Using lanthanum zinc oxide (LZO) film with the ion-beam irradiation, uniform and homogeneous liquid crystal (LC) alignment was achieved. To fabricate the LZO thin film on glass substrate, solution process was conducted as a deposition method. Cross-polarized optical microscopy (POM) and the crystal rotation method reveal the state of LC alignment on the ion-beam irradiated LZO film. Between orthogonally placed polarizers, POM image showed constant black color with regular transmittance. Furthermore, collected incidence angle versus transmittance curve from the crystal rotation method revealed that the LC molecules on the ion-beam irradiated LZO film were aligned homogeneously. Atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) were conducted to reveal the relationship between the ion-beam irradiation and the LC alignment. The ion-beam irradiation changed the LZO film surface to rougher than before by etching effect. Numerical roughness values from AFM analysis supported this phenomenon specifically. XPS analysis showed the chemical composition change due to the ion-beam irradiation by investigation of O 1s, La 3d and Zn 2p spectra. The ion-beam irradiation induced the breakage of chemical bonds in the LZO film surface and this occurred surface chemical anisotropic characteristics for uniform LC alignment.

The ion-beam irradiated lanthanum zinc oxide (LZO) films were conducted as liquid crystal (LC) alignment layer to achieve uniform and homogeneous alignment of LC molecules. Polarized optical microscopy and the pre-tilt angle measurements revealed the alignment characteristics of LC molecules on the LZO film surface. Physical characteristics of the LZO film surface were analyzed by field emission scanning electron microscope and atomic force microscopy. The strong ion-beam irradiation on the LZO film changed surface rougher than before and induced physical anisotropic characteristics. Chemical composition of the LZO film was investigated by X-ray photoelectron spectroscopy and it was revealed that the ion-beam irradiation induced the breakage of the metal-oxide bonds. Due to this, anisotropic dipole moment which related with van der Waals force between LC molecules and alignment layer was induced. Because of this, LC molecules were anchored to the LZO film surface to achieve uniform LC alignment. Collecting the capacitance-voltage curve, residual DC of the LC cell with the LZO films was measured and it was verified that the LC cell with the LZO film had a nearly zero residual DC. Therefore, the ion-beam irradiated LZO film is an efficient method as an LC alignment layer

고리 1호기는 원전해체 계획에 따라 영구정지 이후 가능한 한 빠른 시일 내에 원자로냉각재계통의 화학제염을 수행할 계획으로, 계통제염 기술 확보를 위해 한수원에서는 2014년부터‘원전 해체설계를 위한 냉각재계통 및 기기제염 상용기술 개발’연구과제를 통해 화학제염기술을 개발하고 있다. 본 연구를 위해 Lab. 규모 계통제염 공정장치를 제작하였으며, 계통제염 대상의 주요재료인 STS304, 316, 410, Alloy600, SA508을 사용하여 화학제염 공정실험을 수행하였다. 화학제염 공정실험의 목적은 산화-환원공정의 최적시간, 최적제염제 및 공정횟수를 도출하기 위함이다. 화학제염 공정실험은 과망간산-옥살산 기반의 단위공정 및 연속공정 실험, 과망간산+질산-옥살산 기반의 연속공정 실험으로 나누어 수행하였다. 그 결과 단위공정실험을 통해 최적공정 시간인 산화공정 5시간, 환원공정 4시간을 도출하였으며, 연속공정실험을 통해 최적제 염제와 공정횟수를 도출하였다. 최적제염제는 산화제의 경우 200 mg·L-1 과망간산 + 200 mg·L-1 질산이고, 환원제는 2000 mg·L-1 옥살산이며, 공정횟수는 STS304와 SA508의 경우 2 cycle, Alloy600의 경우 3 cycle 이상 수행하는 것이 적절할 것 으로 평가되었다.

