진가입도렌즈의 3가지 가입도에 대한 원용부 명시범위는 가입도 1.50D에서 9.53±5.25 mm, 2.00D에서 9.56±3.86 mm 및 2.50D에서 9.65±4.73 mm였고 가입도에 따라 유의한 차이가 없었다 (F=0.003, p=0.997). 중간거리부 명시범위는 가입도 1.50D에서 14.74±10.72 mm, 2.00D에서 9.09±5.28 mm 및 2.50D에서 6.79±3.89 mm로, 가입도가 증가할수록 감소하였다(F=5.394, p=0.008). 근용부 명시 범위는 가입도 1.50D에서 20.85±4.80 mm, 2.00D에서 14.82±4.42 mm 및 2.50D에서 11.65±5.98 mm로, 가입도가 증가할수록 크게 감소하였다(F=14.260, p=0.000). 또한 RMSPE 값을 적용한 색 지형도로부터 동 일한 디자인에서 가입도 변화에 따른 명시범위의 폭과 주변부 비점수차의 변화도를 쉽게 비교할 수 있었다. 결 론: 누진가입도렌즈의 다양한 디자인과 동일한 디자인에서 가입도의 변화에 따른 굴절력오차의 변화 를 분석할 수 있는 방법을 제시하였다. 임상에서 다양한 용도와 디자인을 비교적 간단하고 쉽게 분석하여 사 용자의 작업조건이나 특정요구에 적합한 디자인을 처방할 수 있는 기초적인 자료를 제공한 것으로 생각된다

목 적: Iodine을 수송매체로 사용한 화학수송법으로 성장시킨 CdS, CdS : Co2+ 및 CdS : Er3+단결정의 광학적 특성연구를 하였다. 방 법: CdS, CdS : Co 및 CdS : Er 단결정을 성장시키기 위하여 고순도(99.9999 %)의 cadmium, sulfur 를 mole비로 칭량하고 수송물질로 iodine(순도 99.99%)을 함께 준비된 석영관 안에 넣고, 석영관 내부의 진 공을 5×10-6torr로 유지하면서 봉입하여 성장용 ampoule을 만들었다. 단결정을 성장시키기 위하여 시료 출발 측을 900 ℃, 성장 측을 700 ℃로 하여 7일간 성장시켰다. 성장된 단결정에서 iodine 을 제거하기 위하여 출발 측의 전원을 차단하고 성장 측의 온도를 250℃에서 10 시간동안 유지하여 전원을 끊고 실온까지 서냉하여, CdS, CdS : Co 및 CdS : Er단결정을 성장시켰다. 성장된 단결정의 결정구조는 X-ray diffractometer를 사용하여 X선 회절선을 측정하였고, 광흡수 특성은 UV-VIS-NIR spectrophotometer 로 측정하였다. 결과 및 고찰: XRD로 측정한 X선 회절무늬 peak 해석으로부터 구한 CdS 및 CdS : Co2+(2mole%) 단결정의 결정구조는 defect chalcopyrite 구조이었으며 CdS : Er3+(2mole%) 단결정은 hexagonal 구조였다. 에너지 띠 간격은 직접 전이형 밴드구조를 나타냈다. 결 론: 성장된 CdS 및 CdS : Co2+(2mole%) 단결정의 결정구조는 defect chalcopyrite 구조이었으며, 격자 상수는 CdS 단결정의 경우 a = 4.139Å, c = 6.716Å이였고, 불순물로 cobalt를 첨가한 CdS : Co2+(2mole%) 단결정의 경우 a = 4.141Å, c = 6.720Å이였으며, 또한 erbium을 첨가한 CdS : Er3+(2mole%) 단결정의 구조 는 hexagonal 구조이었으며, 격자상수는 a = 4.135Å, b = 4.135Å, c = 6.706Å이었다. 298K에서 순수한 CdS 단결정의 에너지 띠 간격은 2.422e V이었고, 불순물로 전이금속인 cobalt(2mole%) 첨가할 때 에너지 띠 간격은 2.331e V, 또한 희토류금속인 erbium(2mole%) 첨가한 경우 에너지 띠 간격은 2.230e V 이었다.

