Colloidal quantum dot (QDs) have emerged as a crucial building block for LEDs due to their size-tunable emission wavelength, narrow spectral line width, and high quantum efficiency. Tremendous efforts have been dedicated to improving the performance of quantum dot light-emitting diodes (QLEDs) in the past decade, primarily focusing on optimization of device architectures and synthetic procedures for high quality QDs. However, despite these efforts, the commercialization of QLEDs has yet to be realized due to the absence of suitable large-scale patterning technologies for high-resolution devices., This review will focus on the development trends associated with transfer printing, photolithography, and inkjet printing, and aims to provide a brief overview of the fabricated QLED devices. The advancement of various quantum dot patterning methods will lead to the development of not only QLED devices but also solar cells, quantum communication, and quantum computers.

This study aimed to a sign device using quantum dot film. We synthesized quantum dots with an absolute quantum yield of more than 95% using the solution process method, coated the quantum dot film by mixing it with acrylate resin, made a sign device, and studied the improvement of visibility, and obtained the following conclusions. Quantum dots with absolute quantum yield of 97.63% at 535 nm and 97.85% at 615 nm were synthesized by doping InP with GaP and stacking ZnSe and ZnS composite shells. The synthesized quantum dots were mixed with acrylate syrup at a weight ratio of 10% to coat a film with a luminance uniformity of more than 95%, and the quantum dot film was attached to a luminous display with an insulation capacity of 500 V, an insulation resistance of 99.9 GΩ, and a luminance of 688.5 ㏅/㎠ at white region and 122.3 ㏅/㎠ at red region.

본 논문에서는 반도체 특성의 단일벽 탄소나노튜브(semi-SWNTs)와 페로브스카이트(perovskite) 양자 점을 혼합하여 SWNT의 높은 전하 이동 특성과 양자점의 고효율 광전 특성을 동시에 가지는 용액공정 가 능한 기반 고성능 광센서를 개발하기 위한 연구를 수행하였다. 직경이 작은 SWNT를 공액 구조 고분자 반도체를 이용해 선택적으로 분리/분산하는 방법으로 제조하여 포토트랜지스터의 반도체 채널 층으로 활 용하고, 가시광 빛에 높은 흡광도를 가지는 양자점을 다양한 조성과 구조를 가지는 광활성층으로 제조하 여 그 특성을 비교 분석하였다. 이 결과 semi-SWNTs와 페로브스카이트 양자점 모두 단독으로 TFT에 사 용하였을 경우 우수한 트랜지스터 특성과는 별개로 광전효과가 크게 나타나지 않았으며, 두 종류 이상의 반도체 소재를 융합하여 사용할 경우 양자점에 흡수된 빛에 의해 엑시톤이 형성되고 이종 접합 계면에서 전자와 정공의 분리가 쉽게 이루어지도록 유도함으로써 낮은 광량에서도 높은 효율을 가지는 포토트랜지 스터를 개발할 수 있었다. 향후 지속적인 연구개발을 통해 고유연/저가 광 센서 제품 개발과 레이더, 이미 지 센서, 웨어러블 헬스케어 등의 다양한 분야에 하이브리드 반도체 포토트랜지스터가 응용될 수 있을 것 으로 기대한다.

In this study, quantum dot-sensitized solar cells (QDSSC) using CdSe/ZnS quantum dots (QD) of various sizes with green, yellow, and red colors are developed. Quantum dots, depending their different sizes, have advantages of absorbing light of various wavelengths. This absorption of light of various wavelengths increases the photocurrent production of solar cells. The absorption and emission peaks and excellent photochemical properties of the synthesized quantum dots are confirmed through UV-visible and photoluminescence (PL) analysis. In TEM analysis, the average sizes of individual green, yellow, and red quantum dots are shown to be 5 nm, 6 nm, and 8 nm. The J-V curves of QDSSC for one type of QD show a current density of 1.7 mA/cm2 and an open-circuit voltage of 0.49 V, while QDSSC using three type of QDs shows improved electrical characteristics of 5.52 mA/cm2 and 0.52 V. As a result, the photoelectric conversion efficiency of QDSSC using one type of QD is as low as 0.53 %, but QDSSC using three type of QDs has a measured efficiency of 1.4 %.

