본 연구에서는 폴리술폰층 표면에 계면 중합 반응을 시켜 정삼투 복합 박막을 얻는 방법에 있어서, 지지층인 폴 리술폰층과 활성층인 폴리아미드층 사이에 테트라에톡시실란 단량체의 졸-젤 반응을 통하여 고분자를 합성함으로써 친수성 경계층을 형성시키는 방법에 관한 제조법을 제시하였다. 폴리술폰층은 막 저항을 최소화하기 위하여 아주 얇은 부직포를 사 용하였다. 테트라에톡시실란의 졸-젤 반응으로 형성된 고분자 경계층이 폴리술폰층과 폴리아미드층 사이에 형성된 정삼투 분 리막은 친수화도, 유량 향상 등 정삼투 분리막 투과 특성에 있어 향상된 결과를 보여 주었다. 폴리아미드 계면 중합과 테트라 에톡시실란 졸-젤 중합의 순서를 변화시킴으로써 표면 구조 특성 및 정삼투 투과 특성이 크게 달라짐을 볼 수 있었다. 정삼투 막의 투과 특성은 실험실 용량의 정삼투 평가 장치를 통하여, 정삼투 분리막 내 폴리실록산의 분포와 구조는 FE-SEM과 EDAX를 이용하여 조사하였다. PS_PA_TEOS막의 경우 유량에 있어 79.2 LMH로 현격한 증가가 있었으나 염의 역확산 속도 역시 7.10 GMH로 증가하였다. 반면 PS_TEOS_PA막의 경우 PS_PA막에 비해 염의 역확산 속도는 1.60 GMH로 유지되면서 유량이 54.1 LMH로 증가하는 현상을 확인할 수 있었다.

Tungsten (W) thin film was deposited at 400 oC using pulsed chemical vapor deposition (pulsed CVD); film was then evaluated as a nucleation layer for W-plug deposition at the contact, with an ultrahigh aspect ratio of about 14~15 (top opening diameter: 240~250 nm, bottom diameter: 98~100 nm) for dynamic random access memory. The deposition stage of pulsed CVD has four steps resulting in one deposition cycle: (1) Reaction of WF6 with SiH4. (2) Inert gas purge. (3) SiH4 exposure without WF6 supply. (4) Inert gas purge while conventional CVD consists of the continuous reaction of WF6 and SiH4. The pulsed CVD-W film showed better conformality at contacts compared to that of conventional CVD-W nucleation layer. It was found that resistivities of films deposited by pulsed CVD were closely related with the phases formed and with the microstructure, as characterized by the grain size. A lower contact resistance was obtained by using pulsed CVD-W film as a nucleation layer compared to that of the conventional CVD-W nucleation layer, even though the former has a higher resistivity (~100 μΩ-cm) than that of the latter (~25 μΩ-cm). The plan-view scanning electron microscopy images after focused ion beam milling showed that the lower contact resistance of the pulsed CVD-W based W-plug fill scheme was mainly due to its better plug filling capability.

We developed an Al sputtering process by varying the plasma power, process temperature, and film thickness. We observed an increase of hillock distribution and average diameter with increasing plasma power, process temperature, and film thickness. Since the roughness of a film increases with the increase of the distribution and average size of hillocks, the control of hillock formation is a key factor in the reduction of Al corrosion. We observed the lowest hillock formation at 30 W and 100 oC. This growth characteristic of sputtered Al thin films will be useful for the reduction of Al corrosion in the future of the electronic packaging field.

