In this work, a series of BaTiO3-based ceramic materials, Ba(Al0.5Nb0.5)xTi1-xO3 (x = 0, 0.04, 0.06, 0.08), were synthesized using a standard solid-state reaction technique. X-ray diffraction profiles indicated that the Al+Nb co-doping into BaTiO3 does not change the crystal structure significantly with a doping concentration up to 8 %. The doping ions exist in Al3+ and Nb5+ chemical states, as revealed by X-ray photoelectron spectroscopy. The frequencydependent complex dielectric properties and electric modulus were studied in the temperature range of 100~380 K. A colossal dielectric permittivity (>1.5 × 104) and low dielectric loss (<0.01) were demonstrated at the optimal dopant concentration x = 0.04. The observed dielectric behavior of Ba(Al0.5Nb0.5)xTi1-xO3 ceramics can be attributed to the Universal Dielectric Response. The complex electric modulus spectra indicated the grains exhibited a significant decrease in capacitance and permittivity with increasing co-doping concentration. Our results provide insight into the roles of donor and acceptor co-doping on the properties of BaTiO3-based ceramics, which is important for dielectric and energy storage applications.

The aggressive scaling of dynamic random-access memory capacitors has increased the need to maintain high capacitance despite the limited physical thickness of electrodes and dielectrics. This makes it essential to use high-k dielectric materials. TiO2 has a large dielectric constant, ranging from 30~75 in the anatase phase to 90~170 in rutile phase. However, it has significant leakage current due to low energy barriers for electron conduction, which is a critical drawback. Suppressing the leakage current while scaling to achieve an equivalent oxide thickness (EOT) below 0.5 nm is necessary to control the influence of interlayers on capacitor performance. For this, Pt and Ru, with their high work function, can be used instead of a conventional TiN substrate to increase the Schottky barrier height. Additionally, forming rutile-TiO2 on RuO2 with excellent lattice compatibility by epitaxial growth can minimize leakage current. Furthermore, plasma-enhanced atomic layer deposition (PEALD) can be used to deposit a uniform thin film with high density and low defects at low temperatures, to reduce the impact of interfacial reactions on electrical properties at high temperatures. In this study, TiO2 was deposited using PEALD, using substrates of Pt and Ru treated with rapid thermal annealing at 500 and 600 °C, to compare structural, chemical, and electrical characteristics with reference to a TiN substrate. As a result, leakage current was suppressed to around 10-6 A/cm2 at 1 V, and an EOT at the 0.5 nm level was achieved.

The effects of La3+ substitution for Sr2+-site on the crystal structure and the dielectric properties of (Ba0.7Sr0.3-3x/2Lax) (Ti0.9Zr0.1)O3 (BSLTZ) (0.005 ≤ x ≤ 0.02) ceramics were investigated. The structural characteristics of the BSLTZ ceramics were quantitatively evaluated using the Rietveld refinement method from X-ray diffraction (XRD) data. For the specimens sintered at 1,550 °C for 6 h, a single phase with a perovskite structure and homogeneous microstructure were observed for the entire range of compositions. With increasing La3+ substitution (x), the unit cell volume decreased because the ionic size of La3+ (1.36 Å) ions is smaller than that of Sr2+ (1.44 Å) ions. With increasing La3+ substitution (x), the tetragonal phase fraction increased due to the A-site cation size mismatch effect. Dielectric constant (εr) increased with the La3+ substitution (x) due to the increase in tetragonality (c/a) and the average B-site bond valence of the ABO3 perovskite. The BSLTZ ceramics showed a higher dielectric loss due to the smaller grain size than that of (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 ceramics. BSLTZ (x = 0.02) ceramics met the X7R specification proposed by the Electronic Industries Association (EIA).

