Microelectromechanical systems (MEMS)-fabricated suspended devices were used to measure the in-plane electrical conductivity, Seebeck coefficient, and thermal conductivity of 304 nm and 516 nm thick InGaAlAs films with 0.3% ErAs nanoparticle inclusions by volume. The suspended device allows comprehensive thermoelectric property measurements from a single thin film or nanowire sample. Both thin film samples have identical material compositions and the sole difference is in the sample thickness. The measured Seebeck coefficient, electrical conductivity, and thermal conductivity were all larger in magnitude for the thicker sample. While the relative change in values was dependent on the temperature, the thermal conductivity demonstrated the largest decrease for the thinner sample in the measurement temperature range of 325 K to 425 K. This could be a result of the increased phonon scattering due to the surface defects and included ErAs nanoparticles. Similar to the results from other material systems, the combination of the measured data resulted in higher values of the thermoelectric figure of merit (ZT) for the thinner sample; this result supports the theory that the reduced dimensionality, such as in twodimensional thin films or one-dimensional nanowires, can enhance the thermoelectric figure of merit compared with bulk threedimensional materials. The results strengthen and provide a possible direction in locating and optimizing thermoelectric materials for energy applications.

The p-type thermoelectric compounds of based doped with 3wt% Te were fabricated by a combination of rapid solidification and spark plasma sintering (SPS) process. The effect of holding time during spark plasma sintering (SPS) on the microstructure and thermoelectric properties were investigated using scanning electron microscope (SEM), X-ray diffraction (XRD) and thermoelectric properties. The powders as solidified consisted of homogeneous thermoelectric phases. The thermoelectric figure of merit measured to be maximum () at the SPS temperature of .

Carbon-nanotube-embedded bismuth telluride (CNT/) matrix composites were fabricated by a powder metallurgy process. Composite powders, whereby 5 vol.% of functionalized CNTs were homogeneously mixed with alloying powders, were successfully synthesized by using high-energy ball milling process. The powders were consolidated into bulk CNT/ composites by spark plasma sintering process at for 10 min. The fabricated composites showed the uniform mixing and homogeneous dispersion of CNTs in the matrix. Seebeck coefficient of CNT/ composites reveals that the composite has n-type semiconducting characteristics with values ranging to with increasing temperature. Furthermore, the significant reduction in thermal conductivity has been clearly observed in the composites. The results showed that CNT addition to thermoelectric materials could be useful method to obtain high thermoelectric performance.

In this study, the thermoelectric power and resistivity of the perovskite manganiteLa0.75Ba0.25MnO3 were investigated in the temperature range 300K-1200K. The electrical resistivity andthermoelectric power indicate a transport mechanism dominated by adiabatic small-polaron hopping. Thepower factor increases from 2×10−6W/mK2 to 1×10−5W/mK2 as to the temperature increases from 400K to1200K, which indicates that the compound is highly feasible as a thermoelectric material at high temperatures.

P-type thermoelectric material was sintered by Hot Press process (HP) and the effect of boron ( at%) addition on the thermoelectric properties were reported. To enhance the thermoelectric performances, the , alloys were fabricated by mechanical alloying (MA) and HP. The carrier of p-type SiGe alloy was controlled by B-doping. The effect of sintering condition and thermoelectric properties were investigated. B-doped SiGe alloys exhibited positive seebeck coefficient. The electrical conductivity and thermal conductivity were increased at the small amount of boron content ( at%). However, they were decreased over 0.5 at% boron content. As a result, the small addition of boron improved the Z value. The Z value of 0.5 at% B doped B alloy was , the highest value among the prepared alloys

The present study is to analyze the thermoelectric properties of thermoelectric materials fabricated by the mechanical grinding process. The powders were prepared by the combination of mechanical milling and reduction treating methods using simply crushed pre-alloyed powder. The mechanical milling was carried out using the tumbler-ball mill and planetary ball mill. The tumbler-ball milling had an effect on the carrier mobility rather than the carrier concentration, whereas, the latter on the carrier concentration. The specific electric resistivity and Seebeck coefficient decreased with increasing the reduction-heat-treatment time. The thermal conductivity continuously increased with increasing the reduction-heat-treatment time. The figure of merit of the sintered body prepared by the mechanical grinding process showed higher value than one of the sintered body of the simply crushed powder.

Type I clathrate was produced by arc melting and hot pressing and thermoelectric properties were investigated. Negative Seebeck coefficient at all temperatures measured, which means that the majority carriers are electrons. Electrical conductivity decreased by increasing temperature and thermal conductivity was 0.012 W/cmK at room temperature and dimensionless thermoelectric figure of merit (ZT) was 0.01 at 873K.

Fe doped skutterudite CoSb3 with a nominal composition of FexCo1-xSb12 (0≤x≤2.5) have been synthesized by mechanical alloying (MA) of elemental powders, followed by vacuum hot pressing. Phase transformations during mechanical alloying and vacuum hot pressing were systematically investigated using XRD. Single phase skutterudite was successfully produced by vacuum hot pressing using as-milled powders without subsequent annealing. However, second phase of FeSb2 was found to exist in case of x≥2, suggesting the solubility limit of Fe with Co in this system. Thermoelectric properties as functions of temperature and Fe contents were evaluated for the hot pressed specimens. Fe doping up to x=1.5 with Co in FexCo4-xSb12 appeared to increase thermoelectric figure of merit (ZT) and the maximum ZT was found to be 0.78 at 525K in this study.

Ni-doped was prepared by the encapsulated induction melting and hot pressing, and its doping effects on the thermoelectric properties were investigated. Single phase was successfully obtained by the subsequent heat treatment at 773K for 24 hours. Nickel atoms acted as electron donors by substituting cobalt atoms. Thermoelectric properties were remarkably improved by the appropriate doping.

The encapsulated induction melting and hot pressing were employed to prepare Fe-doped skutterudites and their thermoelectric properties were investigated. Single phase was successfully obtained by the subsequent heat treatment at 773K for 24 hours. Iron atoms acted as electron acceptors by substituting cobalt atoms. Thermoelectric properties were remarkably improved by the appropriate doping. was found as an optimum composition for best thermoelectric properties in this work.