Reactive oxygen species (ROS) can be produced by interactions between sunlight and light-absorbing substances in natural water environments and can completely destroy various organic pollutants in waste water. In this study, we used graphene oxide modified Ag2Se nanoparticles to enhance photochemically generated oxygen (PGO) species activity. Surface area and pore volumes of the Ag2Se-graphene (Ag2Se-G) samples showed catastrophic decrease due to deposition of Ag2Se. The generation of reactive oxygen species was detected through the oxidation reaction of DPCI to DPCO. The photocurrent density and the PGO effect increase in the case of the use of modified graphene. The PGO effect of the graphene modified with Ag2Se composites increased significantly due to a synergetic effect between graphene and the Ag2Se nanoparticles. The photocatalytic activity of sample was evaluated by measuring the degradation of organic pollutants such as methylene blue (MB) and industrial dyes such as Texbrite BA-L (TBA) under visible light.

목 적: Ⅱ-Ⅲ2-Ⅵ4형 반도체 가운데 고용체 화합물에 대한 연구의 하나로 Ⅵ족인 S, Se를 상호 교환하여 성장시킨 ZnAl2Se3.6S0.4 고용체의 구조 및 광 발광 메카니즘을 규명하였고, 이로부터 광학적 energy band gap의 온도의존성과 기초적 열역학 함수를 추정고자 한다. 방 법: ZnAl2Se3.6S0.4 단결정은 수송매체로서 iodine을 이용한 화학수송법(CTR)으로 단결정을 성장시켰 다. 단결정을 성장시키기 위하여 시료 출발측을 950 ℃, 성장측을 850 ℃로 하여 7일간 성장시켰다. 기초 흡 수단 부근에서 에너지 띠 간격의 온도의존성을 구하기 위하여 저온장치가 부착된 UV-VIS-NIR spectrophotometer를 사용하여 광흡수 스펙트럼을 측정하였다. 광발광 특성은 광흡수 특성 측정에 사용하 였던 측정용 시편을 cryogenic system 의 cold finger 에 부착시키고, 여기 광원으로 325 ㎚의 He-Cd laser 를 사용하였으며, double-grating monochromator, data-mate control system, cryogenic system, PM tube 등으로 구성된 측정 system을 사용하여 측정하였다. 결과 및 고찰: ZnAl2Se3.6S0.4 단결정의 에너지 띠 간격과 온도의존성을 구하기 위하여 이들 단결정의 기 초 흡수단 영역인 320 ～ 420㎚ 파장영역과 13K ～ 289K 온도영역에서 광흡수 스펙트럼을 측정하였다. Varshni가 제안한 에너지 띠 간격의 온도의존성 특성에 대한 실험식에 잘 일치하였다. 측정된 energy gap(Eg)으로부터 열역학적 함수 물리량을 추정할 수 있었다. 또한 13K에서 측정한 광발광 스펙트럼에서 보 면 427㎚(2.904 )영역에서 비교적 넓고 세기가 강한 청색 발광 피크와 468㎚(2.648 )영역에서 세기가 약한 청색 발광 피크를 관측할 수 있었다. 결 론: ZnAl2Se3.6S0.4 단결정의 결정구조는 defect chacopyrite 구조였으며, 격자 상수는 a= 5.5563Å, c= 10.8324Å이었다. 또한 찌그러짐 인자값은 0.0504 이었다. 광학적 에너지 띠 간격의 온도 의존성을 규명하 였고, 이 때 Eg(0)=3.538(eV), α=2.02×10-3(eV/K), β=502.19(K)로 주어졌다. Energy band gap의 온도의 존성으로부터 entropy(SCV), heat capacity(CCV), enthalpy(HCV) 값을 추정 할 수 있었다. ZnAl2Se3.6S0.4 결 정의 광발광 특성은 비교적 넓고 세기가 강한 청색 발광 피크와 세기가 약한 청색 발광 피크를 관측할 수 있었 다. 이들 발광 전이기구는 두개의 주개 준위(SD1, DD1)와 한 개의 받개 준위(DA1)사이의 재결합에 의한 발광 메카니즘으로 설명된다.

The recent development of electro-optic devices and anticorrosion media has led to the necessity to investigate infrared optical systems with solid-solid interfaces of materials that often have the characteristic of amorphousness. One of the most promising classes of materials for those purposes seems to be the chalcogenide glasses. Chalcogenide glasses, based on the Ge-Sb-Se system, have drawn a great deal of attention because of their use in preparing optical lenses and transparent fibers in the range of 3~12 um. In this study, amorphous Ge-Sb-Se chalcogenide for application in an infrared optical product design and manufacture was prepared by a standard melt-quenching technique. The results of the structural, optical and surface roughness analysis of high purity Ge-Sb-Se chalcogenide glasses are reported after various annealing processes.

