Zinc tin oxide (ZTO) thin films were deposited using atomic layer deposition (ALD) to ensure precise thickness control and uniformity. However, the low-temperature processing of ZTO often results in increased defect states, leading to degraded electrical performance. To address this issue, metal capping layers (Al or Au) were added to the ZTO active layer. The capping layers modulate electron energy levels at the interface, increase carrier density, and reduce interface traps, thereby improving electrical properties. Aluminum (Al) and gold (Au) were evaluated for their impact on key performance metrics, including electron mobility (μsat), threshold voltage (VT), subthreshold swing (SS), and on/off current ratio (ION/OFF). Results show that Al-capped ZTO thin-film transistors (TFTs) exhibited enhanced performance due to the lower work function of Al (4.0 eV), which facilitates electron injection and reduces contact resistance. In contrast, Au-capped ZTO TFTs showed decreased performance due to electron depletion caused by the higher work function of Au (5.1 eV). Optical analyses, including UPS and UV-Vis, revealed the band structure and work function of the ZTO thin films. This study concludes that the choice of capping material and its design parameters play a critical role in optimizing TFT performance, offering valuable insights for the development of next-generation high performance TFT devices.

ZnO/Cu/ZnO (ZCZ) thin films were deposited at room temperature on a glass substrate using direct current (DC) and radio frequency (RF, 13.56 MHz) magnetron sputtering and then the effect of post-deposition electron irradiation on the structural, optical, electrical and transparent heater properties of the films were considered. ZCZ films that were electron beam irradiated at 500 eV showed an increase in the grain sizes of their ZnO(102) and (201) planes to 15.17 nm and 11.51 nm, respectively, from grain sizes of 13.50 nm and 10.60 nm observed in the as deposited films. In addition, the film’s optical and electrical properties also depended on the electron irradiation energies. The highest opto-electrical performance was observed in films electron irradiated at 500 eV. In a heat radiation test, when a bias voltage of 18 V was applied to the film that had been electron irradiated at 500 eV, its steady state temperature was about 90.5 °C. In a repetition test, it reached the steady state temperature within 60 s at all bias voltages.

Recently, the electron transport layer (ETL) has become one of the key components for high-performance perovskite solar cell (PSC). This study is motivated by the nonreproducible performance of ETL made of spin coated SnO2 applied to a PSC. We made a comparative study between tin oxide deposited by atomic layer deposition (ALD) or spin coating to be used as an ETL in N-I-P PSC. 15 nm-thick Tin oxide thin films were deposited by ALD using tetrakisdimethylanmiotin (TDMASn) and using reactant ozone at 120 °C. PSC using ALD SnO2 as ETL showed a maximum efficiency of 18.97 %, and PSC using spin coated SnO2 showed a maximum efficiency of 18.46 %. This is because the short circuit current (Jsc) of PSC using the ALD SnO2 layer was 0.75 mA/cm2 higher than that of the spin coated SnO2. This result can be attributed to the fact that the electron transfer distance from the perovskite is constant due to the thickness uniformity of ALD SnO2. Therefore ALD SnO2 is a candidate as a ETL for use in PSC vacuum deposition.

Owing to the great demand for portable and wearable chemical sensors, the development of all-solid-state potentiometric ion sensors is highly desirable considering their simplicity and stability. However, most ion sensors are challenged by the penetration of water and gas molecules into ion-selective membranes, causing unstable and undesirable sensing performances. In this study, a hydrophobic ionic liquid-modified graphene (Gr) sheet was prepared using a fluid dynamics-induced exfoliation and functionalization process. The high hydrophobicity and electrical double-layer capacitance of Gr make it a potential solid-state ion-to-electron transducer for the development of potentiometric sodium-ion ( Na+) sensors. The as-prepared Na+ sensors effectively prevented the formation of the water layer and penetration of gas species, resulting in stable and high sensing performances. The Na+ sensors showed a Nernstian sensitivity of 58.11 mV/[Na+] with a low relative standard deviation (0.46), fast response time (5.1 s), good selectivity (K < 10− 4), and good durability. Furthermore, the Na+ sensor demonstrated its feasibility in practical applications by measuring accurate and reliable ion concentrations of artificial human sweat and tear samples, comparable to a commercial ion meter.

