Titanium dioxide thin films were fabricated as hydrogen sensors and its sensing properties were tested. The titanium was deposited on a SiO2/Si substrate by the DC magnetron sputtering method and was oxidized at an optimized temperature of 850˚C in air. The titanium film originally had smooth surface morphology, but the film agglomerated to nano-size grains when the temperature reached oxidation temperature where it formed titanium oxide with a rutile structure. The oxide thin film formed by grains of tens of nanometers size also showed many short cracks and voids between the grains. The response to 1% hydrogen gas was ~2×106 at the optimum sensing temperature of 200˚C, and ~103 at room temperature. This extremely high sensitivity of the thin film to hydrogen was due partly to the porous structure of the nano-sized sensing particles. Other sensor properties were also examined.

Changes in the surface morphology and light scattering of textured Al doped ZnO thin films on glasssubstrates prepared by rf magnetron sputtering were investigated. As-deposited ZnO:Al films show a hightransmittance of above 80% in the visible range and a low electrical resistivity of 4.5×10-4Ω·cm. The surfacemorphology of textured ZnO:Al films are closely dependent on the deposition parameters of heater temperature,working pressure, and etching time in the etching process. The optimized surface morphology with a cratershape is obtained at a heater temperature of 350oC, working pressure of 0.5 mtorr, and etching time of 45seconds. The optical properties of light transmittance, haze, and angular distribution function (ADF) aresignificantly affected by the resulting surface morphologies of textured films. The film surfaces, havinguniformly size-distributed craters, represent good light scattering properties of high haze and ADF values.Compared with commercial Asahi U (SnO2:F) substrates, the suitability of textured ZnO:Al films as frontelectrode material for amorphous silicon thin film solar cells is also estimated with respect to electrical andoptical properties.

Silicon dioxide as gate dielectrics was grown at 400˚C on a polycrystalline Si substrate by inductively coupled plasma oxidation using a mixture of O2 and N2O to improve the performance of polycrystalline Si thin film transistors. In conventional high-temperature N2O annealing, nitrogen can be supplied to the Si/SiO2 interface because a NO molecule can diffuse through the oxide. However, it was found that nitrogen cannot be supplied to the Si/SiO2 interface by plasma oxidation as the N2O molecule is broken in the plasma and because a dense Si-N bond is formed at the SiO2 surface, preventing further diffusion of nitrogen into the oxide. Nitrogen was added to the Si/SiO2 interface by the plasma oxidation of mixtures of O2/N2O gas, leading to an enhancement of the field effect mobility of polycrystalline Si TFTs due to the reduction in the number of trap densities at the interface and at the Si grain boundaries due to nitrogen passivation.

Indium Gallium Zinc Oxide (IGZO) thin films were deposited onto 300 nm-thick oxidized Si substrates and glass substrates by direct current (DC) magnetron sputtering of IGZO targets at room temperature. FESEM and XRD analyses indicate that non-annealed and annealed IGZO thin films exhibit an amorphous structure. To investigate the effect of an annealing treatment, the films were thermally treated at 300˚C for 1hr in air. The IGZO TFTs structure was a bottom-gate type in which electrodes were deposited by the DC magnetron sputtering of Ti and Au targets at room temperature. The non-annealed and annealed IGZO TFTs exhibit an Ion/Ioff ratio of more than 105. The saturation mobility and threshold voltage of nonannealed IGZO TFTs was 4.92×10-1cm2/V·s and 1.46V, respectively, whereas these values for the annealed TFTs were 1.49×10-1cm2/V· and 15.43V, respectively. It is believed that an increase in the surface roughness after an annealing treatment degrades the quality of the device. The transmittances of the IGZO thin films were approximately 80%. These results demonstrate that IGZO thin films are suitable for use as transparent thin film transistors (TTFTs).

Electrical properties of multi-channel metal-induced unilaterally precrystallized polycrystalline silicon thin-film transistor (MIUP poly-Si TFT) devices and circuits were investigated. Although their structure was integrated into small area, reducing annealing process time for fuller crystallization than that of conventional crystal filtered MIUP poly-Si TFTs, the multi-channel MIUP poly-Si TFTs showed the effect of crystal filtering. The multi-channel MIUP poly-Si TFTs showed a higher carrier mobility of more than 1.5 times that of the conventional MIUP poly-Si TFTs. Moreover, PMOS inverters consisting of the multi-channel MIUP poly-Si TFTs showed high dynamic performance compared with inverters consisting of the conventional MIUP poly-Si TFTs.