목 적: 화학수송법으로 성장시킨 Ga2Se3 및 Ga2Se3 : Co2+ 단결정의 광학적 에너지 띠 간격 energy band gap의 온도의존성을 규명하고, 이로부터 기초적 열역학 함수를 추정고자 한다. 방 법: gallium(99.9999 %, 2 mol), selenium(99.9999 %, 3 mol), cobalt(99.99 %, 0.1 mol %) 그리고 수송물질로 iodine(99.99 %, 6 mg/cm3)을 함께 석영관에 넣고 내부를 5×10-6 torr로 유지하면서 봉입하여 성장용 ampoule을 만들었다. 성장용 ampoule을 2단 전기로의 중앙에 위치시키고, 결정 성장측의 잔류불순 물을 깨끗이 제거한 후, 시료 출발측을 890 ℃, 성장측을 780 ℃로 6일간 유지하여 단결정을 성장시켰다. 기초 흡수단 부근에서 에너지 띠 간격의 온도의존성을 구하기 위하여 저온장치(Air Products, SH-4)가 부 착된 UV-VIS-NIR spectrophotometer(Hitachi, U-3501)를 사용하여 광흡수 스펙트럼을 측정하였다. 결과 및 고찰: Ga2Se3 및 Ga2Se3 : Co2+ 단결정들의 광흡수 스펙트럼은 순수한 Ga2Se3 단결정의 경우 570 nm영역에서, Ga2Se3 : Co2+ 단결정의 경우 594 nm영역에서 광흡수가 급격히 증가하여 cobalt를 첨가한 단 결정의 기초 흡수단이 장파장 측으로 이동됨을 볼 수 있었다. 또한 에너지 띠 간격의 온도의존성은 Varshni 가 제안한 실험식으로부터 구하였다. 결 론: 성장된 단결정의 구조는 cubic구조이었고, 이들의 격자상수 값은 Ga2Se3 및 Ga2Se3 : Co2+ 단결정 들에 대하여 각각 a = 5.442 Å, a = 5.672 Å이었다. 광흡수 스펙트럼으로부터 구한 optical energy band gap(Eg)의 band구조는 직접 전이형이었고, 에너지 띠 간격의 온도의존성은 Varshni방정식이 잘 적용되었 다. 이때 구한 상수 값은 Ga2Se3 단결정의 경우 Eg(0) = 2.177 eV, α= 7.8×10-4eV/K, β= 378 K로 주어 지고, Ga2Se3 : Co2+단결정의 경우 Eg(0) = 2.089 eV, α= 1.20×10-3 eV/K, β= 349 K로 주어졌다. 이들 값 으로부터 구한 에너지 띠 간격의 온도의존성으로부터 열역학 함수인 entropy(SCV), heat capacity(CCV), enthalpy(HCV) 값을 추정할 수 있었다.

The recent rise in applications of thermoelectric materials has attracted interest in studies toward the fabrication of thermoelectric materials using mass production techniques. In this study, we successfully fabricate n-type Bi2Te2.7Se0.3 material by a combination of mass production powder metallurgy techniques, gas atomization, and spark plasma sintering. In addition, to examine the effects of hydrogen reduction in the microstructure, the thermoelectric and mechanical properties are measured and analyzed. Here, almost 60% of the oxygen content of the powder are eliminated after hydrogen reduction for 4 h at 360°C. Micrographs of the powder show that the reduced powder had a comparatively clean surface and larger grain sizes than unreduced powder. The density of the consolidated bulk using as-atomized powder and reduced atomized powder exceeds 99%. The thermoelectric power factor of the sample prepared by reduction of powder is 20% better than that of the sample prepared using unreduced powder.

This paper presents the impact of partial shading on CuInxGa(1-x)Se2(CIGS) photovoltaic(PV) modules with bypass diodes. When the CIGS PV modules were partially shaded, the modules were under conditions of partial reverse bias. We investigated the characterization of the bypass diode and solar cell properties of the CIGS PV modules when these was partially shaded, comparing the results with those for a crystalline silicon module. In crystalline silicon modules, the bypass diode was operated at a partial shade modules of 1.67 % shading. This protected the crystalline silicon module from hot spot damage. In CIGS thin film modules, on the other hand, the bypass diode was not operated before 20 % shading. This caused damage because of hotspots, which occurred as wormlike defects in the CIGS thin film module. Moreover, the bypass diode adapted to the CIGS thin film module was operated fully at 60% shading, while the CIGS thin film module was not operated under these conditions. It is known that the bypass diode adapted to the CIGS thin film module operated more slowly than that of the crystalline silicon module; this bypass diode also failed to protect the module from damage. This was because of the reverse saturation current of the CIGS thin film, 1.99 × 10−5 A/cm2, which was higher than that of crystalline silicon, 8.11 × 10−7 A/cm2.

