Recent discoveries of ferroelectric properties in ultrathin doped hafnium oxide (HfO2) have led to the expectation that HfO2 could overcome the shortcomings of perovskite materials and be applied to electron devices such as Fe-Random access memory (RAM), ferroelectric tunnel junction (FTJ) and negative capacitance field effect transistor (NC-FET) device. As research on hafnium oxide ferroelectrics accelerates, several models to analyze the polarization switching characteristics of hafnium oxide ferroelectrics have been proposed from the domain or energy point of view. However, there is still a lack of in-depth consideration of models that can fully express the polarization switching properties of ferroelectrics. In this paper, a Zr-doped HfO2 thin film based metal-ferroelectric-metal (MFM) capacitor was implemented and the polarization switching dynamics, along with the ferroelectric characteristics, of the device were analyzed. In addition, a study was conducted to propose an applicable model of HfO2-based MFM capacitors by applying various ferroelectric switching characteristics models.

본 연구에서는 강유전성 고분자를 이용하여 제작된 100 nm 이하 두께를 가지는 박막형 커페시터의 측정 주파수에 따른 분극 반전 특성을 측정, 분석하였다. 고정된 박막 두께에 대해, 인가되는 최고 전기장의 세기가 증가할수록 더 높은 항전계에서 분극 반전이 발생되었다. 고정된 최고 전기장에 대해, 박막의 두께에 무관하게 같은 항전계에서 분극 반전이 발생되었다. 모든 측정에서 로그스케일 전기장 및 로그스케일 주파수의 관계에서 약 0.12 ± 0.01의 비례 상수를 보였다. 결과적으로, 강유전체 고분자 커페시터가 40 nm 두께까지는 size effect 없이 일정한 분극 반전 특성을 보였다. 본 연구는 저전압 동작 고분자 메모리 소자의 동작 예측에 유용할 것이므로 저전압에서 동작 가능한 고분자 메모리 소자의 가능성을 보여준다.

The effects of Nb doping on the crystal structure, microstructure, and dielectric ferroelectric and piezoelectric properties of (Bi0.5Na0.5)0.935Ba0.065Ti(1-x)NbxO3-0.01SrZrO3 (BNBTNb-SZ, with x = 0, 0.01 and 0.02) ceramics have been investigated. X-ray diffraction patterns revealed that all ceramics have a pure perovskite structure with tetragonal symmetry. The grain size of the ceramics slightly decreased and a change in grain morphology from square to spherical shape was observed in the Nb-doped samples. The maximum dielectric constant temperature (Tm) increases with increasing amount of Nb; however, ferroelectric-relaxor transition temperature (TF-R) and maximum dielectric constant (εm) values decrease gradually. Nb addition disrupted the polarization hysteresis loops of the BNBT-SZ ceramics by leading a reduction in the remnant polarization coercive field and piezoelectric constant.

분산된 유전입자를 가지는 OLED는 입자의 표면 상태에 의하여 새로운 부가적인 결과를 나타내게 된다. 본 논문에서는 유전입자가 분산된 Polyfluorene (PFO) 발광 층과 두 개의 전극을 가지는 간단한 구조의 PFO-base OLED를 제작하고 분산된 나노입자들이 분산을 위한 제작공정에서 필수적으로 발생하는 표면상태변화가 소자에 어떠한 영향을 미치는지 알아보았다. Spin-coating 공법으로 제작된 PFO-base OLED는 극소량 첨가된 유전입자의 고른 분산을 위한 공정이 필요하며 이 공정으로 인해 입자의 표면에서 scratch 가 증가 하고 , 또한 입자의 분쇄가 이루어 지기도 한다. 교반 시간의 증가는 표면 scratch와 입자의 분쇄를 증가시키게 되고, 이는 입자크기의 감소와 분쇄된 입 자끼리의 응집을 증가시켜 소자의 electrical conditioning을 변화시켰고 나아가 발광 특성에 영향을 주었다. 실험 결과 9시간 정도의 교반시간에서 입자의 표면전하로 인해 electrical conditioning이 개선되고 이로서 소자의 발광휘도가 최대 2.5배 이상 증가하였다. 반면에 교반시간이 증가하면 소자의 전반적인 휘도는 다소 감소하는 결과를 나타내었다. 이는 표면전하 증가와 함께 분산이 고르게 되지 않기 때문인 것으로 생각된다.

