Mono- and few-layer graphenes were grown on Ni thin films by rapid-thermal pulse chemical vapor deposition technique. In the growth steps, the exposure step for 60 s in H2 (a flow rate of 10 sccm (standard cubic centimeters per minute)) atmosphere after graphene growth was specially established to improve the quality of the graphenes. The graphene films grown by exposure alone without H2 showed an intensity ratio of IG/I2D = 0.47, compared with a value of 0.38 in the films grown by exposure in H2 ambient. The quality of the graphenes can be improved by exposure for 60 s in H2 ambient after the growth of the graphene films. The physical properties of the graphene films were investigated for the graphene films grown on various Ni film thicknesses and on 260-nm thick Ni films annealed at 500 and 700˚C. The graphene films grown on 260-nm thick Ni films at 900˚C showed the lowest IG/I2D ratio, resulting in the fewest layers. The graphene films grown on Ni films annealed at 700˚C for 2 h showed a decrease of the number of layers. The graphene films were dependent on the thickness and the grain size of the Ni films.

전분필름의 물성에 미치는 고압균질 처리의 영향을 검토한 결과, 고압균질처리 옥수수전분필름은 산화전분필름과 유사한 투명도를 가지며, 용해도와 산소투과억제력의 증가와 함께 인장강도가 다소 높아지는 것을 확인하였다. 이러한 고압균질처리 옥수수전분필름의 물성변화는 고압균질기의 고압과 전단력에 의해 호화전분입자가 완전히 소실되고 전분의 용해도 증가와 보다 균일한 분산상이 형성되기 때문으로 판단되었다. 일반적인 호화과정을 통해 형성되는 전분필름의 구조는 연속상의 아밀로오스에 팽윤된 접분입자가 분산되어 있는 network 형태에서 형성된다. 반면 고압균질처리의 경우, 호화전분입자의 붕괴로 아밀로펙틴이 연속상을 이루고 여기에 아밀로오스가 분산상으로 존재하는 새로운 분산계(dispersed system)가 형성되어, 기존 호화 방법으로 제조한 필름과 다른 물성을 나타내는 것으로 판단되었다.

This paper describes the fabrication of AlN thin films containing iron and iron nitride particles, and the magnetic and electrical properties of such films. Fe-N-Al alloy films were deposited in Ar and N2 mixtures at ambient temperature using Fe/Al composite targets in a two-facing-target DC sputtering system. X-ray diffraction results showed that the Fe-N-Al films were amorphous, and after annealing for 5 h both AlN and bcc-Fe/bct-FeNx phases appeared. Structure changes in the FeNx phases were explained in terms of occupied nitrogen atoms. Electron diffraction and transmission electron microscopy observations revealed that iron and iron nitride particles were randomly dispersed in annealed AlN films. The grain size of magnetic particles ranged from 5 to 20 nm in diameter depending on annealing conditions. The saturation magnetization as a function of the annealing time for the Fe55N20Al25 films when annealed at 573, 773 and 873 K. At these temperatures, the amount of iron/iron nitride particles increased with increasing annealing time. An increase in the saturation magnetization is explained qualitatively in terms of the amount of such magnetic particles in the film. The resistivity increased monotonously with decreasing Fe content, being consistent with randomly dispersed iron/iron nitride particles in the AlN film. The coercive force was evaluated to be larger than 6.4×103Am-1 (80 Oe). This large value is ascribed to a residual stress restrained in the ferromagnetic particles, which is considered to be related to the present preparation process.

