Single OLED and tandem OLED was manufactured to analyze the electroluminescence characteristics of DC driving, AC driving, and full-wave rectification driving. The threshold voltage of OLED was the highest in DC driving, and the lowest in full-wave rectification driving due to an improvement of current injection characteristics. The luminance at a driving voltage lower than 10.5 V (8,534 cd/m2) of single OLED and 20 V (7,377 cd/m2) of a tandem OLED showed that the full-wave rectification drive is higher than that of DC drive. The luminous efficiency of OLED is higher in full-wave rectification driving than in DC driving at low voltage, but decrease at high voltage. The full-wave rectification power source may obtain higher current density, higher luminance, and higher current efficiency than the AC power source. In addition, it was confirmed that the characteristics of AC driving and full-wave rectification driving can be predicted from DC driving characteristics by comparing the measured values and calculated values of AC driving and full-wave rectification driving emission characteristics. From the above results, it can be seen that OLED lighting with improved electroluminescence characteristics compared to DC driving is possible using full-wave rectification driving and tandem OLED.

This paper proposes a mathematical model that can calculate the luminescence characteristics driven by alternating current (AC) power using the current-voltage-luminance (I-V-L) properties of organic light emitting devices (OLED) driven by direct current power. Fluorescent OLEDs are manufactured to verify the model, and I-V-L characteristics driven by DC and AC are measured. The current efficiency of DC driven OLED can be divided into three sections. Region 1 is a section where the recombination efficiency increases as the carrier reaches the emission layer in proportion to the increase of the DC voltage. Region 2 is a section in which the maximum luminous efficiency is stably maintained. Region 3 is a section where the luminous efficiency decreases due to excess carriers. Therefore, the fitting equation is derived by dividing the current density and luminance of the DC driven OLED into three regions, and the current density and luminance of the AC driven OLED are calculated from the fitting equation. As a result, the measured and calculated values of the AC driving I-V-L characteristics show deviations of 4.7% for current density, 2.9% for luminance, and 1.9% for luminous efficiency.

OLED Display fabrication system is one of the most complicated discrete processing systems in the world. As the glass size grows from 550×650mm to 1,500×1,850mm in recent years, the efficiency of Automated Material Handling System (AMHS) has become very important and OLED glass manufacturers are trying to improve the overall efficiency of AMHS. Aiming to meet the demand for high efficiency of transportation, various kind of approaches have been applied for improving dispatching rules and facility layout, while simultaneously considering the system parameters such as glass cassettes due date, waiting time, and stocker buffer status. However, these works did not suggest the operational policy and conditions of distribution systems, especially for handling unnecessary material flows such as detour. Based on this motivation, in this paper, we proposed an efficient algorithm for improving detour transportation in OLED FAB. Specifically, we considered an OLED FAB simplifying OLED production environment in a Korean company, where four stockers are constructed for the delivery of Lot in a bay and linked to processing equipments. We developed a simulation model using Automod and performed a numerical experiment using real operational data to test the performance of three operation policies under considerations. We showed that a competitive policy for assigning alternative stocker in case of detour was superior to the current dedicated policy using a specified stocker and other considered policies.

A new green light emitting compound based on tris (N-methylindolo) benzene (NMTI), anthracene and pyrene was synthesized. NMTI-An and NMTI-Py were used as the light emitting layer of the OLED element to investigate the luminescence characteristics. The OLED device containing NMTI - NPB luminescent layer and hole transport layer (HTL) showed superior characteristics compared to NMTI-Py. The device exhibited maximum EL emission at 502 nm and 550 nm, CIE coordinates (0.38, 0.48) and a luminance efficiency of 2.06 cd/A. Also, when NMTI and NMTI-An were used as HTL instead of NPB, the device containing NMTI-An emitter showed 2.67 cd/A and 2.29 cd/A in luminescence efficiency.

