The cobalt silicides were investigated for employment as a catalytic layer for a DSSC. Using an E-gun evaporation process, we prepared a sample of 100 nm-thick cobalt on a p-type Si (100) wafer. To form cobalt silicides, the samples were annealed at temperatures of 300 oC, 500 oC, and 700 oC for 30 minutes in a vacuum. Four-point probe, XRD, FE-SEM, and CV analyses were used to determine the sheet resistance, phase, microstructure, and catalytic activity of the cobalt silicides. To confirm the corrosion stability, we also checked the microstructure change of the cobalt silicides after dipping into iodide electrolyte. Through the sheet resistance and XRD results, we determined that Co2Si, CoSi, and CoSi2 were formed successfully by annealing at 300 oC, 500 oC, and 700 oC, respectively. The microstructure analysis results showed that all the cobalt silicides were formed uniformly, and CoSi and CoSi2 layers were very stable even after dipping in the iodide electrolyte. The CV result showed that CoSi and CoSi2 exhibit catalytic activities 67 % and 54 % that of Pt. Our results for Co2Si, CoSi, and CoSi2 revealed that CoSi and CoSi2 could be employed as catalyst for a DSSC.

입자 크기가 약 16 및 5 nm인 두 다른 크기의 TiO2 나노입자들과 titanium tetraisopropoxide (TTIP) binder 와 ethanol 용매만으로 제조된 코팅액을 사용하여 130 oC 저온 열처리로 ITO/PEN substrate 위에 메조다공성 TiO2 박막들을 형성하였다. 이들 TiO2/ITO/PEN 박막들을 활용한 유연 염료감응 태양전지들을 제작하여 광변환 특성을 비교 연구하였다. 크기가 다른 두 TiO2 나노입자들을 각각 단독으로 사용하여 제작된 cell들의 경우에 크기가 16 nm 인 TiO2 나노입자 cell이 5 nm인 나노입자 cell에 비해 박막의 porosity가 훨씬 크고 같은 질량에서 표면적이 훨씬 넓어 광변환 효율이 훨씬 높으나 염료 흡착량에 대해 상대적으로 작은 광전류는 입자간의 연결성에 기인되며 큰 입 자에 작은 입자를 10% 정도 혼합한 경우에 표면적 증가와 함께 입자간의 연결성을 강화시켜 큰 입자 단독으로 제작 된 cell에 비해 광변환 효율이 크게 증가됨을 확인하였다.

This study describes the effects of treated water (TW) on PH changing, growth of watermelon seedlings, canola oil and diesel absorption, the antibacterial ability of the filter that composited from polyurethane(PU) and silver powder(Ag) producing by Electrospinning. In this study, we used the battery energy acquired from solar cell, the water has been processed when it pass through the electromagnetic field. The results of this research indicated that the PH value of TW changed slightly compared with untreated water (UW), but the TW could absorb smell of PH reagent. In addition, the TW could also promote the growth of watermelon seedling, and the growth of watermelon seedling stem length was about twice compared with UW. On the effects of canola oil and diesel absorption, the TW also showed a good oil absorptive capacity, especially for the diesel absorption, it could absorb 28% diesel. For the PU+PU+Ag/CNT filter, it showed about 100% of the antibacterial rate on strain 1 (Staphylococcus aureus ATCC 6538P) and 2 (Escherichia coli ATCC 8739).

In this study, analysed the characteristics of power drop and surface damage in solar cell through high temperature and humidity test in the 3 case of EVA(ethylene vinyl acetate) and 2 case ribbon thickness. The solar cells were tested during the 500hr in 85℃ temperature and 85% relative humidity conditions, that excerpted standard of PV Module(KS C IEC-61215). Through the EL(Electroluminescence) shots, specimen's surface have partialy damaged. Before and after high humidity and high temperature test, ribbon thickness 200㎛ EVA1 case power drop rate was 8.463%, EVA2 case was 6.667%, EVA3 case was 6.373%. In the ribbon thickness 250㎛ EVA1 case power drop rate was 6.521%, EVA2 case was 8.517%, EVA3 case was 6.019%. EVA3 case was the lowest power and FF(fill factor) drop rate at the 2 case of ribbon thickness, because EVA3 is laerger than EVA1 and EVA2 in thickness, elongation and tensile strength.

