Cr thin films with O added are deposited on sapphire substrate by DC sputtering and are nitrided in NH3 atmosphere between 300 and 900 oC for various times. X-ray diffraction results show that nitridation begins at 500 oC, forming CrN and Cr2N. Cr oxides of Cr2O3 are formed at 600 oC. And, at temperatures higher than 900 oC, the intermediate materials of Cr2N and Cr2O3 disappear and CrN is dominant. The atomic concentration ratios of Cr and O are 77% and 23%, respectively, over the entire thickness of as-deposited Cr thin film. In the sample nitrided at 600 oC, a CrN layer in which O is substituted with N is formed from the surface to 90 nm, and the concentrations of Cr and N in the layer are 60% and 40%, respectively. For this reason, CrN and Cr2N are distributed in the CrN region, where O is substituted with N by nitridation, and Cr oxynitrides are formed in the region below this. The nitridation process is controlled by inter-diffusion of O and N and the parabolic growth law, with activation energy of 0.69 eV.

DLC has been attractive as semiconductor materials for solar cell due to its biological friendliness, flexible microstructures, and especially its tunable band gap. In order to fabricate high-efficiency multiband gap solar cell, it is important to control the sp3/ sp2 bonds ratio of DLC film corresponding to optical band gap (Eg). There are many references reporting the relations among the fabrication conditions, Eg, sp3/ sp2, and ID/ IG. However, a more comprehensive database is needed for controllable fabrication. Especially, the quantitative relationship of sp3/ sp2 ratio to Eg of DLC film by PECVD is unclear. In this paper, 36 sets of DLC films were fabricated by RF-PECVD. Characterization methods of XPS, Raman spectroscopy, and IR absorption have been used to determine the sp3/ sp2 ratio of DLC films. UV/visible light absorption method has applied to evaluate Eg. The Eg obtained is in the range 1.45–3.0 eV. Our results agree well with the references. The XPS spectra gives a linear relationship as Eg = − 0.161 (± 0.136) + 26.095 (± 1.704) · {sp3 (XPS)/sp2}, the Raman spectra shows a linear function that Eg = 1.327 (± 0.046) + 0.428 (± 0.036) · (ID/IG), as well as the FTIR analysis demonstrates that Eg = − 0.492 (± 0.093) + 0.464 (± 0.044) · {sp3 (FTIR)/sp2}.

Solid state grain growth (SSCG) is a method of growing large single crystals from seed single crystals by abnormal grain growth in a small-grained matrix. During grain growth, pores are often trapped in the matrix and remain in single crystals. Aerosol deposition (AD) is a method of manufacturing films with almost full density from nano grains by causing high energy collision between substrates and ceramic powders. AD and SSCG are used to grow single crystals with few pores. BaTiO3 films are coated on (100) SrTiO3 seeds by AD. To generate grain growth, BaTiO3 films are heated to 1,300 oC and held for 10 h, and entire films are grown as single crystals. The condition of grain growth driving force is ΔGmax < ΔGc ≤ ΔGseed. On the other hand, the condition of grain growth driving force in BaTiO3 AD films heat-treated at 1,100 and 1,200 oC is ΔGc < ΔGmax, and single crystals are not grown.

This study discusses the representation of women and the use of discriminatory language expressions regarding them in movies. This study analyzed female characters and the language expressions used in relation to these female characters in the films between 2014 and 2019. Considering features of each character, the following types of discrimination were observed: “treating women as sexual objects” and “subordinating wife to husband” on the subject of right and violence, “treating women as men’s subordinates” for labor and in positions of leaderships, “excluding women” in terms of race and disabilities, “restricting women to gender-specific roles such as housewives” in motherhood and image of women, and “treating women’s behavior or personality differently’ in abilities and occupations. In the result of discriminatory language expressions, “degrading of women” was most frequently observed. And “treating women’s behavior or personality differently” was observed in few movies, exhibiting the lowest frequency. “Treating women as subordinates to men” and “excluding women” were expressions of discrimination in public spheres against social advancement, and “restricting women to gender-specific roles such as housewives” and “subordinating wife to husband” can be considered expressions of patriarchy.

