본 연구는 레이저 가공 비천공 breathable 필름을 포장재로 이용하여 새싹채소의 저장성을 구명하기 위해 다채, 콜라비, 유채, 배추, 적무, 브로콜리 등 여섯 종류의 새싹채소를 개별 및 혼합하여 10℃에서 저장중 생체중의 변화와 산소, 이산화탄소, 에틸렌 가스 농도 변화를 측정하고 저장종료 후 패널테스트를 통해 외관상의 품질과 이취정도를 측정하였다. 20,000cc, 60,000cc, 그리고 100,000cc 비천공 필름을 사용하였을 때 필름의 가스 투과도에 의한 새싹채소들의 수분손실로 발생하는 생체중의 변화는 모든 처리구에서 0.5% 미만으로 매우 적었다. 가스의 변화는 20,000cc 필름에서 산소 농도는 감소하고 이산화탄소의 농도는 증가하는 경향을 보였는데 이것은 최적의 MA 조건에 가까운 것으로 저장성 향상에 도움을 주는 것으로 판단된다. 동일한 필름에서 관능검사를 통한 외관상 품질 과 이취 발생정도도 가장 우수한 결과를 보여주었다. 여섯가지 새싹채소를 동일한 무게 비율로 혼합하여 개별 포장 실험에 사용한 동일한 용기에 각각 유공필름과 20,000cc, 40,000cc, 60,000cc, 80,000cc, 그리고 100,000cc 비천공 breathable 필름을 포장재로 7일간 저장한 실험의 결과, 포장재의 가스 투과도는 생체중의 변화에 영향을 미치지 않았다. 그러나 호흡에 의한 변화율에 비해 필름의 이산화탄소와 산소의 투과성에 의한 교환비율이 적은 20,000cc 비천공 필름은 관능검사에서 외관은 우수하였으나 다량의 이취가 발생하여 새싹채소의 혼합포장재로는 적절하지 않은 것으로 나타났다. 따라서 40,000cc 또는 60,000cc 비천공 breathable 필름이 복합 새싹채소 저장에는 유리한 것으로 판단된다.

Cu2ZnSn(S,Se)4 material is receiving an increased amount of attention for solar cell applications as an absorber layer because it consists of inexpensive and abundant materials (Zn and Sn) instead of the expensive and rare materials (In and Ga) in Cu(In,Ga)Se2 solar cells. We were able to achieve a cell conversion efficiency to 4.7% by the selenization of a stacked metal precursor with the Cu/(Zn + Sn)/Mo/glass structure. However, the selenization of the metal precursor results in large voids at the absorber/Mo interface because metals diffuse out through the top CZTSe layer. To avoid the voids at the absorber/Mo interface, binary selenide compounds of ZnSe and SnSe2 were employed as a precursor instead of Zn and Sn metals. It was found that the precursor with Cu/SnSe2/ZnSe stack provided a uniform film with larger grains compared to that with Cu2Se/SnSe2/ZnSe stack. Also, voids were not observed at the Cu2ZnSnSe4/Mo interface. A severe loss of Sn was observed after a high-temperature annealing process, suggesting that selenization in this case should be performed in a closed system with a uniform temperature in a SnSe2 environment. However, in the experiments, Cu top-layer stack had more of an effect on reducing Sn loss compared to Cu2Se top-layer stack.