Most TCOs such as ITO, AZO(Al-doped ZnO), FTO(F-doped SnO2) etc., which have been widely used in LCD,touch panel, solar cell, and organic LEDs etc. as transparent electrode material reveal n-type conductivity. But in order to realizetransparent circuit, transparent p-n junction, and introduction of transparent p-type materials are prerequisite. Additionalprerequisite condition is optical transparency in visible spectral region. Oxide based materials usually have a wide optical band-gap more than ~3.0eV. In this study, single-phase transparent semiconductor of SrCu2O2, which shows p-type conductivity, havebeen synthesized by 2-step solid state reaction at 950oC under N2 atmosphere, and single-phase SrCu2O2 thin films of p-typeTCOs have been deposited by RF magnetron sputtering on alkali-free glass substrate from single-phase target at 500oC, 1%H2/(Ar+H2) atmosphere. 3% H2/(Ar+H2) resulted in formation of second phases. Hall measurements confirmed the p-typenature of the fabricated SrCu2O2 thin films. The electrical conductivity, mobility of carrier and carrier density 5.27×10−2S/cm,2.2cm2/Vs, 1.53×1017/cm3 a room temperature, respectively. Transmittance and optical band-gap of the SrCu2O2 thin filmsrevealed 62% at 550nm and 3.28eV. The electrical and optical properties of the obtained SrCu2O2 thin films deposited by RFmagnetron sputtering were compared with those deposited by PLD and e-beam.

Cu(In,Ga)Se2(CIGS) photovoltaic thin films were electrodeposited on Mo/glass substrates with an aqueous solution containing 2 mM CuCl2, 8 mM InCl3, 20 mM GaCl3 and 8mM H2SeO3 at the electrodeposition potential of -0.6 to -1.0 V(SCE) and pH of 1.8. The best chemical composition of Cu1.05In0.8Ga0.13Se2 was found to be achieved at -0.7 V(SCE). The precursor Cu-In-Ga-Se films were annealed for crystallization to chalcopyrite structure at temperatures of 100-500˚C under Ar gas atmosphere. The chemical compositions, microstructures, surface morphologies, and crystallographic structures of the annealed films were analyzed by EPMA, FE-SEM, AFM, and XRD, respectively. The precursor Cu-In-Ga-Se grains were grown sparsely on the Mo-back contact and also had very rough surfaces. However, after annealing treatment beginning at 200˚C, the empty spaces between grains were removed and the grains showed well developed columnar shapes with smooth surfaces. The precursor Cu-In-Ga-Se films were also annealed at the temperature of 500˚C for 60 min under Se gas atmosphere to suppress the Se volatilization. The Se amount on the CIGS film after selenization annealing increased above the Se amount of the electrodeposited state and the MoSe2 phase occurred, resulting from the diffusion of Se through the CIGS film and interaction with Mo back electrode. However, the selenization-annealed films showed higher crystallinity values than did the films annealed under Ar atmosphere with a chemical composition closer to that of the electrodeposited state.

ZnO thin films were prepared on a glass substrate by radio frequency (RF) magnetron sputtering without intentional substrate heating and then surfaces of the ZnO films were irradiated with intense electrons in vacuum condition to investigate the effect of electron bombardment on crystallization, surface roughness, morphology and hydrogen gas sensitivity. In XRD pattern, as deposited ZnO films show a higher ZnO (002) peak intensity. However, the peak intensity for ZnO (002) is decreased with increase of electron bombarding energy. Atomic force microscope images show that surface morphology is also dependent on electron bombarding energy. The surface roughness increases due to intense electron bombardment as high as 2.7 nm. The observed optical transmittance means that the films irradiated with intense electron beams at 900 eV show lower transmittance than the others due to their rough surfaces. In addition, ZnO films irradiated by the electron beam at 900 eV show higher hydrogen gas sensitivity than the films that were electron beam irradiated at 450 eV. From XRD pattern and atomic force microscope observations, it is supposed that intense electron bombardment promotes a rough surface due to the intense bombardments and increased gas sensitivity of ZnO films for hydrogen gas. These results suggest that ZnO films irradiated with intense electron beams are promising for practical high performance hydrogen gas sensors.

