Silicon carbide (SiC) has emerged as a promising material for next-generation power semiconductor materials, due to its high thermal conductivity and high critical electric field (~3 MV/cm) with a wide bandgap of 3.3 eV. This permits SiC devices to operate at lower on-resistance and higher breakdown voltage. However, to improve device performance, advanced research is still needed to reduce point defects in the SiC epitaxial layer. This work investigated the electrical characteristics and defect properties using DLTS analysis. Four deep level defects generated by the implantation process and during epitaxial layer growth were detected. Trap parameters such as energy level, capture-cross section, trap density were obtained from an Arrhenius plot. To investigate the impact of defects on the device, a 2D TCAD simulation was conducted using the same device structure, and the extracted defect parameters were added to confirm electrical characteristics. The degradation of device performance such as an increase in on-resistance by adding trap parameters was confirmed.

Fluorine-doped tin oxide (FTO) has been used as a representative transparent conductive oxide (TCO) in various optoelectronic applications, including light emitting diodes, solar cells, photo-detectors, and electrochromic devices. The FTO plays an important role in providing electron transfer between active layers and external circuits while maintaining high transmittance in the devices. Herein, we report the effects of substrate rotation speed on the electrical and optical properties of FTO films during ultrasonic spray pyrolysis deposition (USPD). The substrate rotation speeds were adjusted to 2, 6, 10, and 14 rpm. As the substrate rotation speed increased from 2 to 14 rpm, the FTO films exhibited different film morphologies, including crystallite size, surface roughness, crystal texture, and film thickness. This FTO film engineering can be attributed to the variable nucleation and growth behaviors of FTO crystallites according to substrate rotation speeds during USPD. Among the FTO films with different substrate rotation speeds, the FTO film fabricated at 6 rpm showed the best optimized TCO characteristics when considering both electrical (sheet resistance of 13.73 Ω/□) and optical (average transmittance of 86.76 % at 400~700 nm) properties with a figure of merit (0.018 Ω-1).

Transparent conductive tungsten (W) doped indium oxide (In2O3; IWO) films were deposited at different substrate bias voltage (-Vb) conditions at room temperature on glass substrates by radio frequency (RF) magnetron sputtering and the influence of the substrate bias voltage on the optical and electrical properties was investigated. As the substrate bias voltage increased to -350 Vb, the IWO films showed a lower resistivity of 2.06 × 10-4 Ωcm. The lowest resistivity observed for the film deposited at -350 Vb could be attributed to its higher mobility, of 31.8 cm2/Vs compared with that (6.2 cm2/Vs) of the films deposited without a substrate bias voltage (0 Vb). The highest visible transmittance of 84.1 % was also observed for the films deposited at the -350 Vb condition. The X-ray diffraction observation indicated the IWO films deposited without substrate bias voltage were amorphous phase without any diffraction peaks, while the films deposited with bias voltage were polycrystalline with a low In2O3 (222) diffraction peak and relatively high intensity (431) and (046) diffraction peaks. From the observed visible transmittance and electrical properties, it is concluded that the opto-electrical performance of the polycrystalline IWO film deposited by RF magnetron sputtering can be enhanced with effective substrate bias voltage conditions.

The Ag/WC electrical contacts were prepared via powder metallurgy using 60 wt% Ag, 40 wt% WC, and small amounts of Co3O4 with varying WC particle sizes. After the fabrication of the contact materials, microstructure observations confirmed that WC-1 had an average grain size (AGS) of 0.27 μm, and WC-2 had an AGS of 0.35 μm. The Ag matrix in WC-1 formed fine grains, whereas a significantly larger and continuous growth of the Ag matrix was observed in WC-2. This indicates the different flow behaviors of liquid Ag during the sintering process owing to the different WC sizes. The electrical conductivities of WC-1 and WC-2 were 47.8% and 60.4%, respectively, and had a significant influence on the Ag matrix. In particular, WC-2 exhibited extremely high electrical conductivity owing to its large and continuous Ag-grain matrix. The yield strengths of WC-1 and WC-2 after compression tests were 349.9 MPa and 280.7 MPa, respectively. The high yield strength of WC-1 can be attributed to the Hall–Petch effect, whereas the low yield strength of WC-2 can be explained by the high fraction of high-angle boundaries (HAB) between the WC grains. Furthermore, the relationships between the microstructure, electrical/mechanical properties, and deformation mechanisms were evaluated.