ZnO thin films co-doped with Mg and Ga (MxGyZzO, x+y+z=1, x=0.05, y=0.02 and z=0.93) were preparedon glass substrates by RF magnetron sputtering with different sputtering powers ranging from 100W to 200W at a substratetemperature of 350oC. The effects of the sputtering power on the structural, morphological, electrical, and optical propertiesof MGZO thin films were investigated. The X-ray diffraction patterns showed that all the MGZO thin films were grown asa hexagonal wurtzite phase with the preferred orientation on the c-axis without secondary phases such as MgO, Ga2O3, orZnGa2O4. The intensity of the diffraction peak from the (0002) plane of the MGZO thin films was enhanced as the sputteringpower increased. The (0002) peak positions of the MGZO thin films was shifted toward, a high diffraction angle as thesputtering power increased. Cross-sectional field emission scanning electron microscopy images of the MGZO thin filmsshowed that all of these films had a columnar structure and their thickness increased with an increase in the sputtering power.MGZO thin film deposited at the sputtering power of 200W showed the best electrical characteristics in terms of the carrierconcentration (4.71×1020cm−3), charge carrier mobility (10.2cm2V−1s−1) and a minimum resistivity (1.3×10−3Ωcm). A UV-visible spectroscopy assessment showed that the MGZO thin films had high transmittance of more than 80% in the visibleregion and that the absorption edges of MGZO thin films were very sharp and shifted toward the higher wavelength side, from270nm to 340nm, with an increase in the sputtering power. The band-gap energy of MGZO thin films was widened from3.74eV to 3.92eV with the change in the sputtering power.

This experiment was carried out to determine the effect of different spectrum conversion greenhouse films (red, blue, red+blue) to changing microclimate and subsequent effect on growth and quality of lettuce (Lactuca sativa L.), tomato (Solanum lycopersicum L.), and melon (Cucumis melo L.) Transmission of PAR (photosynthetic active radiation, 400-700 nm) under red, blue, and blue+red (BR) films was higher by 7.2, 7.6, and 5.8%, respectively, as compared with control greenhouse film. Light transmission in the 300-1100 nm wave band was 91.6% and 91.3% under red and blue films, respectively, compared to 86.4% under control film. Mean daytime temperature in greenhouse was slightly higher in red and blue film and mean night time temperature was higher in BR film. There were no significant differences in relative humidity among the films. Number of leaves and plant fresh weight of lettuce were higher under BR film. Total number of marketable tomato fruits was greater under blue and BR film and fruit weight was heavier under red and blue film compared to control film. Under BR and red film melon fruit weight was increased by 140 g and 80 g respectively, as compared to control film. Sugar content in melon and tomato fruits was not affected by covering films.

The Cu2ZnSnS4 (CZTS) thin film solar cell is a candidate next generation thin film solar cell. For the application of an absorption layer in solar cells, CZTS thin films were deposited by pulsed laser deposition (PLD) at substrate temperature of 300˚C without post annealing process. Deposition time was carefully adjusted as the main experimental variable. Regardless of deposition time, single phase CZTS thin films are obtained with no existence of secondary phases. Irregularly-shaped grains are densely formed on the surface of CZTS thin films. With increasing deposition time, the grain size increases and the thickness of the CZTS thin films increases from 0.16 to 1μm. The variation of the surface morphology and thickness of the CZTS thin films depends on the deposition time. The stoichiometry of all CZTS thin films shows a Cu-rich and S-poor state. Sn content gradually increases as deposition time increases. Secondary ion mass spectrometry was carried out to evaluate the elemental depth distribution in CZTS thin films. The optimal deposition time to grow CZTS thin films is 150 min. In this study, we show the effect of deposition time on the structural properties of CZTS thin film deposited on soda lime glass (SLG) substrate using PLD. We present a comprehensive evaluation of CZTS thin films.

Today, there are a multitude of papers being written on films that deal with multicultural society. However, it is difficult to find research on German films that deal with multicultural societies from the educational perspective of cultural exchange. This paper chooses the following four German films and aims to examine them from that perspective – Doris Dörrie’s Kirschblüten, Fatih Akın’s Solino and Gegen die Wand, and Percy Adlon’s Bagdad Café. Kirschblüten is about longings for and communication with other cultures, Solino about cultural differences and ways to overcome them, Gegen die Wand about cultural conflicts and identities, and Bagdad Café about cultural connection and communication. What is of particular importance in handling these movies in the classroom will be to raise and discuss relevant pedagogical questions to encourage the students to contemplate the various aspects of cultural encounters as their own issue. Thus, the ultimate goal of the education should be the learning of the values of coexistence, harmony, and exchange that are required of any multicultural society.

