Recently, the electron transport layer (ETL) has become one of the key components for high-performance perovskite solar cell (PSC). This study is motivated by the nonreproducible performance of ETL made of spin coated SnO2 applied to a PSC. We made a comparative study between tin oxide deposited by atomic layer deposition (ALD) or spin coating to be used as an ETL in N-I-P PSC. 15 nm-thick Tin oxide thin films were deposited by ALD using tetrakisdimethylanmiotin (TDMASn) and using reactant ozone at 120 °C. PSC using ALD SnO2 as ETL showed a maximum efficiency of 18.97 %, and PSC using spin coated SnO2 showed a maximum efficiency of 18.46 %. This is because the short circuit current (Jsc) of PSC using the ALD SnO2 layer was 0.75 mA/cm2 higher than that of the spin coated SnO2. This result can be attributed to the fact that the electron transfer distance from the perovskite is constant due to the thickness uniformity of ALD SnO2. Therefore ALD SnO2 is a candidate as a ETL for use in PSC vacuum deposition.

It has been known that as oxide layer (ZrO2) forms on the nuclear fuel cladding during irradiation in nuclear power plants, the corrosion kinetics are influenced by various parameters such as chemical environments. One of those environments, crud deposition driven by coolant chemistry has an adverse effect on the formation of oxide (ZrO2) and leads to increase thickness of the layer. In this study, crud formation was performed through loop experiment equipment on the surface of intentionally-made oxide layer (ZrO2) on cladding tubes and then the composition and characteristics of cruds were examined for the investigation of nuclear power plant environment. As a result, various cruds in composition and microstructure were formed depending on the exquisite methods and conditions such as metal ion concentration.

Radioactive Oxide is formed on the surface of the coolant pipe of the nuclear power plant. In order to remove the oxide film that is formed on the surfaces of the coolant pipe, chemical and physical decontamination technologies are used. The disadvantage of traditional technologies is that they produce secondary radioactive wastes. Therefore, in this study, the short-pulsed laser eco-friendly technology was used in order to reduce the production of secondary radioactive wastes. It was also used to minimize the damage that was caused to the base material and to remove the contaminated oxide film. The study was carried out using a Stainless steel 304 specimen that was coated with nickel-ferrite particles. Additionally, a transport robot was 3D modeled and manufactured in order to efficiently remove the oxide film from the coolant pipe of the nuclear power plant. The transport robot has a fixed laser head to move inside the horizontal and vertical pipes. The rotating laser head removes the contaminated oxide film on the inner surface of the coolant pipe. In the future, as a condition of the 1064nm short-pulsed laser ablation technique determined by basic analysis, we plan to analyze whether the transport robot is applicable to the radiation contamination site of the nuclear power plant.

This study compares the characteristics of a compact TiO2 (c-TiO2) powdery film, which is used as the electron transport layer (ETL) of perovskite solar cells, based on the manufacturing method. Additionally, its efficiency is measured by applying it to a carbon electrode solar cell. Spin-coating and spray methods are compared, and spraybased c-TiO2 exhibits superior optical properties. Furthermore, surface analysis by scanning electron microscopy (SEM) and atomic force microscopy (AFM) exhibits the excellent surface properties of spray-based TiO2. The photoelectric conversion efficiency (PCE) is 14.31% when applied to planar perovskite solar cells based on metal electrodes. Finally, carbon nanotube (CNT) film electrode-based solar cells exhibits a 76% PCE compared with that of metal electrodebased solar cells, providing the possibility of commercialization.

