Electrical and thermal transport properties of a polycrystalline carrier-doped wide-gap semiconductor LaCu1-δ S0.5Se0.5O (δ = 0.01), in which the CuCh (Ch = S, Se) layer works as conducting layer, were measured at temperatures 473~673 K. The presence of δ = 0.01 copper defects dramatically reduces the electrical resistivity (ρ) to approximately one part per million compared to that of δ = 0 at room temperature. The polycrystalline δ = 0.01 sample exhibited ρ of 1.3 × 10-3 Ωm, thermal conductivity of 6.0 Wm-1 K-1, and Seebeck coefficient (S) of 87 μVK-1 at 673 K. The maximum value of the dimensionless figure of merit (ZT) of the δ = 0.01 sample was calculated to be 6.4 × 10-4 at T = 673 K. The ZT value is far smaller than a ZT ~ 0.01 measured for a nominal LaCuSeO sample. The smaller ZT is mainly due to the small S measured for LaCu1-δS0.5Se0.5O (δ = 0.01). According to the Debye model, above 300 K phonon thermal conductivity in a pure lattice is inversely proportional to T, while thermal conductivity of the δ = 0.01 sample increases with increasing T.

High-quality diamond films have attracted extensive attentions due to their excellent optical and electrical properties. However, several issues, such as random orientation, stress accumulation, and slow growth rate, severely limit its applications. In this paper, high-quality polycrystalline diamond films with highly ordered (100) orientation were prepared by microwave plasma chemical vapor deposition. The effects of growth parameters on the microstructure, quality and residual stress of diamond films were investigated. Experimental results indicate that relatively high temperature at low methane concentration will promote the formation of (100) oriented grains with a low compressive stress. Optimized growth parameters, a methane concentration of 2% along with a pressure of 250 Torr and temperature at 1050 ℃, were used to acquire high growth rate of 7.9 μm/h and narrow full width at half maximum of Raman peak of 5.5 cm− 1 revealing a high crystal quality. It demonstrates a promising method for rapid growth of high-quality polycrystalline diamond films with (100) orientation, which is vital for improving the diamond related applications at low cost.

A 1.8 μm thick polycrystalline diamond (PCD) thin film layer is prepared on a Si(100) substrate using hot-filament chemical vapor deposition. Thereafter, its thermal conductivity is measured using the conventional laser flash analysis (LFA) method, a LaserPIT-M2 instrument, and the newly proposed light source thermal analysis (LSTA) method. The LSTA method measures the thermal conductivity of the prepared PCD thin film layer using an ultraviolet (UV) lamp with a wavelength of 395 nm as the heat source and a thermocouple installed at a specific distance. In addition, the microstructure and quality of the prepared PCD thin films are evaluated using an optical microscope, a field emission scanning electron microscope, and a micro-Raman spectroscope. The LFA, LaserPIT-M2, and LSTA determine the thermal conductivities of the PCD thin films, which are 1.7, 1430, and 213.43 W/(m·K), respectively, indicating that the LFA method and LaserPIT-M2 are prone to errors. Considering the grain size of PCD, we conclude that the LSTA method is the most reliable one for determining the thermal conductivity of the fabricated PCD thin film layers. Therefore, the proposed LSTA method presents significant potential for the accurate and reliable measurement of the thermal conductivity of PCD thin films.

The results of gas chromatography–mass spectrometry (GC–MS) demonstrate that the volatiles captured by diamond grown by chemical vapour deposition (CVD) technology contain hydrocarbons and their derivatives (72.2 rel. %). We have identified aliphatic (paraffins and olefins), cyclic (naphthenes and arenes) and oxygenated (alcohols, aldehydes, ketones and carboxylic acids) hydrocarbons, as well as nitrogenated and sulfonated compounds. Water, negligible amounts of CO2 and Ar were also detected among the volatile components.

Polycrystalline diamond (PCD) tools possessing high hardness and abrasive wear resistance are particularly suited for drilling of carbon fiber reinforced plastic (CFRP) composites, where tool life and consistent hole quality are important. While PCD presents superior performance when drilling CFRP, it is unclear how it performs when drilling multi-stack materials such as CFRP-titanium (Ti) stacks. This comparative study aims to investigate drilling of a Ti plate stacked on a CFRP panel when using PCD tools. The first sequence of the drilling experiments was to drill 20 holes in CFRP only. CFRP-Ti stacks were then drilled for the next 20 holes with the same drill bit. CFRP holes and CFRP-Ti stack holes were evaluated in terms of machined hole quality. The main tool wear mechanism of PCD drills is micro-fractures that occur when machining the Ti plate of the stack. Tool wear increases the instability and the operation temperature when machining the Ti plate. This results in high drilling forces, large hole diameter errors, high surface roughness, wider CFRP exit thermal damage, and taller exit Ti burrs.

