In this study, we report significant improvements in lithium-ion battery anodes cost and performance, by fabricating nano porous silicon (Si) particles from Si wafer sludge using the metal-assisted chemical etching (MACE) process. To solve the problem of volume expansion of Si during alloying/de-alloying with lithium ions, a layer was formed through nitric acid treatment, and Ag particles were removed at the same time. This layer acts as a core-shell structure that suppresses Si volume expansion. Additionally, the specific surface area of Si increased by controlling the etching time, which corresponds to the volume expansion of Si, showing a synergistic effect with the core-shell. This development not only contributes to the development of high-capacity anode materials, but also highlights the possibility of reducing manufacturing costs by utilizing waste Si wafer sludge. In addition, this method enhances the capacity retention rate of lithium-ion batteries by up to 38 %, marking a significant step forward in performance improvements.

PURPOSES : The purpose of this study was to evaluate the performance of a titanium dioxide (TiO2) asphalt surface treatment agent for reducing NOx on the roadside at laboratory and full scales. METHODS : To verify the NOx reduction performance of TiO2 and silicon-based resin-applied surface treatment agents at the lab scale, a bed flow photo reactor test (ISO standard) and a mixed tank photo reactor test designed to apply real-scale construction materials were conducted. Subsequently, the full-scale NOx reduction performance was verified using a full-scale demonstration facility, and the field construction capability of the TiO2 asphalt surface treatment agent was verified through actual road site application. RESULTS : The bed flow photoreactor and mixed tank photoreactor methods showed the same trend in the NOx removal performance. Evaluation of the NOx removal performance of the TiO2 surface treatment agent revealed that the NO removal rate was approximately 13% at the laboratory scale and 15% at full scale. CONCLUSIONS : Through this study, it was determined that the asphalt surface treatment agent applied with TiO2 will have a sufficient NOx reduction effect in an actual road site. In the future, it will be necessary to analyze the continuity of the effect according to traffic volume through continuous monitoring in the field.

Here, we report the development of a new and low-cost core-shell structure for lithium-ion battery anodes using silicon waste sludge and the Ti-ion complex. X-ray diffraction (XRD) confirmed the raw waste silicon sludge powder to be pure silicon without other metal impurities and the particle size distribution is measured to be from 200 nm to 3 μm by dynamic light scattering (DLS). As a result of pulverization by a planetary mill, the size of the single crystal according to the Scherrer formula is calculated to be 12.1 nm, but the average particle size of the agglomerate is measured to be 123.6 nm. A Si/TiO2 core-shell structure is formed using simple Ti complex ions, and the ratio of TiO2 peaks increased with an increase in the amount of Ti ions. Transmission electron microscopy (TEM) observations revealed that TiO2 coating on Si nanoparticles results in a Si-TiO2 core-shell structure. This result is expected to improve the stability and cycle of lithium-ion batteries as anodes.

The conversion of all carbon preforms to dense SiC by liquid infiltration can become a low-cost and reliable method to form SiC-Si composites of complex shape and high density. Reactive sintered silicon carbide (RBSC) is prepared by covering Si powder on top of 0.5-5.0 wt% Y2O3-added carbon preforms at 1,450 and 1,500°C for 2 hours; samples are analyzed to determine densification. Reactive sintering from the Y2O3-free carbon preform causes Si to be pushed to one side and cracking defects occur. However, when prepared from the Y2O3-added carbon preform, an SiC-Si composite in which Si is homogeneously distributed in the SiC matrix without cracking can be produced. Using the Si + C = SiC reaction, 3C and 6H of SiC, crystalline Si, and Y2O3 phases are detected by XRD analysis without the appearance of graphite. As the content of Y2O3 in the carbon preform increases, the prepared RBSC accelerates the SiC conversion reaction, increasing the density and decreasing the pores, resulting in densification. The dense RBSC obtained by reaction sintering at 1,500 oC for 2 hours from a carbon preform with 2.0 wt% Y2O3 added has 0.20% apparent porosity and 96.9% relative density.

Silicon oxynitride that can be deposited two times faster than general SiNx:H layer was applied to fabricate the passivation protection layer of atomic layer deposition (ALD) Al2O3. The protection layer is deposited by plasma-enhanced chemical vapor deposition to protect Al2O3 passivation layer from a high temperature metallization process for contact firing in screen-printed silicon solar cell. In this study, we studied passivation performance of ALD Al2O3 film as functions of process temperature and RF plasma effect in plasma-enhanced chemical vapor deposition system. Al2O3/SiON stacks coated at 400 oC showed higher lifetime values in the as-stacked state. In contrast, a high quality Al2O3/SiON stack was obtained with a plasma power of 400 W and a capping-deposition temperature of 200 oC after the firing process. The best lifetime was achieved with stack films fired at 850 oC. These results demonstrated the potential of the Al2O3/SiON passivated layer for crystalline silicon solar cells.

