Effects of growth variables and post-growth annealing on the optical, structural and electrical properties of magnetron-sputtered Ga0.04Mg0.10Zn0.86O films are characterized in detail. It is observed that films grown from pure oxygen plasma showed high resistivity, ~102 Ω·cm, whereas films grown in Ar plasma showed much lower resistivity, 2.0 × 10− 2 ~ 1.0 × 10−1 Ω·cm. Post-growth annealing significantly improved the electrical resistivity, to 4.3 ~ 9.0 × 10−3 Ω·cm for the vacuum annealed samples and to 1.3 ~ 3.0 × 10−3 Ω·cm for the films annealed in Zn vapor. It is proposed that these phenomena may be attributed to the improved crystalline quality and to changes in the defect chemistry. It is suggested that growth within oxygen environments leads to suppression of oxygen vacancy (Vo) donors and formation of Zn vacancy (VZn) acceptors, resulting in highly resistive films. After annealing treatment, the activation of Ga donors is enhanced, Vo donors are annihilated, and crystalline quality is improved, increasing the electron mobility and the concentration. After annealing in Zn vapor, Zn interstitial donors are introduced, further increasing the electron concentration.

This study produces electroconductive polycaprolactone (PCL)-based film with different amounts of graphene (G) through electrospinning, and the characteristics of the produced G/PCL composites are investigated. The G/PCL results are analyzed by comparing them with those obtained using pure PCL electrospun film as a control. The morphology of electrospun material is analyzed through scanning electron microscopy and transmission electron microscopy. Mechanical and electrical properties are also evaluated. Composites containing 1% graphene have the highest elongation rate, and 5% samples have the highest strength and elasticity. Graphene contents > 25% show electro-conductivity, which level improves with increase of graphene content. Biological characteristics of G/PCL composites are assessed through behavioral analysis of neural cell attachment and proliferation. Cell experiments reveal that compositions < 50% show slightly reduced cell viability. Moreover, graphene combinations facilitated cell proliferation compared to pure PCL. These results confirm that a 25 % G/PCL composition is best for application to systems that introduce external stimuli such as electric fields and electrodes to lead to synergistic efficiency of tissue regeneration.

Dry etching of copper thin films is performed using high density plasma of ethylenediamine (EDA)/ hexafluoroisopropanol (HFIP)/Ar gas mixture. The etch rates, etch selectivities and etch profiles of the copper thin films are improved by adding HFIP to EDA/Ar gas. As the EDA/HFIP concentration in EDA/HFIP/Ar increases, the etch rate of copper thin films decreases, whereas the etch profile is improved. In the EDA/HFIP/Ar gas mixture, the optimal ratio of EDA to HFIP is investigated. In addition, the etch parameters including ICP source power, dc-bias voltage, process pressure are varied to examine the etch characteristics. Optical emission spectroscopy results show that among all species, [CH], [CN] and [H] are the main species in the EDA/HFIP/Ar plasma. The X-ray photoelectron spectroscopy results indicate the formation of CuCN compound and C-N-H-containing polymers during the etching process, leading to a good etch profile. Finally, anisotropic etch profiles of the copper thin films patterned with 150 nm scale are obtained in EDA/HFIP/Ar gas mixture.

Zinc oxide (ZnO) based transparent conducting oxides (TCO) thin films, are used in many applications such as solar cells, flat panel displays, and LEDs due to their wide bandgap nature and excellent electrical properties. In the present work, fluorine and aluminium-doped ZnO targets are prepared and thin films are deposited on soda-lime glass substrate using a RF magnetron sputtering unit. The aluminium concentration is fixed at 2 wt%, and the fluorine concentration is adjusted between 0 to 2.0 wt% with five different concentrations, namely, Al2ZnO98(AZO), F0.5AZO97.5(FAZO1), F1AZO97(FAZO2), F1.5AZO96.5(FAZO3), and F2AZO96(FAZO4). Thin films are deposited with an RF power of 40 W and working pressure of 5 m Torr at 270 oC. The morphological analysis performed for the thin film reveals that surface roughness decreases in FAZO1 and FAZO2 samples when doped with a small amount of fluorine. Further, optical and electrical properties measured for FAZO1 sample show average optical transmissions of over 89 % in the visible region and 82.5 % in the infrared region, followed by low resistivity and sheet resistance of 3.59 × 10−4 Ωcm and 5.52 Ω/sq, respectively. In future, these thin films with excellent optoelectronic properties can be used for thin-film solar cell and other optoelectronics applications.

