To thoroughly analyze the mechanical properties and surface conditions of HF50S carbon fibers, the tensile properties, surface morphology, surface chemical element, surface energy, sizing agent properties, and Naval Ordnance Laboratory (NOL) ring of their composites were characterized. Furthermore, the aforementioned properties were exhaustively compared with those of T1000G carbon fibers. The results showed that the tensile strength, modulus, and elongation of the HF50S carbon fibers were 6638 MPa, 297 GPa, and 2.2%, respectively, thus demonstrating that the mechanical properties of the HF50S carbon fibers were on par with those of the T1000G carbon fibers, in addition, the coefficient of variation (Cv) indices of HF50S carbon fiber were below 3%, indicating good stability. The HF50S carbon fibers have a smooth surface without grooves, which is analogous to that of the T1000G carbon fibers prepared by the typical dry jet–wet spinning process. The main component of the sizing agent of the HF50S carbon fibers is an epoxy resin, which is also used for the preparation of epoxy matrix composites. Because the HF50S carbon fiber surface has greater O and N contents than the T1000G carbon fiber surface, the HF50S carbon fibers have more active functional groups and higher surface activity. The surface energy of the HF50S carbon fibers is 30.13 mJ/m2, which is higher than that of the T1000G carbon fibers (28.42 mJ/m2). Owing to the higher strength and surface activity of the HF50S carbon fibers than those of the T1000G carbon fibers, the strength and strength conversion of NOL ring based on the former are slightly higher than those of that prepared using the latter.

When disposing of spent nuclear fuel, there is a risk of exposure that could exceed the annual allowable dose due to human intrusion after the institutional control period. Therefore, it can be treated with the pyroprocess, but the decontamination factor is not sufficient, and an additional actinide recovery is required because molten waste salt-containing actinide is generated. In the case of reducing the element in the spent molten salt through an electrochemical method using a liquid Bi electrode, it is difficult to separate only the actinide element because the two-element groups are reduced together due to the large concentration difference between the actinide and the rare earth element. Therefore, a process of forming a Bi intermetallic compound using a liquid Bi electrode, which has higher element separation efficiency than a liquid Cd electrode, and physically separating the Bi intermetallic compound using the difference in density of the produced compound has been proposed. For this, it is necessary to understand the properties and density separation of the intermetallic compound to be produced, and experiments were planned and conducted for this purpose. Various metals were added to the molten Bi to form an intermetallic compound, and an analysis device such as SEM was used to determine the intermetallics distribution, composition, and internal structure. As the added metal, Ce is a representative element for lanthanide, and Hf with the most similar intermetallic density, decomposition temperature, and standard reduction potential to U, and U as a substitute element for actinide was adopted. As a result of SEM and EDS analysis, it was confirmed that the separation was made in Bi due to the density difference between the produced intermetallic compounds. A Ce-Bi intermetallic compound was observed in the upper part, Hf at a concentration smaller than the error range was detected, and a Hf-Bi intermetallic compound which containing high concentration of Ce was observed in the lower part. Separation of high-purity Ce seems to be possible in the upper part, and it seems difficult to separate high-purity Hf in the lower part. Therefore, to separate highpurity Hf, an additional process suitable for it seems to be necessary.

Recently, high-entropy carbides have attracted considerable attention owing to their excellent physical and chemical properties such as high hardness, fracture toughness, and conductivity. However, as an emerging class of novel materials, the synthesis methods, performance, and applications of high-entropy carbides have ample scope for further development. In this study, equiatomic (Hf-Ti-Ta-Zr-Nb)C high-entropy carbide powders have been prepared by an ultrahigh- energy ball-milling (UHEBM) process with different milling times (1, 5, 15, 30, and 60 min). Further, their refinement behavior and high-entropy synthesis potential have been investigated. With an increase in the milling time, the particle size rapidly reduces (under sub-micrometer size) and homogeneous mixing of the prepared powder is observed. The distortions in the crystal lattice, which occur as a result of the refinement process and the multicomponent effect, are found to improve the sintering, thereby notably enhancing the formation of a single-phase solid solution (high-entropy). Herein, we present a procedure for the bulk synthesis of highly pure, dense, and uniform FCC single-phase (Fm3m crystal structure) (Hf-Ti-Ta-Zr-Nb)C high-entropy carbide using a milling time of 60 min and a sintering temperature of 1,600oC.

