We analyzed the effect of etchants for metal catalysts in terms of the characteristics of resulting graphene films, such as sheet resistance, hall mobility, transmittance, and carrier concentration. We found the residue of FeCl3 etchant degraded the sheet resistance and mobility of graphene films. The residue was identified as an iron oxide containing a small amount of Cl through elemental analysis using X-ray photoelectron spectroscopy. To remove this residue, we provide an alternative etching solution by introducing acidic etching solutions and their combinations (HNO3, HCl, FeCl3 + HCl, and FeCl3+HNO3). The combination of FeCl3 and acidic solutions (HCl and HNO3) resulted in more enhanced electrical properties than pure etchants, which is attributed to the elimination of left over etching residue, and a small amount of amorphous carbon debris after the etching process.

완전 생분해성 고분자 블렌드필름을 제조하기 위하여 치환도가 다른 두 셀룰로오스 아세테이트(CA)에 5 - 50%의 저분자량 폴리락타이드(PLA)를 블렌딩하였다. 이 때 사용된 각각의 고분자는 10% 메탄올/메틸렌클로라이드 혼합용제에 녹여서 점도가 같은 조건의 농도로 제조하였다. 각 조성의 블렌드필름의 표면 모폴로지와 열적 성질, 기계적 성질을 조사하였다. 화학적 구조는 적외선 분광법으로 확인하였으며, 전자현미경을 통한 표면 분석 결과 5% 이하의 폴리락타이드를 함유한 블렌드필름은 상분리가 거의 일어나지 않았으며 20% 이상이 함유된 경우 상분리가 매우 심각하였다. 또한 블렌드필름의 인장강도는 셀룰로오스 아세테이트의 함량이 늘어날수록 TAC/PLA의 경우 820kgf/cm2 및 DAC/PLA의 경우 600kgf/cm2까지 향상시킬 수 있었다.

In2O3 films were deposited by RF magnetron sputtering on a glass substrate and then the effect of post depositionannealing in nitrogen atmosphere on the structural, optical and electrical properties of the films was investigated. Afterdeposition, the annealing process was conducted for 30 minutes at 200 and 400oC. XRD pattern analysis showed that the asdeposited films were amorphous. When the annealing temperature reached 200-400oC, the intensities of the In2O3 (222) majorpeak increased and the full width at half maximum (FWHM) of the In2O3 (222) peak decreased due to the crystallization. Thefilms annealed at 400oC showed a grain size of 28nm, which was larger than that of the as deposited amorphous films. Theoptical transmittance in the visible wavelength region also increased, while the electrical sheet resistance decreased. In this study,the films annealed at 400oC showed the highest optical transmittance of 76% and also showed the lowest sheet resistance of89Ω/□. The figure of merit reached a maximum of 7.2×10−4Ω−1 for the films annealed at 400oC. The effect of the annealingon the work-function of In2O3 films was considered. The work-function obtained from annealed films at 400oC was 7.0eV. Thus,the annealed In2O3 films are an alternative to ITO films for use as transparent anodes in OLEDs.

The electrochromic properties of tungsten oxide films grown by RF sputtering were investigated. Among the sputter parameters, first the Ar:O2 ratios were controlled with division into only an O2 environment, 1:1 and 4:1. The structure of each film prepared by these conditions was studied by X-ray diffraction, X-ray photoelectron spectroscopy and Rutherford backscattering spectroscopy. The sputter-deposited tungsten oxide films had an amorphous structure regardless of the Ar:O2 ratios. The chemical compositions, however, were different from each other. The stoichiometric structure and low-density film was obtained at higher O2 contents. Electrochemical tests were performed by cyclic voltammetry and chronoamperometry at 0.05 M H2SO4 solutions. The current density and charge ratio was estimated during the continuous potential and pulse potential cycling at -0.5 V and 1.8 V, respectively. The film grown in a higher oxygen environment had a higher current density and a reversible charge reaction during intercalation and deintercalation. The in-situ transmittance tests were performed by He-Ne laser (633 nm). At higher oxygen contents, a big transmittance difference was observed but the response speed was too slow. This was likely caused by higher film resistivity. Furthermore, the effect of sputtering pressure was also investigated. The structure and surface morphology of each film was observed by X-ray diffraction and scanning electron microscopy. A rough surface was observed at higher sputtering pressure, and this affected the higher transmittance difference and coloration efficiency.

