Nowadays, the study of CFRP reinforced with carbon fiber is focused on improving the the mechanical property. The study on the fracture data of CFRP are not properly made out than that of the general mechanical joint. In this study, the fracture property of mode 1 at the same condition of tensile experiment is investigated by applying the layer angle to laminated CFRP with the thickness of 15 mm. When the reaction forces until dropping out the bonded surface are compared with the cases of the layer angles of 0°, 45° and 60°, the reaction force is shown to be most and the elapsed time until dropping out the bonded surface is longest at that of 45°. The deformation energy is also shown to have the highest value by dropping out the adhesive interface. As the basis of the analysis result of this study, the most safety with fracture resistance is shown in the case of 45°. the bonded structure applying the appropriate layer angle is thought to have the structural safety.

Adhensively bonded joints in dissimilar materials have been widely applied in various engineering fields such as automobiles, space vehicle, semiconductor, vessel. To establish a fracture criterion and a reasonable strength evaluation method on adhensively interfaces in dissimilar materials, it is necessary to assess fracture parameters with various bonding conditions. In this paper, through stress analysis by using the 2-dimensional elastic boundary element method(BEM), the stress singularity factors on adhensively bonded joint in dissimilar materials were investigated quantitatively, and suggested the strength evaluation method by using fracture parameters

Britsh StandardBS 7991)에 명시된 DCB 시험편을 본 연구에 맞게 수정 후 두께 25mm, 35mm, 45mm, 55mm, 그리고 65mm의 DCB시험편을 제작하였다. 이 후 시험편을 Single-lap 방식으로 접착한 후 정적실험에서 도출된 최대 전단력을 각 시험편에 10Hz로 피로하중을 가하였다. 실험 결과값에 대한 수치해석적 검증을 하고자 상용 해석 프로그램인 ANSYS를 통해 실험과 동일한 시험편과 조건 하에 해석을 수행하였다. 접착력 해석을 하기 위해서 Mesh의 절점(node)들의 관계가 매우 중요하기 때문에 접착된 부분의 모든 절점들은 동일 선상에 있게 Mesh를 형성하였다. 실험 결과와 해석 결과를 비교해 본 결과 피로하중이 약 200cycle 반복되었을 때 최대 등가응력이 발생 하였고, 이때 전단방향으로 변위가 약 11mm 진전 된 것을 볼 수 있었다. 이후 4000cycle가량 피로하중이 반복 될 동안 변위는 일정하게 점점 증가한 후 피로하중이 약 4800cycle 반복 되었을 때 실험과 해석 데이터 모두 접착계면에서 완전한 전단 파괴가 일어난 것을 볼 수 있었다. 이때 변위는 약 20mm 진행 되었다. 해석을 통해 실험 데이터를 검증해 본 결과 두 결과 값은 완전 하게 같지는 않지만 유한요소법 해석 결과에 대한 신뢰를 확보 할 수 있었다. 이는 실제 구조물에 실험 없이 간단한 재료 물성치만으로도 해석을 통하여 구조적 안전성을 알아 볼 수 있는 한 방법이 될 수 있을 것이라고 사료된다.

3-D IC integration enables the smallest form factor and highest performance due to the shortest and most plentiful interconnects between chips. Direct metal bonding has several advantages over the solder-based bonding, including lower electrical resistivity, better electromigration resistance and more reduced interconnect RC delay, while high process temperature is one of the major bottlenecks of metal direct bonding because it can negatively influence device reliability and manufacturing yield. We performed quantitative analyses of the interfacial properties of Al-Al bonds with varying process parameters, bonding temperature, bonding time, and bonding environment. A 4-point bending method was used to measure the interfacial adhesion energy. The quantitative interfacial adhesion energy measured by a 4-point bending test shows 1.33, 2.25, and 6.44 J/m2 for 400, 450, and 500˚C, respectively, in a N2 atmosphere. Increasing the bonding time from 1 to 4 hrs enhanced the interfacial fracture toughness while the effects of forming gas were negligible, which were correlated to the bonding interface analysis results. XPS depth analysis results on the delaminated interfaces showed that the relative area fraction of aluminum oxide to the pure aluminum phase near the bonding surfaces match well the variations of interfacial adhesion energies with bonding process conditions.