정삼투 분리막 용도에 적합한 폴리아미드 복합막의 제조에 있어 지지층의 극성 및 공극률이 폴리아미드 구조 및 정삼투 분리막 투과 성능에 미치는 영향을 살펴보기 위하여 클레쏘킬레이트 금속착물(0.1-0.5중량%)이 함유된 폴리술폰(18중 량%) 용액을 상전이 공정을 통하여 지지층을 제조하였다. 제조된 지지층 상에 방향족 폴리아미드 활성층을 제막하였다. 다공 성 PSF 지지층 제조를 위하여 상대적으로 낮은 폴리술폰(12중량%) 용액을 이용한 지지층을 폴리에스터 필름상에서 제조한 후 필름을 제거하고 제조된 지지층 상에 방향족 폴리아미드 활성층을 제막하였다. 제막된 시편 중 폴리술폰(18중량%)/금속착 물(0.5중량%)로 만들어진 FO막은 유량 9.99 LMH, reverse salt flux 0.77 GMH로 HTI의 상용막(10.97 LMH, 2.2 GMH)과 비교해도 거의 비슷한 유량값과 향상된 RSF 값을 얻을 수 있었다. 캐스팅 용액의 금속착물의 첨가로 활성층 두께가 줄어들 었으나 제거효율은 향상되는 결과를 얻을 수 있었다.

Magnetostrictive actuator is fabricated with powder nano bonding method instead of sputtering method. Fabrication process and experimental measurement method for magneto-mechanical characteristics is proposed. For the design of highly flexible magnetostrictive actuator, TbDyFe nano powder bonding with Teflon substrate is adopted. The fabrication process for Teflon substrate and nano powder bonding is suggested and magnetostrictive behaviors are investigated. Variable magnetic field is applied to measure the magnetostrictive characteristics and magnetostriction is measured with different waves and different magnitude of magnetic field.

Thin-film composite (TFC) membrane is currently the most widely used membrane structure for reverse osmosis (RO) process. Most commercial membrane for RO consisted of porous support layer and dense polyamide permselective layer, yet the polyamide layer has a very rough surface morphology and considerable thickness, and these features are intrinsic properties of current RO membrane fabrication process. In this study, we present the new membrane fabrication, named layered interfacial polymerization (LIP). LIP could control the roughness and thickness of permselective layer without complicated process or significant membrane performance loss, and the performance itself was comparable to conventional IP membrane. Moreover, the fabricated membrane has a remarkable antifouling ability possibly due to the unique smooth morphology.

20 μm의 얇은 폴리에스터(polyester) 부직포 상에 폴리술폰(polysulfone) 고분자 지지체를 제조하였다. 폴리아미드 계면 중합이 일어날 폴리술폰 표면에 폴리 실록산 층이 형성될 수 있도록 실란 화합물을 중합하여 폴리실록산 지지체를 제조하였다. 얻어진 복합막 지지층에서 MPD 수용액과 TMC 유기용액을 계면 중합을 실시한 결과 정삼투 분리용 복합박막을 얻을 수 있었다. FE-SEM을 이용하여 지지층의 구조가 sponge-like 구조임을, EDX를 통하여 폴리실록산이 표면에 한하여 분포됨을 확인하였으며 1 M NaCl 유도용액하에서의 FO-mode 유량 이 79.2 - 117 LMH로 향상되었으며 RSF값은 2.12 - 7.97 GMH로 유지함을 확인할 수 있었다.

Tin oxides have been studied for various applications such as gas detecting materials, transparent electrodes, transparent devices, and solar cells. p-type SnO is a promising transparent oxide semiconductor because of its high optical transparency and excellent electrical properties. In this study, we fabricated p-type SnO thin film using rf magnetron sputtering with an SnO/Sn composite target; we examined the effects of various oxygen flow rates on the SnO thin films. We fundamentally investigated the structural, optical, and electrical properties of the p-type SnO thin films utilizing X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV/Vis spectrometry, and Hall Effect measurement. A p-type SnO thin film of PO2 = 3 % was obtained with > 80 % transmittance, carrier concentration of 1.12 × 1018 cm−3, and mobility of 1.18 cm2V− 1s−1. With increasing of the oxygen partial pressure, electrical conductivity transition from p-type to n-type was observed in the SnO crystal structure.

The properties of zinc oxynitride semiconductors and their associated thin film transistors are studied. Reactively sputtered zinc oxynitride films exhibit n-type conduction, and nitrogen-rich compositions result in relatively high electron mobility. Nitrogen vacancies are anticipated to act as shallow electron donors, as their calculated formation energy is lowest among the possible types of point defects. The carrier density can be reduced by substituting zinc with metals such as gallium or aluminum, which form stronger bonds with nitrogen than zinc does. The electrical properties of gallium-doped zinc oxynitride thin films and their respective devices demonstrate the carrier suppression effect accordingly.

