Niobium powder was made from potassium heptafluoroniobite () as the raw material using sodium (Na) as a reducing agent based on the hunter process. The apparatus for the experiment was designed and built specifically for the present study. The niobium particle size greatly increased as the reduction temperature increased from to . The particle size was fairly uniform, varying from to depending on the reduction temperatures. The niobium powder morphology and particle size are very sensitive to a reaction temperature in the metallothermic reduction process. The yield of niobium powder increased from 55% to 80% with a increasing a reaction temperature.

The ultrafine titanium carbonitride particles () below 100nm in mean size were successfully synthesized by Mg-thermal reduction process. The nanostructured sub-stoichiometric titanium carbide () particles were produced by the magnesium reduction at 1123K of gaseous and the heat treatments in vacuum were performed for five hours to remove residual magnesium and magnesium chloride mixed with . And final phase was obtained by nitrification under normal gas at 1373K for 2 hrs. The purity of produced particles was above 99.3% and the oxygen contents below 0.2 wt%. We investigated in particular the effects of the temperatures in vacuum treatment on the particle refinement of final product.

This research was performed to evaluate heavy metal leaching characteristics of the sludge from paper mill process with sintering temperature. Heavy metal leaching of the sludge was characterized with Korean Leaching Test and Toxicity Characteristic Leaching Procedure. The test sludge was composed of 70.72% of moisture, 9.5% of volatile solids and 9.76% of fixed solids. As a result of XRF analysis, Fe was the highest inorganic element in approximately 83%, which implies the recycling possibility of the sludge in reuse of Fenton chemicals and artificial lightweight aggregate. Leaching of heavy metals from sintered sludge was lower than the dry ones. However, there was no significant difference in leaching characteristics between the sludges sintered at 350℃ and 650℃. Zn and Fe were leached more greatly in TCLP and KLT methods respectively.

본 연구의 목적은 금속 중공사형 필터에 무기 입자를 코팅하여 금속/세라믹 복합 한외여과막을 제조하는 것이다. 직경이 2.0 mm이며 기공 크기가 2~8 μm 범위를 갖는 니켈 중공사 필터에 급냉건조법과 침지-건조법으로 실리카 졸과 티타니아 졸을 코팅하여 금속쎄라믹 복합 한외여과막을 제조하였다. SEM과 PMI 결과로부터 기공 크기가 50 nm 수준을 갖는 것을 확인하였다. 기공 크기는 입자 크기, 소성시간 및 온도에 따라 차이를 보였다.

Silicon carbide (SiC) is a promising material for power device applications due to its wide band gap(3.26 eV for 4H-SiC), high critical electric field and excellent thermal conductivity. The Schottky barrier diodeis the representative high-power device that is currently available commercially. A field plate edge-terminated4H-SiC was fabricated using a lift-off process for opening the Schottky contacts. In this case, Ni/Ti dual-metalcontacts were unintentionally formed at the edge of the Schottky contacts and resulted in the degradation ofthe electrical properties of the diodes. The breakdown voltage and Schottky barrier height (SBH, ΦB) was 107V and 0.67eV, respectively. To form homogeneous single-metal Ni/4H-SiC Schottky contacts, a deposition andetching method was employed, and the electrical properties of the diodes were improved. The modified SBDsshowed enhanced electrical properties, as witnessed by a breakdown voltage of 635V, a Schottky barrier heightof ΦB=1.48eV, an ideality factor of n=1.04 (close to one), a forward voltage drop of VF=1.6V, a specific onresistance of Ron=2.1mΩ-cm2 and a power loss of PL=79.6Wcm-2.