AZO/Cu/AZO thin films were deposited on glass by RF magnetron sputtering. The specimens showed the preferred orientation of (0002) AZO and (111) Cu. The Cu crystal sizes increased from about 3.7 nm to about 8.5 nm with increasing Cu thickness, and from about 6.3 nm to about 9.5 nm with increasing heat treatment temperatures. The sizes of AZO crystals were almost independent of the Cu thickness, and increased slightly with heat treatment temperature. The residual stress of AZO after heat treatment also increased compressively from -4.6 GPa to -5.6 GPa with increasing heat treatment temperature. The increase in crystal size resulted from grain growth, and the increase in stress resulted from the decrease in defects that accompanied grain growth, and the thermal stress during cooling from heat treatment temperature to room temperature. From the PL spectra, the decrease in defects during heat treatment resulted in the increased intensity. The electrical resistivities of the 4 nm Cu film were 5.9 × 10-4 Ω ‧ cm and about 1.0 × 10-4 Ω ‧ cm for thicker Cu films. The resistivity decreased as the temperature of heat treatment increased. As the Cu thickness increased, an increase in carrier concentration resulted, as the fraction of AZO/Cu/AZO metal film increased. And the increase in carrier concentration with increasing heat treatment temperature might result from the diffusion of Cu ions into AZO. Transmittance decreased with increasing Cu thicknesses, and reached a maximum near the 500 nm wavelength after being heat treated at 200 °C.

In this study, a graphite block is fabricated using artificial graphite processing byproduct and phenolic resin as raw materials. Mechanical and electrical property changes are confirmed due to the preforming method. After fabricating preforms at 50, 100, and 150 MPa, CIP molding at 150 MPa is followed by heat treatment to prepare a graphite block. 150UP-CIP shows a 12.9% reduction in porosity compared with the 150 MPa preform. As the porosity is decreased, the bulk density, flexural strength, and shore hardness are increased by 14.9%, 102.4%, and 13.7%, respectively; and the deviation of density and electrical resistivity are decreased by 51.9% and 34.1%, respectively. Therefore, as the preforming pressure increases, the porosity decreases, and the electrical and mechanical properties improve.

The electromembrane process, which has advantages such as scalability, sustainability, and eco-friendliness, is used in renewable energy fields such as fuel cells and reverse electrodialysis power generation. Most of the research to visualize the internal flow in the electromembrane process has mainly been conducted on heterogeneous ion exchange membranes, because of the non-uniform swelling characteristics of the homogeneous membrane. In this study, we successfully visualize the electroconvective vortices near the Nafion homogeneous membrane in PDMS-based microfluidic devices. To reinforce the mechanical rigidity and minimize the non-uniform swelling characteristics of the homogeneous membrane, a newly developed swelling supporter was additionally adapted to the Nafion membrane. Thus, a clear image of electroconvective vortices near the Nafion membrane could be obtained and visualized. As a result, we observed that the heterogeneous membrane has relatively stronger electroconvective vortices compared to the Nafion homogeneous membranes. Regarding electrical response, the Nafion membrane has a higher limiting current and less overlimiting current compared to the heterogeneous membrane. Based on our visualization, it is assumed that the heterogeneous membrane has more activated electroconvective vortices, which lower electrical resistance in the overlimiting current regime. We anticipate that this work can contribute to the fundamental understanding of the ion transport characteristics depending on the homogeneity of ion exchange membranes.

A spin coating process for RRAM, which is a TiN/TiO2/FTO structure based on a PTC sol solution, was developed in this laboratory, a method which enables low-temperature and eco-friendly manufacturing. The RRAM corresponds to an OxRAM that operates through the formation and extinction of conductive filaments. Heat treatment was selected as a method of controlling oxygen vacancy (VO), a major factor of the conductive filament. It was carried out at 100 oC under moisture removal conditions and at 300 oC and 500 oC for excellent phase stability. XRD analysis confirmed the anatase phase in the thin film increased as the heat treatment increased, and the Ti3+ and OH- groups were observed to decrease in the XPS analysis. In the I-V analysis, the device at 100 oC showed a low primary SET voltage of 5.1 V and a high ON/OFF ratio of 104. The double-logarithmic plot of the I-V curve confirmed the device at 100 oC required a low operating voltage. As a result, the 100 oC heat treatment conditions were suitable for the low voltage driving and high ON/OFF ratio of TiN/TiO2/FTO RRAM devices and these results suggest that the operating voltage and ON/OFF ratio required for OxRAM devices used in various fields under specific heat treatment conditions can be compromised.

