La0.6Sr0.4MnO3 (LSMO) thin films, which are known as colossal magnetoresistance materials, were prepared on fused silica thin films by conventional RF magnetron sputtering, and the interfacial reactions between them were investigated by rapid thermal processing. Various analyses, namely, X-ray diffraction, transmission electron microscopy combined with energy adispersive X-ray spectrometry, and secondary ion mass spectrometry, were performed to explain the mechanism of the interfacial reactions. In the case of an LSMO film annealed at 800˚C, the layer distinction against the underplayed SiO2 was well preserved. However, when the annealing temperature was raised to 900˚C, interdiffusion and interreaction occurred. Most of the SiO2 and part of the LSMO became amorphous silicate that incorporated La, Sr, and Mn and contained a lot of bubbles. When the annealing temperature was raised to 950˚C, the whole stack became an amorphous silicate layer with expanded bubbles. The thermal instability of LSMO on fused silica should be an important consideration when LSMO is integrated into Si-based solid-state devices.

The CdS thin film used as a window layer in the CdTe thin film solar cell transports photo-generated electrons to the front contact and forms a p-n junction with the CdTe layer. This is why the electrical, optical, and surface properties of the CdS thin film influence the efficiency of the CdTe thin film solar cell. When CdTe thin film solar cells are fabricated, a heat treatment is done to improve the qualities of the CdS thin films. Of the many types of heat treatments, the CdCl2 heat treatment is most widely used because the grain size in CdS thin films increases and interdiffusion between the CdS and the CdTe layer is prevented by the heat treatment. To investigate the changes in the electrical, optical, and surface properties and the crystallinity of the CdS thin films due to heat treatment, CdS thin films were deposited on FTO/glass substrates by the rf magnetron sputtering technique, and then a CdCl2 heat treatment was carried out. After the CdCl2 heat treatment, the clustershaped grains in the CdS thin film increased in size and their boundaries became faint. XRD results show that the crystallinity improved and the crystalline size increased from 15 to 42 nm. The resistivity of the CdS single layer decreased from 3.87 to 0.26 Ωcm, and the transmittance in the visible region increased from 64% to 74%.

Transparent conducting oxides (TCOs) used in the antireflection layer and current spreading layer of heterojunction solar cells should have excellent optical and electrical properties. Furthermore, TCOs need a high work function over 5.2 eV to prevent the effect of emitter band-bending caused by the difference in work function between emitter and TCOs. Sn-doped In2O3 (ITO) film is a highly promising material as a TCO due to its excellent optical and electrical properties. However, ITO films have a low work function of about 4.8 eV. This low work function of ITO films leads to deterioration of the conversion efficiency of solar cells. In this work, ITO films with various Zn contents of 0, 6.9, 12.7, 28.8, and 36.6 at.% were fabricated by a co-sputtering method using ITO and AZO targets at room temperature. The optical and electrical properties of Zn-doped ITO thin films were analyzed. Then, silicon heterojunction solar cells with these films were fabricated. The 12.7 at% Zn-doped ITO films show the highest hall mobility of 35.71 cm2/Vsec. With increasing Zn content over 12.7, the hall mobility decreases. Although a small addition of Zn content increased the work function, further addition of Zn content over 12.7 at.% led to decreasing electrical properties because of the decrease in the carrier concentration and hall mobility. Silicon heterojunction solar cells with 12.7 at% Zn-doped ITO thin films showed the highest conversion efficiency of 15.8%.

