We investigated the cause of liquid crystal alignment when an ion beam is irradiated to the liquid crystal(LC) alignment film for liquid crystal alignment. We investigated liquid crystal alignment in response to changes in ion beam (IB) incident angle and electro-optical (EO) properties of twisted nematic (TN)-liquid crystal displays (LCDs) on polyimide (PI) surface. X-ray photoelectron spectroscopy(XPS) analysis showed that the C=O chemical bond strength decreased with changes in the IB incident angle, while the C-O chemical bond strength increased. Therefore, it was found that the dipole-dipole interaction between C-O chemical bonds and LC molecules has a chemical ordering effect. Good and uniform alignment of nematic LC was observed on the liquid crystal alignment layer surface by IB irradiation, and good EO properties of IB aligned TN-LCD were achieved on the liquid crystal alignment layer surface.

The flaw of low dispersibility in the metal matrix brought on by graphene's full crystal structure can be improved by the application of ion beam radiation to the surface of the material. Copper atoms are uniformly dispersed on the modified graphene oxide ( GOM) surface after being irradiated to a copper ion beam, and during the sputtering modification, the valence state of copper is changed, resulting in the formation of a new CuO phase on the graphene oxide (GO) surface. Therefore, after copper ion beam irradiation of graphene, the interfacial adhesion between GOM and copper matrix is enhanced, and the wear resistance is significantly improved. When the GOM content is low, it can withstand most of the load during the friction and wear test, which reduces the wear of the copper matrix and the occurrence of fatigue cracks at the interface of the composite material.

Ion-beam irradiation(IB) on HfO2 surface induced high-performance liquidcrystal(LC) driving at a 1-V threshold with vertical alignment of liquid crystals(LC). The high-k materials Atomic layer deposition was used to obtain LC orientation on ultra thin and high-quality films of HfO2 layers. To analyze surface morphological transition of HfO2 which can act as physic alignment effect of LC, atomic force micro scopy images are employed with various IB intensities. The contact angle was measured to elucidate the mechanism of vertical alignment of LC on HfO2 with IB irradiation. Contact angle measurements show the surface energy changes via IB intensity increasing.

Using lanthanum zinc oxide (LZO) film with the ion-beam irradiation, uniform and homogeneous liquid crystal (LC) alignment was achieved. To fabricate the LZO thin film on glass substrate, solution process was conducted as a deposition method. Cross-polarized optical microscopy (POM) and the crystal rotation method reveal the state of LC alignment on the ion-beam irradiated LZO film. Between orthogonally placed polarizers, POM image showed constant black color with regular transmittance. Furthermore, collected incidence angle versus transmittance curve from the crystal rotation method revealed that the LC molecules on the ion-beam irradiated LZO film were aligned homogeneously. Atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) were conducted to reveal the relationship between the ion-beam irradiation and the LC alignment. The ion-beam irradiation changed the LZO film surface to rougher than before by etching effect. Numerical roughness values from AFM analysis supported this phenomenon specifically. XPS analysis showed the chemical composition change due to the ion-beam irradiation by investigation of O 1s, La 3d and Zn 2p spectra. The ion-beam irradiation induced the breakage of chemical bonds in the LZO film surface and this occurred surface chemical anisotropic characteristics for uniform LC alignment.

The ion-beam irradiated lanthanum zinc oxide (LZO) films were conducted as liquid crystal (LC) alignment layer to achieve uniform and homogeneous alignment of LC molecules. Polarized optical microscopy and the pre-tilt angle measurements revealed the alignment characteristics of LC molecules on the LZO film surface. Physical characteristics of the LZO film surface were analyzed by field emission scanning electron microscope and atomic force microscopy. The strong ion-beam irradiation on the LZO film changed surface rougher than before and induced physical anisotropic characteristics. Chemical composition of the LZO film was investigated by X-ray photoelectron spectroscopy and it was revealed that the ion-beam irradiation induced the breakage of the metal-oxide bonds. Due to this, anisotropic dipole moment which related with van der Waals force between LC molecules and alignment layer was induced. Because of this, LC molecules were anchored to the LZO film surface to achieve uniform LC alignment. Collecting the capacitance-voltage curve, residual DC of the LC cell with the LZO films was measured and it was verified that the LC cell with the LZO film had a nearly zero residual DC. Therefore, the ion-beam irradiated LZO film is an efficient method as an LC alignment layer

In this study, we studied the alignment characteristics of liquid crystal on polyimide substrate when irradiated with ion beam in oblique direction on uniformly coated polyimide substrate. The inclined irradiation angle of the ion beam was set to 30 degree, 45 degree and 60 degree and the characteristics were observed for 1 minute and 2 minutes at an ion beam irradiation intensity of 600 to 3,000 eV for each angle. The Alignment of the liquid crystals were observed using a polarized microscope after preparing antiparallel specimens. The pretilt angle of the liquid crystal using the crystal rotation method was measured, and the applicability to actual products was evaluated. Experimental results showed that uniformly aligned liquid crystals could be obtained in samples irradiated at 1 and 2 minutes with an ion beam intensity of 1200 eV or higher when irradiated with 30 degree and 45 degree tilted ion beams. And, at 60 tilted degree, It shows that uniformly aligned liquid crystals could be obtained in samples irradiated at 1 and 2 minutes with an ion beam intensity of 2400 eV or higher. The pretilt angle of the liquid crystal showed the best characteristics when irradiated with ion beam inclined at 45 degrees, and it was confirmed that the pretilt angle was 0.2 to 1.3 degrees, which is usable for horizontally oriented LCD.