This paper presents the impact of partial shading on CuInxGa(1-x)Se2(CIGS) photovoltaic(PV) modules with bypass diodes. When the CIGS PV modules were partially shaded, the modules were under conditions of partial reverse bias. We investigated the characterization of the bypass diode and solar cell properties of the CIGS PV modules when these was partially shaded, comparing the results with those for a crystalline silicon module. In crystalline silicon modules, the bypass diode was operated at a partial shade modules of 1.67 % shading. This protected the crystalline silicon module from hot spot damage. In CIGS thin film modules, on the other hand, the bypass diode was not operated before 20 % shading. This caused damage because of hotspots, which occurred as wormlike defects in the CIGS thin film module. Moreover, the bypass diode adapted to the CIGS thin film module was operated fully at 60% shading, while the CIGS thin film module was not operated under these conditions. It is known that the bypass diode adapted to the CIGS thin film module operated more slowly than that of the crystalline silicon module; this bypass diode also failed to protect the module from damage. This was because of the reverse saturation current of the CIGS thin film, 1.99 × 10−5 A/cm2, which was higher than that of crystalline silicon, 8.11 × 10−7 A/cm2.

목 적: 본 연구는 습윤성 물질을 포함한 기본적인 하이드로젤 콘택트렌즈 재료에 silicon 2,3-naphthalocyanine bis(trihexylsilyloxide)(SiNc)를 첨가하여 친수성 콘택트렌즈의 물리적 및 광학 특성을 측정하였다. 또한 제조된 고분자의 자외선 투과율과 접촉각을 측정하여 SiNc의 안의료용 렌즈 소재로의 활용도, 특히 습윤성을 향상시키는 안의료용 고분자로서의 활용도에 대해 알아보았다. 방 법: 친수성 하이드로젤 렌즈 제조를 위해 2-hydroxyethyl methacrylate (HEMA), N-vinyl-2-pyrrolidone (NVP), methylmethacrylate (MMA), 교차결합제인 ethylene glycol dimethacrylate (EGDMA) 그리고 개시제인 azobisisobutyronitrile (AIBN)을 사용하여 공중합 하였다. 또한, SiNc는 첨가제로 사용되었다. 중합 후 제조된 콘택트렌즈 재료의 함수율, 굴절률, 접촉각 및 분광투과율 등의 물리적 특성을 측정하였다. 결 과: 생성된 하이드로젤 렌즈 고분자의 물리적 특성을 측정한 결과, 함수율 38.12 ~ 37.98%, 굴절률 1.434 ~ 1.435, 접촉각 34.33 ~ 62.91°그리고 분광투과율의 경우 34.6 ~ 91.0%의 범위로 나타났다. 또한 SiNc를 첨가한 조합에서 자외선 투과율이 크게 감소하였으며, 습윤성은 증가하였다. 결 론: 습윤성 물질 및 SiNc를 첨가하여 제조된 안의료용 고분자 재료는 자외선 차단 및 습윤성이 우수한 하이드로젤 콘택트렌즈를 제조하기 위한 재료로 유용하게 사용될 것으로 기대된다.

The relationship the between electrical properties and surface roughness (Ra) of a wet-etched silicon wafer were studied. Ra was measured by an alpha-step process and atomic force microscopy (AFM) while varying the measuring range 10×10, 40×40, and 1000×1000μm. The resistivity was measured by assessing the surface resistance using a four-point probe method. The relationship between the resistivity and Ra was explained in terms of the surface roughness. The minimum error value between the experimental and theoretical resistivities was 4.23% when the Ra was in a range of 10×10μm according to AFM measurement. The maximum error value was 14.09% when the Ra was in a range of 40×40μm according to AFM measurement. Thus, the resistivity could be estimated when the Ra was in a narrow range.

Silicon nanoparticle is a promising material for electronic devices, photovoltaics, and biological applications. Here, we synthesize silicon nanoparticles via CO2 laser pyrolysis and study the hydrogen flow effects on the characteristics of silicon nanoparticles using high resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD), and UV-Vis-NIR spectrophotometry. In CO2 laser pyrolysis, used to synthesize the silicon nanoparticles, the wavelength of the CO2 laser matches the absorption cross section of silane. Silane absorbs the CO2 laser energy at a wavelength of 10.6μm. Therefore, the laser excites silane, dissociating it to Si radical. Finally, nucleation and growth of the Si radicals generates various silicon nanoparticle. In addition, researchers can introduce hydrogen gas into silane to control the characteristics of silicon nanoparticles. Changing the hydrogen flow rate affects the nanoparticle size and crystallinity of silicon nanoparticles. Specifically, a high hydrogen flow rate produces small silicon nanoparticles and induces low crystallinity. We attribute these characteristics to the low density of the Si precursor, high hydrogen passivation probability on the surface of the silicon nanoparticles, and low reaction temperature during the synthesis.

