Mn-substituted BiFeO3(BFO) thin films were prepared by r.f. magnetron sputtering under an Ar/O2mixture of various deposition pressures at room temperature. The effects of the deposition pressure andannealing temperature on the crystallization and electrical properties of BFO films were investigated. X-raydiffraction patterns revealed that BFO films were crystallized for films annealed above 500oC. BFO filmsannealed at 550oC for 5 min in N2 atmosphere exhibited the crystallized perovskite phase. The (Fe+Mn)/Biratio decreased with an increase in the deposition pressure due to the difference of sputtering yield. The grainsize and surface roughness of films increased with an increase in the deposition pressure. The dielectricconstant of BFO films prepared at various conditions shows 127~187at 1kHz. The leakage current densityof BFO films annealed at 500oC was approximately two orders of magnitude lower than that of 550oC. Theleakage current density of the BFO films deposited at 10~30m Torr was about 5×10-6~3×10-2A/cm2 at 100kV/cm. Due to the high leakage current, saturated P-E curves were not obtained in BFO films. BFO film annealedat 500oC exhibited remnant polarization(2Pr) of 26.4µC/cm2 at 470kV/cm.

Changes in the surface morphology and light scattering of textured Al doped ZnO thin films on glasssubstrates prepared by rf magnetron sputtering were investigated. As-deposited ZnO:Al films show a hightransmittance of above 80% in the visible range and a low electrical resistivity of 4.5×10-4Ω·cm. The surfacemorphology of textured ZnO:Al films are closely dependent on the deposition parameters of heater temperature,working pressure, and etching time in the etching process. The optimized surface morphology with a cratershape is obtained at a heater temperature of 350oC, working pressure of 0.5 mtorr, and etching time of 45seconds. The optical properties of light transmittance, haze, and angular distribution function (ADF) aresignificantly affected by the resulting surface morphologies of textured films. The film surfaces, havinguniformly size-distributed craters, represent good light scattering properties of high haze and ADF values.Compared with commercial Asahi U (SnO2:F) substrates, the suitability of textured ZnO:Al films as frontelectrode material for amorphous silicon thin film solar cells is also estimated with respect to electrical andoptical properties.

SnxSe100-X (15|X|30) alloys have been studied to explore their suitability as phase change materials for nonvolatile memory applications. The phase change characteristics of thin films prepared by a Radio Frequency (RF) magnetron co-sputtering system were analyzed by an X-ray diffractometer and 4-point probe measurement. A phase change static tester was also used to determine their crystallization under the pulsed laser irradiation. X-ray diffraction measurements show that the transition in sheet resistance is accompanied by crystallization. The amorphous state showed sheet resistances five orders of magnitude higher than that of the crystalline state in SnxSe100-X (x = 15, 20, 25, 30) films. In the optimum composition, the minimum time of SnxSe100-X alloys for crystallization was 160, 140, 150, and 30ns at 15mW, respectively. The crystallization temperature and the minimum time for crystallization of thin films were increased by increasing the amount of Sn, which is correlated with the activation energy for crystallization.

In this report, the structural and optical properties of sol-gel derived MgxZn1-xO thin films upon changes in the composition and annealing temperature were investigated. The Mg2+ content and the annealing temperature were varied in the range of 0≤x≤0.35 and 400˚C≤T≤600˚C, respectively. The films exhibited a hexagonal wurtzite structure of a polycrystalline nature. The optical transmittance exceeded 85% and the optical band gap of the film was tuned as high as 3.84 eV at a value of x = 0.35 (annealed at 400˚C), which was evidently the maximum Mg2+ content for the single-phase polycrystalline MgxZn1-xO thin films prepared in this experiment. The optical band gap and photoluminescence emission were tailored to the higher energy side while maintaining crystallinity without a significant change of the lattice constant.

Behaviors of saturated fatty acid halides (CI4, C16, C18) were measured by LB method when the molecules were stimulated by pressure. The saturated fatty acid halides were deposited on the indium tin oxide(lTO) glass by the LB method. The average organic ultra thin film size and the surface roughness of the fatty acid halides thin films were investigated using AFM. It was found that AFM images show small surface roughness (2.5~5.0 nm) and the organic ultra thin film size of 2.5~12 nm. Both aggregations and pin-holes were also seen on the AFM images. However we found that the surface roughness. These effects seem to be reasonable to be related to the increase of the organic ultra thin film size of fatty acid halides.