플라스틱하우스 피복재의 광 이용효율을 높이기 위해 제조과정에 적색, 청색, 적색+청색 수지를 추가로 첨가하여 제조한 필름을 피복한 시설 내에서 토마토와 고추를 재배하였으며 시설 내 광 환경 변화와 작물의 생육, 수량 등을 조사하였다. 대체로 일반필름에 비하여 적색 및 청색 수지를 첨가한 필름에서 광합성유효복사의 투과량이 5~6% 많았고, 300~1,100nm의 광투과율은 0.5~1.0% 높게 나타났다. 피복재 중에는 적색+청색 혼합수지 첨가필름에서 토마토와 고추의 건물중이 높게 나타났고 일반필름에 비해 과실수량이 15~20% 많았으며 과실 당도도 약 0.5˚Bx. 높았다.

This paper describes the results of the application of Cr-Diamond-like carbon (DLC) films for efficiency improvement through surface modification of spur gear parts in the hydraulic gear pump. Cr-DLC films were successfully deposited on SCM 415 substrates by a hybrid coating process using linear ion source (LIS) and magnetron sputtering method. The characteristics of the films were systematically investigated using FE-SEM, nano-indentation, sliding tester and AFM instrument. The microstructure of Cr-DLC films turned into the dense and fine grains with relatively preferred orientation. The thickness formed in our Cr buffer layer and DLC coating layer were obtained the 487 nm and . The average friction coefficient of Cr-DLC films considerably decreased to 0.15 for 0.50 of uncoated SCM415 material. The hardness and surface roughness of Cr-DLC films were measured 20 GPa and 10.76 nm, respectively. And then, efficiency tests were performed on the hydraulic gear pump to investigate the efficiency performance of the Cr-DLC coated spur gear. The experimental results show that the volumetric and mechanical efficiency of hydraulic gear pump using the Cr-DLC spur gear were improved up to 2~5% and better efficiency improvement could be attributed to its excellent microstructure, higher hardness, and lower friction coefficient. This conclusion proves the feasibility in the efficiency improvement of hydraulic gear pump for industrial applications.

There have been many efforts to modify and improve the properties of functional thin films by hybridization with nano-sized materials. For the fabrication of electronic circuits, micro-patterning is a commonly used process. For photochemical metal-organic deposition, photoresist and dry etching are not necessary for microscale patterning. We obtained direct-patternable SnO2 thin films using a photosensitive solution containing Ag nanoparticles and/or multi-wall carbon nanotubes (MWNTs). The optical transmittance of direct-patternable SnO2 thin films decreased with introduction of nanomaterials due to optical absorption and optical scattering by Ag nanoparticles and MWNTs, respectively. The crystallinity of the SnO2 thin films was not much affected by an incorporation of Ag nanoparticles and MWNTs. In the case of mixed incorporation with Ag nanoparticles and MWNTs, the sheet resistance of SnO2 thin films decreased relative to incorporation of either single component. Valence band spectral analyses of the nano-hybridized SnO2 thin films showed a relation between band structural change and electrical resistance. Direct-patterning of SnO2 hybrid films with a line-width of 30 μm was successfully performed without photoresist or dry etching. These results suggest that a micro-patterned system can be simply fabricated, and the electrical properties of SnO2 films can be improved by incorporating Ag nanoparticles and MWNTs.

장르 영화의 이데올로기는 이제 과감한 컴퓨터그래픽과 화려한 스펙터클 그리고 입체라는 새로운 기술전략으로 관객에게 승부를 걸고 있다. 하지만 그럼에도 불구하고 이데올로기에 봉합되지 않고 예술로서 영화의 책무를 끊임없이 보여주려는 노력 또한 여전히 존재한다. 그러한 노력은 폭로와 전복의 미학을 통해 가능한 것이다. 디지털은 바로 이러한 면에 있어서 이율배반적 기능을 수행하게 된다. 관객에게 거칠고 날카로운 그들의 삶을 여과 없이 보여주기 위해 디지털은 자기의 모든 장식적 껍질을 벗어버리게 되는 것이다. 디지털 0과 1의 픽셀미학은 이미지의 아방가르드적 현존을 가능하게 하며 관객의 능동적 참여를 이끌어 내게 한다. ‘국내 디지털 아방가르드 영화 <자본당 선언, 만국의 노동자여 축적하라>는 바로 이러한 진화의 한 축을 이루는 진보적인 국내 실험영화 중 하나이다. 이에 본 연구는 국내 디지털 아방가르드 영화<자본당 선언, 만국의 노동자여 축적하라>의 숭고미학에 있어서 탈이데올로기적 특징을 리오타르의 이론을 통하여 고찰해 볼 것이다.