목적: RMSPE 값(Root Mean Square Power Error Value)을 적용하여 누진 가입도 렌즈의 부 위별 오류 값을 도식화하여 디자인에 따른 광학적 특성을 분석하고자 하였다. 방법: 임상에서 처방되고 있는 17가지의 누진 가입도 렌즈(원용부 굴절력이 0.00D이고 가입도 가 1.50D, 2.00D 및 2.50D)를 대상으로 선정하였다. Free Form Verifier(FFV, Rotlex, Israel) 를 사용하여 대상의 전면 굴절력을 측정하였다. 0.5mm 간격의 6953개 지점의 측정값을 RMSPE 값으로 산출하여 원용부 및 중간거리 그리고 근용부 굴절력의 분포를 각각 도식화하였 다. 결과: 원용부, 중간거리부 및 근용부의 각 지점에서 요구되는 굴절력과 RMSPE의 차이로부터 명시범위와 주변부 굴절력의 분포를 0.25D 간격으로 나타내었다. 각 디자인 및 동일 디자인에 서 가입도 증가에 따른 굴절력 분포 특성을 쉽게 구별할 수 있었다. 등가구면굴절력을 적용했 을 때보다 부위별 오차값이 더 컸다. 결론: 전면굴절력에 대한 RMSPE를 부위별로 요구되는 굴절력과 비교하여 원용부, 중간거리부 및 근용부의 명시범위를 동시에 표현하고, 누진가입도렌즈의 디자인 및 가입도 변화에 따른 광 학적 특성을 편리하게 비교 분석할 수 있는 방법을 제시하였다고 생각된다.

Sb-doped SnO2(ATO) thin films were prepared using electrospinning. To investigate the optimum properties of the electrospun ATO thin films, the deposition numbers of the ATO nanofibers(NFs) were controlled to levels of 1, 2, 4, and 6. Together with the different levels of deposition number, the structural, chemical, morphological, electrical, and optical properties of the nanofibers were investigated. As the deposition number of the ATO NFs increased, the thickness of the ATO thin films increased and the film surfaces were gradually densified, which affected the electrical properties of the ATO thin films. 6 levels of the ATO thin film exhibited superior electrical properties due to the improved carrier concentration and Hall mobility resulting from the increased thickness and surface densification. Also, the thickness of the samples had an effect on the optical properties of the ATO thin films. The ATO thin films with 6 deposited levels displayed the lowest transmittance and highest haze. Therefore, the figure of merit(FOM) considering the electrical and optical properties showed the best value for ATO thin films with 4 deposited levels.

Fluorine-doped SnO2 (FTO) thin film/Ag nanowire (NW) double layers were fabricated by means of spin coating and ultrasonic spray pyrolysis. To investigate the optimum thickness of the FTO thin films when used as protection layer for Ag NWs, the deposition time of the ultrasonic spray pyrolysis process was varied at 0, 1, 3, 5, or 10 min. The structural, chemical, morphological, electrical, and optical properties of the double layers were examined using X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, transmission electron microscopy, the Hall effect measurement system, and UV-Vis spectrophotometry. Although pure Ag NWs formed isolated droplet-shaped Ag particles at an annealing temperature of 300 oC, Ag NWs covered by FTO thin films maintained their high-aspect-ratio morphology. As the deposition time of the FTO thin films increased, the electrical and optical properties of the double layers degraded gradually. Therefore, the double layer fabricated with FTO thin films deposited for 1 min exhibited superb sheet resistance (~14.9Ω/□), high optical transmittance (~88.6 %), the best FOM (~19.9 × 10−3 Ω−1), and excellent thermal stability at an annealing temperature of 300 oC owing to the good morphology maintenance of the Ag NWs covered by FTO thin films.