We report the structural characterization and electric heating performance of carbon thin films (CTFs), which were prepared from negative-type SU-8 photoresist by deep UV exposure and following carbonization. The prepared CTFs were found to have pseudo-graphitic carbon structures containing partially graphite domains in the amorphous carbon matrix. The CTFs showed a very smooth surface morphology with a roughness of 0.42 nm. The 107 nm-thick CTFs exhibited an excellent electric heating performance by attaining a high maximal temperature of 207 °C and a rapid heating rate of 13.2 °C/s at an applied voltage of 30 V. Therefore, the CTFs prepared in this study can be applied as electrode materials for high-performance electric heaters.

AZO thin films are grown on a p-Si(111) substrate by RF magnetron sputtering. The characteristics of various thicknesses and heat treatment conditions are investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Hall effect and room-temperature photoluminescence (PL) measurements. The substrate temperature and the RF power during growth are kept constant at 400 ℃ and 200 W, respectively. AZO films are grown with a preferred orientation along the c-axis. As the thickness and the heat treatment temperature increases, the length of the c-axis decreases as Al3+ ions of relatively small ion radius are substituted for Zn2+ ions. At room temperature, the PL spectrum is separated into an NBE emission peak around 3.2 eV and a violet regions peak around 2.95 eV with increasing thickness, and the PL emission peak of 300 nm is red-shifted with increasing annealing temperature. In the XPS measurement, the peak intensity of Al2p and Oll increases with increasing annealing temperature. The AZO thin film of 100 nm thickness shows values of 6.5 × 1019 cm−3 of carrier concentration, 8.4 cm−2/V·s of mobility and 1.2 × 10−2 Ω·cm electrical resistivity. As the thickness of the thin film increases, the carrier concentration and the mobility increase, resulting in the decrease of resistivity. With the carrier concentration, mobility decreases when the heat treatment temperature increases more than 500 ℃.

본고는 신시기 초 항미원조 영화를 통해 사회주의 혁명 시대의 ‘연장선’에서 포스트 사회주의로의 문화 전환 문제를 고찰하고 있다. 항미원조 서사는 신시기를 사회주의 혁명과의 ‘단절’로 보는 경향이 지배적이었던 ‘80년대 담론’을 보완하면서도, 마오쩌둥 시기 중국과 그 이후의 혁명적 자아 상상과 전환을 고찰할 수 있는 문화적 매개가 되기 때문이다. 이러한 문제의식을 바탕으로, 이 글에서는 1980년대 초 항미 원조 영화 중 가장 대중적이고 변화적 징후가 명확히 드러난 『마음 깊은 곳』을 중심으로 논의를 전개한다. 구체적으로는 영화 속 ‘생존자’의 이야기, ‘혁명’ 대가정에서 ‘혈연’ 소가정의 추구, ‘여성’ 인민지원군의 등장을 포스트 사회주의 문화징후로 추출하고, 이를 마오쩌둥 시기 항미원조 서사 특징과 비교 고찰함으로써 전후(前後) 서사 변화를 추동하는 배후의 문화 기제를 탐구한다. 이러한 작업을 통해, 사회주의 혁명 시기와의 ‘단절’이 아닌 ‘연속’의 관점에서 새로운 시대로 안정적 전환을 꾀했던 신시기 항미원조 서사의 문화 기획과 그 한계에 대해 논의하였다.