Embedding of active devices in a printed circuit board has increasingly been adopted as a future electronic technology due to its promotion of high density, high speed and high performance. One responsible technology is to embedded active device into a dielectric substrate with a build-up process, for example a chipin-substrate (CiS) structure. In this study, desmear treatment was performed before Cu metallization on an FR-4 surface in order to improve interfacial adhesion between electroless-plated Cu and FR-4 substrate in Cu via structures in CiS systems. Surface analyses using atomic force microscopy and x-ray photoemission spectroscopy were systematically performed to understand the fundamental adhesion mechanism; results were correlated with peel strength measured by a 90o peel test. Interfacial bonding mechanism between electrolessplated Cu and FR-4 substrate seems to be dominated by a chemical bonding effect resulting from the selective activation of chemical bonding between carbon and oxygen through a rearrangement of C-C bonding rather than from a mechanical interlocking effect. In fact, desmear wet treatment could result in extensive degradation of FR-4 cohesive strength when compared to dry surface-treated Cu/FR-4 structures.

In the microelectronics packaging industry, the adhesion strength between Cu and polyimide and the thermal stability are very important factors, as they influence the performance and reliability of the device. The three different buffer layers of Cr, 50%Cr-50%Ni, and Ni were adopted in a Cu/buffer layer/polyimide system and compared in terms of their adhesion strength and thermal stability at a temperature of 300˚C for 24hrs. A 90-degree peel test and XPS analysis revealed that both the peel strength and thermal stability decreased in the order of the Cr, 50%Cr-50%Ni and Ni buffer layer. The XPS analysis revealed that Cu can diffuse through the thin Ni buffer layer (200Å), resulting in a decrease in the adhesion strength when the Cu/buffer layer/polyimide multilayer is heat-treated at a temperature of 300˚C for 24hrs. In contrast, Cu did not diffuse through the Cr buffer layer under the same heat-treatment conditions.

The effect of annealing treatment conditions on the interfacial adhesion energy between electrolessplated Ni film and polyimide substrate was evaluated using a 180˚ peel test. Measured peel strength values are 26.9±0.8, 22.4±0.8, 21.9±1.5, 23.1±1.3, 16.1±2.0 and 14.3±1.3g/mm for annealing treatment times during 0, 1, 3, 5, 10, and 20 hours, respectively, at 200˚C in ambient environment. XPS and AES analysis results on peeled surfaces clearly reveal that the peeling occurs cohesively inside polyimide. This implies a degradation of polyimide structure due to oxygen diffusion through interface between Ni and polyimide, which is also closely related to the decrease in the interfacial adhesion energy due to thermal treatment in ambient conditions.

1.5 μm-thick copper films deposited on silicon wafers were successfully bonded at 415˚C/25 kN for 40 minutes in a thermo-compression bonding method that did not involve a pre-cleaning or pre-annealing process. The original copper bonding interface disappeared and showed a homogeneous microstructure with few voids at the original bonding interface. Quantitative interfacial adhesion energies were greater than 10.4 J/m2 as measured via a four-point bending test. Post-bonding annealing at a temperature that was less than 300˚C had only a slight effect on the bonding energy, whereas an oxygen environment significantly deteriorated the bonding energy over 400˚C. This was most likely due to the fast growth of brittle interfacial oxides. Therefore, the annealing environment and temperature conditions greatly affect the interfacial bonding energy and reliability in Cu-Cu bonded wafer stacks.