The organic binder-free paste for dye-sensitized solar cell (DSSC) has been investigated using peroxo titanium complex. The crystal structure of TiO2 nanoparticles, morphology of TiO2 film and electrical properties are analyzed by X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Electrochemical Impedance Spectra (EIS), and solar simulator. The synthesized TiO2 nanopowders by the peroxo titanium complex at 150, 300, 400˚C, and 450˚C have anatase phase and average crystal sizes are calculated to be 4.2, 13.7, 16.9, and 20.9 nm, respectively. The DSSC prepared by the peroxo titanium complex binder have higher Voc and lower Jsc values than that of the organic binder. It can be attributed to improvement of sintering properties of TCO/TiO2 and TiO2/TiO2 interface and to formation of agglomerate by the nanoparticles. As a result, we have investigated the organic binder-free paste and 3.178% conversion efficiency of the DSSC at 450˚C.

In photovoltaic power generation where minority carrier generation via light absorption is competing against minority carrier recombination, the substrate thickness and material quality are interdependent, and appropriate combination of the two variables is important in obtaining the maximum output power generation. Medici, a two-dimensional semiconductor device simulation tool, is used to investigate the interdependency in relation to the maximum power output in front-lit Si solar cells. Qualitatively, the results indicate that a high quality substrate must be thick and that a low quality substrate must be thin in order to achieve the maximum power generation in the respective materials. The dividing point is 70 μm/5 × 10−6 sec. That is, for materials with a minority carrier recombination lifetime longer than 5 × 10−6 sec, the substrate must be thicker than 70 μm, while for materials with a lifetime shorter than 5 × 10−6 sec, the substrate must be thinner than 70 μm. In substrate fabrication, the thinner the wafer, the lower the cost of material, but the higher the cost of wafer fabrication. Thus, the optimum thickness/lifetime combinations are defined in this study along with the substrate cost considerations as part of the factors to be considered in material selection.

This study provides a comparison and analysis of the predicted damages related to hazardous chemical substances used in “A” solar cell manufacturing process. In order to predict potential damages, different accident scenarios were established using the ALOHA model and the KOSHA guideline. This study evaluates chemical spills and leaks from cylinder and pipeline. Maximum distance of chemical movement, based on an initial concentration of 150 ppm, was estimated as up to 258 m in summer and 251 m in winter. The impacts of the leakage of chemicals such as ammonia, were dependent on the initial concentration of the chemical leaked, the atmospheric stability and temperature, and the wind speed. All of those however, were affected by air humidity.

Silicon oxynitride that can be deposited two times faster than general SiNx:H layer was applied to fabricate the passivation protection layer of atomic layer deposition (ALD) Al2O3. The protection layer is deposited by plasma-enhanced chemical vapor deposition to protect Al2O3 passivation layer from a high temperature metallization process for contact firing in screen-printed silicon solar cell. In this study, we studied passivation performance of ALD Al2O3 film as functions of process temperature and RF plasma effect in plasma-enhanced chemical vapor deposition system. Al2O3/SiON stacks coated at 400 oC showed higher lifetime values in the as-stacked state. In contrast, a high quality Al2O3/SiON stack was obtained with a plasma power of 400 W and a capping-deposition temperature of 200 oC after the firing process. The best lifetime was achieved with stack films fired at 850 oC. These results demonstrated the potential of the Al2O3/SiON passivated layer for crystalline silicon solar cells.

In this study, in order to improve the efficiency of n-type monocrystalline solar cells with an Alu cell structure, we investigate the effect of the amount of Al paste in thin n-type monocrystalline wafers with thicknesses of 120 μm, 130 μm, 140 μm. Formation of the Al doped p+ layer and wafer bowing occurred from the formation process of the Al back electrode was analyzed. Changing the amount of Al paste increased the thickness of the Al doped p+ layer, and sheet resistivity decreased; however, wafer bowing increased due to the thermal expansion coefficient between the Al paste and the c-Si wafer. With the application of 5.34 mg/cm2 of Al paste, wafer bowing in a thickness of 140 μm reached a maximum of 2.9 mm and wafer bowing in a thickness of 120 μm reached a maximum of 4 mm. The study’s results suggest that when considering uniformity and thickness of an Al doped p+ layer, sheet resistivity, and wafer bowing, the appropriate amount of Al paste for formation of the Al back electrode is 4.72 mg/cm2 in a wafer with a thickness of 120 μm.

Light scattering enhancement is widely used to enhance the optical absorption efficiency of dye-sensitized solar cells. In this work, we systematically analyzed the effects of spherical voids distributed as light-scattering centers in photoanode films made of an assembly of zinc oxide nanoparticles. Spherical voids in electrode films were formed using a sacrificial template of polystyrene (PS) spheres. The diameter and volume concentration of these spheres was varied to optimize the efficiency of dye-sensitized solar cells. The effects of film thickness on this efficiency was also examined. Electrochemical impedance spectroscopy was performed to study electron transport in the electrodes. The highest power conversion efficiency of 4.07 % was observed with 12μm film thickness. This relatively low optimum thickness of the electrode film is due to the enhanced light absorption caused by the light scattering centers of voids distributed in the film.

