Hybrid nanocomposites of aluminium (NHAMMCs) made from AA5052 are fabricated via stir casting route by reinforcing 12 wt% Si3N4 and 0.5 wt% of graphene for usage in aeronautical and automotive applications due to the lower density and higher strength to weight proportion. The wear characteristics of the NHAMMCs are evaluated for different axial load, rotational speed, sliding distance and sliding time based on Box-Behnken design (BBD) of response surface methodology (RSM). Orowan strengthening mechanism is identified from optical image which improves the strength of the composite. Outcomes show that with higher axial load and rotational speed, there is substantial increase in wear loss whereas with increased sliding distance and sliding time there is no considerable increase in wear loss due to the lubricating nature of the reinforced graphene particles since it has higher surface area to volume ratio. Besides, artificial intelligence approach of neuro-fuzzy (ANFIS) model is developed to predict the output responses and the results are compared with the regression model predictions. Prediction from ANFIS outplays the regression model prediction.

Silicon nitride thin films are deposited by RF (13.57 MHz) magnetron sputtering process using a Si (99.999 %) target and with different ratios of Ar/N2 sputtering gas mixture. Corning G type glass is used as substrate. The vacuum atmosphere, RF source power, deposit time and temperature of substrate of the sputtering process are maintained consistently at 2 ~ 3 × 10−3 torr, 30 sccm, 100 watt, 20 min. and room temperature, respectively. Cross sectional views and surface morphology of the deposited thin films are observed by field emission scanning electron microscope, atomic force microscope and X-ray photoelectron spectroscopy. The hardness values are determined by nano-indentation measurement. The thickness of the deposited films is approximately within the range of 88 nm ~ 200 nm. As the amount of N2 gas in the Ar:N2 gas mixture increases, the thickness of the films decreases. AFM observation reveals that film deposited at high Ar:N2 gas ratio and large amount of N2 gas has a very irregular surface morphology, even though it has a low RMS value. The hardness value of the deposited films made with ratio of Ar:N2=9:1 display the highest value. The XPS spectrum indicates that the deposited film is assigned to non-stoichiometric silicon nitride and the transmittance of the glass with deposited SiO2-SixNy thin film is satisfactory at 97 %.

In the present study, the thermal conductivity of a silicon nitride(Si3N4) thin-film is evaluated using the dualwavelength pump-probe technique. A 100-nm thick Si3N4 film is deposited on a silicon (100) wafer using the radio frequency plasma enhanced chemical vapor deposition technique and film structural characteristics are observed using the X-ray reflectivity technique. The film’s thermal conductivity is measured using a pump-probe setup powered by a femtosecond laser system of which pump-beam wavelength is frequency-doubled using a beta barium borate crystal. A multilayer transient heat conduction equation is numerically solved to quantify the film property. A finite difference method based on the Crank-Nicolson scheme is employed for the computation so that the experimental data can be curve-fitted. Results show that the thermal conductivity value of the film is lower than that of its bulk status by an order of magnitude. This investigation offers an effective way to evaluate thermophysical properties of nanoscale ceramic and dielectric materials with high temporal and spatial resolutions.

Silicon nitride (SiNx:H) films made by plasma enhanced chemical vapor deposition (PECVD) are generally used as antireflection layers and passivation layers on solar cells. In this study, we investigated the properties of silicon nitride (SiNx:H) films made by PECVD. The passivation properties of SiNx:H are focused on by making the antireflection properties identical. To make equivalent optical properties of silicon nitride films, the refractive index and thickness of the films are fixed at 2.0 and 90 nm, respectively. This limit makes it easier to evaluate silicon nitride film as a passivation layer in realistic application situations. Next, the effects of the mixture ratio of the process gases with silane (SiH4) and ammonia (NH3) on the passivation qualities of silicon nitride film are evaluated. The absorption coefficient of each film was evaluated by spectrometric ellipsometry, the minority carrier lifetimes were evaluated by quasi-steady-state photo-conductance (QSSPC) measurement. The optical properties were obtained using a UV-visible spectrophotometer. The interface properties were determined by capacitancevoltage (C-V) measurement and the film components were identified by Fourier transform infrared spectroscopy (FT-IR) and Rutherford backscattering spectroscopy detection (RBS) - elastic recoil detection (ERD). In hydrogen passivation, gas ratios of 1:1 and 1:3 show the best surface passivation property among the samples.

