본 연구는 압연공정에서 발생하는 폐수 중에 함유되어있는 난분해성 COD 물질을 80μm 두께의 극세사 형태로 제조된 Cu-Zn 금속합금의 산화 작용으로 인하여 발생하는 OH 라디칼을 이용하여 처리하는 방법에 관한 기초 연구이다. OH 라디칼은 유기화합물(RH) 속에 포함된 수소를 수소추출반응(H Abstraction) 또는 탄소와 탄소(C-C)의 불포화 결합에 첨가됨으로써 빠르고 비 선택적인 반응을 수행하는 것으로 알려진 것처럼 난 분해성 유기화합물의 처리에 효과적인 것으로 나타났다. 금속합금 반응 물질은 극세사 형태로 표면적이 넓어서 1회 처리만으로도 수용액의 pH를 평형에 도달하게 하여서 반응 효율성이 높은 것으로 나타났다. COD처리 효율은 중성 pH에 가까운 pH 7, pH 6에서 최고치를 보였으며 산성분위기인 pH 5이하 및 알칼리성 분위기인 pH 8이상에서는 낮은 효율을 보였다. 실제 압연 폐수의 응집 침전을 이용한 COD 처리에서도 redox 반응장치의 유무에 따라 2배 이상의 처리효율의 차이를 보였다.

Porous Al2O3 dispersed with nano-sized Cu was fabricated by freeze-drying process and solution chemistry method using Cu-nitrate. To prepare porous Al2O3, camphene was used as the sublimable vehicle. Camphene slurries with Al2O3 content of 10 vol% were prepared by milling at 50˚C with a small amount of oligomeric polyester dispersant. Freezing of the slurry was done in a Teflon cylinder attached to a copper bottom plate cooled to -25˚C while unidirectionally controlling the growth direction of the camphene. Pores were subsequently generated by sublimation of the camphene during drying in air for 48 h. The green body was sintered in a furnace at 1400˚C for 1 h. Cu particles were dispersed in porous Al2O3 by calcination and hydrogen reduction of Cu-nitrate. The sintered samples showed large pores with sizes of about 150μm; these pores were aligned parallel to the camphene growth direction. Also, the internal walls of the large pores had relatively small pores due to the traces of camphene left between the concentrated Al2O3 particles on the internal wall. EDS analysis revealed that the Cu particles were mainly dispersed on the surfaces of the large pores. These results strongly suggest that porous Al2O3 with Cu dispersion can be successfully fabricated by freeze-drying and solution chemistry routes.

The Cu2ZnSnS4 (CZTS) thin film solar cell is a candidate next generation thin film solar cell. For the application of an absorption layer in solar cells, CZTS thin films were deposited by pulsed laser deposition (PLD) at substrate temperature of 300˚C without post annealing process. Deposition time was carefully adjusted as the main experimental variable. Regardless of deposition time, single phase CZTS thin films are obtained with no existence of secondary phases. Irregularly-shaped grains are densely formed on the surface of CZTS thin films. With increasing deposition time, the grain size increases and the thickness of the CZTS thin films increases from 0.16 to 1μm. The variation of the surface morphology and thickness of the CZTS thin films depends on the deposition time. The stoichiometry of all CZTS thin films shows a Cu-rich and S-poor state. Sn content gradually increases as deposition time increases. Secondary ion mass spectrometry was carried out to evaluate the elemental depth distribution in CZTS thin films. The optimal deposition time to grow CZTS thin films is 150 min. In this study, we show the effect of deposition time on the structural properties of CZTS thin film deposited on soda lime glass (SLG) substrate using PLD. We present a comprehensive evaluation of CZTS thin films.