물 부족을 포함한 기후 변화의 해로운 결과는 효과적인 정수에 대한 관심을 가져왔다. 또한, 수질 오염 수준이 높 아지고 환경 파괴 수준이 심해지면서 오염 물질을 제거하려는 방안들이 요구되고 있다. 물을 정화하기 위해 반투막을 통한 삼투압 절차들을 사용할 수 있으며, 최근 연구에 따르면 탄소 양자점(CQD), 그래핀 양자점(GQD) 및 산화 그래핀 양자점 (GOQD)을 포함한 나노입자를 복합 박막(TFC)에 합체하면 유사한 수준의 염 거부율을 유지하면서 물흐름을 증가시킬 수 있 다. 이러한 효과 외의 여러 가지 효과가 있지만 그 중에서도 친수성을 높이고, 살균 성질을 보이고, 방오 특성으로 인해 박테 리아 및 기타 미생물의 축적을 방지하면서 막의 효과가 감소하는 것을 막는 것을 보여준다. 이 보고서는 양자점이 합체된 정 수용 복합 막에서 양자점의 제조 과정, 응용, 기능성, 성질 및 역할을 논의한다.

A transparent quantum dot (QD)-based light-emitting diode (LED) with silver nanowire (Ag NW) and indium-tin oxide (ITO) hybrid electrode is demonstrated. The device consists of an Ag NW-ITO hybrid cathode (-), zinc oxide, poly (9- vinylcarbazole) (PVK), CdSe/CdZnS QD, tungsten trioxide, and ITO anode (+). The device shows pure green-color emission peaking at 548 nm, with a narrow spectral half width of 43 nm. Devices with hybrid cathodes show better performances, including higher luminance with higher current density, and lower threshold voltage of 5 V, compared with the reference device with a pure Ag NW cathode. It is worth noting that our transparent device with hybrid cathode exhibits a lifetime 9,300 seconds longer than that of a device with Ag NW cathode. This is the reason that the ITO overlayer can protect against oxidization of Ag NW, and the Ag NW underlayer can reduce the junction resistance and spread the current efficiently. The hybrid cathode for our transparent QD LED can applicable to other quantum structure-based optical devices.

The purpose of this study was to investigate the effects of LED and QD-LED (Quantum Dot) irradiation on seed germination, antioxidant ability, and microbial growth, during red radish (Raphanus sativus L.) sprouts cultivation. Irradiated light was blue, red, blue + red and blue + red + far red (QD-LED) lights, and the controls were a fluorescent lamp (FL), and dark condition. Germination rate of red radish was highest in the dark condition. The plant height and fresh weight of red radish sprouts that irradiated each light for 24 hrs after 7 days growing in dark condition, did not shown significantly difference among treatments. After 24 hrs of light irradiation, cotyledon green was best in blue + red light, and the red hypocotyl was excellent in blue light and QD-LED light. DPPH and phenol contents were high in dark and blue + red light treatment, and anthocyanin content was high in blue light and QDLED light. Total aerobic counts were similar in all treatments and did not show bactericidal effect, whereas E. coli count was lowest in QD-LED light treatment, and yeast and mold counts were lowest in FL only treatment. Results suggest that when red radish seeds were germinated in dark condition and cultivated for 7 days as sprouts, and then treated with blue light or QD-LED light for 24 hrs, the seeds produced good quality red radish sprouts with greenish cotyledon, reddish hypocotyl, high anthocyanin content, and lower level of E coli contamination.

Quantum dots (QDs) are an attractive material for application in solar energy conversion devices because of their unique properties including facile band-gap tuning, a high-absorption coefficient, low-cost processing, and the potential multiple exciton generation effect. Recently, highly efficient quantum dot-sensitized solar cells (QDSCs) have been developed based on CdSe, PbS, CdS, and Cu-In-Se QDs. However, for the commercialization and wide application of these QDSCs, replacing the conventional rigid glass substrates with flexible substrates is required. Here, we demonstrate flexible CISe QDSCs based on vertically aligned TiO2 nanotube (NT) electrodes. The highly uniform TiO2 NT electrodes are prepared by two-step anodic oxidation. Using these flexible photoanodes and semi-transparent Pt counter electrodes, we fabricate the QDSCs and examine their photovoltaic properties. In particular, photovoltaic performances are optimized by controlling the nanostructure of TiO2 NT electrodes