In this study, we investigated the effect of annealing conditions on the ferromagnetic resonance(FMR) of yttrium iron garnet (Y3Fe5O12, YIG) thin film prepared on gadolinium gallium garnet (Gd3Ga5O12, GGG) substrate. The YIG thin films were grown by rf magnetron sputtering at room temperature and were annealed at various temperatures from 700 to 1000 ˚C. FMR characteristics of the YIG thin films were investigated with a coplanar waveguide FMR measurement system in a frequency range from 5 to 20 GHz. X-ray diffraction(XRD) and X-ray photoelectron spectroscopy(XPS) were used to characterize the phase formation, crystal structure and composition of the YIG thin films. Field dependent magnetization curves at room temperature were obtained by using a vibrating sample magnetometer(VSM). The FMR measurements revealed that the resonance magnetic field was highly dependent on the annealing condition: the lowest FMR linewidth can be observed for the 800 ˚C annealed sample, which agrees with the VSM results. We also found that the Fe and O composition changes during the annealing process play important roles in the observed magnetic properties.

스테아르산과 인지질혼합물의 농도변화에 띠르는 유기초박막에 대한 안정성을 조사하였다. 스 테아르산과 인지질 혼합물 유기초박막은 ITO glass에 LB법을 사용하여 제막하였다. 전기화학적 특성은 NaClO4 용액에서 3 전극 시스템으로 순환전압전류법을 사용하여 초기 1650 mV에서 최종 퍼텐셜 -1350 mV 까지 측정하였다. 그 결과 스테아르산과 인지질의 혼합물 유기초막은 순환전압전류도표로부 터 산화전류로 인한 비가역공정으로 나타났다. 스테아르산과 인지질혼합물 LB막(몰비 1:1, 1:2, 1:3)에 서 확산계수(D)는 0.01 N NaClO4에서 각각 1.4x10-3, 1.7x10-3 및 1.6x10-3 (cm2/s)로 산출되었다.

To research the characteristics of ITO film depending on a polarity of SiOC, specimens of ITO/SiOC/glass with metal-insulator-substrates (MIS) were prepared using a sputtering system. SiOC film with 17 sccm of oxygen flow rate became a non-polarity with low surface energy. The PL spectra of the ITO films deposited with various argon flow rates on SiOC film as non-polarity were found to lead to similar formations. However, the PL spectra of ITO deposited with various argon flow rates on SiOC with polarity were seen to have various features owing to the chemical reaction between ITO and the polar sites of SiOC. Most ITO/SiOC films non-linearly showed the Schottky contacts and current increased. But the ITO/SiOC film with a low current demonstrated an Ohmic contact.

제련공정 산업에서 발생하는 희소/유가 금속을 함유한 산 폐수는 금속의 산세정 과정에서 다량 방출된다. 주로 중화나 치환법, 이온교환법 등을 사용하였지만 큰 비용과 친환경적이지 못한 단점이 있다. 이에 본 연구에서는 제련 공정에서 발생하는 희소금속을 함유한 폐산용액을 막분리법을 적용하여 분리하기 위해 내산성이 향상된 thin-film composite NF membranes (TFC-NF)을 제조하고자 하였다. TFC-NF는 다공성 지지막 위에 polyamide 계면중합법을 이용하여 제조하였다. 제조 한 TFC-NF는 15 wt% 황산에 노출한 후, 75psi 압력의 cross-flow 방식으로 내산성 투과실험을 진행하였고 ATR-FTIR, XPS, FE-SEM 등을 통해 막의 특징을 분석하였다.