Large single grain Gd1.5Ba2Cu3O7-y (Gd1.5) bulk superconductors were fabricated by a top-seeded melt growth (TSMG) process using an NdBa2Cu3O7-y seed. The seeded Gd1.5 powder compacts with a diameter of 50 mm were subjected to the heating cycles of a TSMG process. After the TSMG process, the diameter of the single grain Gd1.5 compact was reduced to 43 mm owing to the volume contraction during the heat treatment. The superconducting transition temperature (Tc) of the top surface of the single grain Gd1.5 sample was as high as 93.5 K. The critical current densities (Jcs) at 77 K and 1T and 1.5 T were in ranges of 25,200-43,900 A/cm2 and 10,000-23,000 A/cm2, respectively. The maximum attractive force at 77 K of the sample field-cooled using an Nd-B-Fe permanent magnet (surface magnetic field of 0. 527 T) was 108.3 N; the maximum repulsive force of the zero field-cooled sample was 262 N. The magnetic flux density of the sample field-cooled at 77 K was 0.311T, which is approximately 85% of the applied magnetic field of 0.375 T. Microstructure investigation showed that many Gd2BaCuO5 (Gd211) particles of a few μm in size, which are flux pinning sites of Gd123, were trapped within the GdBa2Cu3O7-y (Gd123) grain; unreacted Ba3Cu5O8 liquid and Gd211 particles were present near the edge regions of the single grain Gd1.5 bulk compact.

Recently, the demand for the miniaturization of package substrates has been increasing. Technical innovation has occurred to move package substrate manufacturing steps into CMP applications. Electroplated copper filled trenches on the substrate need to be planarized for multi-level wires of less than 10μm. This paper introduces a chemical mechanical planarization (CMP) process as a new package substrate manufacturing step. The purpose of this study is to investigate the effect of surfactant on the dishing and erosion of Cu patterns with the lines and spaces of around 10/10μm used for advanced package substrates. The use of a conventional Cu slurry without surfactant led to problems, including severe erosion of 0.58μm in Cu patterns smaller than 4/6μm and deep dishing of 4.2μm in Cu patterns larger than 14/16μm. However, experimental results showed that the friction force during Cu CMP changed to lower value, and that dishing and erosion became smaller simultaneously as the surfactant concentration became higher. Finally, it was possible to realize more globally planarized Cu patterns with erosion ranges of 0.22μm to 0.35μm and dishing ranges of 0.37μm to 0.69μm by using 3 wt% concentration of surfactant.

Single crystalline Cu nanowires with controlled diameters and aspect ratios have been synthesized using electrochemical deposition within confined nanochannels of a porous anodic aluminium oxide(AAO) template. The diameters of nano-sized cylindrical pores in AAO template were adjusted by controlling the anodization conditions. Cu nanowires with diameters of approximately 38, 99, 274 nm were synthesized by the electrodeposition using the AAO templates. The crystal structure, morphology and microstructure of the Cu nanowires were systematically investigated using XRD, FE-SEM, TEM and SAED. Investigation results revealed that the Cu nanowires had the controlled diameter, high aspect ratio and single crystalline nature.

We investigated cleaning effects using NH4OH solution on the surface of Cu film. A 20 nm Cu film was deposited on Ti / p-Si (100) by sputter deposition and was exposed to air for growth of the native Cu oxide. In order to remove the Cu native oxide, an NH4OH cleaning process with and without TS-40A pre-treatment was carried out. After the NH4OH cleaning without TS-40A pretreatment, the sheet resistance Rs of the Cu film and the surface morphology changed slightly(δRs:~10mΩ/sq.). On the other hand, after NH4OH cleaning with TS-40A pretreatment, the Rs of the Cu film changed abruptly (δRs:till~700mΩ/sq.); in addition, cracks showed on the surface of the Cu film. According to XPS results, Si ingredient was detected on the surface of all Cu films pretreated with TS-40A. This Si ingredient(a kind of silicate) may result from the TS-40A solution, because sodium metasilicate is included in TS-40A as an alkaline degreasing agent. Finally, we found that the NH4OH cleaning process without pretreatment using an alkaline cleanser containing a silicate ingredient is more useful at removing Cu oxides on Cu film. In addition, we found that in the NH4OH cleaning process, an alkaline cleanser like Metex TS-40A, containing sodium metasilicate, can cause cracks on the surface of Cu film.