최근 국제적으로 신재생 에너지 개발이 활발함에 따라 풍력발전의 비중이 확대되고 있다. 특히 고품질의 풍력자원을 이용하고 소음 피해를 최소화하기 위하여 해안에서 멀리 떨어진 해역에 대규모 풍력단지가 조성되는 추세이다. 해상에 풍력단지가 건설됨에 따라 영해나 영공 감시를 위한 레이더에 간섭을 일으키는 문제 이외에도 해상에서 육상으로 송신하는 조난통신을 간섭하는 지에 대한 분석이 필요하다. 이를 위해서 본 연구에서는 선박에서 MF 또는 HF 대역의 전자파를 송신할 경우, 선박과 육상 기지국 사이에 위치한 해상풍력 발전단지가 송신된 전자파에 대한 간섭 여부를 분석하였다. 이를 위해 대상지역을 수치지형도와 풍력발전기 CAD모델을 활용하여 주변 환경 및 해상풍력 발전단지를 전자기학적으로 모델링하였다. 파장에 비해 광범위한 지역에 대한 전파 분석이므로 고주파 분석기법이 타당하나, 적용할 고주파 분석기법을 주변해역과 지형을 간략화하여 저주파 분석기법으로 먼저 검증하였다. 해상풍력 발전단지 부근에서 송신한 신호에 대해 육상기지국에서 수신한 전력을 분석한 결과, 발전단지가 설치되더라도 거의 동일한 수준으로 전파를 수신할 수 있었다. 이는 풍력발전기가 대형 구조물이기는 하나 타워의 직경은 수 미터에 불과하므로 지향성이 없고 파장이 긴 MF 및 HF 대역에 대해서는 큰 장애물로 작용하지 않기 때문으로 판단된다.

Recent discoveries of ferroelectric properties in ultrathin doped hafnium oxide (HfO2) have led to the expectation that HfO2 could overcome the shortcomings of perovskite materials and be applied to electron devices such as Fe-Random access memory (RAM), ferroelectric tunnel junction (FTJ) and negative capacitance field effect transistor (NC-FET) device. As research on hafnium oxide ferroelectrics accelerates, several models to analyze the polarization switching characteristics of hafnium oxide ferroelectrics have been proposed from the domain or energy point of view. However, there is still a lack of in-depth consideration of models that can fully express the polarization switching properties of ferroelectrics. In this paper, a Zr-doped HfO2 thin film based metal-ferroelectric-metal (MFM) capacitor was implemented and the polarization switching dynamics, along with the ferroelectric characteristics, of the device were analyzed. In addition, a study was conducted to propose an applicable model of HfO2-based MFM capacitors by applying various ferroelectric switching characteristics models.

In this study, we investigate the deformation behavior of Hf44.5Cu27Ni13.5Nb5Al10 metallic glass powder under repeated compressive strain during mechanical milling. High-density (11.0 g/cc) Hf-based metallic glass powders are prepared using a gas atomization process. The relationship between the mechanical alloying time and microstructural change under phase transformation is evaluated for crystallization of the amorphous phase. Planetary mechanical milling is performed for 0, 40, or 90 h at 100 rpm. The amorphous structure of the Hf-based metallic glass powders during mechanical milling is analyzed using differential scanning calorimetry (DSC) and X-ray diffraction (XRD). Microstructural analysis of the Hf-based metallic glass powder deformed using mechanical milling reveals a layered structure with vein patterns at the fracture surface, which is observed in the fracture of bulk metallic glasses. We also study the crystallization behavior and the phase and microstructure transformations under isothermal heat treatment of the Hf-based metallic glass.

In this study, ultra-fine soft-magnetic micro-powders are prepared by high-pressure gas atomization of an Fe-based alloy, Fe-Hf-B-Nb-P-C. Spherical powders are successfully obtained by disintegration of the alloy melts under high-pressure He or N2 gas. The mean particle diameter of the obtained powders is 25.7 μm and 42.1 μm for He and N2 gas, respectively. Their crystallographic structure is confirmed to be amorphous throughout the interior when the particle diameter is less than 45 μm. The prepared powders show excellent soft magnetic properties with a saturation magnetization of 164.5 emu/g and a coercivity of 9.0 Oe. Finally, a toroidal core is fabricated for measuring the magnetic permeability, and a μr of up to 78.5 is obtained. It is strongly believed that soft magnetic powders prepared by gas atomization will be beneficial in the fabrication of high-performance devices, including inductors and motors.