In semiconductor manufacturing, the circuit integrity of packaged BGA devices is tested by measuring electrical resistance using test sockets. Test sockets have been reported to often fail earlier than the expected life-time due to high contact resistance. This has been attributed to the formation of Sn oxide films on the Au coating layer of the probe pins loaded on the socket. Similar to contact failure, and known as "fretting", this process widely occurs between two conductive surfaces due to the continual rupture and accumulation of oxide films. However, the failure mechanism at the probe pin differs from fretting. In this study, the microstructural processes and formation mechanisms of Sn oxide films developed on the probe pin surface were investigated. Failure analysis was conducted mainly by FIB-FESEM observations, along with EDX, AES, and XRD analyses. Soft and fresh Sn was found to be transferred repeatedly from the solder bump to the Au surface of the probe pins; it was then instantly oxidized to SnO. The SnO2 phase is a more stable natural oxide, but SnO has been proved to grow on Sn thin film at low temperature (< 150˚C). Further oxidation to SnO2 is thought to be limited to 30%. The SnO film grew layer by layer up to 571 nm after testing of 50,500 cycles (1 nm/100 cycle). This resulted in the increase of contact resistance and thus of signal delay between the probe pin and the solder bump.

ZnO thin films were grown on a sapphire substrate by RF magnetron sputtering. The characteristics of the thin films were investigated by ellipsometry, X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL), and Hall effect. The substrate temperature and growth time were kept constant at 200˚C at 30 minutes, respectively. The RF power was varied within the range of 200 to 500 W. ZnO thin films on sapphire substrate were grown with a preferred C-axis orientation along the (0002) plan; X-ray diffraction peak shifted to low angles and PL emission peak was red-shifted with increasing RF power. In addition, the electrical characteristics of the carrier density and mobility decreased and the resistivity increased. In the electrical and optical properties of ZnO thin films under variation of RF power, the crystallinity improved and the roughness increased with increasing RF power due to decreased oxygen vacancies and the presence of excess zinc above the optimal range of RF power. Consequently, the crystallinity of the ZnO thin films grown on sapphire substrate was improved with RF sputtering power; however, excess Zn resulted because of the structural, electrical, and optical properties of the ZnO thin films. Thus, excess RF power will act as a factor that degrades the device characteristics.

본 실험은 다양한 저장온도 조건에서 아위버섯에 적합한 MAP용 포장재 구명을 위해 수행하였다. 저장중 생체중 감소는 저장온도가 낮을수록 적었는데, 모든 온도 처리(1, 8, 24℃)에서 저장 종료일까지 1.5% 이하로 낮았다. 1저장에서는 산소투과율이 1,300cc/m2·day·atm 인 필름 처리구가 가장 큰 저장수명(42일)을 보였으며 저장중 포장내 산소/이산화탄소의 대기조성 조건도 가장 적합한 MA조건인 5%/15% 수준이었으나, 높은 에틸렌 농도와 이취를 보인 반면 3,000cc 처리구는 1,300cc 처리구와 비슷한 대기조성 조건을 갖추고 낮은 에틸렌 농도과 이취를 보였다. 따라서 1℃에서는 1,300cc와 3,000cc 필름이 적합하였다. 저장중 대기조성이 필름처리간 차이가 없었던 8℃ 저장에서는 에틸렌 농도가 두 번째로 낮았고 외관상 품질이 가장 높아 저장수명이 19일로 가장 길었던 3,000cc 필름이 적합하였다. 저장 온도가 높아 호흡이 급격히 빨라져 극도의 CA 조건이 만들어졌던 25℃에서는 외관상 품질에서 가장 양호하였던 1,300cc 필름으로 적합하였다. 또한 온도별 저장수명이 25℃에 비해 8℃는 4배, 1℃는 9배나 연장되어 수확 후 저온유통이 반드시 필요하다고 판단되었다.