목 적 : 초급성기 뇌경색의 진단과 뇌종양의 진단 및 치료의 과정를 평가하는데 유용한 확산강조 자기공명 영상은 인체 내 세포의 미시적인 확산운동의 차이를 영상의 대조도 나타내기 위해서 초고속 영상 기법인 EPI sequence를 사용한다. 하지만 인체의 해부학적 자화감수성 차이는 고속영상기법에서 영상의 왜곡과 artifact를 발생시켜 영상의 진단적 가치를 떨어뜨린다. 이에 본 논문은 자체 제작한 phantom을 이용하여 EPI 기법에 기인한　확산강조영상의 영상왜곡과 artifact의 특성을 알아보고 그 감소방안을 알아보자 하였다. 대상 및 방법 : Brain DWI 검사 시 artifact가 자주 발생하는 부위인 sphenoid sinus와 brain stem의 해부학적 구조를 모방한 phantom을 제작하였다. Single shot SE EPI sequence를 이용하여 phantom 영상을 획득하였다. 영상획득 시 phase encoding 방향과 fat shift 방향을 변경하여 영상 내의 artifact의 발생 양상과 그 변화에 대해서 알아보았다. 또한 SENSE factor 1에서 5까지 변경하고, RFOV를 100%에서 60%까지 10%씩 줄여가면서 artifact의 발생기전과 감소방법에 대해서 알아보았다. 사용된 장비는 Philips medical system의 Achieva TX 3.0T를 사용하였고, 신호수집 코일은 8 channel sense head coil을 사용하였다. Scan parameter는 FOV 256mm, measurement matrix 128×128, slice thickness 2mm, gap, 0mm 총 74개의 단면 영상을 획득하였다. 결 과 : EPI 기법으로 기인한 자화감수성 artifact와 영상왜곡은 영상단면의 phase encoding 방향을 따르고, 하나의 단면 내에서는 낮은 주파수쪽으로 이동하였으며, 또한 slice selection gradient에 따라서도 변화하였다. 확산운동의 민감성에 관여하는 확산경사자장의 세기는 artifact의 발생과 크기에 관계하지 않고 영상의 SNR과 관계하였다. 자화감수성 artifact의 감소방안은 sensitivity encoding, RFOV 기법과 같은 수집하는 영상 신호의 숫자를 감소시키는 기법을 통해서 구현할 수 있었지만, 이에 따른 SNR의 저하와 추가적인 artifact가 발생하였다. 따라서 임상에서 EPI sequence에 기인한 artifact의 감소를 목적으로 사용한다면, artifact 발생을 고려해 선택적으로 적용해야 할 것으로 생각된다. 결 론 : 최근 확산강조영상은 뇌 질환에서 뿐만 아니라 인체의 다른 장기의 질환을 진단하고 치료하는데 매우 유용하게 사용되고 있다. 본 연구를 통해서 확산강조 자기공명영상에서 발생하는 artifact의 발생기전 알아보고 그 감소방안을 찾을 수 있었다. 본 논문의 결과를 활용하여 임상에서 확산강조 자기공명영상을 획득한다면, 보다 진단적 가치가 높은 영상을 만들어 낼 수 있을 것으로 사료된다.

To realize high-performance thin film solar cells, we prepared CIGS by the co-evaporation technique on both sodalime and Corning glass substrates. The structural and efficient properties were investigated by varying the thickness of the Mo:Na layer, where the total thickness of the back contact was fixed at 1μm. As a result, when the Mo:Na thickness was 300 nm on soda-lime glass, the measured Na content was 0.28 %, the surface morphology was a plate-like compact structure, and the crystallinity by XRD showed a strong peak of (112) preferential orientation together with relatively intense (220) and (204) peaks as the secondary phases influenced crystal formation. In addition, the substrates on soda-lime glass effected the lowest surface roughness of 2.76 nm and the highest carrier density and short circuit current. Through the optimization of the Mo:Na layer, a solar conversion efficiency of 11.34% was achieved. When using the Corning glass, a rather low conversion efficiency of 9.59% was obtained. To determine the effects of the concentration of sodium and in order to develop a highefficiency solar cells, a very small amount of sodium was added to the soda lime glass substrate.