Fluorine-doped SnO2 (FTO) thin film/Ag nanowire (NW) double layers were fabricated by means of spin coating and ultrasonic spray pyrolysis. To investigate the optimum thickness of the FTO thin films when used as protection layer for Ag NWs, the deposition time of the ultrasonic spray pyrolysis process was varied at 0, 1, 3, 5, or 10 min. The structural, chemical, morphological, electrical, and optical properties of the double layers were examined using X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, transmission electron microscopy, the Hall effect measurement system, and UV-Vis spectrophotometry. Although pure Ag NWs formed isolated droplet-shaped Ag particles at an annealing temperature of 300 oC, Ag NWs covered by FTO thin films maintained their high-aspect-ratio morphology. As the deposition time of the FTO thin films increased, the electrical and optical properties of the double layers degraded gradually. Therefore, the double layer fabricated with FTO thin films deposited for 1 min exhibited superb sheet resistance (~14.9Ω/□), high optical transmittance (~88.6 %), the best FOM (~19.9 × 10−3 Ω−1), and excellent thermal stability at an annealing temperature of 300 oC owing to the good morphology maintenance of the Ag NWs covered by FTO thin films.

Glancing angle deposition (GLAD) is a powerful technique to control the morphology and microstructure of thin film prepared by physical vapor deposition. Chromium (Cr) thin films were deposited on a polymer substrate by a sputtering technique using GLAD. The change in thickness and Vickers microhardness for the samples was observed with a change in the glancing angle. The adhesion properties of the critical load (Lc) by a scratch tester for the samples were also measured with varying the glancing angle. The critical load, thickness and Vickers microhardness for the samples decreased with an increase in the glancing angle. However, the thickness of the Cr thin film prepared at a 90o glancing angle showed a relatively large value of 50 % compared to that of the sample prepared at 0o. The results of X-ray diffraction and scanning electron microscopy demonstrated that the effect of GLAD on the microstructure of samples prepared by sputter technique was not as remarkable as the samples prepared by evaporation technique. The relatively small change in thickness and microstructure of the Cr thin film is due to the superior step-coverage properties of the sputter technique.

(PDDA/SiO2) thin films that consisted of positively charged poly (diallyldimethylammonium chloride) (PDDA) and negatively charged SiO2 nanoparticles were fabricated on a glass substrate by an applying voltage layer-by-layer (LBL) self-assembly method. In this study, the microstructure and optical properties of the (PDDA/SiO2) thin films coated on glass substrate were measured as a function of the applied voltage on the Pt electrodes. When 1.0 V was applied to a Pt electrode in a PDDA and SiO2 solution, the thickness of the (PDDA/SiO2)10 thin film increased from 79 nm to 166 nm. The surface roughness also increased from 15.21 nm to 33.25 nm because the adsorption volume of the oppositely charged PDDA and SiO2 solution increased. Especially, when the voltage was applied to the Pt electrode in the SiO2 solution, the thickness increase of the (PDDA/SiO2) thin film was larger than that obtained when using the PDDA solution. The refractive index of the fabricated (PDDA/SiO2) thin film was ca. n = 1.31~1.32. The transmittance of the glass substrate coated by (PDDA/SiO2)6 thin film with a thickness of 106 nm increased from ca. 91.37 to 95.74% in the visible range.

Herein, we describe the effect of the cooling-off condition of a solution-processed 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) film on its molecular distribution and the resultant electrical properties. Since the solvent in a TIPS-pentacene droplet gradually evaporates from the rim to the center exhibiting a radial form of solute, for a quenched case, domains of the TIPS-pentacene film are aboriginally spread showing original features of radial shape due to suppressed molecular rearrangement during the momentary cooling period. For the slowly cooled case, however, TIPS-pentacene molecules are randomly rearranged during the long cooling period. As a result, in the lopsided electrodes structure proposed in this work, the charge transport generates more effectively under the case for radial distribution induced by the quenching technique. It was found that the molecular redistribution during the cooling-period plays an important role on the magnitude of the mobility in a solution-processed organic transistor. This work provides at least a scientific basis between the molecular distribution and electrical properties in solution-processed organic devices.