We report growth of epitaxial AlN thin films on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. To achieve two-dimensional growth the substrates were nitrided by nitrogen plasma prior to the AlN growth, which resulted in the formation of a two-dimensional single crystalline AlN layer. The formation of the two-dimensional AlN layer by the nitridation process was confirmed by the observation of streaky reflection high energy electron diffraction (RHEED) patterns. The growth of AlN thin films was performed on the nitrided AlN layer by changing the Al beam flux with the fixed nitrogen flux at 860˚C. The growth mode of AlN films was also affected by the beam flux. By increasing the Al beam flux, two-dimensional growth of AlN films was favored, and a very flat surface with a root mean square roughness of 0.196 nm (for the 2 μm × 2 μm area) was obtained. Interestingly, additional diffraction lines were observed for the two-dimensionally grown AlN films, which were probably caused by the Al adlayer, which was similar to a report of Ga adlayer in the two-dimensional growth of GaN. Al droplets were observed in the sample grown with a higher Al beam flux after cooling to room temperature, which resulted from the excessive Al flux.

We report the structural characterization of BixZn1-xO thin films grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. By increasing the Bi flux during the growth process, BixZn1-xO thin films with various Bi contents (x = 0~13.17 atomic %) were prepared. X-ray diffraction (XRD) measurements revealed the formation of Bi-oxide phase in (Bi)ZnO after increasing the Bi content. However, it was impossible to determine whether the formed Bi-oxide phase was the monoclinic structure α-Bi2O3 or the tetragonal structure β-Bi2O3 by means of XRD θ-2θ measurements, as the observed diffraction peaks of the 2θ value at ~28 were very close to reflection of the (012) plane for the monoclinic structure α-Bi2O3 at 28.064 and the reflection of the (201) plane for the tetragonal structure β-Bi2O3 at 27.946. By means of transmission electron microscopy (TEM) using a diffraction pattern analysis and a high-resolution lattice image, it was finally determined as the monoclinic structure α-Bi2O3 phase. To investigate the distribution of the Bi and Bi-oxide phases in BiZnO films, elemental mapping using energy dispersive spectroscopy equipped with TEM was performed. Considering both the XRD and the elemental mapping results, it was concluded that hexagonal-structure wurtzite BixZn1-xO thin films were grown at a low Bi content (x = ~2.37 atomic %) without the formation of α-Bi2O3. However, the increased Bi content (x = 4.63~13.17 atomic %) resulted in the formation of the α-Bi2O3 phase in the wurtzite (Bi)ZnO matrix.

La0.6Sr0.4MnO3 (LSMO) thin films, which are known as colossal magnetoresistance materials, were prepared on fused silica thin films by conventional RF magnetron sputtering, and the interfacial reactions between them were investigated by rapid thermal processing. Various analyses, namely, X-ray diffraction, transmission electron microscopy combined with energy adispersive X-ray spectrometry, and secondary ion mass spectrometry, were performed to explain the mechanism of the interfacial reactions. In the case of an LSMO film annealed at 800˚C, the layer distinction against the underplayed SiO2 was well preserved. However, when the annealing temperature was raised to 900˚C, interdiffusion and interreaction occurred. Most of the SiO2 and part of the LSMO became amorphous silicate that incorporated La, Sr, and Mn and contained a lot of bubbles. When the annealing temperature was raised to 950˚C, the whole stack became an amorphous silicate layer with expanded bubbles. The thermal instability of LSMO on fused silica should be an important consideration when LSMO is integrated into Si-based solid-state devices.