To study the impedance characteristics of a fluorescent OLED according to the device structure, we fabricated Device 1 using ITO / NPB / Alq3 / Liq / Al, Device 2 using ITO / 2-TNATA / NPB / Alq3 / Liq / Al, and Device 3 using ITO / 2-TNATA / NPB / SH-1:BD / Alq3 / Liq / Al. The current density and luminance decreased with an increasing number of layers of the organic thin films in the order of Device 1, 2, 3, whereas the current efficiency increased. From the Cole-Cole plot at a driving voltage of 6 V, the maximum impedance values of Devices 1, 2, and 3 were respectively 51, 108, and 160 Ω just after device fabrication. An increase in the impedance maximum value is a phenomenon caused by the charge mobility and the resistance between interfaces. With the elapse of time after the device fabrication, the shape of the Cole-Cole plot changed to a form similar to 0 or a lower voltage due to the degradation of the device. As a result, we were able to see that an impedance change in an OLED reflects the characteristics of the degradation and the layer.

The organic light-emitting diodes are fabricated with six anthracene derivatives containing simple substituents such as phenyl or naphthyl group. The device structure is as in the following: Indium tin oxide (ITO) (180 nm)/4,4-4,4`,4``-tris[N-(1-naphthyl)-Nphenylamino] triphenylamine (2-TNATA) (30 nm)/4,4`-bis[N-(1-naphthyl)-N-phenyl-1-amino] biphenyl (NPB) (20 nm)/Emitting compound (30 nm)/2,2′,2"- (1,3,5-Benzinetriyl)-tris (1-phenyl-1-H–benz-imidazole) TPBi (40 nm)/lithium quinolate (Liq) (2 nm)/Al (100 nm). In the emitting layer the anthracene derivatives are used without any dopant. All the six devices show blue emissions. Among the tested diodes, the one with 9-(2-naphthyl)-10-(p-tolyl) anthracene (2-NTA) exhibited luminous efficiency, power and external quantum efficiencies of 3.26 cd/A, 0.98 lm/A, 2.8 % at 20 mA/cm .

The global small and mid-sized display market is changing from thin film transistor-liquid crystal display to organic light emitting diode (OLED). Reflecting these market conditions, the domestic and overseas display panel industry is making great effort to innovate OLED technology and incease productivity. However, current OLED production technology has not been able to satisfy the quality requirement levels by customers, as the market demand for OLED is becoming more and more diversified. In addition, as OLED panel production technology levels to satisfy customers’ requirement become higher, product quality problems are persistently generated in OLED deposition process. These problems not only decrease the production yield but also cause a second problem of deteriorating productivity. Based on these observations, in this study, we suggest TRIZ-based improvement of defects caused by glass pixel position deformation, which is one of quality deterioration problems in small and medium OLED deposition process. Specifically, we derive various factors affecting the glass pixel position shift by using cause and effect diagram and identify radical reasons by using XY-matrix. As a result, it is confirmed that glass heat distortion due to the high temperature of the OLED deposition process is the most influential factor in the glass pixel position shift. In order to solve the identified factors, we analyzed the cause and mechanism of glass thermal deformation. We suggest an efficient method to minimize glass thermal deformation by applying the improvement plan of facilities using contradiction matrix in TRIZ. We show that the suggested method can decrease the glass temperature change by about 23% through an experiment.

다양한 질량비의 SiO2, Hollow SiO2 나노 파티클들을 Poly(methylmethacrylate) (PMMA) 용액에 분산하여 OLED 내부 광추출용 산란층을 제작 하였다. 구형의 실리카 나노 파티클들은 약 300 nm의 평균 입자 사이즈를 나타내었다. 실리카 나노 파티클 고분자 분산액은 스핀코팅을 통하여 기판위에 코팅 되어 제작되었다. 내부가 비어 있지 앉은 SiO2 나노 파티클 산란층의 경우 높은 산란 특성을 나타내었으며 (30wt%, 588 nm, Haze 0.37) Hollow SiO2 나 노 파티클의 경우 상대적으로 낮은 산란 특성을 나타내는 것을 확인할 수 있었다 (30 wt%, 588 nm, Haze 0.16). 하 지만 Hollow SiO2 나노 입자의 경우 매우 낮은 back-scattering으로 인한 높은 투과 특성을 나타내었다 (30 wt%, 588 nm, 85%). 또한 입자의 함량 증가에 따른 투과도의 감소와 산란의 증가 비가 상대적으로 매우 높음을 확인할 수 있었다.