Cu(In, Ga)Se2 (CIGS) precursor films were electrodeposited on Mo/glass substrates in acidic solutions containingCu2+, In3+, Ga3+, and Se4+ ions at −0.6V (SCE) and pH 1.8. In order to induce recrystallization, the electrodepositedCu1.00In0.81Ga0.09Se2.08 (25.0at.% Cu+20.2at.% In+2.2at.% Ga+52.0at.% Se) precursor films were annealed under a highSe gas atmosphere for 15, 30, 45, and 60 min, respectively, at 500oC. The Se amount in the film increased from 52at.% to62at.%, whereas the In amount in the film decreased from 20.8at.% to 9.1at.% as the annealing time increased from 0 (as-deposited state) to 60 min. These results were attributed to the Se introduced from the furnace atmosphere and reacted withthe In present in the precursor films, resulting in the formation of the volatile In2Se. CIGS precursor grains with a cauliflowershape grew as larger grains with the CuSe2 and/or Cu2-xSe faceted phases as the annealing times increased. These faceted phasesresulted in rough surface morphologies of the CIGS films. Furthermore, the CIGS layers were not dense because the emptyspaces between the grains were not removed via annealing. Uniform thicknesses of the MoSe2 layers occurred at the 45 and60 min annealing time. This implies that there was a stable reaction between the Mo back electrode and the Se diffused throughthe CIGS film. The results obtained in the present research were sufficiently different from comparable studies where therecrystallization annealing was performed under an atmosphere of Ar gas only or a low Se gas pressure.

We present the effect of a coupling agent on the optoelectrical properties of few-walled carbon nanotube (FWCNT)/epoxy resin hybrid films fabricated on glass substrates. The FWCNT/epoxy resin mixture solution was successfully prepared by the direct mixing of a HNO3-treated FWCNT solution and epoxy resin. FWCNT/binder hybrid films containing different amounts of the coupling agent were then fabricated on UV-ozone-treated glass substrates. To determine the critical binder content (Xc), the effects of varying the binder content in the FWCNT/silane hybrid films on their optoelectrical properties were investigated. In this system, the Xc value was approximately 75 wt%. It was found that above Xc, the coupling agent effectively decreased the sheet resistance of the films. From microscopy images, it was observed that by adding the coupling agent, more uniform FWCNT/binder films were formed.

Displacement current measuring technique has been applied on the study of polyamic acid monolayer containing p-nitroazobenzene. The displacement current was generated from monolayer on the water surface by monolayer compression and expansion. Maxwell displacement current(MDC) was generated when the area per molecule was about 200a2 and 70a2. Maxwell displacement currents were investigated in connection with monolayer compression cycles. It was found that the maximum of MDC appeared at the molecular area just before the initial rise of surface pressure in compression cycles. The monolayer surface morphology of the LB film have been measured by Atomic Force Microscope(AFM). As a result, we confirmed that the microscopic properties of LB film by AFM showed the good orientation of monolayer molecules and the thickness of monolayer was 3.5-4.1nm.

원자전달 라디칼 중합(ATRP)에 의해 poly(vinyl chloride) (PVC) 주사슬과 poly(styrene sulfonic acid) (PSSA) 곁사슬로 되어있는 양쪽성 PVC-g-PSSA 가지형 공중합체를 합성하였다. PVC-g-PSSA 가지형 공중합체 고분자를 템플레이트로 사용하고 졸겔법을 적용하여, 결정성 아타네제상의 미세기공 이산화티타튬 필름을 제조하였다. TiO2 전구체인 TTIP를 친수성인 PSSA 영역과 선택적으로 작용시켜 TiO2 메조기공 필름을 성장하였으며, 이를 주사전자 현미경 (SEM)과 엑스레이회절 (XRD)분석을 통해 분석하였다. 스핀코팅 횟수와 P25 도입에 따른 염료감응 태양전지 성능을 체계적으로 분석하였다. 그 결과 준고체 고분자 전해질을 이용하였을 때, 100 mW/㎠ 조건에서 에너지 변환 효율이 2.7%에 이르렀다.