Graphene, a new material with various advantageous properties, has been actively used in various fields in recent years. Applications of graphene oxide are increasing in combination with other materials due to the different properties of graphene oxide, depending on the number of single and multiple layers of graphene. In this study, single-layer graphene oxide and multi-layer graphene oxide are spray coated on polystyrene, and the physicochemical properties of the coated surfaces are characterized using SEM, Raman spectroscopy, AFM, UV-Vis spectrophotometry, and contact angle measurements. In singlelayer graphene oxide, particles of 20 μm are observed, whereas a 2D peak is less often observed, and the difference in surface height increases according to the amount of graphene oxide. Adhesion increases with an increase in graphene oxide up to 0.375 mg, but decreases at 0.75 mg. In multi-layer graphene oxide, particles of 5 μm are observed, as well as a 2D peak. According to the amount of graphene oxide, the height difference of the surface increases and the adhesive strength decreases. Both materials are hydrophilic, but single-layer graphene oxide has a hydrophilicity higher than that of multi-layer graphene oxide. We believe that multi-layer graphene oxide and single-layer graphene oxide can be implemented based on the characteristics that make them suitable for application.

Silicon heterojunction solar cells can achieve high conversion efficiency with a simple structure. In this study, we investigate the passivation characteristics of VOx thin films as a hole-selective contact layer using ALD (atomic layer deposition). Passivation characteristics improve with iVoc (implied open-circuit voltage) of 662 mV and minority carrier lifetime of 73.9 μs after post-deposition annealing (PDA) at 100 oC. The improved values are mainly attributed to a decrease in carbon during the VOx thin film process after PDA. However, once it is annealed at temperatures above 250 oC the properties are rapidly degraded. X-ray photoelectron spectroscopy is used to analyze the chemical states of the VOx thin film. As the annealing temperature increases, it shows more formation of SiOx at the interface increases. The ratio of V5+ to V4+, which is the oxidation states of vanadium oxide thin films, are 6:4 for both as-deposition and annealing at 100 oC, and 5:5 for annealing at 300 oC. The lower the carbon content of the ALD VOx film and the higher the V5+ ratio, the better the passivation characteristics.

고리 1호기는 원전해체 계획에 따라 영구정지 이후 가능한 한 빠른 시일 내에 원자로냉각재계통의 화학제염을 수행할 계획으로, 계통제염 기술 확보를 위해 한수원에서는 2014년부터‘원전 해체설계를 위한 냉각재계통 및 기기제염 상용기술 개발’연구과제를 통해 화학제염기술을 개발하고 있다. 본 연구를 위해 Lab. 규모 계통제염 공정장치를 제작하였으며, 계통제염 대상의 주요재료인 STS304, 316, 410, Alloy600, SA508을 사용하여 화학제염 공정실험을 수행하였다. 화학제염 공정실험의 목적은 산화-환원공정의 최적시간, 최적제염제 및 공정횟수를 도출하기 위함이다. 화학제염 공정실험은 과망간산-옥살산 기반의 단위공정 및 연속공정 실험, 과망간산+질산-옥살산 기반의 연속공정 실험으로 나누어 수행하였다. 그 결과 단위공정실험을 통해 최적공정 시간인 산화공정 5시간, 환원공정 4시간을 도출하였으며, 연속공정실험을 통해 최적제 염제와 공정횟수를 도출하였다. 최적제염제는 산화제의 경우 200 mg·L-1 과망간산 + 200 mg·L-1 질산이고, 환원제는 2000 mg·L-1 옥살산이며, 공정횟수는 STS304와 SA508의 경우 2 cycle, Alloy600의 경우 3 cycle 이상 수행하는 것이 적절할 것 으로 평가되었다.

We investigated the effect of ZnO buffer layer on the formation of ZnO thin film by ultrasonic assisted spray pyrolysis deposition. ZnO buffer layer was formed by wet solution method, which was repeated several times. Structural and optical properties of the ZnO thin films deposited on the ZnO buffer layers with various cycles and at various temperatures were investigated by field-emission scanning electron microscopy, X-ray diffraction, and photoluminescence spectrum analysis. The structural investigations showed that three-dimensional island shaped ZnO was formed on the bare Si substrate without buffer layers, while two-dimensional ZnO thin film was deposited on the ZnO buffer layers. In addition, structural and optical investigations showed that the crystalline quality of ZnO thin film was improved by introducing the buffer layers. This improvement was attributed to the modulation of the surface energy of the Si surface by the ZnO buffer layer, which finally resulted in a modification of the growth mode from three to two-dimensional.

