본 연구에서는 공정 간소화, 균일한 나노 입자 형성, 백금 저감 및 활용도를 높이기 위하여 원자층 증착법 (Atomic Layer Deposition, ALD)을 통하여 양이온 교환막 연료전지용 촉매를 제조하고 증착 온도에 따른 백금 입자 형성 거동 을 확인하였다. 증착 온도는 250 °C, 300 °C, 350 °C로 조절하여 백금 촉매를 형성하였으며 각 각의 촉매의 증착 양 상을 확인하기 위하여 Thermogravimetric analysis, X-ray diffraction 및 Transmission electron microscopy를 도입하여 담지량, 백금 입자 분포, 크기 및 결정구조 등을 확인하였다. 합성된 백금 촉매를 연료전지에 적용하기 위해서 Cyclic Voltammetry 기법을 통해서 전기화학적 활성 표면적를 구하고, Membrane Electrode Assembly 셀을 제작하여 전지 특성을 확보하였다. 최종적으로, 백금 촉매 제조 시 ALD 증착 온도는 300 °C 이하에서 합성해야 됨을 밝혀냈으며, ALD으로 제작된 백금 촉매가 기존 습식 촉매보다 더 우수한 특성을 보임을 확인하였다. 해당 연구는 ALD을 통하여 다양한 접근법으로 촉매를 제조할 시, 기본적인 ALD 공정 정보 및 ALD 촉매 합성 방향성을 제공할 수 있다.

In this study, we investigate the effect of the diffusion barrier and substrate temperature on the length of carbon nanotubes. For synthesizing vertically aligned carbon nanotubes, thermal chemical vapor deposition is used and a substrate with a catalytic layer and a buffer layer is prepared using an e-beam evaporator. The length of the carbon nanotubes synthesized on the catalytic layer/diffusion barrier on the silicon substrate is longer than that without a diffusion barrier because the diffusion barrier prevents generation of silicon carbide from the diffusion of carbon atoms into the silicon substrate. The deposition temperature of the catalyst and alumina are varied from room temperature to 150°C, 200°C, and 250°C. On increasing the substrate temperature on depositing the buffer layer on the silicon substrate, shorter carbon nanotubes are obtained owing to the increased bonding force between the buffer layer and silicon substrate. The reason why different lengths of carbon nanotubes are obtained is that the higher bonding force between the buffer layer and the substrate layer prevents uniformity of catalytic islands for synthesizing carbon nanotubes.

To establish low-temperature process conditions, process-property correlation has been investigated for Ga-doped ZnO (GZO) thin films deposited by pulsed DC magnetron sputtering. Thickness of GZO films and deposition temperature were varied from 50 to 500 nm and from room temperature to 250 oC, respectively. Electrical properties of the GZO films initially improved with increase of temperature to 150 oC, but deteriorated subsequently with further increase of the temperature. At lower temperatures, the electrical properties improved with increasing thickness; however, at higher temperatures, increasing thickness resulted in deteriorated electrical properties. Such changes in electrical properties were correlated to the microstructural evolution, which is dependent on the deposition temperature and the film thickness. While the GZO films had c-axis preferred orientation due to preferred nucleation, structural disordering with increasing deposition temperature and film thickness promoted grain growth with a-axis orientation. Consequently, it was possible to obtain a good electrical property at relatively low deposition temperature with small thickness.

Silicon carbide(SiC) layer is particularly important tri-isotropic (TRISO) coating layers because it acts as a miniature pressure vessel and a diffusion barrier to gaseous and metallic fission products in the TRISO coated particle. The high temperature deposition of SiC layer normally performed at 1500-1650˚C has a negative effect on the property of IPyC layer by increasing its anisotropy. To investigate the feasibility of lower temperature SiC deposition, the influence of deposition temperature on the property of SiC layer are examined in this study. While the SiC layer coated at 1500˚C obtains nearly stoichiometric composition, the composition of the SiC layer coated at 1300-1400˚C shows discrepancy from stoichiometric ratio(1:1). 3-7μm grain size of SiC layer coated at 1500˚C is decreased to sub-micrometer (＜ 1μm) -2μm grain size when coated at 1400˚C, and further decreased to nano grain size when coated at 1300-1350˚C. Moreover, the high density of SiC layer (≥3.19g/cm3) which is easily obtained at 1500˚C coating is difficult to achieve at lower temperature owing to nano size pores. the density is remarkably decreased with decreasing SiC deposition temperature.