전 세계인류는 코로나 바이러스와 사투를 벌이고 있다. 그것이 자연의 반작용인지, 조물주의 분노인지 알 수는 없다. 단지 인간은 그것에 대응하기 위하여 노력할 뿐 그것의 정체와 끝을 알아낼 수가 없다. 여태 인간이 알 수 있는 것은 근본적인 것이 아니라 증상적이고 현상적인 것이다. 인간은 르네상스 이후 계몽주의 기획의 일환으로 자연의 법칙을 하나씩 알아내어 불로장생의 수단으로 삼아가고 있는 중 이다. 르네상스의 시대정신인 휴머니즘은 600년이 지난 지금 포스트-휴머니즘으로 변경되었다. 그것은 인간과 기계가 결합된 세상을 의미한다. 인간의 아침은 각자 디지털 디바이스의 접속, 즉 컴퓨터와 스마트폰을 열고 하루의 일과를 구상한다. 그래서 포스트-휴머니즘은 인간존재의 조건이 된다. 이러한 점에서 포스트-휴머니즘을 전조한 영화들『불로(不老)의 묘약』, 『터미네이터』, 『매트릭스』를 예이츠의 시작품에 적용해 본 결과, 인간들은 스스로의 편의와 안락을 추구하기 위해 신성의 일환으로서의 사고의 결과로 스스로 창조한 기계에 의해 사멸할 운명에 처한다. 그리고 영화와 시는 현실의 상황을 영상과 문자로 현실을 반영하는 징후적 텍스트에 불과하다.

Silicon nitride thin films are deposited by RF (13.57 MHz) magnetron sputtering process using a Si (99.999 %) target and with different ratios of Ar/N2 sputtering gas mixture. Corning G type glass is used as substrate. The vacuum atmosphere, RF source power, deposit time and temperature of substrate of the sputtering process are maintained consistently at 2 ~ 3 × 10−3 torr, 30 sccm, 100 watt, 20 min. and room temperature, respectively. Cross sectional views and surface morphology of the deposited thin films are observed by field emission scanning electron microscope, atomic force microscope and X-ray photoelectron spectroscopy. The hardness values are determined by nano-indentation measurement. The thickness of the deposited films is approximately within the range of 88 nm ~ 200 nm. As the amount of N2 gas in the Ar:N2 gas mixture increases, the thickness of the films decreases. AFM observation reveals that film deposited at high Ar:N2 gas ratio and large amount of N2 gas has a very irregular surface morphology, even though it has a low RMS value. The hardness value of the deposited films made with ratio of Ar:N2=9:1 display the highest value. The XPS spectrum indicates that the deposited film is assigned to non-stoichiometric silicon nitride and the transmittance of the glass with deposited SiO2-SixNy thin film is satisfactory at 97 %.

In the new media environment, the two different media types, game and film, fused to each other to create a qualitative change to form a new media type. In recent years, there has been an increasing trend in the background of the convergence of virtual technology and media. Therefore, movies based on the game were produced. In this heat, it is necessary to analyze the gains and losses of the reorganization in a cool way, to review the current state of filming of the game, and to examine the new convergence of games and films in the rapid environment of new media technology. In addition, it is necessary to consider the problems presented in the fusion process of the two mediators and how to develop them in the future.

정공 수송 층 (HTL)은 PSC의 효율 및 안정성을 증가시키기 위해 페로브스카이트 태양 전지 (PSC)에서 중요한 역할을 한다. 본 연구에서, 우리는 PSCs에서 HTL 스핀 코팅 및 블레이드 코팅 방법으로 니켈 산화물 구리 산화물 (NiO-CuO) 나노 입자 (NPs) 박막을 준비하였다. 스핀 코팅 및 블레이드 코팅 된 NiO-CuO 필름의 필름 특성은 원자력 현미경 (AFM)을 사용하여 조사하었고, 장치 성능에 대한 효과는 J-V 특성, 양자 효율 및 광 강도의 Voc 의존성을 사용하여 조사하었다. 결과적으로, 스핀 코팅으로 15.28 % 효율, 블레이드 코팅으로 11.18 % 효율을 달성하였다.

