This study is about the optical properties of InP-based quantum dot nanoparticles depending on their core/shell structure. The need to synthesize non-cadmium-based quantum dot nanoparticles with high quantum efficiency has become necessary due to the harmful effects of the element cadmium. We synthesized three types of quantum dot nanoparticles in 2000ml three-necked flasks by varying the synthesis temperature and time to have the same PL spectra according to the composition of the core and shell. The PL spectra, absolute quantum efficiency, and nanoparticle size were compared and analyzed according to the composition at red emission wavelengths of 614, 616, and 630 nm. InP/ZnSe/ZnS nanoparticles were synthesized with the highest PL-AQY of 94% at 614 μm, and Ga-doped InP/GaP/ZnSe/ZnS nanoparticles were synthesized with the highest PL-AQY of 97% at 616 μm. InZnP/ZnSe/ZnS nanoparticles with alloy cores were able to synthesize quantum dot nanoparticles with a peak PL-AQY of 98% at 630μm.

Colloidal quantum dot (QDs) have emerged as a crucial building block for LEDs due to their size-tunable emission wavelength, narrow spectral line width, and high quantum efficiency. Tremendous efforts have been dedicated to improving the performance of quantum dot light-emitting diodes (QLEDs) in the past decade, primarily focusing on optimization of device architectures and synthetic procedures for high quality QDs. However, despite these efforts, the commercialization of QLEDs has yet to be realized due to the absence of suitable large-scale patterning technologies for high-resolution devices., This review will focus on the development trends associated with transfer printing, photolithography, and inkjet printing, and aims to provide a brief overview of the fabricated QLED devices. The advancement of various quantum dot patterning methods will lead to the development of not only QLED devices but also solar cells, quantum communication, and quantum computers.

This study aimed to a sign device using quantum dot film. We synthesized quantum dots with an absolute quantum yield of more than 95% using the solution process method, coated the quantum dot film by mixing it with acrylate resin, made a sign device, and studied the improvement of visibility, and obtained the following conclusions. Quantum dots with absolute quantum yield of 97.63% at 535 nm and 97.85% at 615 nm were synthesized by doping InP with GaP and stacking ZnSe and ZnS composite shells. The synthesized quantum dots were mixed with acrylate syrup at a weight ratio of 10% to coat a film with a luminance uniformity of more than 95%, and the quantum dot film was attached to a luminous display with an insulation capacity of 500 V, an insulation resistance of 99.9 GΩ, and a luminance of 688.5 ㏅/㎠ at white region and 122.3 ㏅/㎠ at red region.

Cu-doped ZnSe quantum dots were successfully synthesized in an aqueous solution using an internal doping method. The effects of ligand type, CuSe synthesis temperature, and heating time on Cu-doped ZnSe synthesis were systematically investigated. Of MPA, GSH, TGA, and NAC used as ligands, MPA was the optimal ligand as determined by PL spectrum analysis. In addition, the emission wavelength was found to depend on the synthesis temperature of the internal doping core of CuSe. As the temperature increased, the doping of Cu2+ was enhanced, and the emission wavelength band was redshifted; accordingly, the emission peaks moved from blue to green (up to 550 nm). Thus, the synthesis of Cu:ZnSe using internal doping in aqueous solutions is a potential method for ecomanufacturing of colortuned ZnSe quantum dots for display applications.

This study described a way of developing a resin for deviceizing quantum dots. Furthermore, the following conclusions were obtained by developing light curable syrup and UV curable syrup. First, The viscosity of the mixed resin decreased as the content of the diluent increased, and the value was bewteen 4,310 and 1,473cps. Second, haze was measured by using NDH 5000, and all of the synthesized syrups were obtained a haze value of 1% or less with a transmittance of 95% or more in the visible light region. Third, the viscosity of the mixed resin decreased as the temperature increased, and at this point, the viscosity showed a value of 4,219 to 1,128cps. Lastly, As a result of measuring the viscosity of the resin before and after mixing the quantum dot nanoparticles, it appears to be little change.