The effects of Ni2+ substitution for Mg2+-sites on the microwave dielectric properties of (Mg1-xNix)(Ti0.95(Mg1/3 Ta2/3)0.05)O3 (0.01 ≤ x ≤ 0.05) (MNTMT) ceramics were investigated. MNTMT ceramics were prepared by conventional solid-state reaction. When the MgO / TiO2 ratio was changed from 1.00 to 1.02, MgTi2O5 was detected as a secondary phase along with the MgTiO3 main phase in the MNTMT specimens sintered at 1,400 °C for 4h. For the MNTMT specimens with MgO / TiO2 = 1.07 sintered at 1,400 °C for 4h, a single phase of MgTiO3 with an ilmenite structure was obtained from the entire range of compositions. The relative density of all the specimens sintered at 1,400 °C for 4h was higher than 95 %. The quality factor (Qf) of the sintered specimens depended strongly on the degree of covalency of the specimens, and the sintered specimens with x = 0.01 showed the maximum Qf value of 489,400 GHz. The dielectric constant (K) decreased with increasing Ni2+ content because Ni2+ had a lower dielectric polarizability (1.23Å3) than Mg2+ (1.32Å3). As Ni2+ content increased, the temperature coefficient of resonant frequency (TCF) improved, from -55.56 to -21.85 ppm/°C, due to the increase in tolerance factor (t) and the lower dielectric constant (K)

This article reported a simple method for preparing diamond/SiC composites by polymer impregnation and pyrolysis (PIP) process, and the advantages of this method were discussed. Only diamond and SiC were contained in the diamond/SiC composite prepared by PIP process, and the diamond particles remained thermally stable up until the pyrolysis temperature was increased to 1600 °C. The pyrolysis temperature has a significant impact on the thermal conductivity and dielectric properties of composites. The thermal conductivity of the composite reaches a maximum value of 63.9 W/mK when the pyrolysis temperature is 1600 °C, and the minimum values of the real and imaginary part of the complex permittivity are 19.5 and 0.77, respectively. The PIP process is a quick and easy method to prepare diamond/SiC composites without needing expensive equipment, and it is of importance for promoting its application in the field of electric packaging substrate.

(Bi1/2Na1/2)TiO3 (BNT)-based ceramics are considered promising candidates for actuator application owing to their excellent electromechanical strain properties However, to obtain large strain properties, there remain several issues such as thermal stability and high operating fields. Therefore, this study investigates a reduction of operating field in (0.98-x)Bi1/2Na1/ 2TiO3-0.02 BiAlO3-xSrTiO3 (BNT-2BA-100xST, x = 0.20, 0.21, 0.22, 0.23, and 0.24) via analyses of the microstructure, crystal structure, dielectric, polarization, ferroelectric and electromechanical strain properties. The average grain size of BNT-2BA- 100xST ceramics decreases with increasing ST content. Results of polarization and electromechanical strain properties indicate that a ferroelectric to relaxor state transition is induced by ST modification. As a consequence, a large electromechanical strain of 592 pm/V is obtained at a relatively low electric field of 4 kV/mm in 22 mol% ST-modified BNT-2BA ceramics. We believe that the materials synthesized in this study are promising candidates for actuator applications.

The various sintered samples comprising of 72 wt%(Al2O3) : 28 wt%(SiO2) based ceramics were fabricated using a colloidal processing route. The phase analysis of the ceramics was performed using an X-ray diffractometer (XRD) at room temperature confirming the presence of Al2O5Si and Al5.33Si0.67O9.33. The surface morphology of the fracture surface of the different sintered samples having different sizes of grain distribution. The resistive and capacitive properties of the three different sintered samples at frequency sweep (1 kHz to 1 MHz). The contribution of grain and the non-Debye relaxation process is seen for various sintered samples in the Nyquist plot. The ferroelectric loop of the various sintered sample shows a slim shape giving rise to low remnant polarization. The excitation performance of the sample at a constant electric signal has been examined utilizing a designed electrical circuit. The above result suggests that the prepared lead-free ceramic can act as a base for designing of dielectric capacitors or resonators.

Orthorhombic dysprosium manganite DyMnO3 with single phase is synthesized using solid-state reaction technique and the crystal structure and dielectric properties as functions of temperature and frequency are investigated. Thermally activated dielectric relaxations are shown in the temperature dependence of the complex permittivity, and the respective peaks are found to be shifted to higher temperatures as the measuring frequency increases. In Arrhenius plots, activation energies of 0.32 and 0.24 eV for the high- and low-temperature relaxations are observed, respectively. Analysis of the relationship between the real and imaginary parts of the permittivity and the frequencies allows us to explain the dielectric behavior of DyMnO3 ceramics by the universal dielectric response model. A separation of the intrinsic grain and grain boundary properties is achieved using an equivalent circuit model. The dielectric responses of this circuit are discerned by impedance spectroscopy study. The determined grain and grain boundary effects in the orthorhombic DyMnO3 ceramics are responsible for the observed high- and low-temperature relaxations in the dielectric properties.