줄포만 갯벌의 체계적이고 과학적인 관리를 위하여 갯벌 퇴적물을 대상으로 입도특성 및 유기물 그리고 중금속 조사를 실시하였고, 퇴적물중의 중금속 오염도를 평가하였다. 줄포만 전체 갯벌의 입도는 연안과 직각방향인 F라인에서 대부분 Clay질이 우세한 반면, 만의 연안측면에 위치한 R과 L라인에서 Silt질이 우세한 것으로 나타나서 Silt-Clay 또는 Clay-Silt가 대부분이었다. 평균입경은 3.7 Φ~ 10.4 Φ의 범위로 평균 7 Φ 이상의 높은 평균입도를 나타내어 퇴적물 분류학상 세립질 퇴적물(4 Φ 이상)에 해당되었다. 퇴적물의 유기물 농도는 연안에서 직각방향으로 뻗은 F라인에서 높게 나타난 반면, 연안 측면을 따라 조사된 L과 R라인에서 상대적으로 낮게 나타났다. 갯벌 퇴적물의 중금속 분포를 보면 연안의 직각방향인 F라인보다 연안측면의 R과 L라인에서 대체적으로 높은 중금속 농도를 나타내고 있었다. 유기물과 입도는 양호한 상관성을 보였고, 입도 평균치와 중금속의 일부 원소와 양호한 상관성을 나타내었지만, 중금속 원소간에는 약간의 상관성은 있었으나 대체적으로 낮은 상관계수를 보였다. 중금속 오염도 평가를 위하여 미국 EPA와 NOAA 그리고 한국 환경정책평가연구원에서 제시한 중금속 오염기준을 적용해 보았다. 줄포만 갯벌퇴적물의 중금속 오염도는 미국 EPA 기준에서 항목별 편차는 있었으나 대부분이 Nonpolluted와 Moderaterly polluted에 속하였고, NOAA의 기준에서는 대부분이 ERL 이하의 오염수준을 보였다. 한국 환경정책평가연구원에서 제시한 기준안에서는 대부분이 목표수준 이하의 값을 나타내었다.

The acrylic coating emulsions were prepared by the emulsion polymerization to protect the surface of steel plate from the corrosion chemicals like acid, base and salt water. MMA(methyl methacrylate), styrene, BA(butyl acrylate), and 2-HEMA(2-hydroxyethyl methacrylate) were used as monomer. KPS(potassium persulfate) and SBS(sodium bisulfite) as redox initiator and SDBS(sodium dodecylbenzene sulfonate) as emulsifier were used on the emulsion polymerization reaction. The most stable in-situ coating was obtained when 10% of MMA was added. Both particle size and quantity in emulsion were decreased as increasing the mount of SDBS. the most stable prepared coating emulsion with polyisocyanate crosslinker showed very high anticorrosion properties on the coated steel layer to salt water, whereas no significant improvement of anticorrosion property to acdic and basic condition it showed.

Heavy metal concentration of Fe, Zn, Cu, Cd and Pb were analysed from seaweeds (Ulva pertusa, Sargassum thunbergii, Caulacanthus okamurae), sediments and seawater at the two experimental sites of Daebul and Sabjin industrial complex in Mokpo coastal area

Growth behavior of InGaN/GaN self-assembled quantum dots (QDs) was investigated with respect to different growth parameters in low pressure metalorganic chemical vapor deposition. Locally formed examples of three dimensional InGaN islands were confirmed from the surface observation image with increasing indium source ratio and growth time. The InGaN/GaN QDs were formed in Stranski-Krastanow (SK) growth mode by the continuous supply of metalorganic (MO) sources, whereas they were formed in the Volmer-Weber (V-W) growth mode by the periodic interruption of the MO sources. High density InGaN QDs with 1~2nm height and 40~50nm diameter were formed by the S-K growth mode. Dome shape InGaN dots with 200~400nm diameter were formed by the V-W growth mode. InN content in InGaN QDs was estimated to be reduced with the increase of growth temperature. A strong peak between 420-460 nm (2.96-2.70 eV) was observed for the InGaN QDs grown by S-K growth mode in photoluminescence spectrum together with the GaN buffer layer peak at 362.2 nm (3.41 eV).

Electrical properties of multi-channel metal-induced unilaterally precrystallized polycrystalline silicon thin-film transistor (MIUP poly-Si TFT) devices and circuits were investigated. Although their structure was integrated into small area, reducing annealing process time for fuller crystallization than that of conventional crystal filtered MIUP poly-Si TFTs, the multi-channel MIUP poly-Si TFTs showed the effect of crystal filtering. The multi-channel MIUP poly-Si TFTs showed a higher carrier mobility of more than 1.5 times that of the conventional MIUP poly-Si TFTs. Moreover, PMOS inverters consisting of the multi-channel MIUP poly-Si TFTs showed high dynamic performance compared with inverters consisting of the conventional MIUP poly-Si TFTs.