캐나다까지 장거리 수출조건은 선적 후 통관까지 20일 동안은 7±1℃와 90% 상대습도가 유지되었고, 이후 저장창고 이송전에 3시간만에 13℃까지 상승한 후 저장창고 이송후 3일간 3~4℃와 90% 상대습도를 나타내었다. 이후 상온조건의 판매소에서는 16℃에 60% 이하의 상대습도를 나타내었다. 이상의 유통조건을 기초로 7℃, 90% 상대습도에서 15일간 저장한 후 20℃, 55% 상대습도에서 7일간 저장하는 조건에서 MA저장 실험을 실시하였다. 포장방법에는 무처리와 기존의 유공포장(6mm 직경의 구멍이 18holes/m2) 그리고 레이저로 가공한 3가지 비천공 필름 (산소 투과도 5,000과 20,000 그리고 100,000cc/m2·day·atm)로 하였다. 저장 중 생체중 감소는 3가지에서는 1% 이하였으나, 유공처리과 무처리는 4% 이상으로 품질 저하가 나타났다. 상온으로 이동한 저장 15일 후 포장재내 대기조성이 5,000cc/m2·day·atm비천공필름처리는 산소 5%, 이산화탄소 15%를 나타내었고, 20,000cc/m2·day·atm 비천공필름처리는 산소 16%, 이산화탄소 4~5%를 나타내어, 이들처리에서는 이산화탄소 농도가 파프리카의 적정 범위를 상회하였다. 포장재내 에틸렌 농도는 처리간 큰차이가 없었다. 저장 중 외관상 품질은 이산화탄소 농도가 적절하게 유지되었던 100,000cc/m2·day·atm 비천공필름처리에서 가장 높게 유지되었으며, 경도와 당도는 비천공 필름간 차이에 통계적 유의성은 없었다. 이상의 결과로 보아 20일 이상의 장기 유통 중 판매가 상온에서 이루어질 경우 포장내 이산화탄소 농도가 3% 이하로 유지될 수 있는 100,000cc/m2·day·atm의 통기성을 가장 포장재가 파프리카 MAP에 적합하다고 사료된다.

Negative temperature coefficient (NTC) materials have been widely studied for industrial applications, such assensors and temperature compensation devices. NTC thermistor thick films of Ni1+xMn2-xO4+δ (x=0.05, 0, −0.05) werefabricated on a glass substrate using the aerosol deposition method at room temperature. Resistance verse temperature (R-T)characteristics of the as-deposited films showed that the B constant ranged from 3900 to 4200 K between 25oC and 85oCwithout heat treatment. When the film was annealed at 600oC 1h, the resistivity of the film gradually decreased due tocrystallization and grain growth. The resistivity and the activation energy of films annealed at 600oC for 1 h were 5.203, 5.95,and 4.772KΩ·cm and 351, 326, and 299meV for Ni0.95Mn2.05O4+δ, NiMn2O4, and Ni1.05Mn1.95O4+δ, respectively. The annealingprocess induced insulating Mn2O3 in the Ni deficient Ni0.95Mn2.05O4+δ composition resulting in large resistivity and activationenergy. Meanwhile, excess Ni in Ni1.05Mn1.95O4+δ suppressed the abnormal grain growth and changed Mn3+ to Mn4+, givinglower resistivity and activation energy.

This paper has relatively high technical standard and experimental skill. The fabrication of TCO film with hightransparency, low resistance and low chromaticity require exact control of several competing factors. This paper has resolvedthese problems reasonably well, thus recommended for publication. Indium tin oxide(ITO) thin films were by D.C. magnetronroll-to-roll sputter system utilizing ITO and SiO2 targets of ITO and SiO2. In this experiment, the effect of D.C. power, windingspeed, and oxygen flow rate on electrical and optical properties of ITO thin films were investigated from the view point ofsheet resistance, transmittance, and chromaticity(b*). The deposition of SiO2 was performed with RF power of 400W, Ar gasof 50sccm and the deposition of ITO, DC power of 600W, Ar gas of 50sccm, O2 gas of 0.2sccm, and winding speed of 0.56m/min. High quality ITO thin films without SiO2 layer had chromaticity of 2.87, sheet resistivity of 400ohm/square, and trans-mittance of 88% and SiO2-doped ITO Thin film with chromaticity of 2.01, sheet resistivity of 709ohm/square, and transmittanceof more than 90% were obtained. As a result, SiO2 was coated on PET before deposition of ITO, their chromaticity(b*) andtransmittance were better than previous results of ITO films. These results show that coating of SiO2 induced arisingchromaticity(b*) and transmittance. If the thickness of SiO2 is controlled, sheet resistance value of ITO film will be expected tobe better for touch screen. A four point probe and spectrophotometer are used to investigate the properties of ITO thin films.

