Due to their novel properties, GaN based semiconductors and their nanostructures are promising components in a wide range of nanoscale device applications. In this work, the gallium nitride is deposited on c-axis oriented sapphire and porous SWCNT substrates by molecular beam epitaxy using a novel single source precursor of Me2Ga(N3)NH2C(CH3)3 with ammonia as an additional source of nitrogen. The advantage of using a single molecular precursor is possible deposition at low substrate temperature with good crystal quality. The deposition is carried out in a substrate temperature range of 600-750˚C. The microstructural, structural, and optical properties of the samples were analyzed by scanning electron microscopy, X-ray diffraction, Raman spectroscopy, and photoluminescence. The results show that substrate oriented columnar-like morphology is obtained on the sapphire substrate while sword-like GaN nanorods are obtained on porous SWCNT substrates with rough facets. The crystallinity and surface morphology of the deposited GaN were influenced significantly by deposition temperature and the nature of the substrate used. The growth mechanism of GaN on sapphire as well as porous SWCNT substrates is discussed briefly.

This study develops a highly transparent ohmic contact scheme using indium oxide doped ZnO (IZO)as a current spreading layer for p-GaN in order to increase the optical output power of nitride-based light-emitting diodes (LEDs). IZO based contact layers of IZO, Ni/IZO, and NiO/IZO were prepared by e-beamevaporation, followed by a post-deposition annealing. The transmittances of the IZO based contact layers werein excess of 80% throughout the visible region of the spectrum. Specific contact resistances of 3.4×10−4,1.2×10−4, 9.2×0−5, and 3.6×10−5Ω·cm2 for IZO, Ni/Au, Ni/IZO, and NiO/IZO, respectively were obtained. Theforward voltage and the optical output power of GaN LED with a NiO/IZO ohmic contact was 0.15V lower andwas increased by 38.9%, respectively, at a forward current of 20mA compared to that of a standard GaN LEDwith an Ni/Au ohmic contact due to its high transparency, low contact resistance, and uniform current spreading.

This study develops a highly transparent ohmic contact using phosphorus doped ZnO with current spreading for p-GaN to increase the optical output power of nitride-based light-emitting diodes (LEDs). The phosphorus doped ZnO transparentohmic contact layer was prepared by radio frequency magnetron sputtering with post-deposition annealing. The transmittance ofthe phosphorus doped ZnO exceeds 90% in the region of 440nm to 500nm. The specific contact resistance of the phosphorusdoped ZnO on p-GaN was determined to be 7.82×10-3Ω·cm2 after annealing at 700oC. GaN LED chips with dimensions of300×300µm fabricated with the phosphorus doped ZnO transparent ohmic contact were developed and produced a 2.7Vincrease in forward voltage under a nominal forward current of 20mA compared to GaN LED with Ni/Au Ohmic contact.However, the output power increased by 25% at the injection current of 20mA compared to GaN LED with the Ni/Au contactscheme.

Growth behavior of InGaN/GaN self-assembled quantum dots (QDs) was investigated with respect to different growth parameters in low pressure metalorganic chemical vapor deposition. Locally formed examples of three dimensional InGaN islands were confirmed from the surface observation image with increasing indium source ratio and growth time. The InGaN/GaN QDs were formed in Stranski-Krastanow (SK) growth mode by the continuous supply of metalorganic (MO) sources, whereas they were formed in the Volmer-Weber (V-W) growth mode by the periodic interruption of the MO sources. High density InGaN QDs with 1~2nm height and 40~50nm diameter were formed by the S-K growth mode. Dome shape InGaN dots with 200~400nm diameter were formed by the V-W growth mode. InN content in InGaN QDs was estimated to be reduced with the increase of growth temperature. A strong peak between 420-460 nm (2.96-2.70 eV) was observed for the InGaN QDs grown by S-K growth mode in photoluminescence spectrum together with the GaN buffer layer peak at 362.2 nm (3.41 eV).

Mg-doped and In-Mg co-doped p-type GaN epilayers were grown in a low-pressure metal organic chemical vapor deposition technique. The effect of In doping on the p-GaN layer was studied through photoluminescence (PL), persistent photoconductivity (PPC), and transmission electron microscopy (TEM) at room temperature. For the In-doped p-GaN layer, the PL intensity increases significantly and the peak position shifts to 3.2 eV from 2.95 eV of conventional p-GaN. Additionally, In doping greatly reduces the PPC, which was very strong in conventional p-GaN. A reduction in the dislocation density is also evidenced upon In doping in p-GaN according to TEM images. The improved optical properties of the In-doped p-GaN layer are attributed to the high crystalline quality and to the active participation of incorporated Mg atoms.

儒學은 기본적으로 인간의 사회적 존재됨에 주목하고, 그 실현에 진력하는 학문이다. 19세기 한말의 사회는 정치, 경제, 문화 기타 모든 분야에 걸쳐서 미중유의 혼란과 위기에 놓여 있었다. 艮齋 田愚는 우리 역사상 초유의 난세에 처하여 견디기 어려운 고뇌의 삶을 살았던 것으로 보인다. 그러면 그의 출처는 그렇게 비난을 받아야 마땅한 것일까? 그는 끝까지 ‘守道’로써 일관하였다. 그렇기 때문에 비난이 일어났는데, 간재가 외연의 행적과는 달리 후세 사람들로부터 정당하게 평가 받고자 했던 속뜻은 무엇이었을까? 그에 대한 儒學思想史的 자리매김은 이런 논의를 거치지 않고서는 오류를 면하기 어려울 것이다. 이상의 관점으로 간재의 ‘去之守義의 守道意識’과 ‘自靖의 出處觀’을 살펴보았다. 간재의 ‘去之守義의 守道意識’에서는 그는 단순히 난세를 피하여 자기 한 몸 깨끗이 살겠다고 숨어 지내는 것이 아니라, 죽음에 이르더라도 수도하며 살겠다는 의지를 표현하였다. 그는 유학자의 본분은 도의 수호와 실천으로 여겼음을 확인할 수 있었다. ‘自靖의 출처관’에서는 도를 지켜야 한다는 확고한 신념에서 비롯된 것을 확인할 수 있었다. 또한 수도하여 후일을 기약하고, 사회 기강 확립을 위한 근간으로 생각하였음을 확인 하였다. 본고의 이러한 말이 간재의 학문과 의리를 억지로 정당화 한다거나 굳이 옹호하고 과대평가하기 위해서가 아니라, 다만 한 사람의 학행과 인간을 이해하고 평가함에 있어서는 편협하거나 일면적인 것만을 기준으로 해서는 안된다는 것을 전제한다.