A zinc oxide (ZnO) hybrid structure was successfully fabricated on a glass substrate by metal organic chemical vapor deposition (MOCVD). In-situ growth of a multi-dimensional ZnO hybrid structure was achieved by adjusting the growth temperature to determine the morphologies of either film or nanorods without any catalysts such as Au, Cu, Co, or Sn. The ZnO hybrid structure was composed of one-dimensional (1D) nanorods grown continuously on the two-dimensional (2D) ZnO film. The ZnO film of 2D mode was grown at a relatively low temperature, whereas the ZnO nanorods of 1D mode were grown at a higher temperature. The change of the morphologies of these materials led to improvements of the electrical and optical properties. The ZnO hybrid structure was characterized using various analytical tools. Scanning electron microscopy (SEM) was used to determine the surface morphology of the nanorods, which had grown well on the thin film. The structural characteristics of the polycrystalline ZnO hybrid grown on amorphous glass substrate were investigated by X-ray diffraction (XRD). Hall-effect measurement and a four-point probe were used to characterize the electrical properties. The hybrid structure was shown to be very effective at improving the electrical and the optical properties, decreasing the sheet resistance and the reflectance, and increasing the transmittance via refractive index (RI) engineering. The ZnO hybrid structure grown by MOCVD is very promising for opto-electronic devices as Photoconductive UV Detectors, anti-reflection coatings (ARC), and transparent conductive oxides (TCO).

목 적: 본 연구는 일반 카메라를 이용하여 누진 가입도 렌즈(Progressive Addition Lens : PAL)의 원용부, 주변부, 중간 거리부 및 근용부의 광학 수차 분포도를 분석하고자 하였다. 방 법: 카메라를 이용하여 렌즈 사진을 촬영하고 촬영된 이미지에서 수차가 발생하는 근용부와 주변부를 확대하였다. PAL의 비점수차와 왜곡을 MATLAB 공학용 프로그램을 이용하여 계산하였다. 결 과: PAL의 비점수차가 카메라로 찍은 이미지에서 확연히 나타났으며 렌즈의 가입도가 증가함에 따라 비점수차의 정도도 증가하였다. 또한 비점수차가 나타나는 곳에서 왜곡 현상과 흐린 상이 맺히는 것을 확인하였다. 결 론: 일반 카메라와 PAL 촬영에 의한 이미지로 소비자의 PAL의 이해도가 향상되어 소비자의 만족도 향상에 기여할 수 있을 것으로 보인다. 또한 PAL을 설계할 때 모의실험의 기초로 응용될 수 있을 것이다.

Solution-based Sb-doped SnO2 (ATO) transparent conductive oxides using a low-temperature process werefabricated by an electrospray technique followed by spin coating. We demonstrated their structural, chemical, morphological,electrical, and optical properties by means of X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanningelectron microscopy, atomic force microscopy, Hall effect measurement system, and UV-Vis spectrophotometry. In order toinvestigate optimum electrical and optical properties at low-temperature annealing, we systemically coated two layer, four layer,and six layers of ATO sol-solution using spin-coating on the electrosprayed ATO thin films. The resistivity and opticaltransmittance of the ATO thin films decreased as the thickness of ATO sol-layer increased. Then, the ATO thin films with twosol-layers exhibited superb figure of merit compared to the other samples. The performance improvement in a low temperatureprocess (300oC) can be explained by the effect of enhanced carrier concentration due to the improved densification of the ATOthin films causing the optimum sol-layer coating. Therefore, the solution-based ATO thin films prepared at 300oC exhibitedthe superb electrical (~7.25×10−3Ω·cm) and optical transmittance (~83.1%) performances.

본 연구에서는 240 W급 고출력 LED 집어등의 특성을 기존 메탈 집어등과 비교하여 배광 패턴의 특성 및 광효율을 분석하고, 파장 대역의 특성을 해양 투과 특성 및 시감도를 고려하여 집어등 광원으로써 적정성을 분석하였다. 색온도 6500 K, white LED 패키지를 적용한 240 W LED 집어등의 특성을 보면 배광각은 ±45°, 조도 변화률이 0.8로 개선되었으며, 광효율은 98.8 lm/W로 향상되었다. LED 집어등의 해수의 투과율과 인간의 암순응시 시감도를 1,500 W 메탈등 1개와 4개의 240 W LED 집어등에 적용하여 비교한 결과, 방사출력이 수심 50 m에 이르면 거의 동등하였으며, 암순응시 시감도만을 적용한 경우에도 LED 집어등이 약 5 % 정도 높은 광속을 나타내었으며, 수심 50 m의 방사출력에 암순응시 시감도를 적용한 경우 LED 집어등의 광속이 14 % 높게 나타나 메탈등의 대체 가능성을 확인할 수 있었다.