The structural phase transformations of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-0.3PT) were studied using high resolution x-ray diffraction (HRXRD) as a function of temperature and electric field. A phase transformational sequence of cubic (C)→tetragonal (T)→rhombohedral (R) phase was observed in zero-field-cooled conditions; and a C→T→monoclinic (Mc)→ monoclinic (MA) phase was observed in the field-cooled conditions. The transformation of T to MA phase was realized through an intermediate Mc phase. The results also represent conclusive and direct evidence of a Mc to MA phase transformation in field-cooled conditions. Beginning from the zero-field-cooled condition, a R→MA→Mc→T phase transformational sequence was found with an increasing electric field at a fixed temperature. Upon removal of the field, the MA phase was stable at room temperature. With increasing the field, the transformation temperature from T to Mc and from Mc to MA phase decreased, and the phase stability ranges of both T and Mc phases increased. Upon removal of the field, the phase transformation from R to MA phase was irreversible, but from MA to Mc was reversible, which means that MA is the dominant phase under the electric field. In the M phase region, the results confirmed that lattice parameters and tilt angles were weakly temperature dependent over the range of investigated temperatures.

전도성 고분자 PFO(Polyfluorene)에 양전극 ITO와 음전극으로 AI 를 추가한 단순한 양극성 구조의 ITO/PFO/Al 소자를 제작하였다. PFO에 BaTIO₃나노세라믹스 분말을 중량비로 0wt%, 10wt%, 20wt% 와 30wt% 로 달리한 4종류의 시편에 만들고, Keithley 사의 2400 Sourcemeter를 이용하여 0V에서 21V까지 DC전압을 인가하면서 소자에 흐르는 전류량을 관찰하였다. 수 나노 크기의 BaTIO₃분말의 첨가는 PFO/AI 계면에서의 전위장벽을 감소시켜 Fowler-Nordheim Tunneling이 시작되는 전압이 BaTIO₃가 첨가되지 않은 시편의 경우에 비하여 7V에서 최대 10V가 낮아진 결과를 얻었다. 소자에 흐르는 최대 전류값은 인가 전압 DC21V일 때 BaTIO₃첨가량에 비례하여 4배에서 5.5배까지 증가하였다. BaTIO₃의 첨가효과는 20wt% 이상 첨가된 경우 효과가 포화되기 시작하여, 30wt%의 BaTIO₃를 첨가한 시편의 전류량은 오히려 감소하였고 전류주입도 어려워지는 상반된 결과를 얻었다. 이것은 첨가한 나노 분말의 표면전하가 만드는 미세전계의 영향이 인접한 거리에서 서로 중첩되어 전류의 흐름이 오히려 감소하는 결과를 보인 것을 판단된다. 이로서 강유전체가 첨가된 전도성 고분자/금속 계면의 I-V 특성은 나노 세라믹스 분말의 표면전하가 만드는 국소미세전계의 영향을 받아 Trap Charge Limited Current 모델에 부합하는 결과를 가짐을 알 수 있었다.

(Na, K) NbO3 thick film was successfully achieved using a sol-gel coating process with the addition of polyvinylpyrrolidone (PVP) to a metal alkoxide solution. The transparent coating solution, mixed with Nb:PVP = 1:1 in a molar ration, was synthesized by evaporating the solvent to over 62.5 wt%. Additive PVP increased the viscosity of the solution so that the coating thickness could be enhanced. The thickness of the (Na, K) NbO3 film assisted by PVP was ca. 320 nm at the time of deposition; this value is four times thicker than that of the sample fabricated without PVP. Also, due to PVP binding with the OH groups of the metal alkoxide, the condensation reaction in the film was suppressed. The crystalline size of the (Na, K) NbO3 films assisted by PVP was ca. 15 nm smaller than that of the film fabricated without PVP. After the sintering process at 700˚C, the (Na, K) NbO3 films were mainly composed of randomly oriented (Na, K) NbO3 phase of perovskite crystal structure, including a somewhat secondary phase of K2Nb4O11. However, by adding PVP, the content of the secondary phase became quite smaller than that of the sample without PVP. It was thought that the addition of PVP might have the effect of restraining the loss of potassium and that PVP could hold metalloxane by strong hydrogen bonding before complete decomposition. Therefore, the film thickness of the (Na, K) NbO3 films could be considerably advanced and made more crack-free by the addition of PVP.