본 연구는 염료감응형 태양전지를 이용하여 시간에 따른 일사량과 그에 따른 전력량의 분석을 통해 계절적 변화에 따른 온실 적용 염료감응형 태양전지의 효율에 관한 기초 자료 수집 및 분석을 목표로 하였다. 경상대 학교 소재 온실 근처(위도 35o 9' 9.20" N, 경도 128o 5' 44.90" E, 고도 52m)에 태양전지 어레이를 설치, 2012 년 8월, 10월, 11월, 2013년 2월 약 네 달 동안 태양전 지가 받는 일사량과 그에 따른 전력량을 측정 및 비교, 분석하였다. 10월의 태양전지 패널 면적에 따른 일사량이 약 1,013.03MJ, 발생된 전력량은 약 4.87kWh로 네 달 중 가장 높게 측정되었고, 11월의 패널 면적에 따른 일사량이 약 755.25MJ, 발생 전력량은 약 3.34kWh로 가장 낮게 측정되었다. 염료감응형 태양전지의 평균 효율의 경 우 8월 한 달간, 약 3.12%로 측정되었고, 10월 2.60%, 11월 2.39%, 2월 2.23%로 각각 측정되었다. 본 연구를 통해, 향후 염료감응형 태양전지의 온실 등 농업분야 적 용 시 기초자료로 활용 할 수 있을 것으로 기대된다.

Mo-based thin films are frequently used as back electrode materials because of their low resistivity and high crystallinity in CIGS chalcopyrite solar cells. Mo:Na/Mo bilayer thin films with 1μm thickness were deposited on soda lime glass by varying the thickness of each layer using dc-magnetron sputtering. The effects of the Mo:Na layer on morphology and electrical property in terms of resistivity were systematically investigated. The resistivity increased from 159μΩcm to 944μΩcm; this seemed to be caused by increased surface defects and low crystallinity as the thickness of Mo:Na layer increased from 100 nm to 500 nm. The surface morphologies of the Mo thin films changed from a somewhat coarse fibrous structures to irregular and fine celled structures with increased surface cracks along the cell boundaries as the thickness of Mo:Na layer increased. Na contents varied drastically from 0.03 % to 0.52 % according to the variation of Mo:Na layer thickness. The change in Na content may be ascribed to changes in surface morphology and crystallinity of the thin films.

The effect of a sputter deposition sequence of Cu, Zn, and Sn metal layers on the properties of Cu2ZnSnS4 (CZTS) was systematically studied for solar cell applications. The set of Cu/Sn/Zn/Cu multi metal films was deposited on a Mo/SiO2/Si wafer using dc sputtering. CZTS films were prepared through a sulfurization process of the Cu/Sn/Zn/Cu metal layers at 500˚C in a H2S gas environment. H2S (0.1%) gas of 200 standard cubic centimeters per minute was supplied in the cold-wall sulfurization reactor. The metal film prepared by one-cycle deposition of Cu(360 nm)/Sn(400 nm)/Zn(400 nm)/Cu(440 nm) had a relatively rough surface due to a well-developed columnar structure growth. A dense and smooth metal surface was achieved for two- or three-cycle deposition of Cu/Sn/Zn/Cu, in which each metal layer thickness was decreased to 200 nm. Moreover, the three-cycle deposition sample showed the best CZTS kesterite structures after 5 hr sulfurization treatment. The two- and three-cycle Cu/Sn/Zn/Cu samples showed high-efficient photoluminescence (PL) spectra after a 3 hr sulfurization treatment, wheres the one-cycle sample yielded poor PL efficiency. The PL spectra of the three-cycle sample showed a broad peak in the range of 700-1000 nm, peaked at 870 nm (1.425 eV). This result is in good agreement with the reported bandgap energy of CZTS.

In recent years, anti-PID (Potential Induced Degradation) technologies have been studied and developed at various stages through- out the solar value chain from solar cells to systems in an effort to enhance long-term reliability of the photovoltaics (PV) system. Such technologies and applications must bring in profits economically for both manufacturers of solar cell/module and investors of PV systems, simultaneously for the development of the PV industry. In this study two selected anti-PID technologies, ES (modification of emitter structure) and ARC (modification of anti-reflective coating) were compared based on the economic features of both a cell maker with 60MW production capacity and an investor of 1MW PV power plant. As a result of this study, it is shown that ARC anti-PID technology can ensure more profits over ES technology for both the cell manufacturer and the investor of PV power plant.