The CdS thin film used as a window layer in the CdTe thin film solar cell transports photo-generated electrons to the front contact and forms a p-n junction with the CdTe layer. This is why the electrical, optical, and surface properties of the CdS thin film influence the efficiency of the CdTe thin film solar cell. When CdTe thin film solar cells are fabricated, a heat treatment is done to improve the qualities of the CdS thin films. Of the many types of heat treatments, the CdCl2 heat treatment is most widely used because the grain size in CdS thin films increases and interdiffusion between the CdS and the CdTe layer is prevented by the heat treatment. To investigate the changes in the electrical, optical, and surface properties and the crystallinity of the CdS thin films due to heat treatment, CdS thin films were deposited on FTO/glass substrates by the rf magnetron sputtering technique, and then a CdCl2 heat treatment was carried out. After the CdCl2 heat treatment, the clustershaped grains in the CdS thin film increased in size and their boundaries became faint. XRD results show that the crystallinity improved and the crystalline size increased from 15 to 42 nm. The resistivity of the CdS single layer decreased from 3.87 to 0.26 Ωcm, and the transmittance in the visible region increased from 64% to 74%.

Transparent conducting oxides (TCOs) used in the antireflection layer and current spreading layer of heterojunction solar cells should have excellent optical and electrical properties. Furthermore, TCOs need a high work function over 5.2 eV to prevent the effect of emitter band-bending caused by the difference in work function between emitter and TCOs. Sn-doped In2O3 (ITO) film is a highly promising material as a TCO due to its excellent optical and electrical properties. However, ITO films have a low work function of about 4.8 eV. This low work function of ITO films leads to deterioration of the conversion efficiency of solar cells. In this work, ITO films with various Zn contents of 0, 6.9, 12.7, 28.8, and 36.6 at.% were fabricated by a co-sputtering method using ITO and AZO targets at room temperature. The optical and electrical properties of Zn-doped ITO thin films were analyzed. Then, silicon heterojunction solar cells with these films were fabricated. The 12.7 at% Zn-doped ITO films show the highest hall mobility of 35.71 cm2/Vsec. With increasing Zn content over 12.7, the hall mobility decreases. Although a small addition of Zn content increased the work function, further addition of Zn content over 12.7 at.% led to decreasing electrical properties because of the decrease in the carrier concentration and hall mobility. Silicon heterojunction solar cells with 12.7 at% Zn-doped ITO thin films showed the highest conversion efficiency of 15.8%.

Cu(In, Ga)Se2 (CIGS) precursor films were electrodeposited on Mo/glass substrates in acidic solutions containingCu2+, In3+, Ga3+, and Se4+ ions at −0.6V (SCE) and pH 1.8. In order to induce recrystallization, the electrodepositedCu1.00In0.81Ga0.09Se2.08 (25.0at.% Cu+20.2at.% In+2.2at.% Ga+52.0at.% Se) precursor films were annealed under a highSe gas atmosphere for 15, 30, 45, and 60 min, respectively, at 500oC. The Se amount in the film increased from 52at.% to62at.%, whereas the In amount in the film decreased from 20.8at.% to 9.1at.% as the annealing time increased from 0 (as-deposited state) to 60 min. These results were attributed to the Se introduced from the furnace atmosphere and reacted withthe In present in the precursor films, resulting in the formation of the volatile In2Se. CIGS precursor grains with a cauliflowershape grew as larger grains with the CuSe2 and/or Cu2-xSe faceted phases as the annealing times increased. These faceted phasesresulted in rough surface morphologies of the CIGS films. Furthermore, the CIGS layers were not dense because the emptyspaces between the grains were not removed via annealing. Uniform thicknesses of the MoSe2 layers occurred at the 45 and60 min annealing time. This implies that there was a stable reaction between the Mo back electrode and the Se diffused throughthe CIGS film. The results obtained in the present research were sufficiently different from comparable studies where therecrystallization annealing was performed under an atmosphere of Ar gas only or a low Se gas pressure.

