In this study, a multifunctional ophthalmic lens material with an electromagnetic shielding effect, high oxygen permeability, and high water content is tested, and its applicability is evaluated. Metal oxide nanoparticles are applied to the ophthalmic lens material for vision correction to shield harmful electromagnetic waves; the pyridine group is used to improve the antibacterial effect; and silicone substituted with urethane and acrylate is employed to increase the oxygen permeability and water content. In addition, multifunctional tinted ophthalmic lens materials are studied using lens materials with an excellent antibacterial effect (2,6-difluoropyridine, 2-fluoro-4-pyridinecarboxylic acid) and functional (UV protection, high wettability) lens materials (2,4-dihydroxy benzophenone, 2-hydroxy-4-(methacryloyloxy)benzophenone). To solve problems such as air bubbles generated during the polymerization process for the manufacturing and turbidity of the lens surface, polymerization conditions in which the defect rate is minimized are determined. The results show that the polymerization temperature and time are most appropriate when they are 110 oC and 40 minutes, respectively. The optimum injection amount of the polymerization solution is 350 ms. The turbid phenomenon that appears in lens processing is improved by 10 to 95% according to the test time and conditions.

We examined the characteristics of indium tin zinc oxide (ITZO) thin film transistors (TFTs) on polyimide (PI) substrates for next-generation flexible display application. In this study, the ITZO TFT was fabricated and analyzed with a SiOx/ SiNx gate insulator deposited using plasma enhanced chemical vapor deposition (PECVD) below 350℃. X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) results revealed that the oxygen vacancies and impurities such as H, OH and H2O increased at ITZO/gate insulator interface. Our study suggests that the hydrogen related impurities existing in the PI and gate insulator were diffused into the channel during the fabrication process. We demonstrate that these impurities and oxygen vacancies in the ITZO channel/gate insulator may cause degradation of the electrical characteristics and bias stability. Therefore, in order to realize high performance oxide TFTs for flexible displays, it is necessary to develop a buffer layer (e.g., Al2O3) that can sufficiently prevent the diffusion of impurities into the channel.

The micron-sized indium zinc tin oxide (IZTO) particles were prepared by spray pyrolysis from aqueous precursor solution for indium, zinc, and tin and organic additives such as citric acid (CA) and ethylene glycol (EG) were added to aqueous precursor solution for indium, zinc, and tin. The obtained IZTO particles prepared by spray pyrolysis from the aqueous solution without organic additives had spherical and filled morphologies, whereas the IZTO particles obtained with organic additives had more hollow and porous morphologies. The micron-sized IZTO particles with organic additives were changed fully to nano-sized IZTO particles, whereas the micron-sized IZTO particles without organic additives were not changed fully to nano-sized IZTO particle after post-treatment at 700 °C for 2 hours and wet-ball milling for 24 hours. Surface resistances of micron-sized IZTO’s before post-heat treatment and wet-ball milling were much higher than those of nano-sized IZTO’s after post-heat treatment and wet-ball milling. From IZTO with composition of 80 wt. % In2O3, 10 wt. % ZnO, and 10 wt. % SnO2 which showed a smallest surface resistance IZTO after post-heat treatment and wet-ball milling, thin films were deposited on glass substrates by pulsed DC magnetron sputtering, and the electrical and optical properties were investigated.

마이크론 크기를 가지는 ITO(indium tin oxide) 입자들은 인듐과 틴의 수용성 전구체들과 유기 첨가제를 분무 열분해하여 얻었다. 유기 첨가제로서는 에틸렌글리콜과 시트르산을 이용하였다. 분무 열분해 시 에틸렌글리콜과 시트르산과 같은 유기첨가제를 첨가하지 않고 얻어진 ITO 입자들은 구형이며 속이 꽉찬 형태를 가지는데 비해 유기 첨가제를 첨가하여 분무 열분해를 하면 얻어지는 ITO 입자들은 유기 첨가제의 양이 증가 할수록 껍질이 얇고 다공성이 증대된 중공 입자가 얻어진다. 유기첨가제를 첨가하지 않고 분무 열분해를 통해 얻어지는 마이크론 크기를 가지는 ITO는 700℃에서 두 시간 동안의 후소성과 24 시간동안의 습식 볼밀링에 의해 나노 크기의 ITO로 전환되지 않으나, 유기첨가제를 첨가하고 분무 열분해를 통해 얻어지는 마이크론 크기를 가지는 ITO는 700℃에서 두 시간 동안의 후소성과 24 시간 동안의 습식 볼밀링에 의해 나노 크기의 ITO로 쉽게 전환되었다. 응집된 나노 크기의 ITO의 일차 입자의 크기를 Debye-Scherrer 식에 의해 계산하였고 ITO 입자를 압축하여 만든 펠렛의 표면저항을 측정하였다.