Recently nanoscience and nanotechnology have been studied intensively, and many plants, insects, and animals in nature have been found to have nanostructures in their bodies. Among them, lotus leaves have a unique nanostructure and microstructure in combination and show superhydrophobicity and a self-cleaning function to wipe and clean impurities on their surfaces. Coating films with combined nanostructures and microstructures resembling those of lotus leaves may also have superhydrophobicity and self-cleaning functions; as a result, they could be used in various applications, such as in outfits, tents, building walls, or exterior surfaces of transportation vehicles like cars, ships, or airplanes. In this study, coating films were prepared by dip coating method using polypropylene polymers dissolved in a mixture of solvent, xylene and non-solvent, methylethylketon, and ethanol. Additionally, attempts were made to prepare nanostructures on top of microstructures by coating with the same coating solution with an addition of carbon nanotubes, or by applying a carbon nanotube over-coat on polymer coating films. Coating films prepared without carbon nanotubes were found to have superhydrophobicity, with a water contact angle of 152˚ and sliding angle less than 2˚. Coating films prepared with carbon nanotubes were also found to have a similar degree of superhydrophobicity, with a water contact angle of 150 degrees and a sliding angle of 3 degrees.

TiO2 thin films for high energy density capacitors were prepared by r.f. magnetron sputtering at room temperature.Flexible PET (Polyethylene terephtalate) substrate was used to maintain the structure of the commercial film capacitors. Theeffects of deposition pressure on the crystallization and electrical properties of TiO2 films were investigated. The crystal structureof TiO2 films deposited on PET substrate at room temperature was unrelated to deposition pressure and showed an amorphousstructure unlike that of films on Si substrate. The grain size and surface roughness of films decreased with increasing depositionpressure due to the difference of mean free path. X-ray photoelectron spectroscopy (XPS) analysis revealed the formation ofchemically stable TiO2 films. The dielectric constant of TiO2 films was significantly changed with deposition pressure. TiO2films deposited at low pressure showed high dissipation factor due to the surface microstructure. The dielectric constant anddissipation factor of films deposited at 70mTorr were found to be 100~120 and 0.83 at 1kHz, respectively. The temperaturedependence of the capacitance of TiO2 films showed the properties of class I ceramic capacitors. TiO2 films deposited at10~30mTorr showed dielectric breakdown at applied voltage of 7V. However, the films of 500~300nm thickness depositedat 50 and 70mTorr showed a leakage current of ~10−8~10−9 A at 100 V.

Nanocomposite films were made by a simple solution casting method in which multi-walled carbon nanotubes (MWCNT) and magnetite nanoparticles (Fe3O4) were used as dopant materials to enhance the electrical conductivity of chitosan nanocomposite films. The films contained fixed CNT concentrations (5, 8, and 10 wt%) and varying Fe3O4 content. It was determined that a 1:1 ratio of CNT to Fe3O4 provided optimal conductivity according to dopant material loading. X-ray diffraction patterns for the nanocomposite films, were determined to investigate their chemical and phase composition, revealed that nanoparticle agglomeration occurred at high Fe3O4 loadings, which hindered the synergistic effect of the doping materials on the conductivity of the films.

우리는 순환전압전류법에 의한 LB 필름에 대한 전기화학적 특성을 조사하였다. 인지질 화합물은 ITO glass에 Langmuir-Blodgett법을 사용하여 제막하였다. 0.5, 1.0, 1.5 및 2.0 N NaClO4 용액에서 3 전극 시스템 (Ag/AgCl 기준전극, 백금선 카운터 전극 및 LB 필름이 코팅된 ITO 작업전극)으로 순환전압전류법을 사용하여 전기화학적 측정을 시도하였다. 측정 범위는 연속적으로 1650 mV로 산화시키고, 초기전위인 -1350 mV로 환원시켰다. 그 결과, 인지질 화합물의 LB 필름은 순환전압전류도표로부터 오직 산화전류로 인한 비가역공정으로 나타났다. LB 필름의 확산계수(D) 효과는 인지질 화합물 양의 증가로 인하여 감소하였다.