We used an etching process to control the line-width of screen printed Ag paste patterns. Ag paste was printed on anodized Al substrate to produce a high power LED. In general, Ag paste spreads or diffuses on anodized Al substrate in the process of screen printing; therefore, the line-width of the printed Ag paste pattern increases in contrast with the ideal line-width of the pattern. Smudges of Ag paste on anodized Al substrate were removed by neutral etching process without surface damage of the anodized Al substrate. Accordingly, the line-width of the printed Ag paste pattern was controlled as close as possible to the ideal line-width. When the etched Ag paste pattern was used as a seed layer for electroless Ni plating, the line width of the plated Ni film was similar to the line-width of the etched Ag paste pattern. Finally, in pattern formation by Ag paste screen printing, we found that the accuracy of the line-width of the pattern can be effectively improved by using an etching process before electroless Ni plating.

초임계 건식 식각 공정에서 HF수용액을 초임계 이산화탄소에 녹인 식각용액을 사용하여 희생막으로 사용되는 테트라에톡시실란막 (TEOS막) 층에 대한 식각성능을 조사하였다. HF에 대한 물의 조성에 따른산화막 식각률의 비교를 통하여 식각에 가장 효과적인 비율을 조사하였다. 50 wt%의 HF수용액을 이용하여 초임계 이산화탄소에서 TEOS막의 건식식각을 진행 할 경우, 990nm/min의 높은 식각속도와 잔여물이 전혀 남지 않는 우수한 식각성능을 확인할 수 있었다.

In semiconductor manufacturing, the circuit integrity of packaged BGA devices is tested by measuring electrical resistance using test sockets. Test sockets have been reported to often fail earlier than the expected life-time due to high contact resistance. This has been attributed to the formation of Sn oxide films on the Au coating layer of the probe pins loaded on the socket. Similar to contact failure, and known as "fretting", this process widely occurs between two conductive surfaces due to the continual rupture and accumulation of oxide films. However, the failure mechanism at the probe pin differs from fretting. In this study, the microstructural processes and formation mechanisms of Sn oxide films developed on the probe pin surface were investigated. Failure analysis was conducted mainly by FIB-FESEM observations, along with EDX, AES, and XRD analyses. Soft and fresh Sn was found to be transferred repeatedly from the solder bump to the Au surface of the probe pins; it was then instantly oxidized to SnO. The SnO2 phase is a more stable natural oxide, but SnO has been proved to grow on Sn thin film at low temperature (< 150˚C). Further oxidation to SnO2 is thought to be limited to 30%. The SnO film grew layer by layer up to 571 nm after testing of 50,500 cycles (1 nm/100 cycle). This resulted in the increase of contact resistance and thus of signal delay between the probe pin and the solder bump.

Silicon dioxide as gate dielectrics was grown at 400˚C on a polycrystalline Si substrate by inductively coupled plasma oxidation using a mixture of O2 and N2O to improve the performance of polycrystalline Si thin film transistors. In conventional high-temperature N2O annealing, nitrogen can be supplied to the Si/SiO2 interface because a NO molecule can diffuse through the oxide. However, it was found that nitrogen cannot be supplied to the Si/SiO2 interface by plasma oxidation as the N2O molecule is broken in the plasma and because a dense Si-N bond is formed at the SiO2 surface, preventing further diffusion of nitrogen into the oxide. Nitrogen was added to the Si/SiO2 interface by the plasma oxidation of mixtures of O2/N2O gas, leading to an enhancement of the field effect mobility of polycrystalline Si TFTs due to the reduction in the number of trap densities at the interface and at the Si grain boundaries due to nitrogen passivation.

Oxide effects experiments on massive hydriding reactions of Zr alloy with hydrogen gas were carried out at 400˚C under 1 atm in a H2 environment with a thermo-gravimetric apparatus (TGA). Experimental results for oxide effects on massive hydriding kinetics show that incubation time is not proportional to oxide thickness. The results also show that the massive hydriding kinetics of pre-filmed Zr alloys follows linear kinetic law and that the hydriding rates are similar to that of oxide-free Zr alloys once massive hydriding is initiated. Unlikely microstructure of the oxide during incubation time, physical defects such as micro-cracks and pores were observed in the oxide after incubation time. Therefore, it seems that the massive hydriding of Zr alloys can be ascribed to short circuit paths and mechanical or physical defects, such as micro-cracks and pores in the oxide, rather than to hydrogen diffusion through the oxide resulting from the increase of oxygen vacancies in the hypo-stoichiometric oxide.