본 논문에서는 반도체 특성의 단일벽 탄소나노튜브(semi-SWNTs)와 페로브스카이트(perovskite) 양자 점을 혼합하여 SWNT의 높은 전하 이동 특성과 양자점의 고효율 광전 특성을 동시에 가지는 용액공정 가 능한 기반 고성능 광센서를 개발하기 위한 연구를 수행하였다. 직경이 작은 SWNT를 공액 구조 고분자 반도체를 이용해 선택적으로 분리/분산하는 방법으로 제조하여 포토트랜지스터의 반도체 채널 층으로 활 용하고, 가시광 빛에 높은 흡광도를 가지는 양자점을 다양한 조성과 구조를 가지는 광활성층으로 제조하 여 그 특성을 비교 분석하였다. 이 결과 semi-SWNTs와 페로브스카이트 양자점 모두 단독으로 TFT에 사 용하였을 경우 우수한 트랜지스터 특성과는 별개로 광전효과가 크게 나타나지 않았으며, 두 종류 이상의 반도체 소재를 융합하여 사용할 경우 양자점에 흡수된 빛에 의해 엑시톤이 형성되고 이종 접합 계면에서 전자와 정공의 분리가 쉽게 이루어지도록 유도함으로써 낮은 광량에서도 높은 효율을 가지는 포토트랜지 스터를 개발할 수 있었다. 향후 지속적인 연구개발을 통해 고유연/저가 광 센서 제품 개발과 레이더, 이미 지 센서, 웨어러블 헬스케어 등의 다양한 분야에 하이브리드 반도체 포토트랜지스터가 응용될 수 있을 것 으로 기대한다.

In this study, a mixed resin containing Bis-GMA was developed to produce a light-emitting sign using quantum dots. As a result of measuring the viscosity, color coordinates change, and luminance of the mixed resin, the following conclusions were obtained. The viscosity of the mixed resin decreased as the content of the diluent increased, and viscosity values ​​ranged from 3,627 to 1,349cps showed as a result. The viscosity of the mixed resin decreased as the temperature increased, and the viscosity showed a value of 5,156 to 1,132cps. For the optical properties of InP/GaP/ZnSe/ZnS quantum dots, the absolute quantum efficiency was 91% at 522nm and 90% at 618nm when the gallium was 0.01%. The luminance of the light-emitting sign using the resin mixed with quantum dots was showed 142.6cd/m2 in white and 104.2cd/m2 in the red region.

양자점의 리간드 교환을 통해 절대양자효율과 안정성이 향상되는 현상에 대해 연구를 수행하였다. 이를 위해 곁가지 구조를 가지는 리간드로서 2-ethylhexyl thioglycolate를 사용한 표면 부동태화를 통해 올레이트 리간드를 곁가지 티올 리간드로 교환하였다. 곁가지 구조의 티올 리간드는 패로브스카이트 양자점의 Br 결함을 채워 절대양자효율이 30%에 서 80%로 급격히 향상되었다. 또한 용액상에서 안정성이 우수하고 필름 평가에서도 광학 특성이 향상됨을 확인하였다. FT-IR 분석을 통해 티올 리간드가 올레이트 리간드를 떼어내고 패로브스카이트 양자점 표면에 붙음을 확인하였고 XRD 분석을 통해 교환된 티올 리간드가 결정 구조를 변형시키지 않음을 확인하였다.

In this study, quantum dot-sensitized solar cells (QDSSC) using CdSe/ZnS quantum dots (QD) of various sizes with green, yellow, and red colors are developed. Quantum dots, depending their different sizes, have advantages of absorbing light of various wavelengths. This absorption of light of various wavelengths increases the photocurrent production of solar cells. The absorption and emission peaks and excellent photochemical properties of the synthesized quantum dots are confirmed through UV-visible and photoluminescence (PL) analysis. In TEM analysis, the average sizes of individual green, yellow, and red quantum dots are shown to be 5 nm, 6 nm, and 8 nm. The J-V curves of QDSSC for one type of QD show a current density of 1.7 mA/cm2 and an open-circuit voltage of 0.49 V, while QDSSC using three type of QDs shows improved electrical characteristics of 5.52 mA/cm2 and 0.52 V. As a result, the photoelectric conversion efficiency of QDSSC using one type of QD is as low as 0.53 %, but QDSSC using three type of QDs has a measured efficiency of 1.4 %.