The electrical and optical properties of fluorine-doped tin oxide films grown on polyethylene terephthalate film witha hardness of 3 using electron cyclotron resonance plasma with linear microwave of 2.45GHz of high ionization energy wereinvestigated. Fluorine-doped tin oxide films with a magnetic field of 875 Gauss and the highest resistance uniformity wereobtained. In particular, the magnetic field could be controlled by varying the distribution in electron cyclotron depositionpositions. The films were deposited at various gas flow rates of hydrogen and carrier gas of an organometallic source. Thesurface morphology, electrical resistivity, transmittance, and color in the visible range of the deposited film were examined usingSEM, a four-point probe instrument, and a spectrophotometer. The electromagnetic field for electron cyclotron resonancecondition was uniformly formed in at a position 16cm from the center along the Z-axis. The plasma spatial distribution ofmagnetic current on the roll substrate surface in the film was considerably affected by the electron cyclotron systems. Therelative resistance uniformity of electrical properties was obtained in film prepared with a magnetic field in the current rangeof 180~200A. SEM images showing the surface morphologies of a film deposited on PET with a width of 50cm revealedthat the grains were uniformly distributed with sizes in the range of 2~7nm. In our experimental range, the electrical resistivityof film was able to observe from 1.0×10−2 to 1.0×10−1Ωcm where optical transmittance at 550nm was 87~89%. Theseproperties were depended on the flow rate of the gas, hydrogen and carrier gas of the organometallic source, respectively.

Use of low bandgap polymers is the most suitable way to harvest a broader spectrum of solar radiations for solar cells. But, still there is lack of most efficient low bandgap polymer. In order to solve this problem, we have synthesised a new low bandgap polymer and investigated its interaction with the ILs to enhance its conductivity. ILs may undergo almost unlimited structural variations; these structural variations have attracted extensive attention in polymer studies. In addition to this, UV-Vis spectroscopy, confocal Raman spectroscopy and FT-IR spectroscopy results have revealed that all studied ILs (tributylmethylammonium methyl sulfate [N1444] MeSO4] from ammonium family) and 1-methylimidazolium chloride ([MIM]Cl, and 1-butyl-3-methylimidazolium chloride [Bmim]Cl from imidazolium family) has potential to interact with polymer. Further, protic ILs shows enhanced conductivity than aprotic ILs with low bandgap polymer. This study provides the combined effect of low bandgap polymer and ILs that may generate many theoretical and experimental opportunities.

Al-doped ZnO(AZO) thin films were synthesized using atomid layer deposition(ALD), which acurately controlledthe uniform film thickness of the AZO thin films. To investigate the electrical and optical properites of the AZO thin films,AZO films using ALD was controlled to be three different thicknesses (50nm, 100nm, and 150nm). The structural, chemical,electrical, and optical properties of the AZO thin films were analyzed by X-ray diffraction, X-ray photoelectron spectroscopy,field-emssion scanning electron microscopy, atomic force microscopy, Hall measurement system, and UV-Visspectrophotometry. As the thickness of the AZO thin films increased, the crystallinity of the AZO thin films gradually increased,and the surface morphology of the AZO thin films were transformed from a porous structure to a dense structure. The averagesurface roughnesses of the samples using atomic force microscopy were ~3.01nm, ~2.89nm, and ~2.44nm, respectively. Asthe thickness of the AZO filmsincreased, the surface roughness decreased gradually. These results affect the electrical and opticalproperties of AZO thin films. Therefore, the thickest AZO thin films with 150nm exhibited excellent resistivity (~7.00×10−4Ω·cm), high transmittance (~83.2%), and the best FOM (5.71×10−3Ω−1). AZO thin films fabricated using ALD may be usedas a promising cadidate of TCO materials for optoelectronic applications.