Well-crystallized vanadium pentoxide V2O5 thin films are fabricated on MgO single crystal substrates by using pulsed-laser deposition technique. The linear optical transmission spectra are measured and found to be in a wavelength range from 300 to 800 nm; the data are used to determine the linear refractive index of the V2O5 films. The value of linear refractive index decreases with increasing wavelength, and the relationship can be well explained by Wemple’s theory. The third-order nonlinear optical properties of the films are determined by a single beam z-scan method at a wavelength of 532 nm. The results show that the prepared V2O5 films exhibit a fast third-order nonlinear optical response with nonlinear absorption coefficient and nonlinear refractive index of 2.13 × 10−10 m/W and 2.07 × 10−15 cm2/kW, respectively. The real and imaginary parts of the nonlinear susceptibility are determined to be 3.03 × 10−11 esu and 1.12 × 10−11 esu, respectively. The enhancement of the nonlinear optical properties is discussed.

We report the rapid single-step flame synthesis of hydrophobic carbon layers (C-layers) on the surface of stainless-steel (SS) substrates using vaporized biodiesel as the fuel. A co-flow canola methyl ester/air diffusion flame is used to generate a hydrophobic monolayer on the surface of the metal substrate upon its insertion into the reaction zone. Carbon deposition on the surface of the SS substrates varies by changing the SS disk’s position in the post-flame, and by varying its exposure time. The thickness and mass of the flame-formed monolayer varied depending on the substrate’s insertion point into the flame. However, the variation of mass did not significantly impact the C-layer’s uniformity or hydrophobicity. We hypothesize that a small “inner-cone” of the biodiesel flame along with a high soot propensity can result in an ideal medium to form uniform hydrophobic C-layers of unique hierarchical surface structure. This is supported by introducing SS substrates in methane/air flames formed using the same co-flow burner. The hydrophobic property of the carbon deposits was quantified by measuring the contact angle of water droplets placed on the film’s surface. A water droplet drop test was conducted on the flame-formed hydrophobic layers to study their wettability property.

Effects of growth variables and post-growth annealing on the optical, structural and electrical properties of magnetron-sputtered Ga0.04Mg0.10Zn0.86O films are characterized in detail. It is observed that films grown from pure oxygen plasma showed high resistivity, ~102 Ω·cm, whereas films grown in Ar plasma showed much lower resistivity, 2.0 × 10− 2 ~ 1.0 × 10−1 Ω·cm. Post-growth annealing significantly improved the electrical resistivity, to 4.3 ~ 9.0 × 10−3 Ω·cm for the vacuum annealed samples and to 1.3 ~ 3.0 × 10−3 Ω·cm for the films annealed in Zn vapor. It is proposed that these phenomena may be attributed to the improved crystalline quality and to changes in the defect chemistry. It is suggested that growth within oxygen environments leads to suppression of oxygen vacancy (Vo) donors and formation of Zn vacancy (VZn) acceptors, resulting in highly resistive films. After annealing treatment, the activation of Ga donors is enhanced, Vo donors are annihilated, and crystalline quality is improved, increasing the electron mobility and the concentration. After annealing in Zn vapor, Zn interstitial donors are introduced, further increasing the electron concentration.

This study produces electroconductive polycaprolactone (PCL)-based film with different amounts of graphene (G) through electrospinning, and the characteristics of the produced G/PCL composites are investigated. The G/PCL results are analyzed by comparing them with those obtained using pure PCL electrospun film as a control. The morphology of electrospun material is analyzed through scanning electron microscopy and transmission electron microscopy. Mechanical and electrical properties are also evaluated. Composites containing 1% graphene have the highest elongation rate, and 5% samples have the highest strength and elasticity. Graphene contents > 25% show electro-conductivity, which level improves with increase of graphene content. Biological characteristics of G/PCL composites are assessed through behavioral analysis of neural cell attachment and proliferation. Cell experiments reveal that compositions < 50% show slightly reduced cell viability. Moreover, graphene combinations facilitated cell proliferation compared to pure PCL. These results confirm that a 25 % G/PCL composition is best for application to systems that introduce external stimuli such as electric fields and electrodes to lead to synergistic efficiency of tissue regeneration.