주파수 변화에 따른 에폭시 복합체의 전기적 특성을 알아보기 위하여 온도 범위 20[℃], 100[℃], 140[℃], 주파수 범위 30[Hz]~3[MHz] 사이에서 유전율 및 유전손실을 측정하였다. 저주파 영역에서 유전분산과 유전 손실이 나타나고 있음을 확인하였다. 또한 고온 영역에서는 충진제의 영향으로 유전율이 감소하는 것을 확인하였다.

General D-glass(Dielectric glass) fibers are adaptable to PCBs(Printed circuit boards) because they have a low dielectric constant of about 3.5~4.5. However, very few papers have appeared on the physical characteristics of D-glass fibers. D-glass fibers were fabricated via continuous spinning process using bulk D-glass. In order to fabricate the D-glass, raw materials were put into a Pt crucible, melted at 1650℃ for 2 hrs, and then annealed at 521 ± 10℃ for 2 hrs. We obtained transparent clear glass. The transmittance and adaptable temperature for spinning of the bulk marble glass were characterized using a UV-visible spectrometer and a viscometer. Continuous spinning was carried out using direct melting spinning equipment as a function of the fiberizing temperature in the range of 1368℃ to 1460℃, while the winder speed was between 100 rpm and 200 rpm. We investigated the physical properties of the D-glass fibers. The average diameters of the glass fibers were measured by optical microscope and FE-SEM. The average diameters of the D-glass fibers were 21.36 um at 100 rpm and 34.06 um at 200 rpm. The mechanical properties of the fibers were confirmed using a UTM(Universal materials testing machine). The average tensile strengths of the D-glass fibers were 467.03 MPa at 100 rpm and 522.60 MPa at 200 rpm.

The aim of this work was to evaluate the dielectric properties of impregnated and activated palm kernel shells (PKSs) samples using two activating agents, potassium carbonate (K2CO3) and sodium hydroxide (NaOH), at three impregnation ratios. The materials were characterized by moisture content, carbon content, ash content, thermal profile and functional groups. The dielectric properties were examined using an open-ended coaxial probe method at various microwave frequencies (1–6 GHz) and temperatures (25, 35, and 45°C). The results show that the dielectric properties varied with frequency, temperature, moisture content, carbon content and mass ratio of the ionic solids. PKSK1.75 (PKS impregnated with K2CO3 at a mass ratio of 1.75) and PKSN1.5 (PKS impregnated with NaOH at a mass ratio of 1.5) exhibited a high loss tangent (tan δ) indicating the effectiveness of these materials to be heated by microwaves. K2CO3 and NaOH can act as a microwave absorber to enhance the efficiency of microwave heating for low loss PKSs. Materials with a high moisture content exhibit a high loss tangent but low penetration depth. The interplay of multiple operating frequencies is suggested to promote better microwave heating by considering the changes in the materials characteristics.

A few importers of marine products has practiced ice glazing of frozen fish and forced water injection into small octopus to increase their weight. These rampant practices have recently become a serious social issue. Therefore, this study was conducted to develop non-destructive detection methods for verifying forced water injected frozen small octopus using dielectric properties. The weight and dielectric properties of live small octopuses imported from China were measured using an electronic scale and dielectric probe connected with vector network analyzer, respectively. The frequency range from 0.5 to 4 GHz was used for measurement of dielectric properties of small octopus samples. The moisture contents of live small octopuses were determined by convection drying at 105°C for 24 h. To increase weight of small octopus samples, each sample was placed in a container including 2% polyphosphate solution of 800 mL and was kept for 24 h in a refrigerator. Then, the sample was removed from the solution and was frozen at -35°C for 24 h. The moisture contents of live small octopuses were 81.6 ± 1.9% (wb). Regardless of weight of live small octopuses, dielectric constant (ε′) and dielectric loss factor (ε′′) were from 76.09 to 58.62 and from 101.95 to 28.72, respectively. The average weight gain of small octopuses immersed in the solution was approximately 40.6%. Dielectric constant (ε′) and dielectric loss factor (ε′′) of forced water injected small were from 78.18 to 66.71 and from 51.96 to 25.05, respectively. In addition, there was a significant difference between dielectric properties and penetration depth of fresh frozen and forced water injected frozen small octopuses. The results clearly showed that dielectric properties of small octopuses affected by moisture contents could be an important factor to detect forced water injected frozen small octopuses.