The electrical and optical properties of fluorine-doped tin oxide films grown on polyethylene terephthalate film witha hardness of 3 using electron cyclotron resonance plasma with linear microwave of 2.45GHz of high ionization energy wereinvestigated. Fluorine-doped tin oxide films with a magnetic field of 875 Gauss and the highest resistance uniformity wereobtained. In particular, the magnetic field could be controlled by varying the distribution in electron cyclotron depositionpositions. The films were deposited at various gas flow rates of hydrogen and carrier gas of an organometallic source. Thesurface morphology, electrical resistivity, transmittance, and color in the visible range of the deposited film were examined usingSEM, a four-point probe instrument, and a spectrophotometer. The electromagnetic field for electron cyclotron resonancecondition was uniformly formed in at a position 16cm from the center along the Z-axis. The plasma spatial distribution ofmagnetic current on the roll substrate surface in the film was considerably affected by the electron cyclotron systems. Therelative resistance uniformity of electrical properties was obtained in film prepared with a magnetic field in the current rangeof 180~200A. SEM images showing the surface morphologies of a film deposited on PET with a width of 50cm revealedthat the grains were uniformly distributed with sizes in the range of 2~7nm. In our experimental range, the electrical resistivityof film was able to observe from 1.0×10−2 to 1.0×10−1Ωcm where optical transmittance at 550nm was 87~89%. Theseproperties were depended on the flow rate of the gas, hydrogen and carrier gas of the organometallic source, respectively.

We have investigated the structural and optical properties of Ga-doped ZnO (GZO) thin films deposited by RFmagnetron sputtering at various deposition temperatures from 100 to 500oC. All the GZO thin films are grown as a hexagonalwurtzite phase with highly c-axis preferred parameter. The structural and electrical properties are strongly related to depositiontemperature. The grain size increases with the increasing deposition temperature up to 400oC and then decreases at 500oC. Thedependence of grain size on the deposition temperature results from the variation of thermal activation energy. The resistivityof GZO thin film decreases with the increasing deposition temperature up to 300oC and then decreases up to 500oC. GZO thinfilm shows the lowest resistivity of 4.3×10−4Ωcm and highest electron concentration of 1.0×1021cm−3 at 300oC. The mobilityof GZO thin films increases with the increasing deposition temperature up to 400oC and then decreases at 500oC. GZO thinfilm shows the highest resistivity of 14.1cm2/Vs. The transmittance of GZO thin films in the visible range is above 87% atall the deposition temperatures. GZO is a feasible transparent electrode for the application to the transparent electrode of thinfilm solar cells.

We present the structural, optical, and electrical properties of amorphous silicon suboxide (a-SiOx) films grown on indium tin oxide glass substrates with a radio frequency magnetron technique from a polycrystalline silicon oxide target using ambient Ar. For different substrate-target distances (d = 8 cm and 10 cm), the deposition temperature effects were systematically studied. For d = 8cm, oxygen content in a-SiOx decreased with dissociation of oxygen onto the silicon oxide matrix; temperature increased due to enlargement of kinetic energy. For d = 10 cm, however, the oxygen content had a minimum between 150˚ and 200˚. Using simple optical measurements, we can predict a preferred orientation of liquid crystal molecules on a-SiOx thin film. At higher oxygen content (x > 1.6), liquid crystal molecules on an inorganic liquid crystal alignment layer of a-SiOx showed homogeneous alignment; however, in the lower case (x< 1.6), liquid crystals showed homeotropic alignment.

The effects of the deposition and annealing temperature on the structural, electrical and opticalproperties of Ag doped ZnO (ZnO:Ag) thin films were investigated. All of the films were deposited with a 2wt%Ag2O-doped ZnO target using an e-beam evaporator. The substrate temperature varied from room temperature(RT) to 250oC. An undoped ZnO thin film was also fabricated at 150oC as a reference. The as-grown films wereannealed in temperatures ranging from 350 to 650oC for 5h in air. The Ag content in the film decreased asthe deposition and the post-annealing temperature increased due to the evaporation of the Ag in the film.During the annealing process, grain growth occurred, as confirmed from XRD and SEM results. The as-grownfilm deposited at RT showed n-type conduction; however, the films deposited at higher temperatures showedp-type conduction. The films fabricated at 150oC revealed the highest hole concentration of 3.98×1019cm-3 anda resistivity of 0.347Ω·cm. The RT PL spectra of the as-grown ZnO:Ag films exhibited very weak emissionintensity compared to undoped ZnO; moreover, the emission intensities became stronger as the annealingtemperature increased with two main emission bands of near band-edge UV and defect-related greenluminescence exhibited. The film deposited at 150oC and annealed at 350oC exhibited the lowest value of Ivis/Iuv of 0.05.