Core/shell CdSe/ZnS quantum dots (QDs) are synthesized by a microfluidic reactor-assisted continuous reactor system. Photoluminescence and absorbance of synthesized CdSe/ZnS core/shell QDs are investigated by fluorescence spectrophotometry and online UV-Vis spectrometry. Three reaction conditions, namely; the shell coating reaction temperature, the shell coating reaction time, and the ZnS/CdSe precursor volume ratio, are combined in the synthesis process. The quantum yield of the synthesized CdSe QDs is determined for each condition. CdSe/ZnS QDs with a higher quantum yield are obtained compared to the discontinuous microfluidic reactor synthesis system. The maximum quantum efficiency is 98.3% when the reaction temperature, reaction time, and ZnS/CdSe ratio are 270℃, 10 s, and 0.05, respectively. Obtained results indicate that a continuous synthesis of the Core/shell CdSe/ZnS QDs with a high quantum efficiency could be achieved by isolating the reaction from the external environment.

The thermoelectric Seebeck and Peltier effects of a single walled carbon nanotube (SWCNT) quantum dot nanodevice are investigated, taking into consideration a certain value of applied tensile strain and induced ac-field with frequency in the terahertz (THz) range. This device is modeled as a SWCNT quantum dot connected to metallic leads. These two metallic leads operate as a source and a drain. In this three-terminal device, the conducting substance is the gate electrode. Another metallic gate is used to govern the electrostatics and the switching of the carbon nanotube channel. The substances at the carbon nanotube quantum dot/ metal contact are controlled by the back gate. Results show that both the Seebeck and Peltier coefficients have random oscillation as a function of gate voltage in the Coulomb blockade regime for all types of SWCNT quantum dots. Also, the values of both the Seebeck and Peltier coefficients are enhanced, mainly due to the induced tensile strain. Results show that the three types of SWCNT quantum dot are good thermoelectric nanodevices for energy harvesting (Seebeck effect) and good coolers for nanoelectronic devices (Peltier effect).

CdSe/CdZnS core/shell/lignad 구조를 가지는 red quantum dot을 발광층으로 사용하여 indium tin oxide(양전 극) glass위에 molybdeum oxide (MoO3), Poly(9-vinylcarbazole)(PVK), CdSe/CdZnS quantum dot, Zinc Oxide (ZnO)을 순차적으로 스핀코팅을 하고, aluminium(Al)(음전극)을 진공 열증착을 통해 다층구조를 제작하여 연구를 진 행하였다. 본 연구에 사용된 quantum dot의 PL peak는 625 nm으로 관찰되었다. 제작된 소자는 약 7 V에서 발광하 기 시작하였으며, 이를 소자의 turn-on voltage로 판단하였다. 인가전압이 증가할수록 소자의 전류밀도와 휘도의 지수 함수적 증가를 관찰할 수 있었다. EL 스펙트럼의 peak는 11 V에서 627 nm이다가, 최대 동작전압인 19 V에서는 630 nm로 red shift 하였다. 소자의 최대 밝기는 210 cd/m2, 최대 전류밀도는 33 mA/cm2, 최대 전류효율은 0.5 cd/A로 측 정되었다.

High-quality colloidal CdSe/ZnS (core/shell) is synthesized using a continuous microreactor. The particle size of the synthesized quantum dots (QDs) is a function of the precursor flow rate; as the precursor flow rate increases, the size of the QDs decreases and the band gap energy increases. The photoluminescence properties are found to depend strongly on the flow rate of the CdSe precursor owing to the change in the core size. In addition, a gradual shift in the maximum luminescent wave (λmax) to shorter wavelengths (blue shift) is found owing to the decrease in the QD size in accordance with the quantum confinement effect. The ZnS shell decreases the surface defect concentration of CdSe. It also lowers the thermal energy dissipation by increasing the concentration of recombination. Thus, a relatively high emission and quantum yield occur because of an increase in the optical energy emitted at equal concentration. In addition, the maximum quantum yield is derived for process conditions of 0.35 ml/min and is related to the optimum thickness of the shell material.