The effects of an excess of Bi on the piezoelectric and dielectric properties of 0.60Bi1+xFeO3-0.40BaTiO3 (x = 0, 0.01, 0.03, 0.05, 0.07) were investigated. The ceramics were processed through a conventional solid state reaction method and then quenched after sintering at different temperatures in the range of 980~1070 oC. A single perovskite structure without any secondary phase was confirmed for all compositions and temperatures. It was found that excess Bi reduced the sintering temperatures, acted as a sintering aid and enhanced the properties in combination with quenching. Curie temperature (TC) was found to slightly increase due to the presence of excess Bi; electrical properties were also improved by quenching. At x = 0.03 and 1030 oC, remnant polarization (2Pr) was as high as 45.4 μC/cm2 and strain at 40 kV/cm was up to 0.176 %.

주파수 (30 ~ 300k Hz)와 온도 범위 (20 ~ 160 ℃)가 경화 조건에 따른 에폭시 수지의 전 기적 특성 (유전율 및 유전손실)에 미치는 영향을 조사하였다. 유리전이온도(Tg) 이하에서는 주파수와 상관없이 각각 3가지의 시편에서 유전분산 현상이 나타나지 않으며, 유리전이온도(Tg) 이상에서 유전분 산 현상이 나타났다.

Bi0.5Na0.5TiO3 (BNT) based ceramics are considered potential lead-free alternatives for Pb(Zr,Ti)O3(PZT) based ceramics in various applications such as sensors, actuators and transducers. However, BNT-based ceramics have lower electromechanical performance as compared with PZT based ceramics. Therefore, in this work, lead-free bulk 0.99[(Bi0.5Na0.5)0.935Ba0.065](1-x)LaxTiO3-0.01SrZO3 (BNBTLax-SZ, with x = 0, 0.01, 0.02) ceramics were synthesized by a conventional solid state reaction The crystal structure, dielectric response, degree of diffuseness and electric-field-induced strain properties were investigated as a function of different La concentrations. All samples were crystallized into a single phase perovskite structure. The temperature dependent dielectric response of La-modified BNBT-SZ ceramics showed lower dielectric response and improved field-induced strain response. The field induced strain increased from 0.17% for pure BNBT-SZ to 0.38 % for 1 mol.% La-modified BNBT-SZ ceramics at an applied electric field of 6 kV/mm. These results show that Lamodified BNBT-SZ ceramic system is expected to be a new candidate material for lead-free electronic devices.

The effects of Nb doping on the crystal structure, microstructure, and dielectric ferroelectric and piezoelectric properties of (Bi0.5Na0.5)0.935Ba0.065Ti(1-x)NbxO3-0.01SrZrO3 (BNBTNb-SZ, with x = 0, 0.01 and 0.02) ceramics have been investigated. X-ray diffraction patterns revealed that all ceramics have a pure perovskite structure with tetragonal symmetry. The grain size of the ceramics slightly decreased and a change in grain morphology from square to spherical shape was observed in the Nb-doped samples. The maximum dielectric constant temperature (Tm) increases with increasing amount of Nb; however, ferroelectric-relaxor transition temperature (TF-R) and maximum dielectric constant (εm) values decrease gradually. Nb addition disrupted the polarization hysteresis loops of the BNBT-SZ ceramics by leading a reduction in the remnant polarization coercive field and piezoelectric constant.