MgTiO3 thin films were prepared by r.f. magnetron sputtering in order to prepare miniaturized NPO type MLCCs.MgTiO3 films showed a polycrystalline structure of ilmenite characterized by the appearance of (110) and (202) peaks. Theintensity of the peaks decreased with an increase in the chamber pressure due to the decrease of crystallinity which resultedfrom the decrease of kinetic energy of the sputtered atoms. The films annealed at 600oC for 60min. showed a fine grainedmicrostructure without micro-cracks. The grain size and roughness of the MgTiO3 films decreased with the increase of chamberpressure. The average surface roughness was 1.425~0.313nm for MgTiO3 films prepared at 10~70mTorr. MgTiO3 films showeda dielectric constant of 17~19.7 and a dissipation factor of 2.1~4.9% at 1MHz. The dielectric constant of the films is similarto that of bulk ceramics. The dielectric constant and the dissipation factor decreased with the increase of the chamber pressuredue to the decrease of grain size and crystallinity. The leakage current density was 10−5~10−7A/cm2 at 200kV/cm and this valuedecreased with the increase of the chamber pressure. The small grain size and smooth surface microstructure of the filmsdeposited at high chamber pressure resulted in a low leakage current density. MgTiO3 films showed a near zero temperaturecoefficient and satisfied the specifications for NPO type materials. The dielectric properties of the MgTiO3 thin films preparedby sputtering suggest the feasibility of their application for MLCCs.

We investigated the electrochemical properties for Langmuir-Blodgett(LB) films mixed with l-bromotetradecane(Cl4), l-bromohexadecane(Cl6), and l-bromooctadecane(Cl8). The alkyl bromides mixture was deposited by using the Langmuir-Blodgett method on the ITO glass. The electrochemical properties measured by using cyclic voltammetry with a three-electrode system(an Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode) at various concentrations(0.5, 1.0, 1.5 and 2.0 N) of NaClO4 solution. A measuring range was reduced from initial potential to -1350 m V, continuously oxidized to 1650 mV. The scan rate was 100 mV/s. As a result, LB films of Cl4, Cl6, and Cl8 mixture monolayers appeared irreversible process caused by only the oxidation current from the cyclic voltammogram. The diffusivity(D) effect of LB films decreased with increasing of alkyl bromides amount.

A non-volatile resistive random access memory (RRAM) device with a Cr-doped SrZrO3/SrRuO3 bottom electrode heterostructure was fabricated on SrTiO3 substrates using pulsed laser deposition. During the deposition process, the substrate temperature was 650˚C and the variable ambient oxygen pressure had a range of 50-250 mTorr. The sensitive dependences of the film structure on the processing oxygen pressure are important in controlling the bistable resistive switching of the Cr-doped SrZrO3 film. Therefore, oxygen pressure plays a crucial role in determining electrical properties and film growth characteristics such as various microstructural defects and crystallization. Inside, the microstructure and crystallinity of the Cr-doped SrZrO3 film by oxygen pressure were strong effects on the set, reset switching voltage of the Cr-doped SrZrO3. The bistable switching is related to the defects and controls their number and structure. Therefore, the relation of defects generated and resistive switching behavior by oxygen pressure change will be discussed. We found that deposition conditions and ambient oxygen pressure highly affect the switching behavior. It is suggested that the interface between the top electrode and Cr-doped SrZrO3 perovskite plays an important role in the resistive switching behavior. From I-V characteristics, a typical ON state resistance of 100-200 Ω and a typical OFF state resistance of 1-2 kΩ, were observed. These transition metal-doped perovskite thin films can be used for memory device applications due to their high ON/OFF ratio, simple device structure, and non-volatility.

