In this study, two alignment methods were used to create a Fringe-Field Switching (FFS) mode liquid crystal device using an organic thin film (polyimide: PI) as an alignment layer. In addition, the electro-optical (EO) characteristics of the liquid crystal device manufactured in this way were investigated to evaluate the feasibility of mass production application of the technology. In general, the photo-alignment method using unpolarized ultraviolet rays can obtain a relatively low pretilt angle, so a liquid crystal device in FFS mode, which is a driving mode of the liquid crystal device that reflects the characteristics of liquid crystal alignment, was manufactured, and the liquid crystal has a high reactivity with the alignment film. Considering this, nematic liquid crystal (NLC) was used. In addition, in order to improve the misalignment, it was observed whether more stable orientation occurred by irradiating ultraviolet rays for an additional 1 to 3 hours in the aligned state. As a result of the experiment, it was found that NLC alignment occurs through a photodecomposition reaction caused by unpolarized UV irradiation oblique to the PI surface. In addition to the existing orientation method, UV irradiation was used to achieve a more stable orientation state and stable V-T curve and response characteristics. With liquid crystal alignment completed, more stable orientation characteristics and EO characteristics at the mass production level were obtained through additional UV irradiation for 3 hours. This method can further stabilize the orientation stability caused by existing UV irradiation through an additional process.

Fluorine-doped tin oxide (FTO) has been used as a representative transparent conductive oxide (TCO) in various optoelectronic applications, including light emitting diodes, solar cells, photo-detectors, and electrochromic devices. The FTO plays an important role in providing electron transfer between active layers and external circuits while maintaining high transmittance in the devices. Herein, we report the effects of substrate rotation speed on the electrical and optical properties of FTO films during ultrasonic spray pyrolysis deposition (USPD). The substrate rotation speeds were adjusted to 2, 6, 10, and 14 rpm. As the substrate rotation speed increased from 2 to 14 rpm, the FTO films exhibited different film morphologies, including crystallite size, surface roughness, crystal texture, and film thickness. This FTO film engineering can be attributed to the variable nucleation and growth behaviors of FTO crystallites according to substrate rotation speeds during USPD. Among the FTO films with different substrate rotation speeds, the FTO film fabricated at 6 rpm showed the best optimized TCO characteristics when considering both electrical (sheet resistance of 13.73 Ω/□) and optical (average transmittance of 86.76 % at 400~700 nm) properties with a figure of merit (0.018 Ω-1).

ZnO/Cu/ZnO (ZCZ) thin films were deposited at room temperature on a glass substrate using direct current (DC) and radio frequency (RF, 13.56 MHz) magnetron sputtering and then the effect of post-deposition electron irradiation on the structural, optical, electrical and transparent heater properties of the films were considered. ZCZ films that were electron beam irradiated at 500 eV showed an increase in the grain sizes of their ZnO(102) and (201) planes to 15.17 nm and 11.51 nm, respectively, from grain sizes of 13.50 nm and 10.60 nm observed in the as deposited films. In addition, the film’s optical and electrical properties also depended on the electron irradiation energies. The highest opto-electrical performance was observed in films electron irradiated at 500 eV. In a heat radiation test, when a bias voltage of 18 V was applied to the film that had been electron irradiated at 500 eV, its steady state temperature was about 90.5 °C. In a repetition test, it reached the steady state temperature within 60 s at all bias voltages.

Transparent conductive tungsten (W) doped indium oxide (In2O3; IWO) films were deposited at different substrate bias voltage (-Vb) conditions at room temperature on glass substrates by radio frequency (RF) magnetron sputtering and the influence of the substrate bias voltage on the optical and electrical properties was investigated. As the substrate bias voltage increased to -350 Vb, the IWO films showed a lower resistivity of 2.06 × 10-4 Ωcm. The lowest resistivity observed for the film deposited at -350 Vb could be attributed to its higher mobility, of 31.8 cm2/Vs compared with that (6.2 cm2/Vs) of the films deposited without a substrate bias voltage (0 Vb). The highest visible transmittance of 84.1 % was also observed for the films deposited at the -350 Vb condition. The X-ray diffraction observation indicated the IWO films deposited without substrate bias voltage were amorphous phase without any diffraction peaks, while the films deposited with bias voltage were polycrystalline with a low In2O3 (222) diffraction peak and relatively high intensity (431) and (046) diffraction peaks. From the observed visible transmittance and electrical properties, it is concluded that the opto-electrical performance of the polycrystalline IWO film deposited by RF magnetron sputtering can be enhanced with effective substrate bias voltage conditions.