The effect of sintering temperature on the microstructure, electrical and dielectric properties of (V, Mn, Co, Dy, Bi)- codoped zinc oxide ceramics was investigated in this study. An increase in the sintering temperature increased the average grain size from 4.7 to 10.4 μm and decreased the sintered density from 5.47 to 5.37 g/cm3. As the sintering temperature increased, the breakdown field decreased greatly from 6027 to 1659 V/cm. The ceramics sintered at 900 oC were characterized by the highest nonlinear coefficient (36.2) and the lowest low leakage current density (36.4 μA/cm2). When the sintering temperature increased, the donor concentration of the semiconducting grain increased from 2.49 × 1017 to 6.16 × 1017/cm3, and the density of interface state increased from 1.34 × 1012 to 1.99 × 1012/cm2. The dielectric constant increased greatly from 412.3 to 1234.8 with increasing sintering temperature.

This paper, the hardness of the silicone rubber wire for 50, 60 degrees, 70 degrees High Temperature Vulcanizing (HTV) method using specimens were fabricated. In this paper, in order to investigate the dielectric properties of silicone rubber for wire specimens, the temperature range of 30℃～170℃, the frequency range from 100Hz～4.5MHz report surveyed about the frequency and temperature dependent properties.

The dielectric properties and phase transformation of poled <001>-oriented Pb(Mg1/3Nb2/3)O3-x%PbTiO3(PMN-x%PT) single crystals with compositions of x=20, 30, and 35mole% are investigated for orientations both parallel andperpendicular to the [001] poling direction. An electric-field-induced monoclinic phase was observed for the initial poled PMN-30PT and PMN-35PT samples by means of high-resolution synchrotron x-ray diffraction. The monoclinic phase appears from−25oC to 100oC and from −25oC to 80oC for the PMN-30PT and PMN-35PT samples, respectively. The dielectric constant (ε)-temperature (T) characteristics above the Curie temperature were found to be described by the equation(1/ε−1/εm)1/n=(T−Tm)/C, where εm is the maximum dielectric constant and Tm is the temperature giving εm, and n and C are constants that changewith the composition. The value of n was found to be 1.82 and 1.38 for 20PT and 35PT, respectively. The results of meshscans and the temperature-dependence of the dielectric constant demonstrate that the initial monoclinic phase changes to a singledomain tetragonal phase and a to paraelectric cubic phase. In the ferroelectric tetragonal phase with a single domain state, thedielectric constant measured perpendicular to the poling direction was dramatically higher than that measured in the paralleldirection. A large dielectric constant implies easier polarization rotation away from the polar axis. This enhancement is believedto be related to dielectric softening close to the morphotropic phase boundary.

Presently, the most promising family of lead-free piezoelectric ceramics is based on K0.5Na0.5NbO3(KNN). Lithium, silver and antimony co-doped KNN ceramics show high piezoelectric properties at room temperature, but often suffer from abnormal grain growth. In the present work, the (Ba0.85Ca0.15)(Ti0.88Zr0.12)O3 component, which has relaxor ferroelectric characteristics, was doped to suppress the abnormal grain growth. To investigate this effect, Lead-Free 0.95(K0.5Na0.5)0.95Li0.05NbO3-(0.05-x)AgSbO3-x(Ba0.85Ca0.15)(Ti0.88Zr0.12)O3[KNLN-AS-xBCTZ] piezoelectric ceramics were synthesized by ball mill and nanosized-milling processes in lead-Free 0.95(K0.5Na0.5)0.95Li0.05NbO3-(0.05-x)AgSbO3 in order to suppress the abnormal grain growth. The nanosized milling process of calcined powders enhanced the sintering density. The phase structure, microstructure, and ferroelectric and piezoelectric properties of the KNLN-AS ceramics were systematically investigated. XRD patterns for the doped and undoped samples showed perovskite phase while tetragonality was increased with increasing BCZT content, which increase was closely related to the decrease of TO-T. Dense and uniform microstructures were observed for all of the doped BCZT ceramics. After the addition of BCTZ, the tetragonal-cubic and orthorhombic-tetragonal phase transitions shifted to lower temperatures compared to those for the pure KNNL-AS. A coexistence of the orthorhombic and tetragonal phases was hence formed in the ceramics with x = 0.02 mol at room temperature, leading to a significant enhancement of the piezoelectric properties. For the composition with x = 0.02 mol, the piezoelectric properties showed optimum values of: d33 = 185 pC/N, kp = 41%, Tc=325˚C, TO-T=-4˚C.