This study investigates the thermal shock property of a polycrystalline diamond compact (PDC) produced by a high-pressure, high-temperature (HPHT) sintering process. Three kinds of PDCs are manufactured by the HPHT sintering process using different particle sizes of the initial diamond powders: 8-16 μm (D50 = 4.3 μm), 10-20 μm (D50 = 6.92 μm), and 12-22 μm (D50 = 8.94 μm). The microstructure observation results for the manufactured PDCs reveal that elemental Co and W are present along the interface of the diamond particles. The fractions of Co and WC in the PDC increase as the initial particle size decreases. The manufactured PDCs are subjected to thermal shock tests at two temperatures of 780oC and 830oC. The results reveal that the PDC with a smaller particle size of diamond easily produces microscale thermal cracks. This is mainly because of the abundant presence of Co and WC phases along the diamond interface and the easy formation of Co-based (CoO, Co3O4) and W-based (WO2) oxides in the PDC using smaller diamond particles. The microstructural factors for controlling the thermal shock property of PDC material are also discussed.

This study investigated the microstructure and wear resistance property of HPHT (high pressure high temperature) sintered PDC (polycrystalline diamond compact) in accordance with initial molding pressure. After quantifying an identical amount of diamond powder, the powder was inserted in top of WC-Co sintered material, and molded under four different pressure conditions (50, 100, 150, 200 kgf/cm2). The obtained diamond compact underwent sintering in high pressure, high temperature conditions. In the case of the 50 kgf/cm2 initial molding pressure condition, cracks were formed on the surface of PDC. On the other hand, PDCs obtained from 100~200 kgf/cm2 initial molding pressure conditions showed a meticulous structure. As molding pressure increased, low Co composition within PDC was detected. A wear resistance test was performed on the PDC, and the 200 kgf/cm2 condition PDC showed the highest wear resistance property.

This study investigates the microstructure and thermal shock properties of polycrystalline diamond compact (PDC) produced by the high-temperature, high-pressure (HPHT) process. The diamond used for the investigation features a 12~22 μm- and 8~16 μm-sized main particles, and 1~2 μm-sized filler particles. The filler particle ratio is adjusted up to 5~31% to produce a mixed particle, and then the tap density is measured. The measurement finds that as the filler particle ratio increases, the tap density value continuously increases, but at 23% or greater, it reduces by a small margin. The mixed particle described above undergoes an HPHT sintering process. Observation of PDC microstructures reveals that the filler particle ratio with high tap density value increases direct bonding among diamond particles, Co distribution becomes even, and the Co and W fraction also decreases. The produced PDC undergoes thermal shock tests with two temperature conditions of 820 and 830, and the results reveals that PDC with smaller filler particle ratio and low tap density value easily produces cracks, while PDC with high tap density value that contributes in increased direct bonding along with the higher diamond content results in improved thermal shock properties.

A strain-gradient crystal plasticity constitutive model was developed in order to predict the Hall Petch behavior of a Ni-base polycrystalline superalloy. The constitutive model involves statistically stored dislocation and geometrically necessary dislocation densities, which were incorporated into the Bailey-Hirsch type flow stress equation with six strength interaction coefficients. A strain-gradient term (called slip-system lattice incompatibility) developed by Acharya was used to calculate the geometrically necessary dislocation density. The description of Kocks-Argon-Ashby type thermally activated strain rate was also used to represent the shear rate of an individual slip system. The constitutive model was implemented in a user material subroutine for crystal plasticity finite element method simulations. The grain size dependence of the flow stress (viz., the Hall- Petch behavior) was predicted for a Ni-base polycrystalline superalloy NIMONIC PE16. Simulation results showed that the present constitutive model fairly reasonably predicts 0.2%-offset yield stresses in a limited range of the grain size.

