The effect of light scattering layers (400 nm, TiO particle) of 4 m thickness on the dye-sensitized solar cell has been investigated with a 12 m thickness of photo-anode (20 nm, TiO particle). Two different structures of scattering layers (separated and back) were applied to investigate the light transmitting behaviors and solar cell properties. The light transmittance and cell efficiency significantly improved with inserting scattering layers. The back scattering layer structure had more effective transmitting behavior, but separated scattering layer (center: 2 m, back: 2 m) structure (9.83% of efficiency) showing higher efficiency (0.6%), short circuit current density (0.26 mA/cm) and fill factor (0.02). The inserting separating two scattering layers improved the light harvesting, and relatively thin back scattering layer (2 m of thickness) minimized interruption of ion diffusion in liquid electrolyte.

Changes in the surface morphology and light scattering of textured Al doped ZnO thin films on glasssubstrates prepared by rf magnetron sputtering were investigated. As-deposited ZnO:Al films show a hightransmittance of above 80% in the visible range and a low electrical resistivity of 4.5×10-4Ω·cm. The surfacemorphology of textured ZnO:Al films are closely dependent on the deposition parameters of heater temperature,working pressure, and etching time in the etching process. The optimized surface morphology with a cratershape is obtained at a heater temperature of 350oC, working pressure of 0.5 mtorr, and etching time of 45seconds. The optical properties of light transmittance, haze, and angular distribution function (ADF) aresignificantly affected by the resulting surface morphologies of textured films. The film surfaces, havinguniformly size-distributed craters, represent good light scattering properties of high haze and ADF values.Compared with commercial Asahi U (SnO2:F) substrates, the suitability of textured ZnO:Al films as frontelectrode material for amorphous silicon thin film solar cells is also estimated with respect to electrical andoptical properties.

The influence of various surface morphologies on the mechanical strength of silicon substrates was investigated in this study. The yield for the solar cell industry is mainly related to the fracturing of silicon wafers during the manufacturing process. The flexural strengths of silicon substrates were influenced by the density of the pyramids as well as by the size and the rounded surface of the pyramids. To characterize and optimize the relevant texturing process in terms of mechanical stability and the fabrication yield, the mechanical properties of textured silicon substrates were investigated to optimize the size and morphology of random pyramids. Several types of silicon substrates were studied, including the planar type, a textured surface with large and small pyramids, and a textured surface with rounded pyramids. The surface morphology and a cross-section of the as-textured and fractured silicon substrates were investigated by scanning electron microscopy.

염료감응형 태양전지에 사용되기 위한 유기/무기 복합소재를 합성하였다. 다양한 분자량(400, 600, 1,500, 3,400)의 polyethylene glycol의 양 끝단을 ethoxysilane기로 치환하여 전구체를 제조하였으며, 전구체의 졸-겔 반응을 통하여 복합소재를 합성하였다. 전해질막은 유기/무기 복합소재를 NaI 및 I2로 도핑하여 제조하였으며, 제조한 전해질막의 이온전도 특성을 측정하였다. 전해질막의 이온전도도는 원료로 사용한 PEG에 크게 영향을 받았으며 가장 높은 이온전도도는 분자량 1,500의 PEG를 원료로 사용한 전해질 막에서 볼 수 있었다. 복합전해질막은 전도도에 있어서 큰 향상을 보였다. PEO 전해질막에 비하여 분자량 1,500의 PEC로 제조한 복합전해질막은 월등하게 높은 이온전도도를 보였다.

The simulation program for solar cells, PC1D, was briefly reviewed and the device modeling of a multicrystalline Si solar cell using the program was carried out to understand the internal operating principles. The effects of design parameters on the light absorption and the quantum efficiency were investigated and strategies to reduce carrier recombination, such as back surface field and surface passivation, were also characterized with the numerical simulation. In every step of the process, efficiency improvements for the key performance characteristics of the model device were determined and compared with the properties of the solar cell, whose efficiency (20.3%) has been confirmed as the highest in multicrystalline Si devices. In this simulation work, it was found that the conversion efficiency of the prototype model (13.6%) can be increased up to 20.7% after the optimization of design parameters.