Recent discoveries of ferroelectric properties in ultrathin doped hafnium oxide (HfO2) have led to the expectation that HfO2 could overcome the shortcomings of perovskite materials and be applied to electron devices such as Fe-Random access memory (RAM), ferroelectric tunnel junction (FTJ) and negative capacitance field effect transistor (NC-FET) device. As research on hafnium oxide ferroelectrics accelerates, several models to analyze the polarization switching characteristics of hafnium oxide ferroelectrics have been proposed from the domain or energy point of view. However, there is still a lack of in-depth consideration of models that can fully express the polarization switching properties of ferroelectrics. In this paper, a Zr-doped HfO2 thin film based metal-ferroelectric-metal (MFM) capacitor was implemented and the polarization switching dynamics, along with the ferroelectric characteristics, of the device were analyzed. In addition, a study was conducted to propose an applicable model of HfO2-based MFM capacitors by applying various ferroelectric switching characteristics models.

Doping or incorporation with exotic elements are two manners to regulate the optoelectronic properties of transparent conducting (TCO) cadmium oxide (CdO). Nevertheless, the method of doping host CdO by CdTe semiconductor is of high importance. The structural, optical, and electrical properties of CdTe-doped CdO films are studied for the sake of promoting their conducting parameters (CPs), including their conductivity, carrier concentration, and carrier mobility, along with transparency in the NIR spectral region; these are then compared with the influence of doping the host CdO by pure Te ions. X-ray fluorescence (XRF), X-ray diffraction (XRD), optical absorption spectroscopy, and electrical measurements are used to characterise the deposited films prepared by thermal evaporation. Numerous results are presented and discussed in this work; among these results, the optical properties are studied through a merging of concurrent BGN (redshift) and BGW (blue shift) effects as a consequence of doping processes. The impact of hydrogenation on the characterisations of the prepared films is investigated; it has no qualitative effect on the crystalline structure. However, it is found that TCO-CPs are improved by the process of CdTe doping followed by hydrogenation. The utmost TCO-CP improvements are found with host CdO film including ~ 1 %Te, in which the resistivity decreases by ~ 750 %, carrier concentration increases by 355 %, and mobility increases by ~ 90% due to the increase of Ncarr. The improvement of TCO-CPs by hydrogenation is attributed to the creation of O-vacancies because of H2 molecule dissociation in the presence of Te ions. These results reflect the potential of using semiconductor CdTe -doped CdO thin films in TCO applications. Nevertheless, improvements of the host CdO CPs with CdTe dopant are of a lesser degree compared with the case of doping the host CdO with pure Te ions.

The gas response characteristic toward C2H5OH has been demonstrated in terms of copper-vacancy concentration, hole density, and microstructural factors for undoped/Li(I)-doped CuO thin films prepared by sol-gel method. For the films, both concentrations of intrinsic copper vacancies and electronic holes decrease with increasing calcination temperature from 400 to 500 to 600 oC. Li(I) doping into CuO leads to the reduction of copper-vacancy concentration and the enhancement of hole density. The increase of calcination temperature or Li(I) doping concentration in the film increases both optical band gap energy and Cu2p binding energy, which are characterized by UV-vis-NIR and X-ray photoelectron spectroscopy, respectively. The overall hole density of the film is determined by the offset effect of intrinsic and extrinsic hole densities, which depend on the calcination temperature and the Li(I) doping amount, respectively. The apparent resistance of the film is determined by the concentration of the structural defects such as copper vacancies, Li(I) dopants, and grain boundaries, as well as by the hole density. As a result, it is found that the gas response value of the film sensor is directly proportional to the apparent sensor resistance.