This study examines the surface characteristics, electrical conductivity, electromagnetic wave blocking characteristics, infrared (IR) transmittance, stealth function, thermal characteristics, and moisture characteristics of IR thermal imaging cameras. Nylon film (NFi), nylon fabric (NFa), and 5 types of nylon mesh were selected as the base materials for aluminum sputtering, and aluminum sputtering was performed to study IR thermal imaging, color difference, temperature change, and so on, and the relationship with infrared transmittance was assessed. The electrical conductivity was measured and the aluminum-sputtered nylon film demonstrated 25.6kΩ of surface resistance and high electrical conductivity. In addition, the electromagnetic wave shielding characteristics of the sputtering-treated nylon film samples were noticeably increased as a result of aluminum sputtering treatment as measured by the electromagnetic wave blocking characteristics. When NFi and NFa samples with single-sided sputtering were placed on the human body (sputtering layer faced the outside air) and imaged using IR thermographic cameras, the sputtering layer displayed a color similar to the surroundings, showing a stealth effect. Moreover, the tighter the sample density, the better the stealth function. According to the L, a, b measurements, when the sputtering layer of NFi and NFa samples faced the outside air, the value of a was generally high, thereby demonstrating a concealing effect, and the E value was also high at 124.2 and 93.9, revealing a significant difference between the treated and untreated samples. This research may be applicable to various fields, such as the military wear, conductive sensors, electromagnetic wave shielding film, and others.

Ti3C2Tx MXene, which is a representative of the two-dimensional MXene family, is attracting considerable attention due to its remarkable physicochemical and mechanical properties. Despite its strengths, however, it is known to be vulnerable to oxidation. Many researchers have investigated the oxidation behaviors of the material, but most researches were conducted at high temperatures above 500 oC in an oxidation-retarding environment. In this research, we studied changes in the structural and electrical properties of Ti3C2Tx MXene induced by low-temperature heat treatments in ambient conditions. It was found that a number of TiO2 particles were formed on the MXene surface when it was mildly heated to 200 oC. Heating the material to higher temperatures, up to 400 oC, the phase transformation of Ti3C2Tx MXene to TiO2 was accelerated, resulting in a TiO2/ Ti3C2Tx hybrid. Consequently, the metallic nature of pure Ti3C2Tx MXene was transformed to semiconductive behavior upon heat-treating at ≥ 200 oC. The results of this research clearly demonstrate that Ti3C2Tx MXene may be easily oxidized even at low temperatures once it is exposed to air.

Molybdenum is used in electrical contacts, industrial motors, and transportation materials due to its remarkable ability to resist heat and corrosion. It is also used to flame coat other metals. This study investigated, the thermal characteristics of the molybdenum sputtered material, such as electrical conductivity, and stealth effects on infrared thermal imaging cameras. To this end, molybdenum sputtered samples were prepared by varying the density of the base sample and the type of base materials used. Thereafter, the produced samples were evaluated for their surface state, electrical conductivity, electromagnetic field characteristics, thermal characteristics, stealth effect on infrared thermal imaging cameras, and moisture characteristics. As a result of infrared thermal imaging, the molybdenum layer was directed towards the outside air, and when the sample was a film, it demonstrated a greater stealth effect than the fabric. When the molybdenum layer was directed to the outside air, all of the molybdenum sputtering-treated samples exhibited a lower surface temperature than the “untreated sample.” In addition, as a result of confirming electrical properties following the molybdenum sputtering treatment, it was determined that the film exhibited better electrical conductivity than the fabric. All samples that were subjected to molybdenum sputtering exhibited significantly reduced electromagnetic and IR transmission. As a result, the stealth effect on infrared thermal imaging cameras is considered to be a better way of interpreting heat transfer than infrared transmission. These results are expected to have future applications in high-performance smartwear, military uniforms, and medical wear.