We investigated the carbon monoxide (CO) gas-sensing properties of nanostructured Al-doped zinc oxide thin films deposited on self-assembled Au nanodots (ZnO/Au thin films). The Al-doped ZnO thin film was deposited onto the structure by rf sputtering, resulting in a gas-sensing element comprising a ZnO-based active layer with an embedded Pt/Ti electrode covered by the self-assembled Au nanodots. Prior to the growth of the active ZnO layer, the Au nanodots were formed via annealing a thin Au layer with a thickness of 2 nm at a moderate temperature of 500˚C. It was found that the ZnO/Au nanostructured thin film gas sensors showed a high maximum sensitivity to CO gas at 250˚C and a low CO detection limit of 5 ppm in dry air. Furthermore, the ZnO/Au thin film CO gas sensors exhibited fast response and recovery behaviors. The observed excellent CO gas-sensing properties of the nanostructured ZnO/Au thin films can be ascribed to the Au nanodots, acting as both a nucleation layer for the formation of the ZnO nanostructure and a catalyst in the CO surface reaction. These results suggest that the ZnO thin films deposited on self-assembled Au nanodots are promising for practical high-performance CO gas sensors.

Transparent conductive films of single wall carbon nanotube (SWCNT) were prepared by spray coating method. The effect of acid treatment on the SWCNT films was investigated. The field emission scanning electron microscope (FESEM) shows that acid treatment can remove dispersing agent. The electrical and optical properties of acid-treated films were enhanced compared with those of as deposited SWCNT films. Nitric acid (HNO3), sulfuric acid (H2SO4), nitric acid:sulfuric acid (3:1) were used for post treatment. Although all solutions reduced sheet resistance of CNT films, nitric acid can improve electrical characteristics efficiently. During acid treatment, transmittance was increased continuously with time. But the sheet resistance was decreased for the first 20 minutes and then increased again. Post-treated SWCNT films were transparent (85%) in the visible range with sheet resistance of about 162Ω/sq. In this paper we discuss simple fabrication, which is suitable for different types of large-scale substrates and simple processes to improve properties of SWCNT films.

CuInSe2 (CIS) thin films were electrodeposited on Mo-coated glass substrates in acidic solutionscontaining Cu2+, In3+, and Se4+ ions, depending on deposition parameters such as deposition potential (-0.4 to-0.8V[SCE]) and pH (1.7 to 1.9). The influences of PH and deposition potential on the atomic composition ofCu, In, and Se in the deposited films were observed. The best chemical composition, approaching 1:1:2 atomicratio for the elements, was achieved at -0.5V (SCE) and pH 1.8. The as-deposited films showed low crystallinityand were annealed at 300 to 500oC for 30 min to improve crystallization. The surface morphologies,microstructures, and crystallographic structures of the annealed films as well as the as-deposited films wereanalyzed with AFM, SEM, and XRD. The defects of spherical particles appeared on the surfaces of CIS thinfilms in the as-deposited state and decreased in size and number with increasing annealing temperatures.Additionally, the crystallization to chalcopyrite structure and surface roughness (Ra) of the as-deposited thinfilms were improved with the annealing process.