We present the effect of a coupling agent on the optoelectrical properties of few-walled carbon nanotube (FWCNT)/epoxy resin hybrid films fabricated on glass substrates. The FWCNT/epoxy resin mixture solution was successfully prepared by the direct mixing of a HNO3-treated FWCNT solution and epoxy resin. FWCNT/binder hybrid films containing different amounts of the coupling agent were then fabricated on UV-ozone-treated glass substrates. To determine the critical binder content (Xc), the effects of varying the binder content in the FWCNT/silane hybrid films on their optoelectrical properties were investigated. In this system, the Xc value was approximately 75 wt%. It was found that above Xc, the coupling agent effectively decreased the sheet resistance of the films. From microscopy images, it was observed that by adding the coupling agent, more uniform FWCNT/binder films were formed.

Displacement current measuring technique has been applied on the study of polyamic acid monolayer containing p-nitroazobenzene. The displacement current was generated from monolayer on the water surface by monolayer compression and expansion. Maxwell displacement current(MDC) was generated when the area per molecule was about 200a2 and 70a2. Maxwell displacement currents were investigated in connection with monolayer compression cycles. It was found that the maximum of MDC appeared at the molecular area just before the initial rise of surface pressure in compression cycles. The monolayer surface morphology of the LB film have been measured by Atomic Force Microscope(AFM). As a result, we confirmed that the microscopic properties of LB film by AFM showed the good orientation of monolayer molecules and the thickness of monolayer was 3.5-4.1nm.

원자전달 라디칼 중합(ATRP)에 의해 poly(vinyl chloride) (PVC) 주사슬과 poly(styrene sulfonic acid) (PSSA) 곁사슬로 되어있는 양쪽성 PVC-g-PSSA 가지형 공중합체를 합성하였다. PVC-g-PSSA 가지형 공중합체 고분자를 템플레이트로 사용하고 졸겔법을 적용하여, 결정성 아타네제상의 미세기공 이산화티타튬 필름을 제조하였다. TiO2 전구체인 TTIP를 친수성인 PSSA 영역과 선택적으로 작용시켜 TiO2 메조기공 필름을 성장하였으며, 이를 주사전자 현미경 (SEM)과 엑스레이회절 (XRD)분석을 통해 분석하였다. 스핀코팅 횟수와 P25 도입에 따른 염료감응 태양전지 성능을 체계적으로 분석하였다. 그 결과 준고체 고분자 전해질을 이용하였을 때, 100 mW/㎠ 조건에서 에너지 변환 효율이 2.7%에 이르렀다.

캐나다까지 장거리 수출조건은 선적 후 통관까지 20일 동안은 7±1℃와 90% 상대습도가 유지되었고, 이후 저장창고 이송전에 3시간만에 13℃까지 상승한 후 저장창고 이송후 3일간 3~4℃와 90% 상대습도를 나타내었다. 이후 상온조건의 판매소에서는 16℃에 60% 이하의 상대습도를 나타내었다. 이상의 유통조건을 기초로 7℃, 90% 상대습도에서 15일간 저장한 후 20℃, 55% 상대습도에서 7일간 저장하는 조건에서 MA저장 실험을 실시하였다. 포장방법에는 무처리와 기존의 유공포장(6mm 직경의 구멍이 18holes/m2) 그리고 레이저로 가공한 3가지 비천공 필름 (산소 투과도 5,000과 20,000 그리고 100,000cc/m2·day·atm)로 하였다. 저장 중 생체중 감소는 3가지에서는 1% 이하였으나, 유공처리과 무처리는 4% 이상으로 품질 저하가 나타났다. 상온으로 이동한 저장 15일 후 포장재내 대기조성이 5,000cc/m2·day·atm비천공필름처리는 산소 5%, 이산화탄소 15%를 나타내었고, 20,000cc/m2·day·atm 비천공필름처리는 산소 16%, 이산화탄소 4~5%를 나타내어, 이들처리에서는 이산화탄소 농도가 파프리카의 적정 범위를 상회하였다. 포장재내 에틸렌 농도는 처리간 큰차이가 없었다. 저장 중 외관상 품질은 이산화탄소 농도가 적절하게 유지되었던 100,000cc/m2·day·atm 비천공필름처리에서 가장 높게 유지되었으며, 경도와 당도는 비천공 필름간 차이에 통계적 유의성은 없었다. 이상의 결과로 보아 20일 이상의 장기 유통 중 판매가 상온에서 이루어질 경우 포장내 이산화탄소 농도가 3% 이하로 유지될 수 있는 100,000cc/m2·day·atm의 통기성을 가장 포장재가 파프리카 MAP에 적합하다고 사료된다.