탄소 양자점 (CQDs, Carbon Quantum Dots)은 크기에 따라 광 물리적 특성이 다르게 나타나는 소재로 각광을 받고 있지만 용매의 호환성과 화학적 안정성은 개선해야 할 문제로 남아있다. 따라서 CQDs에 여러 소수성 기능기를 도 입하여 고분자 미셀 내부에 들어갈 수 있도록 표면을 개질하였다. 탄소 양자점이 함유된 고분자 미셀의 광 물리적 특성은 흡광, 형광 분광법으로 측정하였다.

물 부족을 포함한 기후 변화의 해로운 결과는 효과적인 정수에 대한 관심을 가져왔다. 또한, 수질 오염 수준이 높 아지고 환경 파괴 수준이 심해지면서 오염 물질을 제거하려는 방안들이 요구되고 있다. 물을 정화하기 위해 반투막을 통한 삼투압 절차들을 사용할 수 있으며, 최근 연구에 따르면 탄소 양자점(CQD), 그래핀 양자점(GQD) 및 산화 그래핀 양자점 (GOQD)을 포함한 나노입자를 복합 박막(TFC)에 합체하면 유사한 수준의 염 거부율을 유지하면서 물흐름을 증가시킬 수 있 다. 이러한 효과 외의 여러 가지 효과가 있지만 그 중에서도 친수성을 높이고, 살균 성질을 보이고, 방오 특성으로 인해 박테 리아 및 기타 미생물의 축적을 방지하면서 막의 효과가 감소하는 것을 막는 것을 보여준다. 이 보고서는 양자점이 합체된 정 수용 복합 막에서 양자점의 제조 과정, 응용, 기능성, 성질 및 역할을 논의한다.

A transparent quantum dot (QD)-based light-emitting diode (LED) with silver nanowire (Ag NW) and indium-tin oxide (ITO) hybrid electrode is demonstrated. The device consists of an Ag NW-ITO hybrid cathode (-), zinc oxide, poly (9- vinylcarbazole) (PVK), CdSe/CdZnS QD, tungsten trioxide, and ITO anode (+). The device shows pure green-color emission peaking at 548 nm, with a narrow spectral half width of 43 nm. Devices with hybrid cathodes show better performances, including higher luminance with higher current density, and lower threshold voltage of 5 V, compared with the reference device with a pure Ag NW cathode. It is worth noting that our transparent device with hybrid cathode exhibits a lifetime 9,300 seconds longer than that of a device with Ag NW cathode. This is the reason that the ITO overlayer can protect against oxidization of Ag NW, and the Ag NW underlayer can reduce the junction resistance and spread the current efficiently. The hybrid cathode for our transparent QD LED can applicable to other quantum structure-based optical devices.

We investigate the characteristics of self-assembled quantum dot infrared photodetectors(QDIPs) based on doping level. Two kinds of QDIP samples are prepared using molecular beam epitaxy : n+-i(QD)-n+ QDIP with undoped quantum dot(QD) active region and n+-n−(QD)-n+ QDIP containing Si direct doped QDs. InAs QDIPs were grown on semi-insulating GaAs (100) wafers by molecular-beam epitaxy. Both top and bottom contact GaAs layer are Si doped at 2×1018/cm3. The QD layers are grown by two-monolayer of InAs deposition and capped by InGaAs layer. For the n+-n−(QD)-n+ structure, Si dopant is directly doped in InAs QD at 2×1017/cm3. Undoped and doped QDIPs show a photoresponse peak at about 8.3 μm, ranging from 6~10 μm at 10 K. The intensity of the doped QDIP photoresponse is higher than that of the undoped QDIP on same temperature. Undoped QDIP yields a photoresponse of up to 50 K, whereas doped QDIP has a response of up to 30 K only. This result suggests that the doping level of QDs should be appropriately determined by compromising between photoresponsivity and operating temperature.