We report plasma-assisted molecular beam epitaxy of InXGa1-XN films on c-plane sapphire substrates. Prior to thegrowth of InXGa1-XN films, GaN film was grown on the nitride c-plane sapphire substrate by two-dimensional (2D) growthmode. For the growth of GaN, Ga flux of 3.7×10−8 torr as a beam equivalent pressure (BEP) and a plasma power of 150W with a nitrogen flow rate of 0.76 sccm were fixed. The growth of 2D GaN growth was confirmed by in-situ reflection high-energy electron diffraction (RHEED) by observing a streaky RHEED pattern with a strong specular spot. InN films showedlower growth rates even with the same growth conditions (same growth temperature, same plasma condition, and same BEPvalue of III element) than those of GaN films. It was observed that the growth rate of GaN is 1.7 times higher than that ofInN, which is probably caused by the higher vapor pressure of In. For the growth of InxGa1-xN films with different Incompositions, total III-element flux (Ga plus In BEPs) was set to 3.7×10−8 torr, which was the BEP value for the 2D growthof GaN. The In compositions of the InxGa1-xN films were determined to be 28, 41, 45, and 53% based on the peak positionof (0002) reflection in x-ray θ-2θ measurements. The growth of InxGa1-xN films did not show a streaky RHEED pattern butshowed spotty patterns with weak streaky lines. This means that the net sticking coefficients of In and Ga, considered basedon the growth rates of GaN and InN, are not the only factor governing the growth mode; another factor such as migrationvelocity should be considered. The sample with an In composition of 41% showed the lowest full width at half maximum valueof 0.20 degree from the x-ray (0002) omega rocking curve measurements and the lowest root mean square roughness valueof 0.71nm.

We analyzed the effect of etchants for metal catalysts in terms of the characteristics of resulting graphene films, such as sheet resistance, hall mobility, transmittance, and carrier concentration. We found the residue of FeCl3 etchant degraded the sheet resistance and mobility of graphene films. The residue was identified as an iron oxide containing a small amount of Cl through elemental analysis using X-ray photoelectron spectroscopy. To remove this residue, we provide an alternative etching solution by introducing acidic etching solutions and their combinations (HNO3, HCl, FeCl3 + HCl, and FeCl3+HNO3). The combination of FeCl3 and acidic solutions (HCl and HNO3) resulted in more enhanced electrical properties than pure etchants, which is attributed to the elimination of left over etching residue, and a small amount of amorphous carbon debris after the etching process.

완전 생분해성 고분자 블렌드필름을 제조하기 위하여 치환도가 다른 두 셀룰로오스 아세테이트(CA)에 5 - 50%의 저분자량 폴리락타이드(PLA)를 블렌딩하였다. 이 때 사용된 각각의 고분자는 10% 메탄올/메틸렌클로라이드 혼합용제에 녹여서 점도가 같은 조건의 농도로 제조하였다. 각 조성의 블렌드필름의 표면 모폴로지와 열적 성질, 기계적 성질을 조사하였다. 화학적 구조는 적외선 분광법으로 확인하였으며, 전자현미경을 통한 표면 분석 결과 5% 이하의 폴리락타이드를 함유한 블렌드필름은 상분리가 거의 일어나지 않았으며 20% 이상이 함유된 경우 상분리가 매우 심각하였다. 또한 블렌드필름의 인장강도는 셀룰로오스 아세테이트의 함량이 늘어날수록 TAC/PLA의 경우 820kgf/cm2 및 DAC/PLA의 경우 600kgf/cm2까지 향상시킬 수 있었다.

In2O3 films were deposited by RF magnetron sputtering on a glass substrate and then the effect of post depositionannealing in nitrogen atmosphere on the structural, optical and electrical properties of the films was investigated. Afterdeposition, the annealing process was conducted for 30 minutes at 200 and 400oC. XRD pattern analysis showed that the asdeposited films were amorphous. When the annealing temperature reached 200-400oC, the intensities of the In2O3 (222) majorpeak increased and the full width at half maximum (FWHM) of the In2O3 (222) peak decreased due to the crystallization. Thefilms annealed at 400oC showed a grain size of 28nm, which was larger than that of the as deposited amorphous films. Theoptical transmittance in the visible wavelength region also increased, while the electrical sheet resistance decreased. In this study,the films annealed at 400oC showed the highest optical transmittance of 76% and also showed the lowest sheet resistance of89Ω/□. The figure of merit reached a maximum of 7.2×10−4Ω−1 for the films annealed at 400oC. The effect of the annealingon the work-function of In2O3 films was considered. The work-function obtained from annealed films at 400oC was 7.0eV. Thus,the annealed In2O3 films are an alternative to ITO films for use as transparent anodes in OLEDs.