Polysilazane and silazane-based precursor films were deposited on stacked TiN/Ti/TEOS/Si-substrate by spin-coating, then annealed at 150~400oC, integrated further to form the top electrode and pad, and finally characterized. Theprecursor solutions were composed of 20% perhydro-polysilazane (SiH2NH)n, and 20% hydropolymethyl silazane(SiHCH3NH)n in dibutyl ether. Annealing of the precursor films led to the compositional change of the two chemicals intosilicon (di)oxides, which was confirmed by Fourier transform infrared spectroscopy (FTIR) spectra. It is thought that thedifferent results that were obtained originated from the fact that the two precursors, despite having the same synthetic routeand annealing conditions, had different chemical properties. Electrical measurement indicated that under 0.6MV/cm, a largercapacitance of 2.776×10−11 F and a lower leakage current of 0.4pA were obtained from the polysilazane-based dielectric films,as compared to 9.457×10−12 F and 2.4pA from the silazane-based film, thus producing a higher dielectric constant of 5.48compared to 3.96. FTIR indicated that these superior electrical properties are directly correlated to the amount of Si-O bondsand the improved chemical bonding structures of the spin-on dielectric films, which were derived from a precursor without C.The chemical properties of the precursor films affected both the formation and the electrical properties of the spin-on dielectricfilm.

The electro-deposition of compound semiconductors has been attracting more attention because of its ability torapidly deposit nanostructured materials and thin films with controlled morphology, dimensions, and crystallinity in a cost-effective manner (1). In particular, low band-gap A2B3-type chalcogenides, such as Sb2Te3 and Bi2Te3, have been extensivelystudied because of their potential applications in thermoelectric power generator and cooler and phase change memory.Thermoelectric SbxTey films were potentiostatically electrodeposited in aqueous nitric acid electrolyte solutions containingdifferent ratios of TeO2 to Sb2O3. The stoichiometric SbxTey films were obtained at an applied voltage of −0.15V vs. SCE usinga solution consisting of 2.4mM TeO2, 0.8mM Sb2O3, 33mM tartaric acid, and 1M HNO3. The stoichiometric SbxTey filmshad the rhombohedral structure with a preferred orientation along the [015] direction. The films featured hole concentrationand mobility of 5.8×1018/cm3 and 54.8cm2/V·s, respectively. More negative applied potential yielded more Sb content in thedeposited SbxTey films. In addition, the hole concentration and mobility decreased with more negative deposition potential andfinally showed insulating property, possibly due to more defect formation. The Seebeck coefficient of as-deposited Sb2Te3 thinfilm deposited at −0.15V vs. SCE at room temperature was approximately 118µV/K at room temperature, which is similarto bulk counterparts.

We investigated tribological characteristics of diamond-like carbon (DLC) in a condition with carbon nanotube (CNT) content of 1wt% in aqueous solution. Si-DLC films were deposited by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) process on Al6061 aluminum alloy. In this study, the deposition of DLC films was carried out in vacuum with a chamber pressure of 10-5 to 10-3 Torr achieved by mechanical pump followed by turbo molecular pump. The surface adsorbed oxygen on the Aluminum substrates was removed by passing Ar gas for 10 minutes. The RF power was maintained at 500W throughout the experiment. A buffer layer of HMDSO was deposited on the substrate to improve the adhesion of DLC coating. At this point CH4 gas was introduced in the chamber using gas flow controller and DLC coating was deposited on the buffer layer along with HMDSO for 50 min. The thickness of 1 μm was obtained for DLC films on aluminum substrates The tribological properties of as synthesized DLC films were analyzed by wear test in the presence of dry air, water and lubricant such as CNT ink.