Amorphous (a-Si) films were epitaxially crystallized on a very thin large-grained poly-Si seed layer by a silicide-enhanced rapid thermal annealing (SERTA) process. The poly-Si seed layer contained a small amount of nickel silicide whichcan enhance crystallization of the upper layer of the a-Si film at lower temperature. A 5-nm thick poly-Si seed layer was thenprepared by the crystallization of an a-Si film using the vapor-induced crystallization process in a NiCl2 environment. Afterremoving surface oxide on the seed layer, a 45-nm thick a-Si film was deposited on the poly-Si seed layer by hot-wire chemicalvapor deposition at 200oC. The epitaxial crystallization of the top a-Si layer was performed by the rapid thermal annealing(RTA) process at 730oC for 5 min in Ar as an ambient atmosphere. Considering the needle-like grains as well as thecrystallization temperature of the top layer as produced by the SERTA process, it was thought that the top a-Si layer wasepitaxially crystallized with the help of NiSi2 precipitates that originated from the poly-Si seed layer. The crystallinity of theSERTA processed poly-Si thin films was better than the other crystallization process, due to the high-temperature RTA process.The Ni concentration in the poly-Si film fabricated by the SERTA process was reduced to 1×1018cm−3. The maximum field-effect mobility and substrate swing of the p-channel poly-Si thin-film transistors (TFTs) using the poly-Si film prepared by theSERTA process were 85cm2/V·s and 1.23V/decade at Vds=−3V, respectively. The off current was little increased underreverse bias from 1.0×10−11 A. Our results showed that the SERTA process is a promising technology for high quality poly-Si film, which enables the fabrication of high mobility TFTs. In addition, it is expected that poly-Si TFTs with low leakagecurrent can be fabricated with more precise experiments.

Modified thermal annealing was applied to the activation of the polycrystalline silicon films doped as p-type through implantation of B2H6. The statistical design of experiments was successfully employed to investigate the effect of rapid thermal annealing on activation of polycrystalline Si doped as p-type. In this design, the input variables are furnace temperature, power of halogen lamps, and alternating magnetic field. The degree of ion activation was evaluated as a function of processing variables, using Hall effect measurements and Raman spectroscopy. The main effects were estimated to be furnace temperature and RTA power in increasing conductivity, explained by recrystallization of doped ions and change of an amorphous Si into a crystalline Si lattice. The ion activation using rapid thermal annealing is proven to be a highly efficient process in low temperature polycrystalline Si technology.

Electrical properties of multi-channel metal-induced unilaterally precrystallized polycrystalline silicon thin-film transistor (MIUP poly-Si TFT) devices and circuits were investigated. Although their structure was integrated into small area, reducing annealing process time for fuller crystallization than that of conventional crystal filtered MIUP poly-Si TFTs, the multi-channel MIUP poly-Si TFTs showed the effect of crystal filtering. The multi-channel MIUP poly-Si TFTs showed a higher carrier mobility of more than 1.5 times that of the conventional MIUP poly-Si TFTs. Moreover, PMOS inverters consisting of the multi-channel MIUP poly-Si TFTs showed high dynamic performance compared with inverters consisting of the conventional MIUP poly-Si TFTs.

High-purity and super-hard nano-polycrystalline diamond has been successfully synthesized by direct conversion from high-purity graphite under static pressures above 15 GPa and temperatures above . This paper describes research findings on the formation mechanism of nano-structure and on the contributing factor leading to high hardness.

본 연구에서는 도핑하지 않은 다이아몬드 박막에서의 전류전도 경로를 체계적으로 규명하고 다이아몬드 박막의 전도기구에 대해 조사하였다. 도핑되지 않은 다결정 다이아몬드 박막에서 두께와 측정방향에 따른 교류 임피던스법에 의해 측정된 저향값이 기존의 표면전도 모델과는 일치하지 안니하였다. 다이아몬드 박막에 구리를 전기도금한 결과 구리는 결정립계에만 불연속적으로 도금되었고 다이아몬드 박막 위에 은을 증착한 후 전지에칭을 한 결과 결정립계가 우선 에칭이 되어 전류가 결정립계를 통하여 흐름을 확인하였다. 또, 리본형 다이아몬드 박막의 표면을 절연층으로 형성시킨 후 박막 내부의 결정립계를 통하여 전류가 흘러 전기도금이 되는 것으로부터 다결정 다이아몬드 박막의 주요 전기전도 경로는 결정립계임을 확인하였다. 높은 전기전도도를 보여주는 다이아몬드 박막은 전도 활성화 에너지가 45meV 정도이었고 dangling bond 밀도는 낮았다. 그러나 산소 열처리나 수소플라즈마처리가 Si passivation 이론과는 반대로 dangling bond 밀도를 증가시키면서 전기전도성을 떨어뜨렸다. 이 결과들과 표면의 탄소화학결합을 연결시켜 높은 전도성을 야기시키는 결합은 H-C-C-H 결합임을 추론하였다.