유기 발광 다이오드(OLED)는 차세대 조명으로 많은 관심을 받고 있으며, 디스플레이로서의 상용화에 이미 성공하였고, 대체 조명 시장에까지 그 영역을 넓혀가고 있다. OLED의 급격한 기술 발전에도 불구하고, OLED의 유 기층/투명전극과 기판에서 발생하는 내부 전반사에 의해서 일반적인 OLED의 외부 광자 효율은 현재 20~30% 정도에 머무르고 있는 실정이다. 따라서, 고효율의 OLED의 구현을 위해서는 고성능의 광추출 구조의 개발이 절실히 필요하 다. 내부 광추출 구조를 소자에 적용하기 위해서는 많은 어려움이 있으며, 특히 소자의 누설전류를 방지하기 위해서 광추출 구조의 표면 거칠기를 최소화하는 것이 매우 중요하다. 본 연구에서는 ZnO 나노파티클-투명 고분자 복합 구 조의 광추출 구조를 쉬운 제작 방법으로 구현하였으며, 나노파티클의 분산에 따른 광추출 구조의 광학적 특성 및 표 면 구조의 영향에 대해서 알아보았다.

분산된 유전입자를 가지는 OLED는 입자의 표면 상태에 의하여 새로운 부가적인 결과를 나타내게 된다. 본 논문에서는 유전입자가 분산된 Polyfluorene (PFO) 발광 층과 두 개의 전극을 가지는 간단한 구조의 PFO-base OLED를 제작하고 분산된 나노입자들이 분산을 위한 제작공정에서 필수적으로 발생하는 표면상태변화가 소자에 어떠한 영향을 미치는지 알아보았다. Spin-coating 공법으로 제작된 PFO-base OLED는 극소량 첨가된 유전입자의 고른 분산을 위한 공정이 필요하며 이 공정으로 인해 입자의 표면에서 scratch 가 증가 하고 , 또한 입자의 분쇄가 이루어 지기도 한다. 교반 시간의 증가는 표면 scratch와 입자의 분쇄를 증가시키게 되고, 이는 입자크기의 감소와 분쇄된 입 자끼리의 응집을 증가시켜 소자의 electrical conditioning을 변화시켰고 나아가 발광 특성에 영향을 주었다. 실험 결과 9시간 정도의 교반시간에서 입자의 표면전하로 인해 electrical conditioning이 개선되고 이로서 소자의 발광휘도가 최대 2.5배 이상 증가하였다. 반면에 교반시간이 증가하면 소자의 전반적인 휘도는 다소 감소하는 결과를 나타내었다. 이는 표면전하 증가와 함께 분산이 고르게 되지 않기 때문인 것으로 생각된다.

Chrysene 및 Pyrene 유도체를 합성하였고, 열적 안정성은 phenanthrene기를 도입한 BC6이 mp: 406oC 이었다. 용액상태에서 Host-Dopant 시스템으로 각각의 분광특성을 측정하여 NP5-BC1, NP5-BC5 system이 우수한 결과를 얻을 수 있었고, 이들의 밴드갭은 3.04, 2.66, 2.67eV 이었다.