This study investigated durian (Durio zibethinus) peels to produce powdered activated carbon (DPAC). The influence of process variables such as carbonization temperature, activation time, contact time, CO2 flow rate, and adsorption dosage was optimized using response surface methodology (RSM). A six-factor and two levels Box–Behnken design (BBD) was used to optimize the parameters. The independent variables were activation temperature (°C), duration (min), CO2 flow rate during the activation process (L/min), irradiation of adsorbent (kGy), irradiation duration (min), and adsorbent dosage (g) while phenol removal (mg/L) was the dependent variable (response). Following the observed correlation coefficient values, the design was fitted to a quadratic model (R2 = 0.9896). The optimal removal efficiency (97.25%) was observed at an activation temperature of 900 °C, activation time of 30 min, CO2 flow rate of 0.05 L/min, irradiation dose of 100 kGy, contact time of 35 min and adsorption dosage of 0.75 g. The optimal DPAC showed a BET surface of 281.33 m2/ g. The removal efficiency was later compared with a commercially available activated carbon which shows a 98.56% phenol removal. The results show that the durian peel could be an effective precursor for making activated carbon for phenol removal, and irradiation can significantly enhance surface activation.

Thin-film shape technology is recognized for its core technology to enhance the technology of LCD, PDP, semiconductor manufacturing processes, hard disks and optical disks, and is widely used to form coated thin films of products. In addition, resistance (electron beam filament) technology for heating is used to manufacture filament for ion implants used in semiconductor manufacturing processes. By establishing an electronic beam filament production system and developing seven specifications of electronic beam filament, it is contributing to improving trade dynamics and increasing exports to Japan through localized media of theoretical imports to domestic companies. In this study, CAE analysis was performed after setting electron beam filament specification and development objectives, facilities and fabrication for electron beam filament production, electron beam filament JIG & fixture design and fabrication followed by electron beam filament prototype. Then, the automation and complete inspection equipment of the previously developed electronic beam filament manufacturing facilities was developed and researched to mass-produce them, to analyze and modify prototypes, design and manufacture automation facilities, and finally, to design and manufacture the complete inspection equipment. In this paper, design and manufacture of electronic beam filament total inspection equipment for mass production were dealted with.

Thin-film shape technology is recognized for its core technology to enhance the technology of LCD, PDP, semiconductor manufacturing processes, hard disks and optical disks, and is widely used to form coated thin films of products. In addition, resistance (electron beam filament) technology for heating is used to manufacture filament for ion implants used in semiconductor manufacturing processes. By establishing an electronic beam filament production system and developing seven specifications of electronic beam filament, it is contributing to improving trade dynamics and increasing exports to Japan through localized media of theoretical imports to domestic companies. In this study, CAE analysis was performed after setting electron beam filament specification and development objectives, facilities and fabrication for electron beam filament production, electron beam filament JIG & fixture design and fabrication followed by electron beam filament prototype. Then, the automation and complete inspection equipment of the previously developed electronic beam filament manufacturing facilities was developed and researched to mass-produce them, to analyze and modify prototypes, design and manufacture automation facilities, and finally, to design and manufacture the complete inspection equipment. In this paper, analysis and modification of prototypes of electron beam filaments for mass production were dealted with.

Thin-film shape technology is recognized for its core technology to enhance the technology of LCD, PDP, semiconductor manufacturing processes, hard disks and optical disks, and is widely used to form coated thin films of products. In addition, resistance (electron beam filament) technology for heating is used to manufacture filament for ion implants used in semiconductor manufacturing processes. By establishing an electronic beam filament production system and developing seven specifications of electronic beam filament, it is contributing to improving trade dynamics and increasing exports to Japan through localized media of theoretical imports to domestic companies. In this study, CAE analysis was performed after setting electron beam filament specification and development objectives, facilities and fabrication for electron beam filament production, electron beam filament JIG & fixture design and fabrication followed by electron beam filament prototype. Then, the automation and complete inspection equipment of the previously developed electronic beam filament manufacturing facilities was developed and researched to mass-produce them, to analyze and modify prototypes, design and manufacture automation facilities, and finally, to design and manufacture the complete inspection equipment. In this paper, design and manufacture of electronic beam filament automation facilities for mass production were dealted with.

