Surface plasmon resonance is the resonant oscillation of conduction electrons at the interface between negative and positive permittivity material stimulated by incident light. In particular, when light transmits through the metallic microhole structures, it shows an increased intensity of light. Thus, it is used to increase the efficiency of devices such as LEDs, solar cells, and sensors. There are various methods to make micro-hole structures. In this experiment, micro holes are formed using a wet chemical etching method, which is inexpensive and can be mass processed. The shape of the holes depends on crystal facets, temperature, the concentration of the etchant solution, and etching time. We select a GaAs(100) single crystal wafer in this experiment and satisfactory results are obtained under the ratio of etchant solution with H2SO4:H2O2:H2O = 1:5:5. The morphology of micro holes according to the temperature and time is observed using field emission - scanning electron microscopy (FE-SEM). The etching mechanism at the corners and sidewalls is explained through the configuration of atoms.

The expansion of the display market could mass-produce the product which becomes the super-slim and ultra-lighting according to the demand of customer. This change etched the mobile display panel in order to make the thin glass. The wet etching refers to the process of removing selectively the unnecessary part in order to form the circuit pattern among the semi-conductor or the LCD manufacturing process. The wet etching can progress the etching about a large amount at a time but the thickness of glass is not smooth or not etched according to the process condition. In this study, the defect factor in the etching process tries to be analyze. The experimental design was established and the processing condition was optimized in order to minimize under non-etch part generation by the experiment of design.

The relationship the between electrical properties and surface roughness (Ra) of a wet-etched silicon wafer were studied. Ra was measured by an alpha-step process and atomic force microscopy (AFM) while varying the measuring range 10×10, 40×40, and 1000×1000μm. The resistivity was measured by assessing the surface resistance using a four-point probe method. The relationship between the resistivity and Ra was explained in terms of the surface roughness. The minimum error value between the experimental and theoretical resistivities was 4.23% when the Ra was in a range of 10×10μm according to AFM measurement. The maximum error value was 14.09% when the Ra was in a range of 40×40μm according to AFM measurement. Thus, the resistivity could be estimated when the Ra was in a narrow range.

The electrical properties and surface morphology changes of a silicon wafer as a function of the HF concentration as the wafer is etched were studied. The HF concentrations were 28, 30, 32, 34, and 36 wt%. The surface morphology changes of the silicon wafer were measured by an SEM (80˚ tilted at ×200) and the resistivity was measured by assessing the surface resistance using a four-point probe method. The etching rate increased as the HF concentration increased. The maximum etching rate 27.31 μm/min was achieved at an HF concentration of 36 wt%. A concave wave formed on the wafer after the wet etching process. The size of the wave was largest and the resistivity reached 7.54 ohm·cm at an 30 wt% of HF concentration. At an HF concentration of 30 wt%, therefore, a silicon wafer should have good joining strength with a metal backing as well as good electrical properties.

In this study we investigated the effect of the multi-step texturing process on the electrical and optical properties of hydrogenated Al-doped zinc oxide (HAZO) thin films deposited by rf magnetron sputtering. AZO films on glass were prepared by changing the H2/(Ar+H2) ratio at a low temperature of 150˚C. The prepared HAZO films showed lower resistivity and higher carrier concentration and mobility than those of non-hydrogenated AZO films. After deposition, the surface of the HAZO films was multi-step textured in diluted HCl (0.5%) for the investigation of the change in the optical properties and the surface morphology due to etching. As a result, the HAZO film fabricated under the type III condition showed excellent optical properties with a haze value of 52.3%.

열증착기(thermal evaporator)로 증착시킨 Cu를 상온에서 3.5M CuCl2+0.5M HCI+0.5MKCI 용액을 사용하여 습식각하고 2일간 대기중 노출시킨 후 X-선 광전자 분광기를 이용하여 표면의 결합상태를 관찰하였다. 그 결과 습식식각된 Cu 표면에서는 C, O, Ci 및 Cu가 존재함을 알 수 있었다. 표면원소에 대한 오제이 전자 스펙트라(Auger electron spectra)와 광전자 스펙트라(photoelectron spectra)의 정량적인 비교를 통하여 표면의 모든 결합상태를 확인할 수 있었고 그 상대적인 양까지도 얻어낼 수 있었다. 식각된 Cu의 표면에는 Cu-Cu, 2Cu-O, Cu-Ci, Cu-2(OH), 및 Cu-2Cl의 결합상태가 존재함을 알 수 있었고, CuLMMAuger line spectrum의 관찰을 통하여 계산된 각 결합의 정량적인 비교를 검증할 수 있었다. 따라서 chemical shift가 거의 관찰되지 않아 결합상태 분리가 불가능한 식각된 구리표면의 정량적 결합상태는 각 결합상태의 상대적 비교를 통하여 얻어질 수 있음을 알 수 있었다.

콘택 홀 패턴의 미세화가 HF 용액의 침투에 미치는 영향을 파악하고자, 미세 채널 패턴에서의 산화막 습식 식각 특성을 조사하였다. LPCVD로 증착된 산화막을 두께 0.1~1μm, 선폭 0.1~20μm, 그리고 초기 깊이 ~1.2μm 범위의 질화막으로 둘러 쌓인 미세 채널 패터으로 제작한 후, HF용액에 의한 산화막의 식각속도를 관찰하였다. 실험 결과로써, 크기가 0.1 × 0.1 μ m2 초기 깊이가 1.2μm인 고종횡비(~12)의 초미세 패턴에서도 식각 속도가 일정함을 볼 수 있어서, 콘택 홀 패턴의 미세화에 관계없이 반응액의 침투가 원활하게 이루어짐을 알 수 있었다.