CdSe/CdZnS core/shell/lignad 구조를 가지는 red quantum dot을 이용하여 indium tin oxide(양전극) glass 위에 poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)(PEDOT:PSS), CdSe/CdZnS quantum dot, 2,2,2"-(1,3,5-Benzinetriyl)-tris (1-phenyl-1-H-benzimidazole) (TPBi)을 순차적으로 스핀코팅을 하고, aluminium(Al) (음전극)을 진공 열증착 통해 다층구조를 제작하여 연구를 진행하였다. 본 연구에 사용된 quantum dot의 PL 측정과 흡수스펙트럼 측정을 통해 644 nm에서 PL peak가 나타나고, 602 nm에서 흡수 peak를 관찰할 수 있었다. 제작된 소 자는 8 V에서 발광하기 시작하여, 이는 turn-on voltage로 판단하였다. 전압이 증가함에 따라 전류밀도와 휘도가 지 수함수적인 증가를 보였다. 스펙트럼의 peak는 11 V에서 629 nm이다가, 최대 동작전압인 17 V에서는 645 nm로 red shift하였고, 반치폭 또한 11 V에서 44.6 nm이다가 17 V에서는 52.3 nm로 넓어지는 것을 관찰할 수 있었다. 스펙트 럼의 변화에 따라 색좌표도 변화하는 것을 관찰할 수 있었다.

We report a synthesis of non-toxic InP nanocrystals using non-pyrolytic precursors instead of pyrolytic and unstable tris(trimethylsilyl)phosphine, a popular precursor for synthesis of InP nanocrystals. In this study, InP nanocrystals are successfully synthesized using hexaethyl phosphorous triamide (HPT) and the synthesized InP nanocrystals showed a broad and weak photoluminescence (PL) spectrum. As synthesized InP nanocrystals are subjected to further surface modification process to enhance their stability and photoluminescence. Surface modification of InP nanocrystals is done at 230°C using 1-dodecanethiol, zinc acetate and fatty acid as sources of ZnS shell. After surface modification, the synthesized InP/ZnS nanocrystals show intense PL spectra centered at the emission wavelength 612 nm through 633 nm. The synthesized InP/ZnS core/shell structure is confirmed with X-ray diffraction (XRD) and Inductively Coupled Plasma - Atomic Emission Spectrometer (ICP-AES). After surface modification, InP/ZnS nanocrystals having narrow particle size distribution are observed by Field Emission Transmission Electron Microscope (FE-TEM). In contrast to uncapped InP nanocrystals, InP/ZnS nanocrystals treated with a newly developed surface modified procedure show highly enhanced PL spectra with quantum yield of 47%.

연구에서는 연색 지수가 90이상의 초고연색성 백색 발광다이오드를 구현하기 위해서, 황색형광체로서 Y3Al5O12:Ce3+, 녹색형광체로서 Lu3Al5O12:Ce3+ 그리고 적색형광체로서 InP/ZnS 양자점을 적용한 형광체 변환방식의 백색 발광다이오드의 새로운 조합을 제안하였다. 또한 발광효율을 향상하기 위해서 청색 칩 위에 이증 구조의 형광 체 도포방식을 적용하였다. 적색 InP/ZnS 양자점을 적용하여 만들어진 백색 발광다이오드는 동작전류 60mA, 상관 색온도 5200K 조건하에서 발광효율이 123 lm/W 이상이며, 90 이상의 초고연색성을 나타내었다. 상업적으로 적용된 초고연색성 백색 발광다이오드 제품과 비교해 보면, 적색 InP/ZnS 양자점을 적용한 형광체 변환 방식에 의한 백색 발광다이오드 연구 결과는 고체조명 응용에 적용될 수 있을 것으로 예상된다.

Quantum dots(QDs) with their tunable luminescence properties are uniquely suited for use as lumophores in light emitting device. We investigate the microstructural effect on the electroluminescence(EL). Here we report the use of inorganic semiconductors as robust charge transport layers, and demonstrate devices with light emission. We chose mechanically smooth and compositionally amorphous films to prevent electrical shorts. We grew semiconducting oxide films with low free-carrier concentrations to minimize quenching of the QD EL. The hole transport layer(HTL) and electron transport layer(ETL) were chosen to have carrier concentrations and energy-band offsets similar to the QDs so that electron and hole injection into the QD layer was balanced. For the ETL and the HTL, we selected a 40-nm-thick ZnSnOx with a resistivity of 10Ω·cm, which show bright and uniform emission at a 10 V applied bias. Light emitting uniformity was improved by reducing the rpm of QD spin coating.At a QD concentration of 15.0 mg/mL, we observed bright and uniform electroluminescence at a 12 V applied bias. The significant decrease in QD luminescence can be attributed to the non-uniform QD layers. This suggests that we should control the interface between QD layers and charge transport layers to improve the electroluminescence.