Photoanode optimization is a fascinating technique for enlightening the power conversion efficiency (PCE) of dye-sensitized solar cells (DSSCs). In this present study, V2O5/ ZnO and reduced graphene oxide (rGO)-V2O5/ZnO nanocomposites (NCs) were prepared by the solid-state technique and used as photoanodes for DSSCs. A wet chemical technique was implemented to generate individual V2O5 and ZnO nanoparticles (NPs). The structural characteristics of the as-synthesized NCs were investigated and confirmed using powder X-ray diffraction (XRD), X-ray photoelectron spectra (XPS), and Scanning electron microscope (SEM) with energy dispersive X-ray (EDX) analysis. The average crystallite size (D) of the as-synthesized V2O5/ ZnO and rGO-V2O5/ZnO NCs was determined by Debye-Scherer’s formula. The bandgap (eV) energy was calculated from Tauc’s plots, and the bonding nature and detection of the excitation of electrons were investigated using the Ultra violet (UV) visible spectra, Fourier Transform infrared (FTIR) and photoluminescence (PL) spectral analysis. Electrical studies like Hall effect analysis and the Nyquist plots are also described. The V2O5/ ZnO and rGO-V2O5/ZnO NCs based DSSCs exhibited 0.64% and 1.27% of PCE and the short circuit current densities and open circuit voltages improved from 7.10 to 11.28 mA/cm2 and from 0.57 to 0.68 V, respectively.

The Cu2ZnSn(SxSe1-x)4 (CZTSSe) absorbers are promising thin film solar cells (TFSCs) materials, to replace existing Cu(In,Ga)Se2 (CIGS) and CdTe photovoltaic technology. However, the best reported efficiency for a CZTSSe device, of 13.6 %, is still too low for commercial use. Recently, partially replacing the Zn2+ element with a Cd2+element has attracting attention as one of the promising strategies for improving the photovoltaic characteristics of the CZTSSe TFSCs. Cd2+ elements are known to improve the grain size of the CZTSSe absorber thin films and improve optoelectronic properties by suppressing potential defects, causing short-circuit current (Jsc) loss. In this study, the structural, compositional, and morphological characteristics of CZTSSe and CZCTSSe thin films were investigated using X-ray diffraction (XRD), X-ray fluorescence spectrometer (XRF), and Field-emission scanning electron microscopy (FE-SEM), respectively. The FE-SEM images revealed that the grain size improved with increasing Cd2+ alloying in the CZTSSe thin films. Moreover, there was a slight decrease in small grain distribution as well as voids near the CZTSSe/Mo interface after Cd2+ alloying. The solar cells prepared using the most promising CZTSSe absorber thin films with Cd2+ alloying (8 min. 30 sec.) exhibited a power conversion efficiency (PCE) of 9.33 %, Jsc of 34.0 mA/cm2, and fill factor (FF) of 62.7 %, respectively.

In this study, using a wet chemical process, we evaluate the effectiveness of different solution concentrations in removing layers from a solar cell, which is necessary for recovery of high-purity silicon . A 4-step wet etching process is applied to a 6-inch back surface field(BSF) solar cell. The metal electrode is removed in the first and second steps of the process, and the anti-reflection coating(ARC) is removed in the third step. In the fourth step, high purity silicon is recovered by simultaneously removing the emitter and the BSF layer from the solar cell. It is confirmed by inductively coupled plasma mass spectroscopy(ICP-MS) and secondary ion mass spectroscopy(SIMS) analyses that the effectiveness of layer removal increases with increasing chemical concentrations. The purity of silicon recovered through the process, using the optimal concentration for each process, is analyzed using inductively coupled plasma atomic emission spectroscopy(ICP-AES). In addition, the silicon wafer is recovered through optimum etching conditions for silicon recovery, and the solar cell is remanufactured using this recovered silicon wafer. The efficiency of the remanufactured solar cell is very similar to that of a commercial wafer-based solar cell, and sufficient for use in the PV industry.