In this study, Cu-5Ni-10Sn(wt%) spinodal alloy was manufactured by gas atomization spray forming, and the microstructural features and mechanical properties of Cu-5Ni-10Sn alloy have been investigated during homogenization, cold working and age-hardening. The spray formed Cu-5Ni-10Sn alloy consisted of an equiaxed microstructure with a mixture of solid solution -(CuNiSn) grains and lamellar-structure grains. Homogenization at and subsequent rapid quenching formed a uniform solid solution -(CuNiSn) phase. Direct aging at from the homogenized Cu-5Ni-10Sn alloy promoted the precipitation of finely distributed ' or phase throughout the matrix, resulting in a significant increase in microhardness and tensile strength. Cold working prior to aging was effective in strengthening Cu-5Ni-10Sn alloy, which gave rise to a maximum tensile strength of 1165 MPa. Subsequent aging treatment slightly reduced the tensile strength to 1000-1100 MPa due to annealing effects.

In this study, we mainly focus on the study of densification of gas-atomized Cu-50 wt.%In-13 wt.%Ga alloy powder without occurrence of crack during the forming process. Cu-50 wt.%In-13 wt.%Ga alloy powder was consolidated by sintering and rolling processes in order to obtain high density. The phase and microstructure of formed materials were examined by X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical microscopy (OM), respectively. Warm rolling using copper can result in the improvement of density. The specimen obtained with 80% of rolling reduction ratio at using cooper can have the highest density of .

Effect of Cu and powder mixing with Cu-free (Nd, Dy)-Fe-B jet-milled powder on the magnetic properties of sintered magnets was investigated. The coercivity of a magnet prepared from the Cu-free (Nd, Dy)-Fe-B powder was about 10 kOe even though the alloy powder already contained some Dy (3.5 wt%). When small copper powder was blended, however, the coercivity of the magnet increased almost 100%, exhibiting about 20 kOe. On the contrary, the coercivity enhancement was moderate, about 4 kOe, when dysprosium content in the sintered magnet was simply increased to 4.9 wt% by the addition of small 3 powder.

Two types of nanoclusters, termed Cluster (1) and Cluster (2) here, both play an important role in the age-hardening behavior in Al-Mg-Si alloys. Small amounts of additions of Cu and Ag affect the formation of nanoclusters. Two exothermic peaks were clearly detected in differential scanning calorimetry(DSC) curves by means of peak separation by the Gaussian method in the base, Cu-added, Ag-added and Cu-Ag-added Al-Mg-Si alloys. The formation of nanoclusters in the initial stage of natural aging was suppressed in the Ag-added and Cu-Ag-added alloys, while the formation of nanoclusters was enhanced at an aging time longer than 259.2 ks(3 days) of natural aging with the addition Cu and Ag. The formation of nanoclusters while aging at 100˚C was accelerated in the Cu-added, Ag-added and Cu-Ag-added alloys due to the attractive interaction between the Cu and Ag atoms and the Mg atoms. The influence of additions of Cu and Ag on the clustering behavior during low-temperature aging was well characterized based on the interaction energies among solute atoms and on vacancies derived from the first-principle calculation of the full-potential Korrinaga-Kohn-Rostoker(FPKKR)-Green function method. The effects of low Cu and Ag additions on the formation of nanoclusters were also discussed based on the age-hardening phenomena.

넙치(Paralichthys olivaceus) 수정란의 부화율에 대한 중금속(Cd, Cu, Zn)의 급성독성을 조사하였다. Cd, Cu 및 Zn (0, 10, 100, 500, 1000, 2500, 5000 ppb)에 수정란을 48h 노출시킨 후, 정상 부화율을 백분율로 나타내었다. Cd, Cu 및 Zn을 포함하지 않는 대조구에서는 정상 부화율이 80% 이상을 나타냈으나, 중금속 농도가 증가할수록 정상 부화율은 급격히 감소하였다. 정상 부화율은 Cd, Cu 및 Zn에 대해 농도 의존적으로 감소하였으며, 각각 1000, 100, 100 ppb 이상의 농도에서 유의적이 차이를 나타내었다. P. olivaceus의 정상 부화율에 대한 Cd, Cu 및 Zn의 반수영향농도(EC50)를 이용한 독성은 Zn¤Cu¤Cd 순으로 강한 것으로 나타났으며, 이들 중금속에 대한 EC50는 각각 584, 1015, 1282 ppb를 나타내었다. Cd에 대한 NOEC는 500 ppb를 나타냈고 LOEC는 500 ppb를 나타내었다. Cu와 Zn의 NOEC와 LOEC 각각 100 ppb와 500 ppb로 유사한 값을 나타내었다. NOEC와 LOEC 결과로부터 자연생태계 내에서 Cu와 Zn 농도는 100 ppb, Cd 농도는 500 ppb를 초과할 경우 P. olivaceus 수정란의 정상 부화율은 감소할 것으로 판단된다. 본 연구결과를 바탕으로, P. olivaceus의 정상 부화율을 이용한 생물학적 시험은 중금속과 같은 유해물질에 대한 해양생태계의 영향을 판단하기 위한 시험방법으로 유용하게 이용될 수 있을 것으로 판단된다.