The dielectric properties and phase transformation of poled <001>-oriented Pb(Mg1/3Nb2/3)O3-x%PbTiO3(PMN-x%PT) single crystals with compositions of x=20, 30, and 35mole% are investigated for orientations both parallel andperpendicular to the [001] poling direction. An electric-field-induced monoclinic phase was observed for the initial poled PMN-30PT and PMN-35PT samples by means of high-resolution synchrotron x-ray diffraction. The monoclinic phase appears from−25oC to 100oC and from −25oC to 80oC for the PMN-30PT and PMN-35PT samples, respectively. The dielectric constant (ε)-temperature (T) characteristics above the Curie temperature were found to be described by the equation(1/ε−1/εm)1/n=(T−Tm)/C, where εm is the maximum dielectric constant and Tm is the temperature giving εm, and n and C are constants that changewith the composition. The value of n was found to be 1.82 and 1.38 for 20PT and 35PT, respectively. The results of meshscans and the temperature-dependence of the dielectric constant demonstrate that the initial monoclinic phase changes to a singledomain tetragonal phase and a to paraelectric cubic phase. In the ferroelectric tetragonal phase with a single domain state, thedielectric constant measured perpendicular to the poling direction was dramatically higher than that measured in the paralleldirection. A large dielectric constant implies easier polarization rotation away from the polar axis. This enhancement is believedto be related to dielectric softening close to the morphotropic phase boundary.

The structure and dielectric properties of poled<001>-oriented 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-0.3PT) crystals have been investigated for orientations both parallel and perpendicular to the [001] poling direction. An electric field induced monoclinic phase was observed for the initial poled sample. The phase remained stable after the field was removed. A quite different temperature dependence of dielectric constant has been observed between heating and cooling due to an irreversible phase transformation. The results of mesh scans and temperature dependence of the dielectric constant demonstrate that the initial monoclinic phase changes to a single domain tetragonal phase at 370K and to a paraelectric cubic phase at 405K upon heating. However, upon subsequent cooling from the unpoled state, the cubic phase changes to a poly domain tetragonal phase and to a rhombohedral phase. In the ferroelectric tetragonal phase with a single domain state, the dielectric constant measured perpendicular to the poling direction was dramatically higher than that of the parallel direction. A large dielectric constant implies easier polarization rotation away from the polar axis. This enhancement is believed to be related to dielectric softening close to the morphotropic phase boundary and at the phase transition temperature.

Phase transition in ferroelectric polymer is very interesting behavior and has been widely studiedfor real device applications, such as actuators and sensors. Through the phase transition, there is structuralchange resulting in the change of electrical and optical properties. In this study, we fabricated the Febry-Perotinterferometer with the thin film of ferroelectric P(VDF-TrFE) 50/50mol% copolymer, and thermo-opticalproperties were investigated. The effective thermo-optical coefficient of P(VDF-TrFE) was obtained as 2.3~3.8×10-4/K in the ferroelectric temperature region (45oC~65oC) and 6.0×10-4/K in the phase transition temperatureregion (65oC~85oC), which is a larger than optical silica-fiber and PMMA. The resonance transmission peakof P(VDF-TrFE) with the variation of temperature showed hysteretic variation and the phase transitiontemperature of the polymer in heating condition was higher than in the cooling condition. The elimination ofthe hysteretic phase transition of P(VDF-TrFE) is necessary for practical applications of optical devices.

1mm-thick BLT ceramics were sintered in accordance with a bulk ceramic fabrication process. All XRD peaks detected in the sintered ceramics were indexed as the Bi-layered perovskite structure without secondary phases. Density was increased with increasing the sintering temperature up to and the maximum value was about 98% of the theoretical density. The remanent polarization (2Pr) value of BLT ceramic sintered at was approximately at the applied voltage of 4.5kV. From these results, a BLT ceramic target for plused laser deposition (PLD) system was successfully fabricated.