산업이 발달함에 따라 이산화탄소, 휘발성 유기 화합물, 일산화탄소 등과 같은 독성 가스의 감지 및 모니터링이 중요시되고 있다. 새롭게 합성된 0 차원의 비납계 무기 페로브스카이트 소재는 광학적 방법과 전기적 방법을 융합하여 사용할 수 있는 가스 센서 특성을 가진다. 친환경 가스 센서는 결정의 상변이를 기반으로, 광학 및 전기적 특성 변화를 가져 하이드록실기 감지가 가능하며, 하이드록실기 극성과의 상관관계를 통해 차세대 센서 소자로의 응용 가능성이 기대된다.

연구에서는 새로 설계한 고분자 절연체 위에 전자 주개(Donor)-받개(Acceptor) 기반의 반도체성 공중합체인 Cyclopentadithiophene-alt-benzothiadiazole (CDT-BTZ)를 활성 반도체층으로 형성하여 제작한 고분자 반도체 전계효과 트랜지스터의 전기적 특성을 살펴보았다. 이 연구에서 제시하는 고분자 절연체 박막은 내열성과 전기절연성이 우수한 포스파젠과 멜리민 구조가 가교된 형태를 가지기 때문에 0.006 nm의 매우 평탄한 RMS 표면 거칠기를 가졌으며, 4.5 MV/cm 이상의 매우 우수한 절연강도와 1.55의 다소 낮은 유전 상수를 가진 것으로 측정되었다. 그리고, 고분자 절연 막과 계면을 이루는 CDT-BTZ D-A 타입 반도체성 공중합체 박막은 2.0 x 10-3 cm2/Vs의 선형영역 이동도와 1.0 x 10-3 cm2/Vs의 포화영역 이동도를 갖는 것으로 측정되었다. 이를 통해, 고분자 절연체 위에 형성된 CDT-BTZ 고분자 반도체 박막은 유연 전자회로의 스위칭 소자로 쓰이기에 충분한 잠재성이 있다고 여겨진다.

Zinc oxide (ZnO) based transparent conducting oxides (TCO) thin films, are used in many applications such as solar cells, flat panel displays, and LEDs due to their wide bandgap nature and excellent electrical properties. In the present work, fluorine and aluminium-doped ZnO targets are prepared and thin films are deposited on soda-lime glass substrate using a RF magnetron sputtering unit. The aluminium concentration is fixed at 2 wt%, and the fluorine concentration is adjusted between 0 to 2.0 wt% with five different concentrations, namely, Al2ZnO98(AZO), F0.5AZO97.5(FAZO1), F1AZO97(FAZO2), F1.5AZO96.5(FAZO3), and F2AZO96(FAZO4). Thin films are deposited with an RF power of 40 W and working pressure of 5 m Torr at 270 oC. The morphological analysis performed for the thin film reveals that surface roughness decreases in FAZO1 and FAZO2 samples when doped with a small amount of fluorine. Further, optical and electrical properties measured for FAZO1 sample show average optical transmissions of over 89 % in the visible region and 82.5 % in the infrared region, followed by low resistivity and sheet resistance of 3.59 × 10−4 Ωcm and 5.52 Ω/sq, respectively. In future, these thin films with excellent optoelectronic properties can be used for thin-film solar cell and other optoelectronics applications.

Oxide semiconductor, represented by a-IGZO, has been commercialized in the market as active layer of TFTs of display backplanes due to its various advantages over a-Si. a-IGZO can be deposited at room temperature by RF magnetron sputtering process; however, additional thermal annealing above 300oC is required to obtain good semiconducting properties and stability. These temperature are too high for common flexible substrates like PET, PEN, and PI. In this work, effects of microwave annealing time on IGZO thin film and associated thin-film transistors are demonstrated. As the microwave annealing time increases, the electrical properties of a-IGZO TFT improve to a degree similar to that during thermal annealing. Optimal microwave annealed IGZO TFT exhibits mobility, SS, Vth, and VH of 6.45 cm2/Vs, 0.17 V/dec, 1.53 V, and 0.47 V, respectively. PBS and NBS stability tests confirm that microwave annealing can effectively improve the interface between the dielectric and the active layer.