In this work, powder metallurgy and severe plastic deformation by high-pressure torsion (HPT) approaches were combined to achieve both full density and grain refinement at the same time. Pure Cu powders were mixed with 5 and 10 vol% diamonds and consolidated into disc-shaped samples at room temperature by HPT at 1.25 GPa and 1 turn, resulting in ultrafine grained metallic matrices embedded with diamonds. Neither heating nor additional sintering was required with the HPT process so that in situ consolidation was successfully achieved at ambient temperature. Significantly refined grain structures of Cu metallic matrices with increasing diamond volume fractions were observed by electron backscatter diffraction (EBSD), which enhanced the microhardness of the Cu-diamond composites.

Chalcogenide-based semiconductors, such as CuInSe2, CuGaSe2, Cu(In,Ga)Se2 (CIGS), and CdTe have attracted considerable interest as efficient materials in thin film solar cells (TFSCs). Currently, CIGS and CdTe TFSCs have demonstrated the highest power conversion efficiency (PCE) of over 11% in module production. However, commercialized CIGS and CdTe TFSCs have some limitations due to the scarcity of In, Ga, and Te and the environmental issues associated with Cd and Se. Recently, kesterite CZTS, which is one of the In- and Ga- free absorber materials, has been attracted considerable attention as a new candidate for use as an absorber material in thin film solar cells. The CZTS-based absorber material has outstanding characteristics such as band gap energy of 1.0 eV to 1.5 eV, high absorption coefficient on the order of 104cm-1, and high theoretical conversion efficiency of 32.2% in thin film solar cells. Despite these promising characteristics, research into CZTS-based thin film solar cells is still incomprehensive and related reports are quite few compared to those for CIGS thin film solar cells, which show high efficiency of over 20%. The recent development of kesterite-based CZTS thin film solar cells is summarized in this work. The new challenges for enhanced performance in CZTS thin films are examined and prospective issues are addressed as well.

This study attempted to manufacture a Cu-15 at.%Ga coating layer via the cold spray process and investigated the effect of heat treatment environment on the properties of cold sprayed coating material. Three kinds of heat treatment environments, +argon, pure argon, and vacuum were used in this study. Annealing treatments were conducted at /1 hr. With the cold sprayed coating layer, pure -Cu and small amounts of were detected in the XRD, EDS, EPMA analyses. Porosity significantly decreased and hardness also decreased with increasing annealing temperature. The inhomogeneous dendritic microstructure of cold sprayed coating material changed to the homogeneous and dense one (microstructural evolution) with annealing heat treatment. Oxides near the interface of particles could be reduced by heat treatment especially in vacuum and argon environments. Vacuum environment during heat treatment was suggested to be most effective one to improve the densification and purification properties of cold sprayed Cu-15 at.%Ga coating material.

Ag spot-coated Cu nanopowders were synthesized by a hydrothermal-attachment method (HA) using oleic acid capped Ag hydrosol. Cu nano powders were synthesized by pulsed wire exploding method using 0.4 mm in diameter of Cu wire (purity 99.9%). Synthesized Cu nano powders are seen with comparatively spherical shape having range in 50 nm to 150 nm in diameter. The oleic acid capped Ag hydrosol was synthesized by the precipitation-redispersion method. Oleic acid capped Ag nano particles showed the narrow size distribution and their particle size were less than 20 nm in diameter. In the case of nano Ag-spot coated Cu powders, nanosized Ag particles were adhered in the copper surface by HAA method. The components of C, O and Ag were distributed on the surface of copper powder.