Thin-film shape technology is recognized for its core technology to enhance the technology of LCD, PDP, semiconductor manufacturing processes, hard disks and optical disks, and is widely used to form coated thin films of products. In addition, resistance (electron beam filament) technology for heating is used to manufacture filament for ion implants used in semiconductor manufacturing processes. By establishing an electronic beam filament production system and developing seven specifications of electronic beam filament, it is contributing to improving trade dynamics and increasing exports to Japan through localized media of theoretical imports to domestic companies. In this study, CAE analysis was performed after setting electron beam filament specification and development objectives, facilities and fabrication for electron beam filament production, electron beam filament JIG & fixture design and fabrication followed by electron beam filament prototype. Then, the automation and complete inspection equipment of the previously developed electronic beam filament manufacturing facilities was developed and researched to mass-produce them, to analyze and modify prototypes, design and manufacture automation facilities, and finally, to design and manufacture the complete inspection equipment. In this paper, mainly design and manufacturing of facilities for making electron beam filament were dealted with.

Thin-film shape technology is recognized for its core technology to enhance the technology of LCD, PDP, semiconductor manufacturing processes, hard disks and optical disks, and is widely used to form coated thin films of products. In addition, resistance (electron beam filament) technology for heating is used to manufacture filament for ion implants used in semiconductor manufacturing processes. By establishing an electronic beam filament production system and developing seven specifications of electronic beam filament, it is contributing to improving trade dynamics and increasing exports to Japan through localized media of theoretical imports to domestic companies. In this study, CAE analysis was performed after setting electron beam filament specification and development objectives, facilities and fabrication for electron beam filament production, electron beam filament JIG & fixture design and fabrication followed by electron beam filament prototype. Then, the automation and complete inspection equipment of the previously developed electronic beam filament manufacturing facilities was developed and researched to mass-produce them, to analyze and modify prototypes, design and manufacture automation facilities, and finally, to design and manufacture the complete inspection equipment. In this paper, mainly jig & fixture design, production and trial production of electron beam filament were dealted with.

Thin-film shape technology is recognized for its core technology to enhance the technology of LCD, PDP, semiconductor manufacturing processes, hard disks and optical disks, and is widely used to form coated thin films of products. In addition, resistance(electron beam filament) technology for heating is used to manufacture filament for ion implants used in semiconductor manufacturing processes. By establishing an electronic beam filament production system and developing seven specifications of electronic beam filament, it is contributing to improving trade dynamics and increasing exports to Japan through localized media of theoretical imports to domestic companies. In this study, CAE analysis was performed after setting electron beam filament specification and development objectives, facilities and fabrication for electron beam filament production, electron beam filament JIG & fixture design and fabrication followed by electron beam filament prototype. Then, the automation and complete inspection equipment of the previously developed electronic beam filament manufacturing facilities was developed and researched to mass-produce them, to analyze and modify prototypes, design and manufacture automation facilities, and finally, to design and manufacture the complete inspection equipment. In this paper, mainly electron beam filament specification analysis and development objectives and CAE analysis were dealted with.