Polyfluorene (PFO) 발광 층과 두 개의 전극으로 이루어진 단순한 구조의 PFO polymer base OLED를 기본으로 강유전성의 BaTiO₃나노입자를 PFO 발광 층 내에 분산시킨 OLED 소자를 제작하여 분산된 강유전체 나노입자의 영향과 동작에 미치는 역할을 알아보았다. 140 nm 두께의 발광 층 내부에 대비 80 nm의 크기를 가지는 강유전성 BaTiO₃입자들은 OLED 동작 중에 인가전압에 의해 대전되어 전기쌍극자를 형성하고, PFO의 발광 층 내로 주입된 전자 및 정공들과 각각 coulomb force에 기인하는 상호작용을 하여 OLED 소자의 전류밀도가 증가하는 결과를 나타내었다. PFO의 질량대비 10 wt% 에 해당하는 소량을 첨가하였을 때에 OLED소자의 문턱전압이 약 2 V 감소하는 개선된 결과를 나타내었다. 또한 유전체가 첨가되지 않은 소자에 비하여 휘도가 약 2 배 증가한 결과를 나타내었다.

본 연구에서 7,7'-(2,2'dimethoxy-1,1'-binaphthyl-3,3'-diyl) bis(4-(thiophen-2-yl) benzo[e] [1,2,5] thiadiazole (TBT) 라는 binaphthyl기를 기반으로 가지는 녹색 도판트 물질을 합성하였다. 추가적으로 인광 발광 물질인 iridium(III)bis[(4,6-di-fluoropheny)-pyridinato -N,C2]picolinate (FIrpic)을 홀 수송용 호스트 물질인 N,N'-dicarbazolyl-3,5-benzene (mCP)에 도핑하고, TBT와 bis(2-phenylquinolinato)-acetylacetonate iridium(III) (Ir(pq)2acac)를 전자 수송용 호스트 물질인 1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene (TPBi)에 도핑하여 백색 빛을 발광하는 white organic light emitting diode (OLED)를 제작하였다. TBT를 사용하여 제작한 white OLED의 최대발광 효율과 외부 양자 효율은 각각 5.94 cd/A 과 3.23%를 나타냄을 알 수 있었다. Commission Internationale de I'Eclairage (CIE) 색 좌표의 값은 1000 nit에서 (0.34, 0.36)을 띄면서 순백색을 구현함을 확인하였다.

청색 발광대역을 갖는 Polyfluorene Polymer(PFO) 베이스 Blue-OLED의 PFO Emitting layer에 YAG형광체를 분산시켜, Blue light와 Down-conversion 된 Yellow light를 얻고 이들의 보색혼합으로 백색광을 얻는 W-OLED 소자를 제작하였다. 소자의 기본구조는 5층의 적층구조를 가지며 cathode(Al)/YAG@PFO/TPD/TiOPc/Anode(ITO)의 단순한 구조로 기판유리를 제외하고 1000nm 이하의 두께로 제작이 가능한 초박막 구조의 W-OLED이다. YAG 형광체가 분산된 W-OLED의 전류밀도는 형광체가첨가되지 않은 경우에 비하여 약 2배 이상의 전류밀도증가를 나타내었다. 이는 첨가된 YAG 형광체의 표면전하에 기인한 것으로 생각된다. 전류밀도의 증가는 청색발광 휘도의 증가와 함께 down-conversion된 황색광이 증가하여 B+Y=White 보색 혼합된 백색광이 방출되었다. 적절한 동작을 위한 소자의 동작전압은 전류밀도 증가량의 변화율에서 주목할 만한 특이점이 나타나지 않는 전압범위인 15V-25V 구간으로 판단된다.