Quantum dots (QDs) are an attractive material for application in solar energy conversion devices because of their unique properties including facile band-gap tuning, a high-absorption coefficient, low-cost processing, and the potential multiple exciton generation effect. Recently, highly efficient quantum dot-sensitized solar cells (QDSCs) have been developed based on CdSe, PbS, CdS, and Cu-In-Se QDs. However, for the commercialization and wide application of these QDSCs, replacing the conventional rigid glass substrates with flexible substrates is required. Here, we demonstrate flexible CISe QDSCs based on vertically aligned TiO2 nanotube (NT) electrodes. The highly uniform TiO2 NT electrodes are prepared by two-step anodic oxidation. Using these flexible photoanodes and semi-transparent Pt counter electrodes, we fabricate the QDSCs and examine their photovoltaic properties. In particular, photovoltaic performances are optimized by controlling the nanostructure of TiO2 NT electrodes

페로브스카이트 양자점에 물을 첨가하여 절대양자효율과 안정성이 향상되는 현상에 대해 연구를 수행하였다. 수분에 의해 특성이 저하되는 페로브스카이트 양자점의 일반적인 성질과 다르게 절대양자효율과 안정성이 향상되는 원인을 여러 가지 분석장비를 활용해 분석하였다. 물을 첨가했을 때 결정성이 향상되는 것을 확인하였다.

We report the properties of infrared photodetectors based on two kinds of quantum dots(QDs): i) 2.0 ML InAs QDs by the Stranski-Krastanov growth mode(SK QDs) and ii) sub-monolayer QDs by 4 × [0.3 ML/1 nm In0.15Ga0.85As] deposition(SML QDs). The QD infrared photodetector(QDIP) structure of n+-n−(QDs)-n+ is epitaxially grown on GaAs (100) wafers using molecular-beam epitaxy. Both the bottom and top contact GaAs layers are Si doped at 2 × 1018/cm3. The QD layers are grown with Si doping of 2 × 1017/cm3 and capped by an In0.15Ga0.85As layer at 495 oC. The photoluminescence peak(1.24 eV) of the SML QDIP is blue-shifted with respect to that (1.04 eV) of SK QDIPs, suggesting that the electron ground state of SML QDIP is higher than that of the SK QDIP. As a result, the photoresponse regime(~9-14 μm) of the SML QDIP is longer than that (~6-12 μm) of the SK QDIP. The dark current of the SML QDIP is two orders of magnitude smaller value than that of the SK QDIP because of the inserted Al0.08Ga0.92As layer.

Over the last decade, the study of the synthesis of semiconductor colloidal quantum dots has progressed at a tremendous rate. Colloidal quantum dots, which possess unique spectral-luminescent characteristics, are of great interest in the development of novel materials and devices, which are promising for use in various fields. Several studies have been carried out on hot injection synthesis methods. However, these methods have been found to be unsuitable for large-capacity synthesis. Therefore, this review paper introduces synthesis methods other than the hot injection synthesis method, to synthesize quantum dots with excellent optical properties, through continuous synthesis and large capacity synthesis. In addition, examples of the application of synthesized colloid quantum dots in displays, solar cells, and bio industries are provided.

Core/shell CdSe/ZnS quantum dots (QDs) are synthesized by a microfluidic reactor-assisted continuous reactor system. Photoluminescence and absorbance of synthesized CdSe/ZnS core/shell QDs are investigated by fluorescence spectrophotometry and online UV-Vis spectrometry. Three reaction conditions, namely; the shell coating reaction temperature, the shell coating reaction time, and the ZnS/CdSe precursor volume ratio, are combined in the synthesis process. The quantum yield of the synthesized CdSe QDs is determined for each condition. CdSe/ZnS QDs with a higher quantum yield are obtained compared to the discontinuous microfluidic reactor synthesis system. The maximum quantum efficiency is 98.3% when the reaction temperature, reaction time, and ZnS/CdSe ratio are 270℃, 10 s, and 0.05, respectively. Obtained results indicate that a continuous synthesis of the Core/shell CdSe/ZnS QDs with a high quantum efficiency could be achieved by isolating the reaction from the external environment.