Laminated graphene oxide (GO) membrane has great attention for ultrafast flux membrane with well-defined pore structure. However, laminated structure is sensitive to various factors such as functionalization, fabrication method and especially support morphology due to ultrathin thickness. Herein, we investigated surface roughness effect by controlling systematically wrinkled structure of support with ion beam treatment. Wrinkled surface of support generates free volume at interface, facilitating fast water transport, which confirmed 6.4 times enhancement on permeation of water while maintaining high rejection of all dye molecules. The tunability of nanostructure through support control can provide development for ultrathin GO membrane in water purification.

In this study, the ion beam irradiation method on organic (polyamic acid and epoxy resin compound) overcoat layer was investigated. The use of ion beam on overcoat organic layer has the potential to replace conventional rubbing process. The traditional alignment layer is made by coating process and 2 times heat treatment on polyamic acid liquid. It requires many times and process steps. However, it is very economic and convenient process substitute polyimide alignment layer for organic overcoat. In order to characterize the LC alignment the polarized microscope image and pretilt angle measurement were investigated. The good LC aligning capabilities treated on the organic overcoat thin film surfaces with ion beam exposure of 45° at above ion beam energy density of 1200 eV were achieved.

Carbon micropatterns (CMs) were fabricated from a negative-type SU-8 photoresist by proton ion beam lithography and pyrolysis. Well-defined negative-type SU-8 micropatterns were formed by proton ion beam lithography at the optimized fluence of 1×1015 ions cm–2 and then pyrolyzed to form CMs. The crosslinked network structures formed by proton irradiation were converted to pseudo-graphitic structures by pyrolysis. The fabricated CMs showed a good electrical conductivity of 1.58×102 S cm–1 and a very low surface roughness.

Homogeneous liquid crystal (LC) alignment on hafnium strontium oxide (HfSrO) films prepared by sol-gel process via ion-beam (IB) bombardment was investigated. Uniform LC alignment was achieved on the IB-irradiated HfSrO films at IB intensity of 1.8 keV. We confirmed the effect of surface morphology on LC alignment using field-emission scanning electron microscope (FE-SEM). In addition, we observed electro-optical characteristics of the twisted-nematic (TN)-LC cells based on HfSrO films to verify the possibility of LC display (LCD) application.

In this study, enhanced cation exchange capacity of polystyrene (PS) electrospun fibers by electron beam irradiation was investigated. PS spinning solutions were prepared by dissolving 25 wt% PS in 75 wt% mixed solvents (dimethylacetamide (DMAc)/tetrahydrofuran (THF)) at the ratio of 33/67% v/v with divinylbenzene (DVB; 0, 1, 2 phr)　as crosslink agent. The PS electrospun fibers were carried out at doses of 0 (control), 100 and 200 kGy. The ion exchange capacity (IEC) of PS electrospun fibers depend on the DVB concentration and irradiation dose. The PS electrospun fiber with DVB 1 phr at dose of 150 kGy showed the maximum IEC of 4.670 mmol/g.

Nematic liquid crystal (NLC) alignment effects on SiOF layers via ion-beam(IB) irradiation for four types of incident energy were successfully studied. The effect of fluorine addition on silicon oxide film properties as a function of SiOF₄/O₂gas flow ration was investigated. The SiOF thin film exhibits good chemical and the thermal stability of the SiOF thin film were sustained as function of the NLC alignment until 200℃. Also, the response-time characteristics of aligned LCD based on SiOF film were studied.

사파이어 (0001) 기판의 활성화 이온빔 (RIB) 처리 후 MOCVD에서 성장한 GaN박막의 열처리를 통한 구조 변화를 살펴보고, 전기적 성질의 변화를 관찰하기 위하여 전기로를 이용하여 열처리를 하였다. 시편의 분석을 위하여 DCXRD, Hall, TEM을 사용하였다. 1000˚C에서 시간을 변화시키면서 열처리한 시편에서 DCXRD의 FWHM는 약 50 arc-sec 정도 감소하였고, Hall 이동도는 약 80cm2/V.sec 정도 향상되었다. 가장 좋은 Hall 이동도를 보인 처리된 시편과 처리 전 시편의 TEM 비교 관찰에서 전위 밀도는 56~69% 정도 감소하였고 격자의 변형도 줄어들었다. 이것은 결정의 질과 전기적 성질 사이의 상관관계를 암시하며, 기판의 RIB 처리와 성장 후 적절한 열처리의 조합이 MOCVD로 성장시킨 GaN 박막의 특성을 개선시키는 것을 명확하게 보여준다.