The compound of 2,6-Bis[(9-phenylcarbazolyl)ethenyl]naphthalene (BPCEN-1), 2-[6-1-Cyano-2-(9-phenylcarbazoly)vinylnaphthyl]-3-(9-phenylcarbazolyl)acrylonitrile (BPCEN-2), 2,6-Bis[4-(1-naphthy l)phenylamino styrenyl] naphthalene (BNPASN-1), 2-[6-1-Cyano-2-(naphthylphenylaminophenyl) vinylnaphthyl]-3-(naphthylphenylaminophenyl)acrylonitrile (BNPASN-2) was analyzed electrochemically and spectroscopically and can be obtained by bonding phenylcarbazolyl, naphthylphenylaminophenyl and -CN ligands to 2,7-naphthalene. The electrochemical and spectroscopic study resulted in the P-type (BPCEN-1, BNPASN-1) being changed to N-type (BPCEN-2, BNPASN-2) according to -CN bonding despite having the same structure. The value of band gap(Eg) was revealed to be small as HOMO had shifted higher and LUMO lower. The Eg value for naphthylphenylaminophenyl ligand was reduced because it has a smaller HOMO/LUMO value than that of phenylcarbazolyl from a structural perspective. The electrochemical HOMO/LUMO values for BPCEN-1, BPCEN-2, BNPASN-1, BNPASN-2 were measured to be 5.55eV / 2.83eV, 5.73eV / 3.06eV, 5.48eV / 2.78eV, and 5.53eV / 2.98eV, respectively. By -CN ligand, the UV max, Eg and PL max were shifted to longer wavelength in their spectra and the luminescence band could be also confirmed to be broad in the photoluminescence (PL) spectrum.

Simple and high efficiency green phosphorescent devices using an intermixed double host of 4, 4', 4"-tris(N-carbazolyl) triphenylamine [TCTA], 1, 3, 5-tris (N-phenylbenzimiazole-2-yl) benzene [TPBI], phosphorescent dye of tris(2-phenylpyridine)iridium(III) [Ir(ppy)3], and selective doping in the TPBI region were fabricated, and their electro luminescent characteristics were evaluated. In the device fabrication, layers of 70Å-TCTA/90Å-TCTA[0.5TPBI0.5/90Å-TPBI doped with Ir(ppy)3 of 8% and an undoped layer of 50Å-TPBI were successively deposited to form an emission region, and SFC137 [proprietary electron transporting material] with three different thicknesses of 300Å, 500Å, and 700Å were used as an electron transport layer. The device with 500Å-SFC137 showed the luminance of 48,300 cd/m2 at an applied voltage of 10 V, and a maximum current efficiency of 57 cd/A under a luminance of 230 cd/m2. The peak wavelength in the electroluminescent spectral and color coordinates on the Commission Internationale de I'Eclairage [CIE] chart were 512 nm and (0.31, 0.62), respectively.

The ACF(Anisotropic Conductive Film) is used for bonding Drive IC and OLED display device panel. If ACF bonding process is problem, a malfunction of line defect can occur. Because electric resistance increase between the panel and drive IC after a period of time, drive IC can not supply enough current to the panel. This paper is studied on a method of test for line defect.

According to the Korea Agency for Technology and Standards under the Commerce Ministry, OLED device's lifetime is defined 50% drop of luminance. OLED device is self-emitting operating device, that means it becomes different color between pixels under using environment. That's reason of the different luminance drop ratio & chromaticity coordinates shift ratio with time. The problem is there is not recovered after luminance drop and color shift. We can recognize the difference of color as image sticking. First we studied when human recognize the difference of color and second we apply the method of OLED device's lifetime test that's able to check different color between pixels.

According to the Korea Agency for Technology and Standards under the Commerce Ministry, OLED device's lifetime is defined 50% drop of luminance. OLED device is self-emitting operating device, that means it becomes different color between pixels under using environment. That's reason of the different luminance drop ratio & chromaticity coordinates shift ratio with time. The problem is there is not recovered after luminace drop and color shift. We can recognize the difference of color as image sticking. First we studied when human recognize the difference of color and second we apply the method of OLED device's lifetime test that's able to check different color between pixels

Display's life time is defined as the time of 50% luminance drop. It was used luminance and temperature as accelerated factor to accelerated lifetime at test. When it's working jule-heat is generated and device's temperature is growing as any temperature because OLED is self-luminance display device. So we decided temperature condition is 25, 70℃, and luminance condition is 60~300cd/m2 in test. It's assumed accelerated lifetime model by result of the test.