The electrical properties and surface morphology changes of a silicon wafer as a function of the HF concentration as the wafer is etched were studied. The HF concentrations were 28, 30, 32, 34, and 36 wt%. The surface morphology changes of the silicon wafer were measured by an SEM (80˚ tilted at ×200) and the resistivity was measured by assessing the surface resistance using a four-point probe method. The etching rate increased as the HF concentration increased. The maximum etching rate 27.31 μm/min was achieved at an HF concentration of 36 wt%. A concave wave formed on the wafer after the wet etching process. The size of the wave was largest and the resistivity reached 7.54 ohm·cm at an 30 wt% of HF concentration. At an HF concentration of 30 wt%, therefore, a silicon wafer should have good joining strength with a metal backing as well as good electrical properties.

This study shows the effects of deionized (DI) rinse and oxide HF wet etch processes on silicon substrate during a photolithography process. We found a fail at the wafer center after DI rinse step, called Si pits, during the fabrication of a complementary metal-oxide-semiconductor (CMOS) device. We tried to find out the mechanism of the Si pits by using the silicon wafer on CMOS fabrication and analyzing the effects of the friction charge induced by the DI rinsing. The key parameters of this experiment were revolution per minute (rpm) and time. An incubation time of above 10 sec was observed for the formation of Si pits and the rinsing time was more effective than rpm on the formation of the Si pits. The formation mechanism of the Si pits and optimized rinsing process parameters were investigated by measuring the charging level using a plasma density monitor. The DI rinse could affect the oxide substrate by a friction charging phenomenon on the photolithography process. Si pits were found to be formed on the micro structural defective site on the Si substrate under acceleration by developed and accumulated charges during DI rinsing. The optimum process conditions of DI rinse time and rpm could be established through a systematic study of various rinsing conditions.

고온구조용 재료로 사용이 기대되는 Al3Hf금속간 화합물의 단점인 낮은 연성을 개선하기 위하여 SPEX mill을 이용한 기계적 합금화 과정에서의 Ll2상 생성거동과 이에 미치는 제3원소의 영향, 그리고 이들 금속간 화합물의 진공열간 압축성형 거동을 조사하였다. Al과 Hf 혼합분말을 기계적 합금화한 결과에 따르면 6시간 milling후에 L2Hf 금속간 화합물이 생성되었으며, 이때 결정립 크기가 7~8nm 정도인 nanocrystalline이 형성되었다. Cu를 첨가한 경우에는 10시간 milling 후에 2원계와 동일한 Ll2구조의 금속간 화합물이 생성되었으며, 격자상수는 Cu의 함량이 증가함에 따라 감소하였다. 2원계 Al3Hf 금속간 화합물의 경우에 Ll2상에서 D023 상으로의 변태 시작온도는 380˚C 정도였으며, 변태 종료온도는 열처리시간에 따라 480˚C에서 550˚C 정도를 나타내었다. Cu 함량이 증가함에 따라 변태 시작온도는 상승하였으며 10at.%의 Cu 첨가는 변태 시작온도를 700˚C까지 상승시켰다. 2원계 Al-25at.%Hf 혼합분말의 VHP 성형시 750MPa, 400˚C, 3시간에서 약 89%의 비이론 밀도를 얻을 수 있었다. 같은 온도에서 Cu를 10at.% 첨가한 경우의 VHP 성형시 90%정도의 비이론 밀도를 보여 2원계 A13Hf보다 성형성이 약간 증가하는 것을 볼 수 있었으며, 성형온도를 500˚C로 증가시킨 경우에는 Ll2상에서 D023상으로의 상변화나 결정립의 증가없이 약 92.5%의 비이론 밀도를 얻을 수 있었다.

일방향응고법으로 IN792+Hf 초내열합금의 응고속도에 따른 응고거동의 변화에 대해 연구하였다. 조직관찰을 통해 각 상의 응고과정과 석출거동을 분석하였다 일방향응고시 응고속도가 감소하면 문자형의 탄화물은 면상 탄화물로 변화하였고 γ상과 탄화물의 결합은 탄화물의 수지상 성장에 의한 것임을 확인할 수 있었다. 긴 막대형상의 탄화물이 0.5μm/s의 응고속도에서 입계를 따라 형성되었으며 잔류액상지역에서 γ'형성원소가 풍부한 구역과 고갈된 구역이 발견되었다. 공정 γ/γ'은 형성원소가 풍부한 구역에서 핵생성하였으며 공정 γ/γ'의 형성은 잔류액상지역의 (Ti+Hf+Ta+W)/Al 비율을 높여 η상의 석출을 유발하였다. 느린 응고속도에서는 잔류액상지역으로부터의 충분한 역확산으로 (Ti+Hf+Ta+W)/Al 비율이 낮아져 η상의 석출이 억제되었다.