The microstructure and Cu diffusion barrier property of Ta-Si-N films for various Si and N compositions were studied. Ta-Si-N films of a wide range of compositions (Si: 0~30 at.%, N: 0~55 at.%) were deposited by DC magnetron reactive sputtering of Ta and Si targets. Deposition rates of Ta and Si films as a function of DC target current density for various N2/(Ar+N2) flow rate ratios were investigated. The composition of Ta-Si-N films was examined by wavelength dispersive spectroscopy (WDS). The variation of the microstructure of Ta-Si-N films with Si and N composition was examined by X-ray diffraction (XRD). The degree of crystallinity of Ta-Si-N films decreased with increasing Si and N composition. The Cu diffusion barrier property of Ta-Si-N films with more than sixty compositions was investigated. The Cu(100 nm)/Ta-Si-N(30 nm)/Si structure was used to investigate the Cu diffusion barrier property of Ta-Si-N films. The microstructure of all Cu/Ta-Si-N/Si structures after heat treatment for 1 hour at various temperatures was examined by XRD. A contour map that shows the diffusion barrier failure temperature for Cu as a function of Si and N composition was completed. At Si compositions ranging from 0 to 15 at.%, the Cu diffusion barrier property was best when the composition ratio of Ta + Si and N was almost identical.

Mono- and few-layer graphenes were grown on Ni thin films by rapid-thermal pulse chemical vapor deposition technique. In the growth steps, the exposure step for 60 s in H2 (a flow rate of 10 sccm (standard cubic centimeters per minute)) atmosphere after graphene growth was specially established to improve the quality of the graphenes. The graphene films grown by exposure alone without H2 showed an intensity ratio of IG/I2D = 0.47, compared with a value of 0.38 in the films grown by exposure in H2 ambient. The quality of the graphenes can be improved by exposure for 60 s in H2 ambient after the growth of the graphene films. The physical properties of the graphene films were investigated for the graphene films grown on various Ni film thicknesses and on 260-nm thick Ni films annealed at 500 and 700˚C. The graphene films grown on 260-nm thick Ni films at 900˚C showed the lowest IG/I2D ratio, resulting in the fewest layers. The graphene films grown on Ni films annealed at 700˚C for 2 h showed a decrease of the number of layers. The graphene films were dependent on the thickness and the grain size of the Ni films.

전분필름의 물성에 미치는 고압균질 처리의 영향을 검토한 결과, 고압균질처리 옥수수전분필름은 산화전분필름과 유사한 투명도를 가지며, 용해도와 산소투과억제력의 증가와 함께 인장강도가 다소 높아지는 것을 확인하였다. 이러한 고압균질처리 옥수수전분필름의 물성변화는 고압균질기의 고압과 전단력에 의해 호화전분입자가 완전히 소실되고 전분의 용해도 증가와 보다 균일한 분산상이 형성되기 때문으로 판단되었다. 일반적인 호화과정을 통해 형성되는 전분필름의 구조는 연속상의 아밀로오스에 팽윤된 접분입자가 분산되어 있는 network 형태에서 형성된다. 반면 고압균질처리의 경우, 호화전분입자의 붕괴로 아밀로펙틴이 연속상을 이루고 여기에 아밀로오스가 분산상으로 존재하는 새로운 분산계(dispersed system)가 형성되어, 기존 호화 방법으로 제조한 필름과 다른 물성을 나타내는 것으로 판단되었다.

This paper describes the fabrication of AlN thin films containing iron and iron nitride particles, and the magnetic and electrical properties of such films. Fe-N-Al alloy films were deposited in Ar and N2 mixtures at ambient temperature using Fe/Al composite targets in a two-facing-target DC sputtering system. X-ray diffraction results showed that the Fe-N-Al films were amorphous, and after annealing for 5 h both AlN and bcc-Fe/bct-FeNx phases appeared. Structure changes in the FeNx phases were explained in terms of occupied nitrogen atoms. Electron diffraction and transmission electron microscopy observations revealed that iron and iron nitride particles were randomly dispersed in annealed AlN films. The grain size of magnetic particles ranged from 5 to 20 nm in diameter depending on annealing conditions. The saturation magnetization as a function of the annealing time for the Fe55N20Al25 films when annealed at 573, 773 and 873 K. At these temperatures, the amount of iron/iron nitride particles increased with increasing annealing time. An increase in the saturation magnetization is explained qualitatively in terms of the amount of such magnetic particles in the film. The resistivity increased monotonously with decreasing Fe content, being consistent with randomly dispersed iron/iron nitride particles in the AlN film. The coercive force was evaluated to be larger than 6.4×103Am-1 (80 Oe). This large value is ascribed to a residual stress restrained in the ferromagnetic particles, which is considered to be related to the present preparation process.