이 글은 조선 후기 성리학적 유교 전통의 귀신관과 괴기담 소설과의 연관성을 통해, 한국 괴물 서사의 형성 기반에 대해 알아보았다. 이를 바탕으로 한국 영화 속 괴물 서사와 전통적 귀신관과의 영향 관계 분석을 통해, 2000년 이후 괴물 서사의 변모 양상을 살펴 보고 있다. 조선 후기 성리학자들의 귀신관은 귀신을 ‘초월적이고 신이한 존재’로 파악하기보다는, 조상신에 대한 제사 의례의 하나로 ‘귀’와의 교감 행위를 통해 현실에서의 도덕의식을 강화하려 했다. 현실에서의 도덕 윤리를 강조했던 성리학적 귀신관은 이후 귀신 설화나 괴기담 소설에 지대한 영향을 끼친다. 조선 후기 대표적 괴기담 소설이라 할 수 있는 <장화홍련전>과 아랑형 전설은 ‘여귀의 복수담과 해원’을 주된 서사 구조로 한다. 그들은 가부장제의 과잉 억압에 의해 원귀가 되었지만, 해원 과정에서 현세의 유교적인 봉건 질서를 추수하는 특징을 보인다. 이는 당시 귀신관에 내재된 성리학적 유교 윤리가 적용된 결과다. 1960년대 이후 본격적으로 제작되기 시작한 한국 공포영화 속 괴물 서사는 조선 후기 <장화홍련전>이나 아랑형 전설과 같은 원귀 설화의 전통과 그 맥락을 같이한다. 그러나 유교적 가부장제에 기반한 여귀의 복수담과 해원이라는 한국 괴물 서사 구조는 사회가 급변함에 따라 변화하기 시작한다. 과거 영화 속 괴물이 가부장제의 억압에 의해 귀환한 타자였다면, IMF 이후 괴물 서사는 오히려 가부장제의 질서를 위반하거나, 교란 혹은 와해시키는 존재로 출몰한다. 2000년 이후 괴물 서사의 이러한 변화는 오랜 기간 전통적 가치관으로 자리 잡아온 가부장제의 질서가 흔들리고 있음을 보여주는 것이며, 영화 속 괴물 서사가 당대의 사회문화적 맥락과 함께 변화하고 있음을 반증하는 것이다.

In this work, we study physical and mechanical properties of oxide films formed on AZ91D magnesium alloy by plasma anodization at different temperatures. It is found that the higher the electrolyte temperature, the lower is the breakdown voltage of oxide layer. This is probably because films formed at higher temperatures are thinner and denser. Moreover, electrolyte temperature plays an important role in the physical properties of the films. As the electrolyte temperature increases from 20 to 50℃, the hardness of the oxide layer increases. Friction test against steel balls indicates that wear scars become narrower for films formed at higher temperatures because the films are harder, as indicated by the Vickers hardness. The thinner and denser nature of the oxide film formed at 50°C is also advantageous for heat transfer when film is used as a heat sink. Laser flash test results show very fast heat transfer for AZ91D with plasma anodized oxide layer formed at higher temperatures.

In order to observe the microstructure and morphology of porous titanium -oxide thin film, deposition is performed under a higher Ar gas pressure than is used in the general titanium thin film production method. Black titanium thin film is deposited on stainless steel wire and Cu thin plate at a pressure of about 12 Pa, but lustrous thin film is deposited at lower pressure. The black titanium thin film has a larger apparent thickness than that of the glossy thin film. As a result of scanning electron microscope observation, it is seen that the black thin film has an extremely porous structure and consists of a separated column with periodic step differences on the sides. In this configuration, due to the shadowing effect, the nuclei formed on the substrate periodically grow to form a step. The surface area of the black thin film on the Cu thin plate changes with the bias potential. It has been found that the bias of the small negative is effective in increasing the surface area of the black titanium thin film. These results suggest that porous titanium-oxide thin film can be fabricated by applying the appropriate oxidation process to black titanium thin film composed of separated columns.

In this study, we investigate the effect of Al/N source ratios and growth rates on the growth and structural properties of AlN films on c-plane sapphires by plasma-assisted molecular beam epitaxy. Both growth rates and Al/N ratios affect crystal qualities of AlN films. The full width at half maximum (FWHM) values of (1015) X-ray rocking curves (XRCs) change from 0.22 to 0.31° with changing of the Al/N ratios, but the curves of (0002) XRCs change from 0.04 to 0.45° with changing of the Al/N ratios. This means that structural deformation due to dislocations is slightly affected by the Al/N ratio in the (1015) XRCs but affected strongly for the (0002) XRCs. From the viewpoint of growth rate, the AlN films with high growth rate (HGR) show better crystal quality than the low growth rate (LGR) films overall, as shown by the FWHM values of the (0002) and (1015) XRCs. Based on cross-sectional transmission electron microscope observation, the HGR sample with an Al/N ratio of 3.1 shows more edge dislocations than there are screw and mixed dislocations in the LGR sample with Al/N ratio of 3.5.