Vanadium dioxide (VO2) is an attractive material for smart window applications where the transmittance of light can be automatically modulated from a transparent state to an opaque state at the critical temperature of ~68˚C. Meanwhile, F : SnO2 (F-doped SnO2, FTO) glass is a transparent conductive oxide material that is widely used in solar-energy-related applications because of its excellent optical and electrical properties. Relatively high transmittance and low emissivity have been obtained for FTO-coated glasses. Tunable transmittance corresponding to ambient temperature and low emissivity can be expected from VO2 films deposited onto FTO glasses. In this study, FTO glasses were applied for the deposition of VO2 thin films by pulsed DC magnetron sputtering. VO2 thin films were also deposited on a Pyrex substrate for comparison. To decrease the phase transition temperature of VO2, tungsten-doped VO2 films were also deposited onto FTO glasses. The visible transmittance of VO2/FTO was higher than that of VO2/pyrex due to the increased crystallinity of the VO2 thin film deposited on FTO and decreased interface reflection. Although the solar transmittance modulation of VO2/FTO was lower than that of VO2/pyrex, room temperature solar transmittance of VO2/FTO was lower than that of VO2/pyrex, which is advantageous for reflecting solar heat energy in summer.

ZnO thin films co-doped with Mg and Ga (MxGyZzO, x+y+z=1, x=0.05, y=0.02 and z=0.93) were preparedon glass substrates by RF magnetron sputtering with different sputtering powers ranging from 100W to 200W at a substratetemperature of 350oC. The effects of the sputtering power on the structural, morphological, electrical, and optical propertiesof MGZO thin films were investigated. The X-ray diffraction patterns showed that all the MGZO thin films were grown asa hexagonal wurtzite phase with the preferred orientation on the c-axis without secondary phases such as MgO, Ga2O3, orZnGa2O4. The intensity of the diffraction peak from the (0002) plane of the MGZO thin films was enhanced as the sputteringpower increased. The (0002) peak positions of the MGZO thin films was shifted toward, a high diffraction angle as thesputtering power increased. Cross-sectional field emission scanning electron microscopy images of the MGZO thin filmsshowed that all of these films had a columnar structure and their thickness increased with an increase in the sputtering power.MGZO thin film deposited at the sputtering power of 200W showed the best electrical characteristics in terms of the carrierconcentration (4.71×1020cm−3), charge carrier mobility (10.2cm2V−1s−1) and a minimum resistivity (1.3×10−3Ωcm). A UV-visible spectroscopy assessment showed that the MGZO thin films had high transmittance of more than 80% in the visibleregion and that the absorption edges of MGZO thin films were very sharp and shifted toward the higher wavelength side, from270nm to 340nm, with an increase in the sputtering power. The band-gap energy of MGZO thin films was widened from3.74eV to 3.92eV with the change in the sputtering power.

ZnO thin films were grown on a sapphire substrate by RF magnetron sputtering. The characteristics of the thin films were investigated by ellipsometry, X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL), and Hall effect. The substrate temperature and growth time were kept constant at 200˚C at 30 minutes, respectively. The RF power was varied within the range of 200 to 500 W. ZnO thin films on sapphire substrate were grown with a preferred C-axis orientation along the (0002) plan; X-ray diffraction peak shifted to low angles and PL emission peak was red-shifted with increasing RF power. In addition, the electrical characteristics of the carrier density and mobility decreased and the resistivity increased. In the electrical and optical properties of ZnO thin films under variation of RF power, the crystallinity improved and the roughness increased with increasing RF power due to decreased oxygen vacancies and the presence of excess zinc above the optimal range of RF power. Consequently, the crystallinity of the ZnO thin films grown on sapphire substrate was improved with RF sputtering power; however, excess Zn resulted because of the structural, electrical, and optical properties of the ZnO thin films. Thus, excess RF power will act as a factor that degrades the device characteristics.

We report the effect of the chain length of carboxylic acid on the photoluminescence(PL) of /ZnS nanocrystals. /ZnS nanocrystals with emission wavelength ranging from 566 nm through 583 nm were synthesized with zinc acetate and carboxylic acids with various chain length. In this study, /ZnS nanocrystals prepared using long chain carboxylic acid showed more improved PL intensity. The origin of strong photoluminescence of the nanocrystals prepared with zinc acetate and long chain carboxylic acid was ascribed to improved size distribution due to strong reactivity between long chain carboxylic acid and zinc acetate.