AZO/Cu/AZO thin films were deposited on glass by RF magnetron sputtering. The specimens showed the preferred orientation of (0002) AZO and (111) Cu. The Cu crystal sizes increased from about 3.7 nm to about 8.5 nm with increasing Cu thickness, and from about 6.3 nm to about 9.5 nm with increasing heat treatment temperatures. The sizes of AZO crystals were almost independent of the Cu thickness, and increased slightly with heat treatment temperature. The residual stress of AZO after heat treatment also increased compressively from -4.6 GPa to -5.6 GPa with increasing heat treatment temperature. The increase in crystal size resulted from grain growth, and the increase in stress resulted from the decrease in defects that accompanied grain growth, and the thermal stress during cooling from heat treatment temperature to room temperature. From the PL spectra, the decrease in defects during heat treatment resulted in the increased intensity. The electrical resistivities of the 4 nm Cu film were 5.9 × 10-4 Ω ‧ cm and about 1.0 × 10-4 Ω ‧ cm for thicker Cu films. The resistivity decreased as the temperature of heat treatment increased. As the Cu thickness increased, an increase in carrier concentration resulted, as the fraction of AZO/Cu/AZO metal film increased. And the increase in carrier concentration with increasing heat treatment temperature might result from the diffusion of Cu ions into AZO. Transmittance decreased with increasing Cu thicknesses, and reached a maximum near the 500 nm wavelength after being heat treated at 200 °C.

Recently, as the demand for a non-contact liquid crystal alignment method capable of improving viewing angle characteristics has spread throughout the industry, various non-contact liquid crystal alignment methods, including conventional UV light alignment, are being actively studied. In the case of UV light alignment, it is currently applied to mass production in many fields and shows relatively excellent initial characteristics, but there is a problem of display quality deterioration over time. In this study, among these non-contact liquid crystal alignment methods, the liquid crystal is oriented by quantitatively irradiating an ion beam onto the SiOF inorganic film, which has excellent initial characteristics and does not cause deterioration in quality over time., the electro-optical properties were evaluated by manufacturing a commercial-level IPS (In-Plane Switching) liquid crystal cell. In particular, in the case of such inorganic film orientation, it is common to have many problems with orientation stability, but the evaluation cell manufactured by the method proposed in this study is capable of maintaining a uniform orientation without losing orientation even after heat treatment at a high temperature of 200°C. could be observed.

산업이 발달함에 따라 이산화탄소, 휘발성 유기 화합물, 일산화탄소 등과 같은 독성 가스의 감지 및 모니터링이 중요시되고 있다. 새롭게 합성된 0 차원의 비납계 무기 페로브스카이트 소재는 광학적 방법과 전기적 방법을 융합하여 사용할 수 있는 가스 센서 특성을 가진다. 친환경 가스 센서는 결정의 상변이를 기반으로, 광학 및 전기적 특성 변화를 가져 하이드록실기 감지가 가능하며, 하이드록실기 극성과의 상관관계를 통해 차세대 센서 소자로의 응용 가능성이 기대된다.

Zinc oxide (ZnO) based transparent conducting oxides (TCO) thin films, are used in many applications such as solar cells, flat panel displays, and LEDs due to their wide bandgap nature and excellent electrical properties. In the present work, fluorine and aluminium-doped ZnO targets are prepared and thin films are deposited on soda-lime glass substrate using a RF magnetron sputtering unit. The aluminium concentration is fixed at 2 wt%, and the fluorine concentration is adjusted between 0 to 2.0 wt% with five different concentrations, namely, Al2ZnO98(AZO), F0.5AZO97.5(FAZO1), F1AZO97(FAZO2), F1.5AZO96.5(FAZO3), and F2AZO96(FAZO4). Thin films are deposited with an RF power of 40 W and working pressure of 5 m Torr at 270 oC. The morphological analysis performed for the thin film reveals that surface roughness decreases in FAZO1 and FAZO2 samples when doped with a small amount of fluorine. Further, optical and electrical properties measured for FAZO1 sample show average optical transmissions of over 89 % in the visible region and 82.5 % in the infrared region, followed by low resistivity and sheet resistance of 3.59 × 10−4 Ωcm and 5.52 Ω/sq, respectively. In future, these thin films with excellent optoelectronic properties can be used for thin-film solar cell and other optoelectronics applications.