Negative temperature coefficient (NTC) materials have been widely studied for industrial applications, such assensors and temperature compensation devices. NTC thermistor thick films of Ni1+xMn2-xO4+δ (x=0.05, 0, −0.05) werefabricated on a glass substrate using the aerosol deposition method at room temperature. Resistance verse temperature (R-T)characteristics of the as-deposited films showed that the B constant ranged from 3900 to 4200 K between 25oC and 85oCwithout heat treatment. When the film was annealed at 600oC 1h, the resistivity of the film gradually decreased due tocrystallization and grain growth. The resistivity and the activation energy of films annealed at 600oC for 1 h were 5.203, 5.95,and 4.772KΩ·cm and 351, 326, and 299meV for Ni0.95Mn2.05O4+δ, NiMn2O4, and Ni1.05Mn1.95O4+δ, respectively. The annealingprocess induced insulating Mn2O3 in the Ni deficient Ni0.95Mn2.05O4+δ composition resulting in large resistivity and activationenergy. Meanwhile, excess Ni in Ni1.05Mn1.95O4+δ suppressed the abnormal grain growth and changed Mn3+ to Mn4+, givinglower resistivity and activation energy.

This paper has relatively high technical standard and experimental skill. The fabrication of TCO film with hightransparency, low resistance and low chromaticity require exact control of several competing factors. This paper has resolvedthese problems reasonably well, thus recommended for publication. Indium tin oxide(ITO) thin films were by D.C. magnetronroll-to-roll sputter system utilizing ITO and SiO2 targets of ITO and SiO2. In this experiment, the effect of D.C. power, windingspeed, and oxygen flow rate on electrical and optical properties of ITO thin films were investigated from the view point ofsheet resistance, transmittance, and chromaticity(b*). The deposition of SiO2 was performed with RF power of 400W, Ar gasof 50sccm and the deposition of ITO, DC power of 600W, Ar gas of 50sccm, O2 gas of 0.2sccm, and winding speed of 0.56m/min. High quality ITO thin films without SiO2 layer had chromaticity of 2.87, sheet resistivity of 400ohm/square, and trans-mittance of 88% and SiO2-doped ITO Thin film with chromaticity of 2.01, sheet resistivity of 709ohm/square, and transmittanceof more than 90% were obtained. As a result, SiO2 was coated on PET before deposition of ITO, their chromaticity(b*) andtransmittance were better than previous results of ITO films. These results show that coating of SiO2 induced arisingchromaticity(b*) and transmittance. If the thickness of SiO2 is controlled, sheet resistance value of ITO film will be expected tobe better for touch screen. A four point probe and spectrophotometer are used to investigate the properties of ITO thin films.

Polysilazane and silazane-based precursor films were deposited on stacked TiN/Ti/TEOS/Si-substrate by spin-coating, then annealed at 150~400oC, integrated further to form the top electrode and pad, and finally characterized. Theprecursor solutions were composed of 20% perhydro-polysilazane (SiH2NH)n, and 20% hydropolymethyl silazane(SiHCH3NH)n in dibutyl ether. Annealing of the precursor films led to the compositional change of the two chemicals intosilicon (di)oxides, which was confirmed by Fourier transform infrared spectroscopy (FTIR) spectra. It is thought that thedifferent results that were obtained originated from the fact that the two precursors, despite having the same synthetic routeand annealing conditions, had different chemical properties. Electrical measurement indicated that under 0.6MV/cm, a largercapacitance of 2.776×10−11 F and a lower leakage current of 0.4pA were obtained from the polysilazane-based dielectric films,as compared to 9.457×10−12 F and 2.4pA from the silazane-based film, thus producing a higher dielectric constant of 5.48compared to 3.96. FTIR indicated that these superior electrical properties are directly correlated to the amount of Si-O bondsand the improved chemical bonding structures of the spin-on dielectric films, which were derived from a precursor without C.The chemical properties of the precursor films affected both the formation and the electrical properties of the spin-on dielectricfilm.