Transparent Sn-doped In2O3 (ITO) single-layer and ITO/Au/ITO multilayer films were deposited onglass substrates by reactive magnetron sputtering to compare the properties of the films. They were thenannealed in a vacuum of 1×10-2 Pa at temperatures ranging from 150 to 450oC for 20 min to determinethe effect of the annealing temperature on the properties of the films. As-deposited 100nm thick ITO filmsexhibit a sheet resistance of 130Ω/□ and optical transmittance of 77% at a wavelength length of 550nm. Byinserting a 5nm-thick Au layer in ITO/metal/ITO (IMI) films, the sheet resistance was decreased to as lowas 20Ω/□ and the optical transmittance was decreased to as little as 73% at 550nm. Post-deposition annealingof ITO/Au/ITO films led to considerably lower electrical resistivity and higher optical transparency. In the X-ray diffraction pattern, as-deposited ITO films did not show any diffraction peak, whereas as-deposited ITO/Au/ITO films have Au (222) and In2O3 (110) crystal planes. When the annealing temperature reached the 150- 450oC range, the both diffraction peak intensities increased significantly. A sheet resistance of 8Ω/□ and anoptical transmittance of 82% were obtained from the ITO/Au/ITO films annealed at 450oC.

The effect of annealing under argon atmosphere on hydrogenated amorphous silicon (a-Si:H) thin films deposited at room temperature and 300˚C using Radio Frequency (RF) magnetron sputtering has been investigated. For the films deposited at room temperature, there was not any increase in hydrogen content and optical band gap of the films, and as a result, quality of the films was not improved under any annealing conditions. For the films deposited at 300˚C, on the other hand, significant increases in hydrogen content and optical band gap were observed, whereas values of microstructure parameter and dark conductivity were decreased upon annealing below 300˚C. In this study, it was proposed that the Si-HX bonding strength is closely related to deposition temperature. Also, the improvement in optical, electrical and structural properties of the films deposited at 300˚C was originated from thermally activated hydrogen bubbles, which were initially trapped at microvoids in the films.

Nano-crystalline hydroxyapatite (HAp) films were formed at the Ti surface by a single-step microarc oxidation (MAO), and HAp-zirconia composite (HZC) films were obtained by subsequent chemical vapor deposition (CVD) of zirconia onto the HAp. Through the CVD process, zero- and one-dimensional zirconia nanostructures having tetragonal crystallinity (t-ZrO2) were uniformly distributed and well incorporated into the HAp crystal matrix to form nanoscale composites. In particular, (t-ZrO2) was synthesized at a very low temperature. The HZC films did not show secondary phases such as tricalcium phosphate (TCP) and tetracalcium phosphate (TTCP) at relatively high temperatures. The most likely mechanism for the formation of the t-ZrO2 and the pure HAp at the low processing temperature was proposed to be the diffusion of Ca2+ ions. The HZC films showed increasing micro-Vickers hardness values with increases in the t-ZrO2 content. The morphological features and phase compositions of the HZC films showed strong dependence on the time and temperature of the CVD process. Furthermore, they showed enhanced cell proliferation compared to the TiO2 and HAp films most likely due to the surface structure change.

Modified thermal annealing was applied to the activation of the polycrystalline silicon films doped as p-type through implantation of B2H6. The statistical design of experiments was successfully employed to investigate the effect of rapid thermal annealing on activation of polycrystalline Si doped as p-type. In this design, the input variables are furnace temperature, power of halogen lamps, and alternating magnetic field. The degree of ion activation was evaluated as a function of processing variables, using Hall effect measurements and Raman spectroscopy. The main effects were estimated to be furnace temperature and RTA power in increasing conductivity, explained by recrystallization of doped ions and change of an amorphous Si into a crystalline Si lattice. The ion activation using rapid thermal annealing is proven to be a highly efficient process in low temperature polycrystalline Si technology.

We fabricated 10 nm-TiO2 thin films for DSSC (dye sensitized solar cell) electrode application using ALD (atomic layer deposition) method at the low temperatures of 150˚ and 250˚. We characterized the crosssectional microstructure, phase, chemical binding energy, and absorption of the TiO2 using TEM, HRXRD, XPS, and UV-VIS-NIR, respectively. TEM analysis showed a 10 nm-thick flat and uniform TiO2 thin film regardless of the deposition temperatures. Through XPS analysis, it was found that the stoichiometric TiO2 phase was formed and confirmed by measuring main characteristic peaks of Ti 2p1, Ti 2p3, and O 1s indicating the binding energy status. Through UV-VIS-NIR analysis, ALD-TiO2 thin films were found to have a band gap of 3.4 eV resulting in the absorption edges at 360 nm, while the conventional TiO2 films had a band gap of 3.0 eV (rutile)~3.2 eV (anatase) with the absorption edges at 380 nm and 410 nm. Our results implied that the newly proposed nano-thick TiO2 film using an ALD process at 150˚ had almost the same properties as thsose of film at 250˚. Therefore, we confirmed that the ALD-processed TiO2 thin film with nano-thickness formed at low temperatures might be suitable for the electrode process of flexible devices.