AZO thin films are grown on a p-Si(111) substrate by RF magnetron sputtering. The characteristics of various thicknesses and heat treatment conditions are investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Hall effect and room-temperature photoluminescence (PL) measurements. The substrate temperature and the RF power during growth are kept constant at 400 ℃ and 200 W, respectively. AZO films are grown with a preferred orientation along the c-axis. As the thickness and the heat treatment temperature increases, the length of the c-axis decreases as Al3+ ions of relatively small ion radius are substituted for Zn2+ ions. At room temperature, the PL spectrum is separated into an NBE emission peak around 3.2 eV and a violet regions peak around 2.95 eV with increasing thickness, and the PL emission peak of 300 nm is red-shifted with increasing annealing temperature. In the XPS measurement, the peak intensity of Al2p and Oll increases with increasing annealing temperature. The AZO thin film of 100 nm thickness shows values of 6.5 × 1019 cm−3 of carrier concentration, 8.4 cm−2/V·s of mobility and 1.2 × 10−2 Ω·cm electrical resistivity. As the thickness of the thin film increases, the carrier concentration and the mobility increase, resulting in the decrease of resistivity. With the carrier concentration, mobility decreases when the heat treatment temperature increases more than 500 ℃.

Amorphous In-Ga-Zn-O (a-IGZO) thin film transistors, because of their relatively low mobility, have limits in attempts to fulfill high-end specifications for display backplanes. In-Zn-O (IZO) is a promising semiconductor material for high mobility device applications with excellent transparency to visible light region and low temperature process capability. In this paper, the effects of working pressure on the physical and electrical properties of IZO films and thin film transistors are investigated. The working pressure is modulated from 2 mTorr to 5 mTorr, whereas the other process conditions are fixed. As the working pressure increases, the extracted optical band gap of IZO films gradually decreases. Absorption coefficient spectra indicate that subgap states increase at high working pressure. Furthermore, IZO film fabricated at low working pressure shows smoother surface morphology. As a result, IZO thin film transistors with optimum conditions exhibit excellent switching characteristics with high mobility (≥ 30cm2/Vs) and large on/off ratio.

The effects of fast neutron irradiation on the electrical and optical properties of Li (3 at%) doped ZnSnO (ZTO) thin films fabricated using a sol-gel process are investigated. From the results of Li-ZTO TFT characteristics according to change of neutron irradiation time, the saturation mobility is found to increase and threshold voltage values shift to a negative direction from 1,000 s neutron irradiation time. X-ray photoelectron spectroscopy analysis of the O 1s core level shows that the relative area of oxygen vacancies is almost unchanged with different irradiation times. From the results of band alignment, it is confirmed that, due to the increase of electron carrier concentration, the Fermi level (EF) of the sample irradiated for 1,000 s is located at the position closest to the conduction band minimum. The increase in electron concentration is considered by looking at the shallow band edge state under the conduction band edge formed by fast neutron irradiation of more than 1,000 s.

Three new asymmetric light emitting organic compounds were synthesized with diphenylamine or triphenylamine side groups; 10-(3,5-diphenylphenyl)-N,N-diphenylanthracen-9-amine (MADa), 4-(10-(3,5-diphenylphenyl)anthracen-9-yl)-N,N-diphenylaniline (MATa), and 4-(10-(30,50-diphenylbiphenyl-4-yl) anthracen-9-yl)-N,N-diphenylaniline (TATa). MATa and TATa had a PLmax at 463 nm in the blue region, and MADa had a PLmax at 498 nm. The EL efficiency and color coordinate values (respectively) were 10.3 cd/A and (0.199, 0.152; bluish-green) for the MADa device, 4.67 cd/A and (0.151, 0.177) for the MATa device, and 6.07 cd/A and (0.149, 0.177) for the TATa device. The TATa device had a high external quantum efficiency (EQE) of 6.19%, and its luminance and power efficiencies and life-time were more than twice those of the MADN device.