In recent years, there has been developed anti-PID technologies(Potential Induced Degradation) in various levels from solar cell to module and to system to enhance of the long life reliability of photovoltaics(PV) system. Such technologies must economically ensure profits for both manufacturers of solar cells and investors of PV system simultaneously for PV industry development. This paper describes a comparison between and selection from two anti-PID technologies in the solar cell level, ES(modification of emitter structure) and ARC(modification of anti-reflective coating) based on the economic features of anti-PID solar cell production system with 60MW capacity for a solar cell maker and a 1MW PV power plant installed with PV modules using anti-PID solar cells. From the comparison between ES and ARC, it is shown that ARC anti-PID technology can make more profit for both a solar cell maker and a PV power plant investor.

In this study, the influence on the surface passivation properties of crystalline silicon according to silicon wafer thickness, and the correlation with a-Si:H/c-Si heterojunction solar cell performances were investigated. The wafers passivated by p(n)-doped a-Si:H layers show poor passivation properties because of the doping elements, such as boron(B) and phosphorous(P), which result in a low minority carrier lifetime (MCLT). A decrease in open circuit voltage (Voc) was observed when the wafer thickness was thinned from 170μm to 50μm. On the other hand, wafers incorporating intrinsic (i) a-Si:H as a passivation layer showed high quality passivation of a-Si:H/c-Si. The implied Voc of the ITO/p a-Si:H/i a-Si:H/n c-Si wafer/i a-Si:H/n a-Si:H/ITO stacked layers was 0.715 V for 50μm c-Si substrate, and 0.704 V for 170μm c-Si. The Voc in the heterojunction solar cells increased with decreases in the substrate thickness. The high quality passivation property on the c-Si led to an increasing of Voc in the thinner wafer. Short circuit current decreased as the substrate became thinner because of the low optical absorption for long wavelength light. In this paper, we show that high quality passivation of c-Si plays a role in heterojunction solar cells and is important in the development of thinner wafer technology.

용해성이 우수하며, 강한 electron-withdrawing 특성을 나타내는 cyano group 을 가지는, 새로운 전자acceptor 재료인 malononitrile 유도체 (2-(2,6-bis((E)-4-tert-butylstyryl)-4H-pyran-4-ylid-ene)malononitrile (t-BuPM)을 합성하였다. 합성된 acceptor 재료 t-BuPM을 donor와 acceptor 재료로 널리 사용되고 있는 poly[2-Methoxy-5-(2-EthylHexyloxy)-P-Phenylene-Vinylene](MEH-PPV)와 (6)-1-(3-(methoxycarbonyl)propyl)-{5}-1-1-phenyl-[5,6]-fullerene (PCBM)과 함께ternary blend system으로 유기 태양전지 소자를 제작하였다. 소자는 ITO/PEDOT:PSS/MEH-PPV:t-BuPM:PCBM/Al 구조와 같이 제작하여 광전변환 특성을 측정하였다. 합성된 재료의 HOMO와LUMO energy level은 -5.97,-3.49eV로 측정되었으며, t-BuPM을 사용하여 ternary blend system 으로 제작된소자의 에너지변환 효율은 AM 1.5G, 1 sun 조건(100mA/cm2)에서 1.85%로 측정되었다. Short circuit current density (Jsc)는 5.54mA/cm2, fillfactor(FF)는 41%, open circuit voltage(Voc)는 0.80 V로 측정되었다.

The a-Si:H/c-Si hetero-junction (HJ) solar cells have a variety of advantages in efficiency and fabrication processes. It has already demonstrated about 23% in R&D scale and more than 20% in commercial production. In order to further reduce the fabrication cost of HJ solar cells, fabrication processes should be simplified more than conventional methods which accompany separate processes of front and rear sides of the cells. In this study, we propose a simultaneous deposition of intrinsic thin a-Si:H layers on both sides of a wafer by dual hot wire CVD (HWVCD). In this system, wafers are located between tantalum wires, and a-Si:H layers are simultaneously deposited on both sides of the wafer. By using this scheme, we can reduce the process steps and time and improve the efficiency of HJ solar cells by removing surface contamination of the wafers. We achieved about 16% efficiency in HJ solar cells incorporating intrinsic a-Si:H buffers by dual HWCVD and p/n layers by PECVD.