Cellulose nanofibers from microfibril cellulose (MFC) was prepared by hydrobromic acid (HBr) treatment at different concentrations. Polyvinyl alcohol (PVA) composite films at various loading level of nanofibers were manufactured by a film casting method. The analysis of degree of polymerization (DP), crystallinity (Xc) and molecular weight (Mw) of cellulose after acid treatment was conducted. The mechanical and thermal properties of the cellulose nanofibers reinforced PVA films were characterized using tensile tests and thermogravimetric analysis (TGA). The DP and Mw of MFC by HBr hydrolysis considerably decreased, but Xc showed no significant change. After acid hydrolysis, the diameter of cellulose nanofibers was in the range of 100 to 200 nm. The thermal stability of the films was steadily improved with the increase of nanofiber loading. There was a significant increase in the tensile strength of PVA composite films with the increase in MFC loading. Finally, 5 wt.% nanofiber loading exhibited the highest tensile strength and thermal stability of PVA composite films.

본 연구에서는 poly(acrylonitrile-butadiene-styrene) (ABS)에 carbon graphite와 zeolite 4A를 첨가하여 복합 필름을 제조하고 공기와 수증기 투과 특성을 살펴보았다. 복합 필름의 경우 모든 경우에서 순수한 ABS에 비해서 산소와 질소의 투과도가 감소하였으며, 산소의 투과도 감소가 질소의 투과도 감소보다 약간 큰 관계로 산소/질소 선택도도 조금 감소하였다. 또한, 수증기 투과도도 순수한 ABS에 비해서 약 1/2로 감소하였다. 이러한 투과도의 감소는 ABS에 filler를 첨가함으로 인하여 물질 확산 경로의 tortuosity가 증가했기 때문인 것으로 생각된다.

The effects of an addition of ZrO2 on the microstructure and electrical properties of MgO films as a protective layer for AC plasma display panels were investigated. MgO + a 200 ppm ZrO2 protective layer prepared by e-beam evaporation exhibited a secondary electron emission coefficient (γ) that was improved by 21% compared to that of a pure MgO protective layer. The relative density and Vickers hardness increased with a further addition of ZrO2. These results suggest that the discharge properties and optical properties of MgO protective layers are closely related to the relative density and Vickers hardness. The good optical and electrical properties of γ, at 0.080, a grain size of 19 μm and an optical transmittance of 91.93 % were obtained for the MgO + 200 ppm ZrO2 protective layer sintered at 1700˚C for 5 hrs.

Ba(Ti,Sn)O3 thin films, for use as dielectrics for MLCCs, were grown from Sn doped BaTiO3 sourcesby e-beam evaporation. The crystalline phase, microstructure, dielectric and electrical properties of films wereinvestigated as a function of the (Ti＋Sn)/Ba ratio. When BaTiO3 sources doped with 20~50mol% of Sn wereevaporated, BaSnO3films were grown due to the higher vapor pressure of Ba and Sn than of Ti. However, itwas possible to grow the Ba(Ti,Sn)O3 thin films with ≤15mol% of Sn by co-evaporation of BTS and Ti metalsources. The (Ti＋Sn)/Ba and Sn/Ti ratio affected the microstructure and surface roughness of films and thedielectric constant increased with increasing Sn content. The dielectric constant and dissipation factor ofBa(Ti,Sn)O3 thin films with ≤15mol% of Sn showed the range of 120 to 160 and 2.5~5.5% at 1KHz,respectively. The leakage current density of films was order of the 10−9~10−8A/cm2 at 300KV/cm. The researchresults showed that it was feasible to grow the Ba(Ti,Sn)O3 thin films as dielectrics for MLCCs by an e-beamevaporation technique.

지하수나 폐수 등에 포함된 독성을 가진 음이온류나 양이온류 등의 유독물질을 경제적으로 처리하는데 탁월한 분리기능을 가진 것으로 알려진 전기투석공정에 사용하기 위해 음이온 교환 복합막을 제조하여 그 전기화학적인 특성을 조사하였다. 다양한 조성의 vinylbenzylchloride (VBC)와 divinylbenzene (DVB) 그리고 α,α-azobis(isobutyronitrile) (AIBN)으로 이루어진 단량체 용액에 다공성 지지체인 poly(ethylene) (PE)을 함침한 후 열중합 가교시켜 poly(VBC-DVB)/PE 복합막을 생성한 다음 trimethylamine(TMA)과 acetone을 이용해 음이온 교환기(-N + (CH3)3)를 함유하는 복합막을 제조하였다. 음이온 교환막 제조시 VBC/DVB의 비율과 TMA/Acetone의 비율에 따른 막의 함수율, 이온교환용량(IEC) 및 전기저항을 조사하였다. 그 결과 제조된 막들은 사용된 PE지지체의 얇은 막두께에 기인하여 아스톰사의 상용화 음이온 교환막(AMX)보다 높은 IEC와 낮은 전기저항 및 낮은 함수율 등을 나타내는 것을 확인할 수 있었다. 본 실험에서 제조된 복합막은 저렴한 제조비용과 우수한 전기화학적 특성으로 정수 및 폐수처리를 위한 전기투석공정에 충분히 적용될 수 있음을 알 수 있었다.