In this study, using deep learning, super-resolution images of transmission electron microscope (TEM) images were generated for nanomaterial analysis. 1169 paired images with 256  256 pixels (high resolution: HR) from TEM measurements and 32  32 pixels (low resolution: LR) produced using the python module openCV were trained with deep learning models. The TEM images were related to DyVO4 nanomaterials synthesized by hydrothermal methods. Mean-absolute-error (MAE), peak-signal-to-noise-ratio (PSNR), and structural similarity (SSIM) were used as metrics to evaluate the performance of the models. First, a super-resolution image (SR) was obtained using the traditional interpolation method used in computer vision. In the SR image at low magnification, the shape of the nanomaterial improved. However, the SR images at medium and high magnification failed to show the characteristics of the lattice of the nanomaterials. Second, to obtain a SR image, the deep learning model includes a residual network which reduces the loss of spatial information in the convolutional process of obtaining a feature map. In the process of optimizing the deep learning model, it was confirmed that the performance of the model improved as the number of data increased. In addition, by optimizing the deep learning model using the loss function, including MAE and SSIM at the same time, improved results of the nanomaterial lattice in SR images were achieved at medium and high magnifications. The final proposed deep learning model used four residual blocks to obtain the characteristic map of the low-resolution image, and the super-resolution image was completed using Upsampling2D and the residual block three times.

This study compares the characteristics of a compact TiO2 (c-TiO2) powdery film, which is used as the electron transport layer (ETL) of perovskite solar cells, based on the manufacturing method. Additionally, its efficiency is measured by applying it to a carbon electrode solar cell. Spin-coating and spray methods are compared, and spraybased c-TiO2 exhibits superior optical properties. Furthermore, surface analysis by scanning electron microscopy (SEM) and atomic force microscopy (AFM) exhibits the excellent surface properties of spray-based TiO2. The photoelectric conversion efficiency (PCE) is 14.31% when applied to planar perovskite solar cells based on metal electrodes. Finally, carbon nanotube (CNT) film electrode-based solar cells exhibits a 76% PCE compared with that of metal electrodebased solar cells, providing the possibility of commercialization.

Individual multi-walled carbon nanotubes (MWCNTs) were exposed to the electron beam of 200 kV energy and high resolution transmission electron micrographs were recorded at several time intervals. Interestingly, the nucleation of diamond nanoparticles with in the highly disordered MWCNT matrix upon electron-irradiation is observed. This happens without any assistance of high pressures and temperatures. High pressure X-ray diffraction experiments were performed on core/shell structures which suggest that even the closed structures of carbon resist any inward pressure, thereby ruling out the possibility of a hypothetical internal pressure under the electron irradiation conditions. Our experiments suggest that the transformation of graphitic carbon into diamond in the size window of a few nanometers is possible due to the stability of the diamond and a selective dissolution effect of 200 kV electrons on graphite. A mechanism for the same is proposed.

Abstract In this study, micro-defects on/in carbon fibers were modified by irradiation with an electron beam, which improved the mechanical strength of single carbon fibers. The electron beam irradiation was 10 kGy (using a 1.5 MeV accelerator in the air). The total doses ranged from 100 to 500 kGy. The tensile strength of the single carbon fiber was measured using a universal testing machine. The micro-defects on the fiber surface were observed with scanning electron microscopy and atomic force microscopy, and those in the fiber were evaluated by Raman spectroscopy. In conclusion, the electron beam treatment produced changes in the micro-defects on/in the carbon fibers, resulting in up to 14% improvement in the tensile strength of single carbon fiber.

Polyacrylonitrile (PAN)-based carbon fibers (CFs) and their composites, CF-reinforced plastics, have garnered significant interest as promising structural materials owing to their excellent properties and lightweight. Therefore, various processing technologies for fabricating these advanced materials using thermal energy have been intensively investigated and developed. In most cases, these thermal energy-based processes (heat treatment) are energy and time consuming due to the inefficient energy transfer from the source to materials. Meanwhile, advanced processing technologies that directly transfer energy to materials, such as radiation processing, have been developed and applied in several industrial sectors since the 1960s. Herein, general aspects of radiation processing and several key parameters for electron-beam (e-beam) processing are introduced, followed by a review of our previous studies pertaining to the preparation of low-cost CFs using specific and textile-grade PAN fibers and improvements in the mechanical and thermal properties of CF-reinforced thermoplastics afforded by e-beam irradiation. Radiation processing using e-beam irradiation is anticipated to be a promising method for fabricating advanced carbon materials and their composites.