The electrochromic properties of tungsten oxide films grown by RF sputtering were investigated. Among the sputter parameters, first the Ar:O2 ratios were controlled with division into only an O2 environment, 1:1 and 4:1. The structure of each film prepared by these conditions was studied by X-ray diffraction, X-ray photoelectron spectroscopy and Rutherford backscattering spectroscopy. The sputter-deposited tungsten oxide films had an amorphous structure regardless of the Ar:O2 ratios. The chemical compositions, however, were different from each other. The stoichiometric structure and low-density film was obtained at higher O2 contents. Electrochemical tests were performed by cyclic voltammetry and chronoamperometry at 0.05 M H2SO4 solutions. The current density and charge ratio was estimated during the continuous potential and pulse potential cycling at -0.5 V and 1.8 V, respectively. The film grown in a higher oxygen environment had a higher current density and a reversible charge reaction during intercalation and deintercalation. The in-situ transmittance tests were performed by He-Ne laser (633 nm). At higher oxygen contents, a big transmittance difference was observed but the response speed was too slow. This was likely caused by higher film resistivity. Furthermore, the effect of sputtering pressure was also investigated. The structure and surface morphology of each film was observed by X-ray diffraction and scanning electron microscopy. A rough surface was observed at higher sputtering pressure, and this affected the higher transmittance difference and coloration efficiency.

We report growth of epitaxial AlN thin films on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. To achieve two-dimensional growth the substrates were nitrided by nitrogen plasma prior to the AlN growth, which resulted in the formation of a two-dimensional single crystalline AlN layer. The formation of the two-dimensional AlN layer by the nitridation process was confirmed by the observation of streaky reflection high energy electron diffraction (RHEED) patterns. The growth of AlN thin films was performed on the nitrided AlN layer by changing the Al beam flux with the fixed nitrogen flux at 860˚C. The growth mode of AlN films was also affected by the beam flux. By increasing the Al beam flux, two-dimensional growth of AlN films was favored, and a very flat surface with a root mean square roughness of 0.196 nm (for the 2 μm × 2 μm area) was obtained. Interestingly, additional diffraction lines were observed for the two-dimensionally grown AlN films, which were probably caused by the Al adlayer, which was similar to a report of Ga adlayer in the two-dimensional growth of GaN. Al droplets were observed in the sample grown with a higher Al beam flux after cooling to room temperature, which resulted from the excessive Al flux.

We report the structural characterization of BixZn1-xO thin films grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. By increasing the Bi flux during the growth process, BixZn1-xO thin films with various Bi contents (x = 0~13.17 atomic %) were prepared. X-ray diffraction (XRD) measurements revealed the formation of Bi-oxide phase in (Bi)ZnO after increasing the Bi content. However, it was impossible to determine whether the formed Bi-oxide phase was the monoclinic structure α-Bi2O3 or the tetragonal structure β-Bi2O3 by means of XRD θ-2θ measurements, as the observed diffraction peaks of the 2θ value at ~28 were very close to reflection of the (012) plane for the monoclinic structure α-Bi2O3 at 28.064 and the reflection of the (201) plane for the tetragonal structure β-Bi2O3 at 27.946. By means of transmission electron microscopy (TEM) using a diffraction pattern analysis and a high-resolution lattice image, it was finally determined as the monoclinic structure α-Bi2O3 phase. To investigate the distribution of the Bi and Bi-oxide phases in BiZnO films, elemental mapping using energy dispersive spectroscopy equipped with TEM was performed. Considering both the XRD and the elemental mapping results, it was concluded that hexagonal-structure wurtzite BixZn1-xO thin films were grown at a low Bi content (x = ~2.37 atomic %) without the formation of α-Bi2O3. However, the increased Bi content (x = 4.63~13.17 atomic %) resulted in the formation of the α-Bi2O3 phase in the wurtzite (Bi)ZnO matrix.