A simple method to deposit carbon nanotube films uniformly on large area substrates using an arc discharge method is reported in this paper. The arc discharge method was modified to deposit carbon nanotube films in situ on the substrates. The substrates were scanned several times over the arcing point for a uniform film thickness. Deposition was carried out under variable dc bias conditions at 600 torr of H2 gas. The thickness uniformity of the single-wall carbon nanotube films as characterized by a four-point probe was within 30% deviation. The morphology and crystal quality of the single-wall carbon nanotube film were also characterized by field emission scanning electron microscopy and Raman spectroscopy.

In this study, BaTiO3 thin films were grown by RF-magnetron sputtering, and the effects of a post-annealing process on the structural characteristics of the BaTiO3 thin films were investigated. For the crystallization of the grown thin films, post-annealing was carried out in air at an annealing temperature that varied from 500-1000˚C. XRD results showed that the highest crystal quality was obtained from the samples annealed at 600-700˚C. From the SEM analysis, no crystal grains were observed after annealing at temperatures ranging from 500 to 600˚C; and 80 nm grains were obtained at 700˚C. The surface roughness of the BaTiO3 thin films from AFM measurements and the crystal quality from Raman analysis also showed that the optimum annealing temperature was 700˚C. XPS results demonstrated that the binding energy of each element of the thin-film-type BaTiO3 in this study shifted with the annealing temperature. Additionally, a Ti-rich phenomenon was observed for samples annealed at 1000˚C. Depth-profiling analysis through a GDS (glow discharge spectrometer) showed that a stoichiometric composition could be obtained when the annealing temperature was in the range of 500 to 700˚C. All of the results obtained in this study clearly demonstrate that an annealing temperature of 700˚C results in optimal structural properties of BaTiO3 thin films in terms of their crystal quality, surface roughness, and composition.

WO3-doped SnO2 thin films were prepared in a solution-deposition method and their gas-sensing characteristics were investigated. The doping of WO3 to SnO2 increased the response (Ra/Rg, Ra: resistance in air, Rg: resistance in gas) to H2 substantially. Moreover, the Ra/Rg value of 10 ppm CO increased to 5.65, whereas that of NO2 did not change by a significant amount. The enhanced response to H2 and the selective detection of CO in the presence of NO2 were explained in relation to the change in the surface reaction by the addition of WO3. The WO3-doped SnO2 sensor can be used with the application of a H2 sensor for vehicles that utilize fuel cells and as an air quality sensor to detect CO-containing exhaust gases emitted from gasoline engines.

The structural and electrical properties of amorphous BaSm2Ti4O12 (BSmT) films on a TiN/SiO2/Si substrate deposited using a RF magnetron sputtering method were investigated. The deposition of BSmT films was carried out at 300˚C in a mixed oxygen and argon (O2 : Ar = 1 : 4) atmosphere with a total pressure of 8.0 mTorr. In particular, a 45 nm-thick amorphous BSmT film exhibited a high capacitance density and low dissipation factor of 7.60 fF/μm2 and 1.3%, respectively, with a dielectric constant of 38 at 100 kHz. Its capacitance showed very little change, even in GHz ranges from 1.0 GHz to 6.0 GHz. The quality factor of the BSmT film was as high as 67 at 6 GHz. The leakage current density of the BSmT film was also very low, at approximately 5.11 nA/cm2 at 2 V; its conduction mechanism was explained by the the Poole-Frenkel emission. The quadratic voltage coefficient of capacitance of the BSmT film was approximately 698 ppm/V2, which is higher than the required value (<100 ppm/V2) for RF application. This could be reduced by improving the process condition. The temperature coefficient of capacitance of the film was low at nearly 296 ppm/˚C at 100 kHz. Therefore, amorphous BSmT grown on a TiN substrate is a viable candidate material for a metal-insulator-metal capacitor.

A 532 nm Nd-YAG laser was applied to crystallize amorphous Si thin films in order to evaluate the applicability of a Nd-YAG laser to low-temperature polycrystalline Si technology. The irradiation of a green laser was controlled during the crystallization of amorphous Si thin films deposited onto glass substrates in a sophisticated process. Raman spectroscopy and UV-Visible spectrophotometry were employed to quantify the degree of crystallization in the Si thin films in terms of its optical transmission and vibrational characteristics. The effectiveness of the Nd-YAG laser is suggested as a feasible alternative that is capable of crystallizing the amorphous Si thin films.