A stoichiometric mixture of evaporating materials for ZnAl2Se4 single-crystal thin films was prepared in a horizontalelectric furnace. These ZnAl2Se4 polycrystals had a defect chalcopyrite structure, and its lattice constants were a0=5.5563Åand c0=10.8897Å.To obtain a single-crystal thin film, mixed ZnAl2Se4 crystal was deposited on the thoroughly etched semi-insulating GaAs(100) substrate by a hot wall epitaxy (HWE) system. The source and the substrate temperatures were 620oCand 400oC, respectively. The crystalline structure of the single-crystal thin film was investigated by using a double crystal X-ray rocking curve and X-ray diffraction ω-2θ scans. The carrier density and mobility of the ZnAl2Se4 single-crystal thin filmwere 8.23×1016cm−3 and 287m2/vs at 293K, respectively. To identify the band gap energy, the optical absorption spectra ofthe ZnAl2Se4 single-crystal thin film was investigated in the temperature region of 10-293K. The temperature dependence ofthe direct optical energy gap is well presented by Varshni's relation: Eg(T)=Eg(0)−(αT2/T+β). The constants of Varshni'sequation had the values of Eg(0)=3.5269eV, α=2.03×10−3eV/K and β=501.9K for the ZnAl2Se4 single-crystal thin film.The crystal field and the spin-orbit splitting energies for the valence band of the ZnAl2Se4 were estimated to be 109.5meVand 124.6meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicatethat splitting of the ∆so definitely exists in the Γ5 states of the valence band of the ZnAl2Se4/GaAs epilayer. The threephotocurrent peaks observed at 10K are ascribed to the A1-, B1-exciton for n=1 and C21-exciton peaks for n=21.

Cu2ZnSn(Sx,Se1-x)4 (CZTSSe) thin films were prepared by sulfurization of evaporated precursor thin films. Precursor was prepared using evaporation method at room temperature. The sulfurization was carried out in a graphite box with S powder at different temperatures. The temperatures were varied in a four step process from 520˚C to 580˚C. The effects of the sulfurization temperature on the micro-structural, morphological, and compositional properties of the CZTSSe thin films were investigated using X-ray diffraction (XRD), Raman spectra, field emission scanning electron microscopy (FE-SEM), and transmission electron microscopy (TEM). The XRD and Raman results showed that the sulfurized thin films had a single kesterite crystal CZTSSe. From the FE-SEM and TEM results, the Mo(Sx,Se1-x)2 (MoSSe) interfacial layers of the sulfurized CZTS thin films were observed and their thickness was seen to increase with increasing sulfurization temperature. The microstructures of the CZTSSe thin films were strongly related to the sulfurization temperatures. The voids in the CZTSSe thin films increased with the increasing sulfurization temperature.

The quantum dots (QD) have unique electrical and optical properties due to quantum dot confinement effect. The optical properties of QDs are decided by various synthesis conditions. In a prior QDs study, a study on the QDs size with synthesis condition such as synthesis time and temperature is being extensively researched. However, the research on QDs size with composition ratio has hitherto received scant attention. In order to evaluate the ratio dependence of CdSe crystal, synthesis ratio of Se precursor is changed from 16.7 mol%Se to 44 mol%Se. As the increasing Se ratio, the band gap was increased. This is caused by red shift of emission. We confirmed optical property of CdSe QDs with composition ratio.

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A high-quality CIGS film with a selenization process needs to be developed for low-cost and large-scale production. In this study, we used Cu2In3, CuGa and Cu2Se sputter targets for the deposition of a precursor. The precursor deposited by sputtering was selenized in Se vapor. The precursor layer deposited by the co-sputtering of Cu2In3, CuGa and Cu2Se showed a uniform distribution of Cu, In, Ga, and Se throughout the layer with Cu, In, CuIn, CuGa and Cu2Se phases. After selenization at 550˚C for 30 min, the CIGS film showed a double-layer microstructure with a large-grained top layer and a small-grained bottom layer. In the AES depth profile, In was found to have accumulated near the surface while Cu had accumulated in the middle of the CIGS film. By adding a Cu-In-Ga interlayer between the co-sputtered precursor layer and the Mo film and adding a thin Cu2Se layer onto the co-sputtered precursor layer, large CIGS grains throughout the film were produced. However, the Cu accumulated in the middle of CIGS film in this case as well. By supplying In, Ga and Se to the CIGS film, a uniform distribution of Cu, In, Ga and Se was achieved in the middle of the CIGS film.