In this paper, we studied a p-type reflector based on indium tin oxide (ITO) for vertical-type ultraviolet light-emitting diodes (UV LEDs). We investigated the reflectance properties with different deposition methods. An ITO layer with a thickness of 50 nm was deposited by two different methods, sputtering and e-beam evaporation. From the measurement of the optical reflection, we obtained 70% reflectance at a wavelength of 382 nm by means of sputtering, while only 30% reflectance resulted when using the e-beam evaporation method. Also, the light output power of a 1mm×1mm vertical chip created with the sputtering method recorded a twofold increase over a chip created with e-beam evaporation method. From the measurement of the root mean square (RMS), we obtained a RMS value 1.3 nm for the ITO layer using the sputtering method, while this value was 5.6 nm for the ITO layer when using the e-beam evaporation method. These decreases in the reflectance and light output power when using the e-beam evaporation method are thought to stem from the rough surface morphology of the ITO layer, which leads to diffused reflection and the absorption of light. However, the turn-on voltage and operation voltage of the two samples showed identical results of 2.42 V and 3.5 V, respectively. Given these results, we conclude that the two ITO layers created by different deposition methods showed no differences in the electric properties of the ohmic contact and series resistance.

In this study, we demonstrated a simple and eco-friendly method, including mechanical polishing and attrition milling processes, to recycle sputtered indium tin oxide targets to indium tin oxide nanopowders and targets for sputtered transparent conductive films. The utilized indium tin oxide target was first pulverized to a powder of sub- to a few- micrometer size by polishing using a diamond particle coated polishing wheel. The calcination of the crushed indium tin oxide powder was carried out at 1000˚C for 1 h, based on the thermal behavior of the indium tin oxide powder; then, the powders were downsized to nanometer size by attrition milling. The average particle size of the indium tin oxide nanopowder was decreased by increasing attrition milling time and was approximately 30 nm after attrition milling for 15 h. The morphology, chemical composition, and microstructure of the recycled indium tin oxide nanopowder were investigated by FE-SEM, EDX, and TEM. A fully dense indium tin oxide sintered specimen with 97.4% of relative density was fabricated using the recycled indium tin oxide nanopowders under atmospheric pressure at 1500˚C for 4 h. The microstructure, phase, and purity of the indium tin oxide target were examined by FE-SEM, XRD, and ICP-MS.

The objectives of this study were the development of a synthesis technique for highly active nanosized ITO powder and the understanding of the reaction mechanisms of the ITO precursors. The precipitation and agglomeration phenomena in ITO and precursors are very sensitive to reaction temperature, pH, and coexisting ion species. Excessive ion and ions had a negative effect an synthesizing highly active powders. However, with a relevant stabilizing treatment the shape and size of ITO and precursors could be controlled and high density sintered products of ITO were obtained. By applying the reprecipitation process (or stabilization technique), highly active ITO and powders were synthesized. Sintering these powders at for 5 hours produced 97% dense ITO bodies.

We present the structural, optical, and electrical properties of amorphous silicon suboxide (a-SiOx) films grown on indium tin oxide glass substrates with a radio frequency magnetron technique from a polycrystalline silicon oxide target using ambient Ar. For different substrate-target distances (d = 8 cm and 10 cm), the deposition temperature effects were systematically studied. For d = 8cm, oxygen content in a-SiOx decreased with dissociation of oxygen onto the silicon oxide matrix; temperature increased due to enlargement of kinetic energy. For d = 10 cm, however, the oxygen content had a minimum between 150˚ and 200˚. Using simple optical measurements, we can predict a preferred orientation of liquid crystal molecules on a-SiOx thin film. At higher oxygen content (x > 1.6), liquid crystal molecules on an inorganic liquid crystal alignment layer of a-SiOx showed homogeneous alignment; however, in the lower case (x< 1.6), liquid crystals showed homeotropic alignment.

In order to fabricate a high density sintered body of ITO, nano-sized ITO powders were synthesized by coprecipitation methods. Aqueous solutions of indium and tin salts were mixed and coprecipitated by changing their pH. Coprecipitated ITO powders possessed 20-30 nm crystallite size and a relatively high BET value however, aggregation of particles were occurred. Therefore, a novel recrystallization technique was applied in order to eliminate the aggregates. The recrystallized ITO material consists of a little bit larger needlelike crystals, , and it possesses a higher BET value compared to the plain coprecipitated material . Metastable phase formation and higher content of aggregated particles were observed in the coprecipitated materials. Densification was complete after 5 hour sintering at for the recrystallized powders while densities of the coprecipitated powders were below

투명차폐재를 목적으로 Indium Tin Oxide (ITO) 투광성 박막을 제조하고 전자파 차폐특성에 대해 조사하였다. 박막은 RF magnetron co-sputtering 증착장비를 사용하여 제작하였다. RF 인가전력, Ar 및 O2분압, 기판온도를 변화시키며 전기전도도와 투광성을 겸비한 박막의 조성과 구조에 관한 실험을 진행하였다. 최적의 증착조건은 300˚C의 기판온도, 20sccm의 아르곤 유량, 10sccm의 산소유량, 그리고 In과 Sn의 인가전력이 각각 50W와 30W일 경우였으며, 이때 얻어진 박막은 육안으로 분명할 정도의 투광성을 보였고 5.6×104mho/m의 높은 전기전도도를 나타내었다. 이렇게 제조된 ITO 박막의 전자파 차폐효과를 차폐이론에 의해 분석하였다. 박막의 전기전도도, 두께, skin depth로부터 차폐기구(흡수손실, 반사손실, 다중반사 보정항)에 대해 고찰하였다. 계산된 차폐효과는 26dB의 값을 보여 투광성 차폐재로 ITO 박막의 사용 가능성을 제시할 수 있었다.