We synthesized new hole-transporting material, N,N'-diethyl-3,3'-bicarbazyl (E-Cvz-2), 9,9'-diethyl-6-(9-ethyl-carbazol-3-yl)-3,3'-bicarbazole (E-Cvz-3), 6-(9,9'-diethyl-3,3'-bicarbazol-6-yl)-9,9'-diethyl-3,3'-bicarbazole (E-Cvz-4A) and 9-ethyl-6-(9-ethyl-3,9'-bicarbazol-6-yl)-3,9'-bicarbazole (E-Cvz-4B). EL luminance efficiencies of E-Cvz-2, E-Cvz-3, E-Cvz-4A and E-Cvz-4B devices were found to be 4.77, 5.68, 4.27 and 4.64 cd/A, respectively, when synthesized materials are using as a HTL material. The luminance efficiency of E-Cvz-3 is 25% higher than that of NPB, a commercialized HTL material used as a reference in this study.

The effects of electron beam(EB) irradiation on the electrical and optical properties of InGaZnO(IGZO) thin films fabricated using a sol-gel process were investigated. As the EB dose increased, the electrical characteristic of the IGZO TFTs changed from semiconductor to conductor, and the threshold voltage values shifted to the negative direction. X-ray photoelectron spectroscopy analysis of the O 1s core level showed that the relative area of oxygen vacancies increased from 14.68 to 19.08 % as the EB dose increased from 0 to 1.5 × 1016 electrons/cm2. In addition, spectroscopic ellipsometer analysis showed that the optical band gap varied from 3.39 to 3.46 eV with increasing EB dose. From the result of band alignment, it was confirmed that the Fermi level(EF) of the sample irradiated with 1.5 × 1016 electrons/cm2 was located at the closest position to the conduction band minimum(CBM) due to the increase of electron carrier concentration

Sb-doped SnO2(ATO) thin films were prepared using electrospinning. To investigate the optimum properties of the electrospun ATO thin films, the deposition numbers of the ATO nanofibers(NFs) were controlled to levels of 1, 2, 4, and 6. Together with the different levels of deposition number, the structural, chemical, morphological, electrical, and optical properties of the nanofibers were investigated. As the deposition number of the ATO NFs increased, the thickness of the ATO thin films increased and the film surfaces were gradually densified, which affected the electrical properties of the ATO thin films. 6 levels of the ATO thin film exhibited superior electrical properties due to the improved carrier concentration and Hall mobility resulting from the increased thickness and surface densification. Also, the thickness of the samples had an effect on the optical properties of the ATO thin films. The ATO thin films with 6 deposited levels displayed the lowest transmittance and highest haze. Therefore, the figure of merit(FOM) considering the electrical and optical properties showed the best value for ATO thin films with 4 deposited levels.

Fluorine-doped SnO2 (FTO) thin film/Ag nanowire (NW) double layers were fabricated by means of spin coating and ultrasonic spray pyrolysis. To investigate the optimum thickness of the FTO thin films when used as protection layer for Ag NWs, the deposition time of the ultrasonic spray pyrolysis process was varied at 0, 1, 3, 5, or 10 min. The structural, chemical, morphological, electrical, and optical properties of the double layers were examined using X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, transmission electron microscopy, the Hall effect measurement system, and UV-Vis spectrophotometry. Although pure Ag NWs formed isolated droplet-shaped Ag particles at an annealing temperature of 300 oC, Ag NWs covered by FTO thin films maintained their high-aspect-ratio morphology. As the deposition time of the FTO thin films increased, the electrical and optical properties of the double layers degraded gradually. Therefore, the double layer fabricated with FTO thin films deposited for 1 min exhibited superb sheet resistance (~14.9Ω/□), high optical transmittance (~88.6 %), the best FOM (~19.9 × 10−3 Ω−1), and excellent thermal stability at an annealing temperature of 300 oC owing to the good morphology maintenance of the Ag NWs covered by FTO thin films.