C/SiC composites were prepared by boron nitride (BN)-assisted liquid silicon infiltration (LSI), and their anti-oxidation and mechanical properties were investigated. The microstructures, bulk densities, and porosities of the C/SiC composites demonstrated that the infiltration of liquid silicon into the composites improved them, because the layered-structure BN worked as a lubricant. Increasing the amount of BN improved the anti-oxidation of the prepared C/SiC composites. This synergistic effect was induced by the assistance of BN in the LSI. More thermally stable SiC was formed in the composite, and fewer pores were formed in the composite, which reduced inward oxygen diffusion. The mechanical strength of the composite increased up to the addition of 3% BN and decreased thereafter due to increased brittleness from the presence of more SiC in the composite. Based on the anti-oxidation and mechanical properties of the prepared composites, we concluded that improved anti-oxidation of C/SiC composites can be achieved through BN-assisted LSI, although there may be some degradation of the mechanical properties. The desired anti-oxidation and mechanical properties of the composite can be achieved by optimizing the BN-assisted LSI conditions.

Transparent ceramics are used in new technology because of their excellent mechanical properties over glasses. Transparent ceramics are nowadays widely used in armor, laser windows, and in high temperature applications. Silicon nitride ceramics have excellent mechanical properties and if transparent silicon nitride is fabricated, it can be widely used. h-BN has a lubricating property and is ductile. Therefore, adding h-BN to silicon nitride ceramics gives a lubricating property and is also machinable. Translucent silicon nitride was fabricated by hot-press sintering (HPS) and 57% transmittance was observed in the near infrared region. A higher wt. % of h-BN in silicon nitride ceramics does not favor transparency. The optical, mechanical, and tribological properties of BN dispersed polycrystalline Si3N4 ceramics were affected by the density, α:β-phase ratio, and content of h-BN in sintered ceramics. The hot pressed samples were prepared from the mixture of α-Si3N4, AlN, MgO, and h-BN at 1850˚C. The composite contained from 0.25 to 2 wt. % BN powder with sintering aids (9% AlN + 3% MgO). A maximum transmittance of 57% was achieved for the 0.25 wt. % BN doped Si3N4 ceramics. Fracture toughness increased and wear volume and the friction coefficient decreased with an increase in BN content. The properties such as transmittance, density, hardness, and flexural strength decreased with an increase in content of h-BN in silicon nitride ceramics.

Silicon nitride - silicon carbide composite was developed by using an abrasive SiC powders as a raw material. The composites were prepared by mixing abrasive SiC powder with silicon, pressing and sintering at under nitrogen atmosphere in atmosphere controlled vacuum furnace. The proportion of silicon in the initial mixtures varied from 20 to 50 wt%. After sintering, crystalline phases and microstructure were characterized. All composites consisted of and as the bonding phases in SiC matrix. Their physical and mechanical properties were also determined. It was found that the density of the obtained composites increased with an increase in the content formed in the reaction.

This work will report a highly textured β-Si3N4 ceramic by aqueous slip casting in a magnetic field and subsequent pressureless sintering, Effects of the sintering aids, polymer dispersant, pH and stirring time on the stability of the Si3N4 slurries were studied. The textured β-Si3N4 with 97 % relative density could be obtained by slip casting in a magnetic field of 12 T and subsequent sintering at 1800 oC for 1 h. The textured microstructure is featured by the alignment of c-axis of β-Si3N4 crystals perpendicular to the magnetic field, and the Lotgering orientation factor, f, is determined to be 0.8.

The suitable tools for CGI material has not been developed yet because of high hardness, high toughness and very low machininability compared to the grey cast iron. And the tool life has been decreased as the contents of Ti in CGI material. From this research, we were able to do the high speed machining by using high toughness silicon nitride ceramic tools. The silicon nitride ceramic tool grade was specially designed and prepared with microstructure of elongated grains with higher aspect ratio (c/a) than conventional one.

In order to clarify the wear resistance as cutting tools, the effect of oxygen addition on oxidation behavior of the β-Si3N4 ceramics with 5 mass% Y2O3 and 2 or 4 mass% Al2O3 was investigated by performing oxidation tests in air at 1300° to 1400°C and cutting performance tests. From test results, we could conclude that the mechanical properties of β-Si3N4 ceramics depending on oxygen introduction are much effective on cutting performance improvements of β-Si3N4 ceramics.