This cycloaddition of [70]fullerene with methyl azidoacetate in benzene under ultrasonic irradiated condition afforded the closed [5,6]-bridged aziridino[70]fullerene derivative, which was unusual product of cycloaddition to the 5,6-junction of fullerene. Its structure was determined by FAB-MS, UV-vis, 1H- and 13C-NMR spectral data. The closed [5,6]-bridged aziridino[70]fullerene-functionalized gold nanoparticle films were self-assembled using the layer-by-layer method on the reactive of glass slides functionalized with 3-mercaptopropyl trimethoxysilane. The functionalized glass slides were alternately soaked in the solution containing closed the [5,6]-bridged aziridino[70]fullerene and 4-aminothiophenoxide/hexanethiolate-protected gold nanoparticles. The closed [5,6]-bridged aziridino[70]fullerene-functionalized gold nanoparticle films have grown up to 5 layers depending on the immersion time. The self-assembled nanoparticle multilayer films were characterized using UV-vis spectroscopy showed that the surface plasmon band of gold at 527 nm gradually became more evident as successive layers were added to the films.

BiFeO3 (BFO) thin films were prepared on Pt/TiO2/Si substrate by r.f. magnetron sputtering. The effects of deposition pressure on electrical properties were investigated using measurement of dielectric properties, leakage current and polarization. When BFO targets were prepared, Fe atoms were substituted with Mn 0.05% to increase electrical resistivity of films. (Fe+Mn)/Bi ratio of BFO thin films increases with increasing partial pressure of O2 gas. The deposited films showed the only BFO phase at 10 mTorr, the coexistence of BFO and Bi2O3 phase at 30-50 mTorr, and the only Bi2O3 phase at 70 mTorr. The crystallinity of BFO films was reduced due to the higher Bi contents and the decrease of surface mobility of atoms at high temperature. The porosity and surface roughness of films increased with the increase of the deposition pressure. The films deposited at high pressure showed low dielectric constant and high leakage current. The dielectric constant of films deposited at various deposition pressures was 84~153 at 1 kHz. The leakage current density of the films deposited at 10~70 mTorr was about 7×10.6~1.5×10.2A/cm2 at 100 kV/cm. The leakage current was found to be closely related to the morphology and composition of the BFO films. BFO films showed poor P-E hysteresis loops due to high leakage current.

Thin films of single-wall carbon nanotubes (SWNT) with various thicknesses were fabricated, and their optical andelectrical properties were investigated. The SWNTs of various thicknesses were directly coated in the arc-discharge chamberduring the synthesis and then thermally and chemically purified. The crystalline quality of the SWNTs was improved by thepurification processes as determined by Raman spectroscopy measurements. The resistance of the film is the lowest for thechemically purified SWNTs. The resistance vs. thickness measurements reveal the percolation thickness of the SWNT film tobe ~50nm. Optical absorption coefficient due to Beer-Lambert is estimated to be 7.1×10-2nm-1. The film thickness for 80%transparency is about 32nm, and the sheet resistance is 242Ω/sq. The authors also confirmed the relation between electricalconductance and optical conductance with very good reliability by measuring the resistance and transparency measurements.

본 연구는 일반적으로 이용되는 EVA 필름과 비교하여 폴리올레핀(PO), 불소, 방적, 방무, 보온필름 등의 기능성필름이 토마토의 품질에 어떤 영향을 미치는 가를 구명하고자 하였다. 분광투과특성에 있어 자외선은 불소필름이 가장 많았고 PO필름이 가장 적었으며, PAR는 불소, 보온, PO필름 등이 많았으며, 근적외선도 EVA에 비해 기능성필름이 많은 경향이었다. 전체광선의 투과율은 불소, 방무, 방적, PO, 보온, EVA 순으로 높았다. 하우스 내 주간온도는 광투과율 차이에 의해 불소필름이 가장 높고 EVA가 가장 낮았으며, 야간온도는 필름이 두꺼운 방적 및 PO필름이 가장 높게 유지되었다. 기능성필름은 EVA에 비해 과실 당도가 0.2~0.5˚Bx 더 높았고, 과실 내 라이코펜 함량이 15~30% 높게 나타났다. 따라서 토마토의 당도, 라이코펜 함량 등의 품질향상을 위해서는 일반필름 대신에 기능성필름을 이용하는 것이 효과적일 것으로 판단되었다.