Amorphous (a-Si) films were epitaxially crystallized on a very thin large-grained poly-Si seed layer by a silicide-enhanced rapid thermal annealing (SERTA) process. The poly-Si seed layer contained a small amount of nickel silicide whichcan enhance crystallization of the upper layer of the a-Si film at lower temperature. A 5-nm thick poly-Si seed layer was thenprepared by the crystallization of an a-Si film using the vapor-induced crystallization process in a NiCl2 environment. Afterremoving surface oxide on the seed layer, a 45-nm thick a-Si film was deposited on the poly-Si seed layer by hot-wire chemicalvapor deposition at 200oC. The epitaxial crystallization of the top a-Si layer was performed by the rapid thermal annealing(RTA) process at 730oC for 5 min in Ar as an ambient atmosphere. Considering the needle-like grains as well as thecrystallization temperature of the top layer as produced by the SERTA process, it was thought that the top a-Si layer wasepitaxially crystallized with the help of NiSi2 precipitates that originated from the poly-Si seed layer. The crystallinity of theSERTA processed poly-Si thin films was better than the other crystallization process, due to the high-temperature RTA process.The Ni concentration in the poly-Si film fabricated by the SERTA process was reduced to 1×1018cm−3. The maximum field-effect mobility and substrate swing of the p-channel poly-Si thin-film transistors (TFTs) using the poly-Si film prepared by theSERTA process were 85cm2/V·s and 1.23V/decade at Vds=−3V, respectively. The off current was little increased underreverse bias from 1.0×10−11 A. Our results showed that the SERTA process is a promising technology for high quality poly-Si film, which enables the fabrication of high mobility TFTs. In addition, it is expected that poly-Si TFTs with low leakagecurrent can be fabricated with more precise experiments.

내염소성을 갖는 염제거공정용 술폰화 폴리아릴렌 에테르 술폰 랜덤 공중합체(SPAES) thin film composite (TFC)막이 모노글라임 용매를 이용하여 제조되었다. 모노글라임은 선택층인 SPAES만을 용해시키며, 다공성 폴리술폰(예 : Udel®)층에 대해 비용해성을 지녀, TFC 제조를 위한 선택적 용매로 사용될 수 있다. 또한 개미산이나 디에틸글리콜과는 달리, 환경적으로 무해하며, 매우 낮은 끊는점을 지녔다는 점이 또 다른 장점이 될 수 있다. 다공성 Udel® 지지체 위에 코팅시, 코팅용액이 기공구조에 침투하여 유수량을 감소시키는 기공투과현상이 발생하는데, 이를 최소화하기 위해 지지체를 이소프로필알콜과 글리세린 혼합액에서 전처리 후에, 코팅-건조 공정을 통해 결함이 없는 SPAES TFC로 제조된다. 또한, SPAES 선택층의술폰화도, 고정이온의 염상태 및 물리-화학적 가교효과를 SPAES TFC막을 통한 투과거동과 관련하여 관찰하였다.

기존의 폴리아마이드 박막 역삼투 복합막(PA TFC RO Membrane)은 우수한 분리투과특성을 지니고 있으나 내염소성이 상대적으로 낮은 단점을 지니고 있다. 본 연구에서는 이를 해결하기 위하여 표면에 -OH나 -COOH 기가 도입된 다공성 지지체를 제조하고, 그 표면에 폴리아마이드 박막을 형성하여 역삼투 복합막을 제조하였다. 제조된 역삼투막의 구조 및 분리투과 특성은 여러 가지 기기분석 방법과 투과테스트 방법으로 분석하였다. 폴리아마이드 박막을 제조하기 위하여 아민계 단량체로는 메타-페닐렌 디아민(MPD)과 2,6-디아민 톨루엔(2,6-DAT)을 사용하였고, 디엑시드계 단량체로는 트리-메소일 클로라이드(TMC)를 사용하였다. 제조된 복합막의 투과도는 800 psi에서 약 1.0 m3/m2day 이상이었으며 이때 염배제율은 99.0% 이상이었다. 내염소성도 친수성기가 없는 폴리설폰 지지체를 사용한 복합막에 비하여 우수한 것으로 나타났다.