The nanostructure control of ceramics can be achieved by using fine starting powder and retardation of grain growth. The spark plasma sintering technique is useful to retard the grain growth by rapid heating. In the present work, the change of microstructure was investigated with emphasis on the particle size of starting powder, the amount of sintering additive and the heating schedule. The rapid heating by spark plasma sintering gave the fine microstructure consisting of equiaxed grains with the same size as starting particles. The spark plasma sintering of fine powder was effective to control the microstrucutre on nano-meter level.

Si3N4에 2wt% Al2O3와 6wt% Y2O3을 첨가한 분말을 가스압 소결 방법으로 시편을 제조하였다. 이때 소결시 시간변화에 따른 공기 중에서 마모 특성을 비교하였다. 소결 시간에 따른 마모 특성의 변화는 기계적 성질, 즉, 파괴인성 등이 영향을 주는 것으로 나타났다. 소결 시간이 길어지면 큰 elongated 입자의 과잉성장에 따라 곡강도 및 파괴인성이 낮아져 이 결과 마모가 증가되었다. 이때 나타난 결과에 의하면 공기 중에서 질화규소의 마모특성에 영향을 주는 인자는 여러 가지 기계적 특성 중에서 파괴인성 및 곡강도가 미치는 영향이 크게 나타났다.

The effect of - seeding on microstructural development of silicon nitride based materials has been investigated. In particular, to observe more distinctly the abnormal grain growth in pressureless sintering, fine -(mean particle size: 0.26 ) powder classified by sedimentation method was used. It was possible to prepare silicon nitride with abnormally grown grains under low nitrogen pressure of 1 atm thanks to the heterogeneous nucleation on seed particles. The size and morphology of silicon nitride grains were strongly influenced by the presence of - seed and overall chemical composition. For specimens with initially low -content, the large grains grew without a significant impingement by other large grains. On the contrary, for specimens with initially high -content, steric hindrance was effective. The resulting microstructure was less inhomogeneous and characterized by unimodal grain size distribution.

질화규소로 코팅된 질화규소-질화붕소 이층 층상복합재료의 접촉하중에 의한 파괴거동을 고찰하였다. 그 결과 코팅층내에서 새로운 종류의 균열들이 발견되었고, 이러한 균열들은 기하학적으로 원추 모양을 가짐을 확인하였다. 외부에서 가한 하중의 에너지는 코팅층 뿐 아니라 damage를 흡수할 수 있는 기판층 내로 분산되어 코팅층에서 시작된 균열들의 전파가 억제되었다.

2종류의 질화규소에 대하여 Ring형시험편을 이용하여 접촉피로시험을 하였다. 질화규소는 금속재료에서와 같은 형태의 피로현상을 나타냈고, 파면해석 및 관찰결과 접촉피로에 있어서 균열의 발생은 고탄소크롬강의 경우와 같이 표면하의 반복전단응력에 의한 것으로 밝혀졌다. 그리고 시험펴 파단면에서 표면하의 Heltz전단응력의 변동이 최대로 되는 깊이의 위치에 다수의 균열이 관찰되었다.

본 연구는 가스압소결 질화규소의 혼합모드에 있어서 파괴거동을 실온 및 1000˚C에서 조사하였다. 실험은 누프압흔을 도입한 시험편을 사용하여 소둔처리에 의해 잔류응력을 제거하고, 4점굽힘법을 이용하였다. 실험결과, 종래 제창되고 있는 파괴기준과 일치하지 않고, 그래서 새롭게 4차관수의 근사식을 제안하였다.

질화규소 요업체에서 입계상의 변화가 파괴인성에 미치는 영향에 대해 살펴보았다 실험에는 Si3N4-Y2O3-SiO2(YS)계와 Si3N4-Y2O3-A12O3(YA) 계를 사용하였으며, 1750˚C에서 Can/HIP 처리한 후 1800~2000˚C 온도구간에서 열처리시키면서 입계상의 변화에 따른 파괴인성의 변화를 조사하였다. 열처리 온도구간에서 입계상이 비정질상만으로 존재하였던 YA계의 경우는 열처리 온도가 증가되어 입성장됨에 따라 파괴인성 값이 증가되었으나, 1900˚C 이상에서 열처리될 때 입계상이 결정상에서 비정질상으로 변화하였던 YS계의 경우는 오히려 파괴인성 값이 급격히 감소되었다. YS계에서 파괴인성의 급격한 저하는 열처리 온도 증가에 따라 입계상이 결정상과 비정질상의 공존 상태에서 비정질상만의 상태로 전이하며 파괴거동에 영향을 미쳤기 때문이라고 생각된다.