In high-efficiency Cu(In,Ga)Se2 solar cells, Na is doped into a Cu(In,Ga)Se2 light-absorbing layer from sodalime-glass substrate through Mo back-contact layer, resulting in an increase of device performance. However, this supply of sodium is limited when the process temperature is too low or when a substrate does not supply Na. This limitation can be overcome by supplying Na through external doping. For Na doping, an NaF interlayer was deposited on Mo/glass substrate. A Cu(In,Ga)Se2 absorber layer was deposited on the NaF interlayer by a three-stage co-evaporation process As the thickness of NaF interlayer increased, smaller grain sizes were obtained. The resistivity of the NaF-doped CIGS film was of the order of 103Ω·cm indicating that doping was not very effective. However, highest conversion efficiency of 14.2% was obtained when the NaF thickness was 25 nm, suggesting that Na doping using an NaF interlayer is one of the possible methods for external doping.

In chemistry, the study of sonochemistry is concerned with understanding the effect of sonic waves and wave properties on chemical systems. In the area of chemical kinetics, it has been observed that ultrasound can greatly enhance chemical reactivity in a number of systems by as much as a million-fold. Nano-technology is a super microscopic technology in which structures of 100 nanometers or smaller can be investigated. This technology has been used to develop TiO2 materials and TiO2 devices of that size. Thus far, electrochemistry methods and photochemistry methods have generally been used to create TiO2 nano-size particles. However, these methods are complicated and create pollutants as a by-product. In the present study, nano-scale silver particles (5 nm) were prepared in a sonochemistry method. Sonochemistry deals with mechanical energy that is provided by the collapse of cavitation bubbles that form in solutions during exposure to ultrasound. TiO2 powders 25 nm in size doped with Ag were formed using an ultrasonic sound technique. The experimental results showed the high possibility of removing pollution through the action of a photocatalyst. This powder synthesis technique can be considered as an environmentally friendly powder-forming processing owing to its energy saving characteristics.

the less-reported gaseous studies have primarily dealt with chemical process stream concentrations than indoor air quality (IAQ) concentration levels. Accordingly, the current study was conducted to establish the feasibility of applying visible-light-induced TiO₂ doped with sulfur (S) element to cleanse toluene and ehtyl benzene at IAQ levels. The S-doped TiO₂ was prepared by applying two popular processes and two well-known methods. For both target compounds, the two coating methods exhibited different photocatalytic oxidation (PCO) efficiency. Similarly, the two S-doping processes showed different PCO efficiency. These results indicate that the coating method and doping process are important parameters which can influence PCO efficiency. Meanwhile, it was found that the PCO efficiency of ethyl benzene was higher than that of toluene. In addition, the degradation efficiency of the target compounds increased as the relative humidity (RH) decreased. The PCO efficiency varied from 44% to 74% for toluene and from 68% to 95%, as the RH decreased. Consequently, it is suggested that with appropriate RH conditions, the visible-light-assisted photocatalytic systems can also become an important tool for improving IAQ.

Mg-doped and In-Mg co-doped p-type GaN epilayers were grown in a low-pressure metal organic chemical vapor deposition technique. The effect of In doping on the p-GaN layer was studied through photoluminescence (PL), persistent photoconductivity (PPC), and transmission electron microscopy (TEM) at room temperature. For the In-doped p-GaN layer, the PL intensity increases significantly and the peak position shifts to 3.2 eV from 2.95 eV of conventional p-GaN. Additionally, In doping greatly reduces the PPC, which was very strong in conventional p-GaN. A reduction in the dislocation density is also evidenced upon In doping in p-GaN according to TEM images. The improved optical properties of the In-doped p-GaN layer are attributed to the high crystalline quality and to the active participation of incorporated Mg atoms.

In submicron MOSFET devices, maintaining the ratio between the channel length (L) and thechannel depth (D) at 3:1 or larger is known to be critical in preventing deleterious short-channel effects. Inthis study, n-type SOI-MOSFETs with a channel length of 0.1µm and a Si film thickness (channel depth) of0.033µm (L:D=3:1) were virtually fabricated using a TSUPREM-4 process simulator. To form functioningtransistors on the very thin Si film, a protective layer of 0.08µm-thick surface oxide was deposited prior tothe source/drain ion implantation so as to dampen the speed of the incoming As ions. The p-type boron dopingconcentration of the Si film, in which the device channel is formed, was used as the key variable in the processsimulation. The finished devices were electrically tested with a Medici device simulator. The result showedthat, for a given channel doping concentration of 1.9~2.5×1018cm−3, the threshold voltage was 0.5~0.7V, andthe subthreshold swing was 70~80mV/dec. These value ranges are all fairly reasonable and should form a‘magic region’ in which SOI-MOSFETs run optimally.

The mechanochemical process were employed to prepare the red phosphors (Y,Gd). The main factors affecting particle size, particle distribution, and luminescent properties of the product were investigated in details. Particles sized around 200-600 nm are formed after intensive milling. The phosphors were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM) and photoluminescence spectrum. Results revealed that phosphors with different morphology, small particle size and high luminescence intensity could be obtained by mechanochemical process

술폰화 폴리아릴에테르벤즈이미다졸 공중합체를 K2CO3를 이용한 직접중합법으로 합성하고 인산도핑을 하여 고온운전 연료전지용 고분자전해질 막을 제조하였다. 최적의 전해질 막 제조를 위하여 술폰화도 0~60% 및 도핑을 0.7~5.7의 범위에서 다양한 조성의 전해질 막 제조실험이 수행되었으며, 원자현미경분석 및 열중량분석, 수소 이온 전도도측정 등을 통해 전해질 막의 기본특성들을 평가하였다. 수소 이온 전도도는 도핑율에 따라 증가하는 것으로 나타났으며, 130℃의 비 가습환경에서 측정된 수소 이온 전도도는 도핑을 5.7의 전해질 막에서 최대 7.3×10 -2 S/cm의 값을 나타내었다.

Effects of oxygen deficiency on the room temperature ferromagnetism in Fe-doped reduced have been investigated by comparing the air-annealed compound with secondly post-annealed one in vacuum ambience. The air-annealed sample showed a paramagnetic behavior at room temperature. However, when the sample was further annealed in vacuum, a strongly enhanced ferromagnetic behavior was observed at same temperature. spectra of air-annealed sample at 295K showed a single doublet of , suggesting that the Fe ions are paramagnetic. On the other hand, the absorption spectra after vacuum-annealing exhibited two doublets, in which one is the same component with air-annealed sample and the other is new doublet corresponding to state. This result suggests that the occurrence of ferromagnetism in reduced sample may be interpreted as the contribution of unquenched orbital moment of ions.

Transition metal doped nanostructured powders were synthesized by mechanical alloying(MA) to shift the adsorption threshold into the visible light region. The synthesized powders were characterized by XRD, SEM, TEM and BET for structural analysis, UV-Vis and photoluminescence spectrum for the optical study. Also, photocatalytic abilities were evaluated by decomposition of 4-chlorophenol(4CP) under ultraviolet and visible light irradiations. Optical studies showed that the absorption wavelength of transition metal ions doped powders moved to visible light range, which was believed to be induced by the energy level change due to the doping. Among the prepared powders, doped powders, showed excellent photooxidative ability in 4CP decomposition