In this paper, a novel non-vacuum technique is described for the fabrication of a CuInSe2 (CIS) absorber layer for thin film solar cells using a low-cost precursor solution. A solution containing Cu- and Inrelated chemicals was coated onto a Mo/glass substrate using the Doctor blade method and the precursor layer was then selenized in an evaporation chamber. The precursor layer was found to be composed of CuCl crystals and amorphous In compound, which were completely converted to chalcopyrite CIS phase by the selenization process. Morphological, crystallographic and compositional analyses were performed at each step of the fabrication process by SEM, XRD and EDS, respectively.

In the fabrication of dye-sensitized solar cells (DSSCs), carbon counter electrode has been tested for replacing the platinum counter electrode which has two drawbacks: limited surface area and high material cost. Poor mechanical stability of carbon layer due to weak bonding strength to electrically conductive TCO (transparent conducting oxide) glass substrate is a crucial barrier for practical application of carbon counter electrode. In the present study a carbon counter electrode with high conversion efficiency, comparable to Pt counter electrode, could be fabricated by adaption of a bonding layer between particulate carbon material and TCO substrate.

Dye-sensitized solar cells(DSSCs) have been under investigation for the past decade due to their attractive features such as high energy conversion efficiency and low production costs. The basis for energy conversion in the injection of electrons from a photoexcited stateof a dye sensitizer into the conduction band of the nanocrystalline semiconductor upon absorption of light. It is believed that the DSSC is one of the most promising technologies to solve the significant energy problems. In this article, the development trends and perspective of DSSCs were reviewed.

The polycrystalline CdS of large scale were grown by chemical pyrolysis deposition for Cu2S/CdS heterojunction solar cells. For high quality CdS polycrystalline thin films, the chemical solution was deposited on indium tin oxide(ITO) glasses at the temperature of 500℃ for 15 second and annealed at 350℃ for 20 minute or 500℃ for 30 second. To fabricate high efficiency solar cells, optical and electrical properties, morphology by SEM and x-ray diffraction on polycrystalline CdS thin films were investigated. From the I-V characteristics of Cu2S/CdS heterojunction, the open circuit voltage, Voc was 0.7 V and the short circuit current, Isc was 4.2 mA. We found that the fill factor(FF) was 0.5 and the efficiency was 2.5%.

플라즈마 화학증착 (PECVD) 장비를 이용하여 SnO2 투명전도막이 피막된 유리기판 위에 p-SiC/i-Si/n-Si 이종접합 태양전지를 제작하였다. p-SiC 층의 증착중에 기체조성 x=CH4/ (SiH4+CH4)의 변화에 대한 태양전지의 광기전 특성을 관찰하였다. 기체조성(x)이 0~0.4의 범위에서 p-SiC 창층의 광학적 밴드갭의 증가로 인하여 태양전지의 효율은 증가하였으나, 그 이상의 기체조성에서는 p-SiC/i-Si 계면에서의 조성불일치가 증가하여 태양전지의 효율이 감소하였다. 이러한 계면문제는 p-SiC 층과 i-Si 계면에서의 조성불일치가 증가하여 태양전지의 효율이 감소하였다. 이러한 계면문제는 p-SiC 층과 I-Si 층 사이에 I-SiC 완충층을 삽입함으로써 크게 감소하였다. 그 결과 유효면적이 1cm2인 glass/SnO2/p-SiC/i-SiC/i-Si/n-Si/Ag 구조의 박막 태양전지는 100mW/cm2 조도 하에서 8.6%의 효율을 나타내었다. (Voc=0.85V, Jsc=16.42mA/cm2, FF=0.615)

본 연구에서는 SOI 구조를 이용한 50μm 두계의 규소 태양전지의 이용 가능성과 제한사항을 제시하기 위하여, interdigitated contact을 이용한 전극을 형성하도록 전지를 설계한 후 단계별 사진공정을 통해 태양전지를 제조하였다. Bonded SOI wafer를 이용하여 제조된 50μm 두께의 결정질 규소 태양전지의 효율은 전극간격이 1100μm과 base width가 35μm인 경우에서 11.5%로 가장 높은 값을 나타내었다. 또한 실험결과로부터 전면전극을 이용한 태양전지의 구조는 power loss를 최소화하는 최적의 base fraction을 적용하는 것이 필요하며, 전지의 효율은 fill factor에 강한 의존성을 나타내기 때문에 fill factor loss를 최소화하는 설계조건이 필요함을 알 수 있었다.