Studies on lead-free piezoelectrics have been attractive as means of meeting environmental requirements. We synthesized lead-free piezoelectric (Bi1/2Na1/2)TiO3-Ba(Cu1/3Nb2/3)O3 (BNT-BCN) ceramics, and their dielectric, piezoelectric, and strain behavior were characterized. As BCN with a tetragonal phase was incorporated into the rhombohedral BNT lattice, the lattice constant increased. A small amount of BCN increased the density and dielectric constant forming the complete solid solution with BNT. However, BCN above 10 mol% was precipitated into a separate phase, and which was detected with XRD. In addition, EDX measurement revealed that Cu in BCN was not distributed homogeneously but was accumulated in a certain area. A lower density with a large amount of BCN was attributed to the nonsinterable property of BCN with large tetragonaliy. The dielectric constant vs the temperature change and the strain vs the electric field indicated that the ferroelectric property of BNT was diminished and paraelectric behavior was enhanced with the BCN addition. BNT-7.5BCN showed a 0.11% unimorph strain with a 9.0 kV/mm electric field with little hysteresis.

A high-quality CIGS film with a selenization process needs to be developed for low-cost and large-scale production. In this study, we used Cu2In3, CuGa and Cu2Se sputter targets for the deposition of a precursor. The precursor deposited by sputtering was selenized in Se vapor. The precursor layer deposited by the co-sputtering of Cu2In3, CuGa and Cu2Se showed a uniform distribution of Cu, In, Ga, and Se throughout the layer with Cu, In, CuIn, CuGa and Cu2Se phases. After selenization at 550˚C for 30 min, the CIGS film showed a double-layer microstructure with a large-grained top layer and a small-grained bottom layer. In the AES depth profile, In was found to have accumulated near the surface while Cu had accumulated in the middle of the CIGS film. By adding a Cu-In-Ga interlayer between the co-sputtered precursor layer and the Mo film and adding a thin Cu2Se layer onto the co-sputtered precursor layer, large CIGS grains throughout the film were produced. However, the Cu accumulated in the middle of CIGS film in this case as well. By supplying In, Ga and Se to the CIGS film, a uniform distribution of Cu, In, Ga and Se was achieved in the middle of the CIGS film.

Cu(In, Ga)Se2 (CIGS) precursor films were electrodeposited on Mo/glass substrates in acidic solutions containingCu2+, In3+, Ga3+, and Se4+ ions at −0.6V (SCE) and pH 1.8. In order to induce recrystallization, the electrodepositedCu1.00In0.81Ga0.09Se2.08 (25.0at.% Cu+20.2at.% In+2.2at.% Ga+52.0at.% Se) precursor films were annealed under a highSe gas atmosphere for 15, 30, 45, and 60 min, respectively, at 500oC. The Se amount in the film increased from 52at.% to62at.%, whereas the In amount in the film decreased from 20.8at.% to 9.1at.% as the annealing time increased from 0 (as-deposited state) to 60 min. These results were attributed to the Se introduced from the furnace atmosphere and reacted withthe In present in the precursor films, resulting in the formation of the volatile In2Se. CIGS precursor grains with a cauliflowershape grew as larger grains with the CuSe2 and/or Cu2-xSe faceted phases as the annealing times increased. These faceted phasesresulted in rough surface morphologies of the CIGS films. Furthermore, the CIGS layers were not dense because the emptyspaces between the grains were not removed via annealing. Uniform thicknesses of the MoSe2 layers occurred at the 45 and60 min annealing time. This implies that there was a stable reaction between the Mo back electrode and the Se diffused throughthe CIGS film. The results obtained in the present research were sufficiently different from comparable studies where therecrystallization annealing was performed under an atmosphere of Ar gas only or a low Se gas pressure.