고준위폐기물을 지하 500m의 화강암 암반의 처분장에 장기간(약 10,000년 동안) 처분 시 폐기물에서 발생하는 열에 의하여 처분용기 및 처분용기를 감싸고 있는 주위 구조물(벤토나이트 버퍼, 암반 등)의 처분시간 경과에 따른 온포분포 변화를 알아내는 것은 처분장 설계를 위하여 매우 중요하다. 본 논문에서는 수치해석기법을 이용하여 고준위폐기물에서 발생하는 열에 의한 처분용기 및 벤토나이트 버퍼, 처분동굴을 포함하는 복합구조물의 온도분포 변화를 구하였다. 특히 처분 후 500년의 처분시간 경과에 따른 복합구조물의 온도분포 해석을 수행하여 온도분포 변화를 구하였다. 시간에 따른 온도분포 변화에 대한 해석결과를 분석한 결과 처분장 각 구성부분별로 차이는 있으나 처분초기부터 구성부분별로 각각 다르게 온도가 증가하는데 가장 늦은 부분은 150년까지 완만하게 온도가 증가하다가 그 이후에는 온도가 서서히 감소하는 것으로 나타났다.

Pt 상부 전극 증착온도가 Pb(Zr,Ti)O3(PZT) 박막의 전기적 특성에 미치는 영향에 대하여 연구하였다. Pt 상부 전극을 200˚C이상의 고온에서 증착하는 경우, Pt 전극의 하부에 위치한 PZT 박막은 강유전 특성이 심하게 저하되었으나, Pt 전극이 증착되지 않았던 부분은 강유전 특성이 저하되지 않았다. 이와 같은 현상이 발생된 것은 진공 chamber 내의 수증기가 Pt 상부전극의 촉매 작용에 의해 수소 원자로 분해되고, 이 분해된 수소 원자가 고온에서 Pt 하부의 PZT 박막 내로 확산해 들어가 PZT박막에 산소 공공을 만들어 내기 때문이다. Pt의 촉매 작용이 없이는 수증기의 수소 원자로의 분해가 어려우므로 Pt 전극이 덮여져 있지 않는 PZT 박막은 강유전 특성이 저하되지 않는다. 이러한 강유전 특성의 저하는 산소 분위기의 RTA(rapid thermal annealing)처리에 의해 회복이 되었다. 한편, 누설전류 특성은 Pt 상부 전극의 증착온도가 증가함에 따라 향상되는 특성을 보였다.

화염가수분해증착법에 의해 형성된 0.1μm크기의 soot를 실리콘 기판위에 형성하여 1325˚C에서 2시간 동안 고밀화과정후 투명한 후막을 얻을 수 있었다. 고밀화 열처리는 탈수과정, 재배열 과정, 그리고 고밀화 과정으로 구성되었다. 고밀화 공정후의 두께 수축률은 초기 soot의 96%정도였으며, 급속한 두께의 감소는 950˚C부터 시작되었으며, 본격적인 고밀화가 시작되는 온도는 1250˚C임을 알 수 있었다. soot의 TGA와 DTA를 이용한 열분석 결과 탈수과정에 의하여 9/wt%의 질량감소와 1250˚C이상에서 인(P)의 증발에 의한 2wt%의 질량감소를 관찰하였다. DTA곡선에서는 500˚C, 570˚C. 1258˚C에서 흡열반응 피크를 나타내는데, 이는 B2O3, P2O5 등의 도펀트들의 melting과 실리카 입자사이의 기공이 소멸되면서 입자간의 열전도도의 증가에 의해 나타난 것으로 판단된다.

Multitarget bias cosputter deposition(MBCD)에 의해 저온(200˚C)에서 NaCI(100)상에 정합CoSi2를 성장시켰다. X-선회절과 투과전자현미경에 의해 증착온도와 기판 bias전압에 따른 각각 silicide의 상전이와 결정성을 관찰하였다. Metal induced crystallization(MIC) 과 self bias 효과에 의해 200˚C에서 기판전압을 인가하지 않은 경우에도 결정질 Si이 성장하였다. MIC현상을 이론 및 실험적으로 고찰하였다. 관찰된 상전이는 Co2Si → CoSi → Cosi2로서 유효생성열법칙에 의해 예측된 상전이와 일치하였다. 기판 bias전압 인가시 발생한 이온충돌에 의한 충돌연쇄혼합(collisional cascade mixing), 성장박막 표면의 in situ cleaning, 핵생성처(nucleation site)이 증가로 인하여 상전이, CoSi(111)우선방위, 결정성은 증착온도에 비해 기판bias전압에 더 큰 영향을 받았다. 200˚C에서 기판 bias전압을 증가시킴에 따라 이온충돌에 의한 결정입성장이 관찰되었으며, 이를 이온충독파괴(ion bombardment dissociation)모델에 의해 해석하였다. 200˚C에서의 기판 bias전압증가에 따른 결정성변화를 정량적으로 고찰하기 위해 Langmuir탐침을 이용하여 EAr, α(Vs)를 계산하였다.