With the recent accelerated policy-making and interests in new renewable energy, plans to develop and supply the new renewable energy have been devised across multiple regions in Korea. Solar energy, in particular, is being applied to small-scale power supply in provincial areas, as solar cells are used to convert solar energy into electric energy to produce electric power. Nonetheless, in the case of solar power plants, the need for a large stretch of land and considerable sum of financial support implies that the planning step should take into consideration the most suitable meteorological and geographical factors. In this study, the proxy variables of meteorological and geographical factors associated with solar energy were considered in analyzing the vulnerable areas regarding the photovoltaic power generation facility across the nation. GIS was used in the spatial analysis to develop a map for assessing the optimal location for photovoltaic power generation facility. The final vulnerability map developed in this study did not reveal any areas that exhibit vulnerability level 5 (very high) or 1 (very low). Jeollanam-do showed the largest value of vulnerability level 4 (high), while a large value of vulnerability level 3 (moderate) was shown by several administrative districts including Gwangju metropolitan city, Jeollabuk-do, Chungcheongbuk-do, and Gangwon- do. A value of vulnerability level 2 (low) was shown by the metropolitan cities including Daegu, Ulsan, and Incheon. When the 30 currently operating solar power plants were compared and reviewed, most were found to be in an area of vulnerability level 2 or 3, indicating that the locations were relatively suitable for solar energy. However, the limited data quantity for solar power plants, which is the limitation of this study, prevents the accuracy of the findings to be clearly established. Nevertheless, the significance of this study lies in that an attempt has been made to assess the vulnerability map for photovoltaic power generation facility targeting various regions across the nation, through the use of the GIS-based spatial analysis technique that takes into account the diverse meteorological and geographical factors. Furthermore, by presenting the data obtained for all regions across the nation, the findings of this study are likely to prove useful as the basic data in fields related to the photovoltaic power generation.

The photovoltaic properties of TiO2 used for the electron transport layer in perovskite solar cells(PSCs) are compared according to the particle size. The PSCs are fabricated and prepared by employing 20 nm and 30 nm TiO2 as well as a 1:1 mixture of these particles. To analyze the microstructure and pores of each TiO2 layer, a field emission scanning electron microscope and the Brunauer–Emmett–Teller(BET) method are used. The absorbance and photovoltaic characteristic of the PSC device are examined over time using ultraviolet-visible-near-infrared spectroscopy and a solar simulator. The microstructural analysis shows that the TiO2 shape and layer thicknesses are all similar, and the BET analysis results demonstrate that the size of TiO2 and in surface pore size is very small. The results of the photovoltaic characterization show that the mean absorbance is similar, in a range of about 400-800 nm. However, the device employing 30 nm TiO2 demonstrates the highest energy conversion efficiency(ECE) of 15.07 %. Furthermore, it is determined that all the ECEs decrease over time for the devices employing the respective types of TiO2. Such differences in ECE based on particle size are due to differences in fill factor, which changes because of changes in interfacial resistance during electron movement owing to differences in the TiO2 particle size, which is explained by a one-dimensional model of the electron path through various TiO2 particles.

We investigate the effect of light intensity and wavelength of a solar cell device using photoconductive atomic force microscopy(PC-AFM). A POCl3 diffusion doping process is used to produce a p-n junction solar cell device based on a poly- Si wafer, and the electrical properties of prepared solar cells are measured using a solar cell simulator system. The measured open circuit voltage(Voc) is 0.59 V and the short circuit current(Isc) is 48.5 mA. Moreover, the values of the fill factors and efficiencies of the devices are 0.7 and approximately 13.6%, respectively. In addition, PC-AFM, a recent notable method for nano-scale characterization of photovoltaic elements, is used for direct measurements of photoelectric characteristics in limited areas instead of large areas. The effects of changes in the intensity and wavelength of light shining on the element on the photoelectric characteristics are observed. Results obtained through PC-AFM are compared with the electric/optical characteristics data obtained through a solar simulator. The voltage(VPC-AFM) at which the current is 0 A in the I-V characteristic curves increases sharply up to 18 W/m2, peaking and slowly falling as light intensity increases. Here, VPC-AFM at 18 W/m2 is 0.29 V, which corresponds to 59 % of the average Voc value, as measured with the solar simulator. Furthermore, while the light wavelength increases from 300 nm to 1,100 nm, the external quantum efficiency(EQE) and results from PC-AFM show similar trends at the macro scale but reveal different results in several sections, indicating the need for detailed analysis and improvement in the future.

In this study, chemical bath deposited (CBD) indium sulfide buffer layers were investigated as a possible substitution for the cadmium sulfide buffer layer in CIGS thin film solar cells. The performance of the In2S3/CIGS solar cell dramatically improved when the films were annealed at 300˚C in inert gas after the buffer layer was grown on the CIGS film. The thickness of the indium sulfide buffer layer was 80 nm, but decreased to 60 nm after annealing. From the X-ray photoelectron spectroscopy it was found that the chemical composition of the layer changed to indium oxide and indium sulfide from the as-deposited indium hydroxide and sulfate states. Furthermore, the overall atomic concentration of the oxygen in the buffer layer decreased because deoxidation occurred during annealing. In addition, an In-thin layer was inserted between the indium sulfide buffer and CIGS in order to modify the In2S3/CIGS interface. The In2S3/CIGS solar cell with the In interlayer showed improved photovoltaic properties in the Jsc and FF values. Furthermore, the In2S3/CIGS solar cells showed higher quantum efficiency in the short wavelength region. However, the quantum efficiency in the long wavelength region was still poor due to the thick buffer layer.