Amorphous In-Ga-Zn-O (a-IGZO) thin film transistors, because of their relatively low mobility, have limits in attempts to fulfill high-end specifications for display backplanes. In-Zn-O (IZO) is a promising semiconductor material for high mobility device applications with excellent transparency to visible light region and low temperature process capability. In this paper, the effects of working pressure on the physical and electrical properties of IZO films and thin film transistors are investigated. The working pressure is modulated from 2 mTorr to 5 mTorr, whereas the other process conditions are fixed. As the working pressure increases, the extracted optical band gap of IZO films gradually decreases. Absorption coefficient spectra indicate that subgap states increase at high working pressure. Furthermore, IZO film fabricated at low working pressure shows smoother surface morphology. As a result, IZO thin film transistors with optimum conditions exhibit excellent switching characteristics with high mobility (≥ 30cm2/Vs) and large on/off ratio.

Recently, research on cost reduction and efficiency improvement of crystalline silicon(c-Si) photovoltaic(PV) module has been conducted. In order to reduce costs, the thickness of solar cell wafers is becoming thinner. If the thickness of the wafer is reduced, cracking of wafer may occur in high temperature processes during the c-Si PV module manufacturing process. To solve this problem, a low temperature process has been proposed. Conductive paste(CP) is used for low temperature processing; it contains Sn57.6Bi0.4Ag component and can be electrically combined with solar cells and ribbons at a melting point of 150℃. Use of CP in the PV module manufacturing process can minimize cracks of solar cells. When CP is applied to solar cells, the output varies with the amount of CP, and so the optimum amount of CP must be found. In this paper, in order to find the optimal CP application amount, we manufactured several c-Si PV modules with different CP amounts. The amount control of CP is fixed at air pressure (500 kPa) and nozzle diameter 22G(outer diameter 0.72Ø, inner 0.42Ø) of dispenser; only speed is controlled. The c-Si PV module output is measured to analyze the difference according to the amount of CP and analyzed by optical microscope and Alpha-step. As the result, the optimum amount of CP is 0.452 ~ 0.544 g on solar cells.

Molybdenum is a low-resistivity transition metal that can be applied to silicon devices using Si-metal electrode structures and thin film solar cell electrodes. We investigate the deposition of metal Mo thin film by plasma-enhanced atomic layer deposition (PE-ALD). Mo(CO)6 and H2 plasma are used as precursor. H2 plasma is induced between ALD cycles for reduction of Mo(CO)6 and Mo film is deposited on Si substrate at 300℃. Through variation of PE-ALD conditions such as precursor pulse time, plasma pulse time and plasma power, we find that these conditions result in low resistivity. The resistivity is affected by Mo pulse time. We can find the reason through analyzing XPS data according to Mo pulse time. The thickness uniformity is affected by plasma power. The lowest resistivity is 176 μΩ·cm at Mo(CO)6 pulse time 3s. The thickness uniformity of metal Mo thin film deposited by PE-ALD shows a value of less than 3% below the plasma power of 200 W.

Pb(Zr,Ti)O3 (PZT) is used for the various piezoelectric devices owing to its high piezoelectric properties. However, lead (Pb), which is contained in PZT, causes various environment contaminations. (K,Na)NbO3 (NKN) is the most well-known candidate for a lead-free composition to replace PZT. A single crystal has excellent piezoelectric-properties and its properties can be changed by changing the orientation direction. It is hard to fabricate a NKN single crystal due to the sodium and potassium. Thus, (Na,K)NbO3-Ba(Cu,Nb)O3 (NKN-BCuN) is chosen to fabricate the single crystal with relative ease. NKNBCuN pellets consist of two parts, yellow single crystals and gray poly-crystals that contain copper. The area that has a large amount of copper particles may melt at low temperature but not the other areas. The liquid phase may be responsible for the abnormal grain growth in NKN-BCuN ceramics. The dielectric constant and tan δ are measured to be 684 and 0.036 at 1 kHz in NKN-BCuN, respectively. The coercive field and remnant polarization are 14 kV/cm and 20 μC/cm2.