Most TCOs such as ITO, AZO(Al-doped ZnO), FTO(F-doped SnO2) etc., which have been widely used in LCD,touch panel, solar cell, and organic LEDs etc. as transparent electrode material reveal n-type conductivity. But in order to realizetransparent circuit, transparent p-n junction, and introduction of transparent p-type materials are prerequisite. Additionalprerequisite condition is optical transparency in visible spectral region. Oxide based materials usually have a wide optical band-gap more than ~3.0eV. In this study, single-phase transparent semiconductor of SrCu2O2, which shows p-type conductivity, havebeen synthesized by 2-step solid state reaction at 950oC under N2 atmosphere, and single-phase SrCu2O2 thin films of p-typeTCOs have been deposited by RF magnetron sputtering on alkali-free glass substrate from single-phase target at 500oC, 1%H2/(Ar+H2) atmosphere. 3% H2/(Ar+H2) resulted in formation of second phases. Hall measurements confirmed the p-typenature of the fabricated SrCu2O2 thin films. The electrical conductivity, mobility of carrier and carrier density 5.27×10−2S/cm,2.2cm2/Vs, 1.53×1017/cm3 a room temperature, respectively. Transmittance and optical band-gap of the SrCu2O2 thin filmsrevealed 62% at 550nm and 3.28eV. The electrical and optical properties of the obtained SrCu2O2 thin films deposited by RFmagnetron sputtering were compared with those deposited by PLD and e-beam.

Cu(In,Ga)Se2(CIGS) photovoltaic thin films were electrodeposited on Mo/glass substrates with an aqueous solution containing 2 mM CuCl2, 8 mM InCl3, 20 mM GaCl3 and 8mM H2SeO3 at the electrodeposition potential of -0.6 to -1.0 V(SCE) and pH of 1.8. The best chemical composition of Cu1.05In0.8Ga0.13Se2 was found to be achieved at -0.7 V(SCE). The precursor Cu-In-Ga-Se films were annealed for crystallization to chalcopyrite structure at temperatures of 100-500˚C under Ar gas atmosphere. The chemical compositions, microstructures, surface morphologies, and crystallographic structures of the annealed films were analyzed by EPMA, FE-SEM, AFM, and XRD, respectively. The precursor Cu-In-Ga-Se grains were grown sparsely on the Mo-back contact and also had very rough surfaces. However, after annealing treatment beginning at 200˚C, the empty spaces between grains were removed and the grains showed well developed columnar shapes with smooth surfaces. The precursor Cu-In-Ga-Se films were also annealed at the temperature of 500˚C for 60 min under Se gas atmosphere to suppress the Se volatilization. The Se amount on the CIGS film after selenization annealing increased above the Se amount of the electrodeposited state and the MoSe2 phase occurred, resulting from the diffusion of Se through the CIGS film and interaction with Mo back electrode. However, the selenization-annealed films showed higher crystallinity values than did the films annealed under Ar atmosphere with a chemical composition closer to that of the electrodeposited state.

ZnO thin films were prepared on a glass substrate by radio frequency (RF) magnetron sputtering without intentional substrate heating and then surfaces of the ZnO films were irradiated with intense electrons in vacuum condition to investigate the effect of electron bombardment on crystallization, surface roughness, morphology and hydrogen gas sensitivity. In XRD pattern, as deposited ZnO films show a higher ZnO (002) peak intensity. However, the peak intensity for ZnO (002) is decreased with increase of electron bombarding energy. Atomic force microscope images show that surface morphology is also dependent on electron bombarding energy. The surface roughness increases due to intense electron bombardment as high as 2.7 nm. The observed optical transmittance means that the films irradiated with intense electron beams at 900 eV show lower transmittance than the others due to their rough surfaces. In addition, ZnO films irradiated by the electron beam at 900 eV show higher hydrogen gas sensitivity than the films that were electron beam irradiated at 450 eV. From XRD pattern and atomic force microscope observations, it is supposed that intense electron bombardment promotes a rough surface due to the intense bombardments and increased gas sensitivity of ZnO films for hydrogen gas. These results suggest that ZnO films irradiated with intense electron beams are promising for practical high performance hydrogen gas sensors.