Dry etching of copper thin films is performed using high density plasma of ethylenediamine (EDA)/ hexafluoroisopropanol (HFIP)/Ar gas mixture. The etch rates, etch selectivities and etch profiles of the copper thin films are improved by adding HFIP to EDA/Ar gas. As the EDA/HFIP concentration in EDA/HFIP/Ar increases, the etch rate of copper thin films decreases, whereas the etch profile is improved. In the EDA/HFIP/Ar gas mixture, the optimal ratio of EDA to HFIP is investigated. In addition, the etch parameters including ICP source power, dc-bias voltage, process pressure are varied to examine the etch characteristics. Optical emission spectroscopy results show that among all species, [CH], [CN] and [H] are the main species in the EDA/HFIP/Ar plasma. The X-ray photoelectron spectroscopy results indicate the formation of CuCN compound and C-N-H-containing polymers during the etching process, leading to a good etch profile. Finally, anisotropic etch profiles of the copper thin films patterned with 150 nm scale are obtained in EDA/HFIP/Ar gas mixture.

Zinc oxide (ZnO) based transparent conducting oxides (TCO) thin films, are used in many applications such as solar cells, flat panel displays, and LEDs due to their wide bandgap nature and excellent electrical properties. In the present work, fluorine and aluminium-doped ZnO targets are prepared and thin films are deposited on soda-lime glass substrate using a RF magnetron sputtering unit. The aluminium concentration is fixed at 2 wt%, and the fluorine concentration is adjusted between 0 to 2.0 wt% with five different concentrations, namely, Al2ZnO98(AZO), F0.5AZO97.5(FAZO1), F1AZO97(FAZO2), F1.5AZO96.5(FAZO3), and F2AZO96(FAZO4). Thin films are deposited with an RF power of 40 W and working pressure of 5 m Torr at 270 oC. The morphological analysis performed for the thin film reveals that surface roughness decreases in FAZO1 and FAZO2 samples when doped with a small amount of fluorine. Further, optical and electrical properties measured for FAZO1 sample show average optical transmissions of over 89 % in the visible region and 82.5 % in the infrared region, followed by low resistivity and sheet resistance of 3.59 × 10−4 Ωcm and 5.52 Ω/sq, respectively. In future, these thin films with excellent optoelectronic properties can be used for thin-film solar cell and other optoelectronics applications.

We report the structural characterization and electric heating performance of carbon thin films (CTFs), which were prepared from negative-type SU-8 photoresist by deep UV exposure and following carbonization. The prepared CTFs were found to have pseudo-graphitic carbon structures containing partially graphite domains in the amorphous carbon matrix. The CTFs showed a very smooth surface morphology with a roughness of 0.42 nm. The 107 nm-thick CTFs exhibited an excellent electric heating performance by attaining a high maximal temperature of 207 °C and a rapid heating rate of 13.2 °C/s at an applied voltage of 30 V. Therefore, the CTFs prepared in this study can be applied as electrode materials for high-performance electric heaters.

AZO thin films are grown on a p-Si(111) substrate by RF magnetron sputtering. The characteristics of various thicknesses and heat treatment conditions are investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Hall effect and room-temperature photoluminescence (PL) measurements. The substrate temperature and the RF power during growth are kept constant at 400 ℃ and 200 W, respectively. AZO films are grown with a preferred orientation along the c-axis. As the thickness and the heat treatment temperature increases, the length of the c-axis decreases as Al3+ ions of relatively small ion radius are substituted for Zn2+ ions. At room temperature, the PL spectrum is separated into an NBE emission peak around 3.2 eV and a violet regions peak around 2.95 eV with increasing thickness, and the PL emission peak of 300 nm is red-shifted with increasing annealing temperature. In the XPS measurement, the peak intensity of Al2p and Oll increases with increasing annealing temperature. The AZO thin film of 100 nm thickness shows values of 6.5 × 1019 cm−3 of carrier concentration, 8.4 cm−2/V·s of mobility and 1.2 × 10−2 Ω·cm electrical resistivity. As the thickness of the thin film increases, the carrier concentration and the mobility increase, resulting in the decrease of resistivity. With the carrier concentration, mobility decreases when the heat treatment temperature increases more than 500 ℃.