The present study focused on the synthesis of Bi-Te-Se-based powder by an oxide-reduction process, and analysis of the thermoelectric properties of the synthesized powder. The phase structure, chemical composition, and morphology of the synthesized powder were analyzed by XRD, EPMA and SEM. The synthesized powder was sintered by spark plasma sintering. The thermoelectric properties of the sintered body were evaluated by measuring its Seebeck coefficient, electrical resistivity, and thermal conductivity. powder was synthesized from a mixture of , , and powders by mechanical milling, calcination, and reduction. The sintered body of the synthesized powder exhibited n-type thermoelectric characteristics. The thermoelectric properties of the sintered bodies depend on the reduction temperature. The Seebeck coefficient and electrical resistivity of the sintered body were increased with increasing reduction temperature. The sintered body of the powder synthesized at showed about 0.5 of the figure of merit (ZT) at room temperature.

Cu(In, Ga)Se2 (CIGS) precursor films were electrodeposited on Mo/glass substrates in acidic solutions containingCu2+, In3+, Ga3+, and Se4+ ions at −0.6V (SCE) and pH 1.8. In order to induce recrystallization, the electrodepositedCu1.00In0.81Ga0.09Se2.08 (25.0at.% Cu+20.2at.% In+2.2at.% Ga+52.0at.% Se) precursor films were annealed under a highSe gas atmosphere for 15, 30, 45, and 60 min, respectively, at 500oC. The Se amount in the film increased from 52at.% to62at.%, whereas the In amount in the film decreased from 20.8at.% to 9.1at.% as the annealing time increased from 0 (as-deposited state) to 60 min. These results were attributed to the Se introduced from the furnace atmosphere and reacted withthe In present in the precursor films, resulting in the formation of the volatile In2Se. CIGS precursor grains with a cauliflowershape grew as larger grains with the CuSe2 and/or Cu2-xSe faceted phases as the annealing times increased. These faceted phasesresulted in rough surface morphologies of the CIGS films. Furthermore, the CIGS layers were not dense because the emptyspaces between the grains were not removed via annealing. Uniform thicknesses of the MoSe2 layers occurred at the 45 and60 min annealing time. This implies that there was a stable reaction between the Mo back electrode and the Se diffused throughthe CIGS film. The results obtained in the present research were sufficiently different from comparable studies where therecrystallization annealing was performed under an atmosphere of Ar gas only or a low Se gas pressure.

In order to make a (CZTSe) sputtering target sintered for solar cell application, synthesis of CZTSe compound by solid state reaction of Cu, Zn, Sn and Se mixed powders and effects of ball milling condition on sinterability such as ball size, combination of ball size, ball milling time and sintering temperature, was investigated. As a result of this research, sintering at after ball milling using mixed balls of 1 mm and 3 mm for 72 hours was the optimum condition to synthesis near stoichiometric composition of and to prepare sintered pellet with high density relatively.

Bistrifluron은 IGR계 살충제이며 나비목 해충의 알에 대한 부화억제 및 유충 생 육단계에서 Chitin 생합성을 저해하여 치사시킨다. Etofenprox는 합성 Pyrethroid 계통 살충제이며 곤충의 신경세포에 영향을 미치며 이온통로를 교란시켜 곤충을 치사시킴으로서 살충활성이 빠르게 나타난다. 본 연구는 사과, 복숭아, 자두 등의 과원에서 신초 및 과실을 직접 가해하여 생산 량 및 품질저하에 큰 영향을 미치는 복숭아순나방(Grapholita molesta)과 복숭아 심식나방(Carposina sasakii)에 대하여 다른 작용기작을 이용한 혼합 살충제 Bstrifluron+Etofenprox 25% SE의 방제효과를 확인하고자 수행하였다. 경북지역 의 사과와 자두 과원에서 페로몬트랩을 이용하여 복숭아순나방과 복숭아심식나방 의 1세대 성충 다발생기를 확인하였다. 복숭아순나방을 대상으로 성충 다발생기 부터 7일 간격으로 2회 경엽처리하였고, 최종약제처리 8일과 18일 후 피해 신초를 조사하였다. 복숭아심식나방을 대상으로 성충 발생초기부터 10일 간격으로 3회 경엽처리하였고, 최종약제처리 9일 후 피해과수를 조사하였다. Bistrifluron+Etofenprox SE는 복숭아순나방에 대하여 사과 과원에서 100%와 92.5%의 방제효과를 확인하 였고, 자두 과원에서 100%의 우수한 방제효과을 확인하였다. 복숭아심식나방에 대하여 자두 과원에서 84%의 방제효과를 확인하였다. 본 연구결과 Bistrifluron+Etofenprox SE는 복숭아순나방과 복숭아심식나방의 방제약제로 활용될 수 있을 것이다.