Ta(TaC) 필라멘트를 이용한 HF-CVD 법에 의하여 Si3N4, SiC, WC, Al2O3를 기판으로 다이아몬드 박막을 증착하고, 그 밀착특성을 평가하였다. 로내의 CH4농도를 10%로 높게 하였을 경우에는 막중에 graphitic(amorphous) carbon이 생성됨을 확인할 수 있었다. 박막을 12μm 정도까지 두껍게 하면, WC기판에서는 부분적 박리형상이 관찰되었으나, Si3N4를 기판으로 하였을 경우에는 안정한 박막을 얻을 수 있었다. Indentation test 결과로부터 grainding에 의한 기판표 처리가 밀착성 향상에 효과적이라는 것을 알 수 있었다. 또 compression topple test에서는 박막의 두께는 밀착성과 반비례의 관계를 가지는 것을 알 수 있었다. 수 있었다.

고온구조용 재료로의 사용이 기대되는 Al3Hf 및 Al3Ta 금속간화합물의 연성을 향상시키기 위하여 SPEX mill을 이용한 기계적합금화시 Ll2 상의 생성거동과 이에 미치는 제 3 원소의 영향을 조사하였다. Al-25%Hf 혼합분말의 경우에는 기계적합금화 6시간부터 Ll2Al3Hf 금속간화합물의 생성되었으나, Al-25%Ta의 경우에는 30시간까지도 D022 Al3Ta 금속간화합물만 생성되었고, Ll2상은 생성되지 않았다. Al-12.5%M-25%MTa(M = Cu, Zn, Mn, Fe, Ni) 조성으로 제 3 원소를 첨가하여 20시간 동안 기계적합금화한 결과 Cu과 Zn의 경우에는 D022 구조 금속간화합물만 생성되었고, Mn, Fe, Ni을 첨가한 경우에는 600˚C에서 등온열처리 후 D0(sub)22상으로 상변태되는 비정질상이 생성된 것으로 보아 이러한 제 3 원소의 첨가는 Cu와 Zn를 첨가한 경우에는 2원계와 마찬가지로 Ll2상과 D022 상간의 에너지 차이를 극복하기 못한 것으로 생각된다 한편, Al-12.5%M-25%Hf조성으로 Cu과 Zn를 첨가한 경우게는 2원계와 마찬가지로 Ll2구조의 금속간화합물이 생성되었으나, Mn, Fe, Ni을 첨가한 경우에는 Al-12.5%M-25%MTa(M = Cu, Zn, Mn, Fe, Ni) 계와 같이 비정질이 생성된 것으로 보아 Ni, Nn, Fe는 AL3X 금속간화합물을 비정질화시키는 경향이 강한 것으로 생각된다.로 생각된다.

self-aligned silicide(salicide)제조시 CoSi2의 에피텍셜 성장을 돕기 위하여 Co와 Si 사이에 내열금속층을 넣은 Co/내열금속/Si의 실리사이드화가 관심을 끌고 있다. Hf 역시 Ti와 마찬가지로 이러한 용도로 사용될 수 있다. 한편, Co/Hf 이중층 salicide 트랜지스터가 성공적으로 만들어지기 위해서는 spacer oxide 위에 증착된 Co/Hf 이중층이 열적으로 안정해야 한다. 이러한 배경에서 본 연구에서는 SiO2기판 위에 증착한 Co 단일층과 Co/Hf 이중층을 급속열처리할 때 Co와 SiO2간의 계면과 Co/Hf와 SiO2간의 계면에서의 상호반응에 대하여 조사하였다. Co 단일층과 Co/Hf 이중층은 각각 500˚C와 550˚C에서 열처리한 후 면저항이 급격하게 증가하기 시작하였는데, 이것은 Co층이 SiO2와의 계면에너지를 줄이기 위하여 응집되기 때문이다. 이 때 Co/Hf의 경우 열처리후 Hf에 의하여 SiO2 기판이 일부 분해됨으로써 Hf 산화물이 형성되었으나, 전도성이 있는 HfSix 등의 화합물은 발견되지 않았다.