The magnetron sputtering was used to deposit Ni buffer layers on the polyimide surfaces to increase the adhesion strength between Cu thin films and polyimide as well as to prevent Cu diffusion into the polyimide. The Ni layer thickness was varied from 100 to 400Å. The adhesion strength increased rather significantly up to 200Å of Ni thickness, however, there was no significant increase in strength over 200Å. The XPS analysis revealed that Ni thin films could increase the adhesion strength by reacting with the polar C=O bonds on the polyimide surface and also it could prevent Cu diffusion into the polyimide. The Cu/Ni/ polyimide multilayer thin films showed a high stability even at the high heating temperature of 200˚C, however, at the temperature of 300˚C, Cu diffused through the Ni buffer layer into polyimide, resulting in the drastic decrease in adhesion strength.

탄성 반도체 칩과 점탄성 접착제층의 계면에 존재하는 모서리 균열에 대한 응력확대계수를 조사하였다. 이러한 균열들은 자유 경계면 부근에 존재하는 응력 특이성으로 인해 발생할 수 있다. 계면 응력상태를 해석하기 위해서 시간 영역 경계요소법이 사용되었다. 작은 크기의 모서리 균열에 대한 응력확대계수가 계산되었다. 점탄성 이완으로 인해 응력확대계수의 크기는 시간이 경과함에 따라 작아진다.

본 연구에서 FPC에 사용되는 동박과 접착제의 이종 재료간에 계면접착력을 향상시키기 위해 silane primer를 도입하였다. 또한 동박표면 및 에폭시 접착제를 개질하여 개질조건이 접착강도에 미치는 영향도 조사하였다. 본 실험은 접착제층과의 상용성을 고려하여 silane primer로 triethoxyvinylsilane을 용액 및 무유화제 유화중합한 고분자형태와 3-aminopropyl-triethoxysilane (3-APTES), 3-glycidoxypropylmethoxysilane (3-GPTMS)을 사용하여 접착제층과의 접착력 증진을 도모하였다. 동박표면은 1,1,1-trichloroethane을 사용하여 개질 시간에 따른 동박 표면의 지형변화와 그에 따른 접착강도를 조사하였다. 결과에 따르면 silane을 사용한 경우 동박-접착제간의 접착력이 약2 ~ 5배 정도 증진되었고, 동박표면의 개질시간은 약 10분 정도가 최적의 접착조건임을 알 수 있었다. 또한 저분자량 실란의 농도에 따른 접착력은 3-APTES는 약 0.5 vol.%에서 최고 접착력을 보였고, 3-GPTMS의 경우 약 0.2 vol.%에서 최고의 접착력을 보였다.

Cu/EMC 계면 접착력에 미치는 산화의 규명하기 위해 리드프레임의 저온 산화에 대하여 조사하였다. 이전의 보고와 달리, 저온에서도 Cu2O위에 CuO산화물이 형성되어 Cu/Cu2O(NiO)/Cu(NiO)/air의 산화층 구조를 나타내었다. Cu/EMC 계면 접착력은 산화가 진행됨에 따라 산화 초기에 급격히 증가하다 최대값에 이르고, 이후의 계속적인 산화로 감소하는 양상을 보였다. 접착력은 산화 온도나 리드프레임의 종류보다 산화막의 두께에 밀접한 상관 관계를 나타내었다. 최대 계면 접착력이 얻어지는 산화막의 두께는 리드프레임의 종류보다 산화막의 두께에 밀접한 상관 관계를 나타내었다. 최대 계면 접착력이 얻어지는 산화막의 두께는 리드프레임의 종류와 무관하게 대략 20nm 와 30nm 사이에 존재하였다. 산화 초기의 접착력 증가는 산화로 인한 EMC에 대한 젖음성의 증가와 기계적 고착 효과의 증가에 기인하였다. 리드프레임과 EMC의 파괴 표면에 대한 AES, XPS 분석으로 부터, 산화막의 두께가 얇을 때에는 Cu2O//CuO의 계면 파괴 + EMC 자체 파괴가 복합적으로 발생함을 알 수 있었다. 반면에 과도한 산화로 낮을 접착력을 나타내는 시편은 Cu/Cu2/O 계면의 파괴를 나타냈다.