The electro-deposition of compound semiconductors has been attracting more attention because of its ability torapidly deposit nanostructured materials and thin films with controlled morphology, dimensions, and crystallinity in a cost-effective manner (1). In particular, low band-gap A2B3-type chalcogenides, such as Sb2Te3 and Bi2Te3, have been extensivelystudied because of their potential applications in thermoelectric power generator and cooler and phase change memory.Thermoelectric SbxTey films were potentiostatically electrodeposited in aqueous nitric acid electrolyte solutions containingdifferent ratios of TeO2 to Sb2O3. The stoichiometric SbxTey films were obtained at an applied voltage of −0.15V vs. SCE usinga solution consisting of 2.4mM TeO2, 0.8mM Sb2O3, 33mM tartaric acid, and 1M HNO3. The stoichiometric SbxTey filmshad the rhombohedral structure with a preferred orientation along the [015] direction. The films featured hole concentrationand mobility of 5.8×1018/cm3 and 54.8cm2/V·s, respectively. More negative applied potential yielded more Sb content in thedeposited SbxTey films. In addition, the hole concentration and mobility decreased with more negative deposition potential andfinally showed insulating property, possibly due to more defect formation. The Seebeck coefficient of as-deposited Sb2Te3 thinfilm deposited at −0.15V vs. SCE at room temperature was approximately 118µV/K at room temperature, which is similarto bulk counterparts.

We investigated tribological characteristics of diamond-like carbon (DLC) in a condition with carbon nanotube (CNT) content of 1wt% in aqueous solution. Si-DLC films were deposited by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) process on Al6061 aluminum alloy. In this study, the deposition of DLC films was carried out in vacuum with a chamber pressure of 10-5 to 10-3 Torr achieved by mechanical pump followed by turbo molecular pump. The surface adsorbed oxygen on the Aluminum substrates was removed by passing Ar gas for 10 minutes. The RF power was maintained at 500W throughout the experiment. A buffer layer of HMDSO was deposited on the substrate to improve the adhesion of DLC coating. At this point CH4 gas was introduced in the chamber using gas flow controller and DLC coating was deposited on the buffer layer along with HMDSO for 50 min. The thickness of 1 μm was obtained for DLC films on aluminum substrates The tribological properties of as synthesized DLC films were analyzed by wear test in the presence of dry air, water and lubricant such as CNT ink.

The microstructure and Cu diffusion barrier property of Ta-Si-N films for various Si and N compositions were studied. Ta-Si-N films of a wide range of compositions (Si: 0~30 at.%, N: 0~55 at.%) were deposited by DC magnetron reactive sputtering of Ta and Si targets. Deposition rates of Ta and Si films as a function of DC target current density for various N2/(Ar+N2) flow rate ratios were investigated. The composition of Ta-Si-N films was examined by wavelength dispersive spectroscopy (WDS). The variation of the microstructure of Ta-Si-N films with Si and N composition was examined by X-ray diffraction (XRD). The degree of crystallinity of Ta-Si-N films decreased with increasing Si and N composition. The Cu diffusion barrier property of Ta-Si-N films with more than sixty compositions was investigated. The Cu(100 nm)/Ta-Si-N(30 nm)/Si structure was used to investigate the Cu diffusion barrier property of Ta-Si-N films. The microstructure of all Cu/Ta-Si-N/Si structures after heat treatment for 1 hour at various temperatures was examined by XRD. A contour map that shows the diffusion barrier failure temperature for Cu as a function of Si and N composition was completed. At Si compositions ranging from 0 to 15 at.%, the Cu diffusion barrier property was best when the composition ratio of Ta + Si and N was almost identical.