본고는 신시기 초 항미원조 영화를 통해 사회주의 혁명 시대의 ‘연장선’에서 포스트 사회주의로의 문화 전환 문제를 고찰하고 있다. 항미원조 서사는 신시기를 사회주의 혁명과의 ‘단절’로 보는 경향이 지배적이었던 ‘80년대 담론’을 보완하면서도, 마오쩌둥 시기 중국과 그 이후의 혁명적 자아 상상과 전환을 고찰할 수 있는 문화적 매개가 되기 때문이다. 이러한 문제의식을 바탕으로, 이 글에서는 1980년대 초 항미 원조 영화 중 가장 대중적이고 변화적 징후가 명확히 드러난 『마음 깊은 곳』을 중심으로 논의를 전개한다. 구체적으로는 영화 속 ‘생존자’의 이야기, ‘혁명’ 대가정에서 ‘혈연’ 소가정의 추구, ‘여성’ 인민지원군의 등장을 포스트 사회주의 문화징후로 추출하고, 이를 마오쩌둥 시기 항미원조 서사 특징과 비교 고찰함으로써 전후(前後) 서사 변화를 추동하는 배후의 문화 기제를 탐구한다. 이러한 작업을 통해, 사회주의 혁명 시기와의 ‘단절’이 아닌 ‘연속’의 관점에서 새로운 시대로 안정적 전환을 꾀했던 신시기 항미원조 서사의 문화 기획과 그 한계에 대해 논의하였다.

전 세계인류는 코로나 바이러스와 사투를 벌이고 있다. 그것이 자연의 반작용인지, 조물주의 분노인지 알 수는 없다. 단지 인간은 그것에 대응하기 위하여 노력할 뿐 그것의 정체와 끝을 알아낼 수가 없다. 여태 인간이 알 수 있는 것은 근본적인 것이 아니라 증상적이고 현상적인 것이다. 인간은 르네상스 이후 계몽주의 기획의 일환으로 자연의 법칙을 하나씩 알아내어 불로장생의 수단으로 삼아가고 있는 중 이다. 르네상스의 시대정신인 휴머니즘은 600년이 지난 지금 포스트-휴머니즘으로 변경되었다. 그것은 인간과 기계가 결합된 세상을 의미한다. 인간의 아침은 각자 디지털 디바이스의 접속, 즉 컴퓨터와 스마트폰을 열고 하루의 일과를 구상한다. 그래서 포스트-휴머니즘은 인간존재의 조건이 된다. 이러한 점에서 포스트-휴머니즘을 전조한 영화들『불로(不老)의 묘약』, 『터미네이터』, 『매트릭스』를 예이츠의 시작품에 적용해 본 결과, 인간들은 스스로의 편의와 안락을 추구하기 위해 신성의 일환으로서의 사고의 결과로 스스로 창조한 기계에 의해 사멸할 운명에 처한다. 그리고 영화와 시는 현실의 상황을 영상과 문자로 현실을 반영하는 징후적 텍스트에 불과하다.

Silicon nitride thin films are deposited by RF (13.57 MHz) magnetron sputtering process using a Si (99.999 %) target and with different ratios of Ar/N2 sputtering gas mixture. Corning G type glass is used as substrate. The vacuum atmosphere, RF source power, deposit time and temperature of substrate of the sputtering process are maintained consistently at 2 ~ 3 × 10−3 torr, 30 sccm, 100 watt, 20 min. and room temperature, respectively. Cross sectional views and surface morphology of the deposited thin films are observed by field emission scanning electron microscope, atomic force microscope and X-ray photoelectron spectroscopy. The hardness values are determined by nano-indentation measurement. The thickness of the deposited films is approximately within the range of 88 nm ~ 200 nm. As the amount of N2 gas in the Ar:N2 gas mixture increases, the thickness of the films decreases. AFM observation reveals that film deposited at high Ar:N2 gas ratio and large amount of N2 gas has a very irregular surface morphology, even though it has a low RMS value. The hardness value of the deposited films made with ratio of Ar:N2=9:1 display the highest value. The XPS spectrum indicates that the deposited film is assigned to non-stoichiometric silicon nitride and the transmittance of the glass with deposited SiO2-SixNy thin film is satisfactory at 97 %.