Graphene oxide (GO) has received a lot of attention in membrane science for its CO2-philic nature, which can facilitate CO2 separation performance. In addition, GO has attractive properties for gas separation membrane material due to thin-film membrane formation and tunable transport channel. GO membrane can be generally prepared by coating GO nanosheets on microporous polymer supports for mechanical stability. However, the substrates for in thin GO layer should be carefully chosen for good adhesion between GO layer and support surface with maintaining good separation performance. In this study, we tried to modify the surface properties of high permeable support membranes by using gutter layer as an intermediate layer, and measured the gas transport properties of these GO thin-film composite membranes.

In this study, we present a facile method of fabricating graphene oxide (GO) filmson the surface of polyimide (PI) via layer-by-layer (LBL) assembly of charged GO. The positively charged amino-phenyl functionalized GO (APGO) is alternatively complexed with the nega-tively charged GO through an electrostatic LBL assembly process. Furthermore, we investi-gated the water vapor transmission rate and oxygen transmission rate of the prepared (reduced GO [rGO]/rAPGO)10 deposited PI film(rGO/rAPGO/PI) and pure PI film.The water vapor transmission rate of the GO and APGO-coated PI composite filmwas increased due to the intrinsically hydrophilic property of the charged composite films.However, the oxygen trans-mission rate was decreased from 220 to 78 cm3/m2·day·atm, due to the barrier effect of the graphene filmson the PI surface. Since the proposed method allows for large-scale production of graphene films, it is considered to have potential for utiliation in various applications.

This study develops a highly transparent ohmic contact scheme using indium oxide doped ZnO (IZO)as a current spreading layer for p-GaN in order to increase the optical output power of nitride-based light-emitting diodes (LEDs). IZO based contact layers of IZO, Ni/IZO, and NiO/IZO were prepared by e-beamevaporation, followed by a post-deposition annealing. The transmittances of the IZO based contact layers werein excess of 80% throughout the visible region of the spectrum. Specific contact resistances of 3.4×10−4,1.2×10−4, 9.2×0−5, and 3.6×10−5Ω·cm2 for IZO, Ni/Au, Ni/IZO, and NiO/IZO, respectively were obtained. Theforward voltage and the optical output power of GaN LED with a NiO/IZO ohmic contact was 0.15V lower andwas increased by 38.9%, respectively, at a forward current of 20mA compared to that of a standard GaN LEDwith an Ni/Au ohmic contact due to its high transparency, low contact resistance, and uniform current spreading.

We present the structural, optical, and electrical properties of amorphous silicon suboxide (a-SiOx) films grown on indium tin oxide glass substrates with a radio frequency magnetron technique from a polycrystalline silicon oxide target using ambient Ar. For different substrate-target distances (d = 8 cm and 10 cm), the deposition temperature effects were systematically studied. For d = 8cm, oxygen content in a-SiOx decreased with dissociation of oxygen onto the silicon oxide matrix; temperature increased due to enlargement of kinetic energy. For d = 10 cm, however, the oxygen content had a minimum between 150˚ and 200˚. Using simple optical measurements, we can predict a preferred orientation of liquid crystal molecules on a-SiOx thin film. At higher oxygen content (x > 1.6), liquid crystal molecules on an inorganic liquid crystal alignment layer of a-SiOx showed homogeneous alignment; however, in the lower case (x< 1.6), liquid crystals showed homeotropic alignment.

[ ] was coated with , MgO and respectively by sol-gel method and cured at 900 and . The coated oxides did not react with at but reacted with it to form at . The specimen coated with at formed a dense protecting layer and showed the best oxidation resistance at in air. However, the dense protecting layers did not form in and MgO coated specimens cured even at . MgO coated specimen showed the worst improvement in the oxidation resistance because the reactivity of MgO with was highest. On the other hand, the electrical conductivities were measured in MgO and coated specimens to have TiCx but could not be measured in the coated ones because of the nonconductive dense protected layers.