A zinc oxide (ZnO) hybrid structure was successfully fabricated on a glass substrate by metal organic chemical vapor deposition (MOCVD). In-situ growth of a multi-dimensional ZnO hybrid structure was achieved by adjusting the growth temperature to determine the morphologies of either film or nanorods without any catalysts such as Au, Cu, Co, or Sn. The ZnO hybrid structure was composed of one-dimensional (1D) nanorods grown continuously on the two-dimensional (2D) ZnO film. The ZnO film of 2D mode was grown at a relatively low temperature, whereas the ZnO nanorods of 1D mode were grown at a higher temperature. The change of the morphologies of these materials led to improvements of the electrical and optical properties. The ZnO hybrid structure was characterized using various analytical tools. Scanning electron microscopy (SEM) was used to determine the surface morphology of the nanorods, which had grown well on the thin film. The structural characteristics of the polycrystalline ZnO hybrid grown on amorphous glass substrate were investigated by X-ray diffraction (XRD). Hall-effect measurement and a four-point probe were used to characterize the electrical properties. The hybrid structure was shown to be very effective at improving the electrical and the optical properties, decreasing the sheet resistance and the reflectance, and increasing the transmittance via refractive index (RI) engineering. The ZnO hybrid structure grown by MOCVD is very promising for opto-electronic devices as Photoconductive UV Detectors, anti-reflection coatings (ARC), and transparent conductive oxides (TCO).

Carbazole과 diketopyrrolopyrrole를 기본 골격으로 한 2,5-bis-(2-butyl-octyl)-3,6-bis-[5-(4-carbazol-9-ylphenyl)-thiophen-2-yl] -2,5-dihydro-pyrrolo[3,4-c]pyrrole-1,4-dione (PCTDPP12)을 스즈키 커플링 반응을 이용하여 합성하였다. UV-Visible 분광법으로 확인 한 결과 PCTDPP의 용액과 필름의 최대 흡수 피크는 각각 643 nm와 671 nm이며, PCTDPP12의 광학적 밴드갭은 각각 1.84 eV이다. 열처리에 의해 PCTDPP12의 UV-visible 흡광도 및 최대 흡수 파장이 변화된는 것을 관찰 하였다. 그리고 순환 전압 전류법에 의해 조사한 PCTDPP12의 HOMO 및 LUMO 에너지 준위는 –5.34 eV와 -3.54 eV 이다.

Solution-based Sb-doped SnO2 (ATO) transparent conductive oxides using a low-temperature process werefabricated by an electrospray technique followed by spin coating. We demonstrated their structural, chemical, morphological,electrical, and optical properties by means of X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanningelectron microscopy, atomic force microscopy, Hall effect measurement system, and UV-Vis spectrophotometry. In order toinvestigate optimum electrical and optical properties at low-temperature annealing, we systemically coated two layer, four layer,and six layers of ATO sol-solution using spin-coating on the electrosprayed ATO thin films. The resistivity and opticaltransmittance of the ATO thin films decreased as the thickness of ATO sol-layer increased. Then, the ATO thin films with twosol-layers exhibited superb figure of merit compared to the other samples. The performance improvement in a low temperatureprocess (300oC) can be explained by the effect of enhanced carrier concentration due to the improved densification of the ATOthin films causing the optimum sol-layer coating. Therefore, the solution-based ATO thin films prepared at 300oC exhibitedthe superb electrical (~7.25×10−3Ω·cm) and optical transmittance (~83.1%) performances.

최근 Fringe-Field Switching (FFS) 모드는 모든 고화질 액정디스플레이에 적용되고 있다. FFS 모드의 전기광학 특성은 전극 구조, 위상지연값, 러빙각, 셀갭, 액정의 유전율 이방성 (Δε) 크기 및 부호와 같은 셀 및 액정 변수에 따라 크게 의존한다. 본 연구에서는 FFS 모드에서 유전율 이방성의 부호가 다르지만 크기가 동일한 조건에서 FFS모드의 전기광학 특성을 연구하였다. 연구 결과에 의하면 전압 인가시 Δε 절대값이 같더라도 유전율 이방성이 음인 액정의 경우가 탄성변형이 용이해 유전율 이방성 양인 액정에 비해 구동 전압이 약 10% 정도 낮은 결과를 보여주었다. 이러한 결과는 FFS모드의 본질을 이해하는데 큰 도움을 준다고 확신한다.