Effect of silicon infiltration on the bend and tensile strength of 2D cross-ply carbon-carbon composites are studied. It is observed that bend strength higher than tensile strength in both types of composite is due to the different mode of fracture and loading direction. After silicon infiltrations bend and tensile strength suddenly decreases of carbon-carbon composites. This is due to the fact that, after silicon infiltration, silicon in the immediate vicinity of carbon forms the strong bond between carbon and silicon by formation silicon carbide and un-reacted silicon as free silicon. Therefore, these composites consist of three components carbon, silicon carbide and silicon. Due to mismatch between these three components secondary cracks developed and these cracks propagate from 90˚ oriented plies to 0˚ oriented plies by damaging the fibers (i.e., in-situ fiber damages). Hence, secondary cracks and in-situ fiber damages are responsible for degradation of mechanical properties of carbon-carbon composites after silicon infiltration which is revealed by microstructure investigation study by scanning electron microscope.

자화된 유도결합형 C4F8 플라즈마로 SiO2를 건식식각시 실리콘 표면에 발생하는 손상과 오염에 대하여 연구하였다. 오염의 분석을 위해서 XPS, SIMS, TEM을 사용하였으며, 손상정도를 측정하기 위해서 HRTEM과 Schottky-diode 구성을 통한 I-V특성 측정을 사용하였다. 유도 결합형 C4F8 플라스마에 0에서 18Gauss까지의 자장이 가해짐에 따라서 실리콘 표면에 생기는 잔류막의 두께가 SiO2식각속도와 선택비의 증가와 함께 증가하였으며, XPS를 통하여 그 조성이 fluorine-rich에서 carbon-rich 한 상태로 변화함을 알 수 있었다. 자장을 가하지 않는 상태에서는 표면에서 40Å부근까지 고밀도의 손상층이 관찰되었으나, 자장을 가함에 따라서 노출된 손상층의 깊이는 깊어지나 그 밀도는 줄어들음을 HRTEM을 통하여 관찰 할 수 있었다. Schottky-diode를 통한 I-V특성곡선의 분석으로 자장이 증가함에 따라서 전기적인 손상이 감소함을 알 수 있었다.

실리콘 산화막을 N2O 분위기에서 RTP로 제조하여 그 성장 기구를 고찰 했다. 산화막과 기판 실리콘 계면 사이에 질소성분이 포함된 oxynitride층이 존재한다. N2O 기체를 이용한 산화막 성장은 삼화제 확산에 의해 성장이 지배되는 포물선 성장론을 따르고 산화제 확산 억제작용은 실리콘 산화막과 실리콘 기판사이에 존재하는 oxynitride막에서 일어난다. 확산이 산화막 성장을 결정하는 구간에서 포물선 성장율 상수 B의 활성화 에너지는 약 1.5 eV이고 산화막 두께 증가에 따라 증가한다.

실릴콘 산화막을 CHF3/C2F6 혼합가스를 사용하여 반응성이온 건식식각을 행할 때 실리콘 표면에 형성되는 잔류막과 손상충의 열적 거동을 X-선 광전자 분광기(XPS)와 이차이온 질량 분석기 (SIMS)를 사용, 연구하였다. 저항가열을 통한 in-situ 분석에 의해 폴리머 잔류막은 200˚C부터 분해가 시작되고 400˚C 이상의 가열에서는 graphite 형태의 탄소 결합체를 형성하며 분해됨을 알았다. 질소 분위기하의 급속 열처리를 통해 잔류막의 열분해는 800˚C 이상에서 완료되고 손상층을 형성하는 침투 불순원소의 기판 외부로의 확산이 관찰되었다.

실리콘 산화막을 CHF3/C2F6 혼합가스를 사용하여 반응성이온 건식식각을 행할 때 실리콘 표면에 형성되는 잔류막과 손상층을 X-선 광전자 분광기(XPS)와 이차이온 질량 분석기(SIMS)를 사용, 연구하였다. 실리콘, 탄소, 산소 및 불소의 angle-resolved XPS분석기술을 이용한 비파괴적 화학결합상태의 깊이분포 분석을 통하여 잔류막의 표면부에 O-F 결합이 존재하며 잔류막은 주로 탄소와 불소의 결합체인 C-F 플리머로 구성되어져 있고 Si-O, Si-C 및 Si-F 결합 등이 존재함을 알았다. 손상층은 실리콘 표면에서 약 60nm 깊이까지 탄소와 불소의 침투에 의해 형성되어져 있음을 알았다.