본 논문에서는 용액 공정을 이용한 고분자 절연층을 갖는 top-gate 구조의 펜타센 박막 트랜지스터(Thin Film Transistor, TFT)의 특성을 연구하였다. Top-gate 구조의 펜타센 TFT 제작에 앞서 유기 반도체인 펜타센의 결정성 성장을 돕기 위해서 가교된 PVP (cross-linked poly(4-vinylphenol))를 유리 기판 상에 스핀 코팅을 이용하여 형성한 후, 노광 공정을 통해 니켈/은 구조를 갖는 채널 길이 10μm의 소오스, 드레인 전극을 형성하였다. 그리고 열 증착을 이용하여 60 nm 두께의 펜타센 층을 성막하였고, 고분자 절연체로서 PVA(polyvinyl alchol) 또는 가교된 PVA를 용액공정인 스핀 코팅을 이용하여 형성한 후 열 증착으로 알루미늄 게이트 전극을 성막하였다. 이로써 제작된 소자들의 전기적 특성을 확인한 결과 가교된 PVA를 사용한 펜타센 TFT 보다 PVA를 게이트 절연체로 사용한 소자가 전기적 특성이 우수한 것으로 관찰되었다. 이는 PVA의 가교 공정에 의한 펜타센 박막의 성능 퇴화에 기인한 것으로 사료된다. 실험 결과 0.9μm 두께의 PVA 게이트 절연막을 사용한 top-gate 구조의 펜타센 TFT의 전계 효과 이동도와 문턱전압, 그리고 전류 점멸비는 각각, 약 3.9×10-3 cm2/Vs, -11.5 V, 3×105으로써 본 연구에서 제안된 소자가 용액 공정형 top-gate 유기 TFT 소자로서 우수한 성능을 나타냄을 알 수 있었다.

Single crystal ZnIn2S4 layers were grown on thoroughly etched semi-insulating GaAs(100) substrateat 450oC with hot wall epitaxy (HWE) system by evaporating ZnIn2S4 source at 610oC. The crystalline structureof the single crystal thin films was investigated by the photoluminescence (PL) and double crystal X-ray rockingcurve (DCRC). The temperature dependence of the energy band gap of the ZnIn2S4 obtained from theabsorption spectra was well described by the Varshni’s relation, Eg(T)=2.9514eV-(7.24×10−4eV/K)T2/(T＋489K). After the as-grown ZnIn2S4 single crystal thin films were annealed in Zn-, S-, and In-atmospheres, theorigin of point defects of ZnIn2S4 single crystal thin films has been investigated by the photoluminescence (PL)at 10K. The native defects of VZn, VS, Znint, and Sint obtained by PL measurements were classified as a donorsor acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted ZnIn2S4 singlecrystal thin films to an optical p-type. Also, we confirmed that In in ZnIn2S4/GaAs did not form the nativedefects because In in ZnIn2S4 single crystal thin films existed in the form of stable bonds.

In this paper, a novel non-vacuum technique is described for the fabrication of a CuInSe2 (CIS) absorber layer for thin film solar cells using a low-cost precursor solution. A solution containing Cu- and Inrelated chemicals was coated onto a Mo/glass substrate using the Doctor blade method and the precursor layer was then selenized in an evaporation chamber. The precursor layer was found to be composed of CuCl crystals and amorphous In compound, which were completely converted to chalcopyrite CIS phase by the selenization process. Morphological, crystallographic and compositional analyses were performed at each step of the fabrication process by SEM, XRD and EDS, respectively.

A ZrO2 coating solution containing ZrO2 photo-catalysis, which is transparent in visible light, was prepared by the hydrolysis of alkoxide, and thin films on the SiO2 glass substrate were formed in a dipcoating method. These thin films were heat-treated at temperatures ranging from 250˚C-800˚C and their characteristics were subjected to thermal analysis, XRD, spectrometry, SEM, EDS, contact angle measurement, and AFM. Tetragonal ZrO2 phase was found in the thin film heat treated at 450˚C, and anatase TiO2 phase was detected in the thin film heat-treated at 600˚C and above. The thickness of the films was approximately 300 nm, and the roughness was 0.66 nm. Thus, the film properties are excellent. The films are super hydrophilic with a contact angle of 4.0˚; moreover, they have self-cleaning effect due to the photo catalytic property of anatase TiO2.

A carbon nanotube (CNT) of diameter ~20 nm has been synthesized by spray pyrolysis of turpentine oil using Ni/Fe catalyst. Pellet of CNTs has been used as a target to produce semiconducting carbon thin film of band gap 1.4 eV. Presence of oxygen pressure in the pulse laser deposition (PLD) chamber helped to control the sp3/sp2 ratio to achieve the desired band gap. Results are discussed with the help of Raman spectra, SEM TEM micrographs and optical measurements suggest that semiconducting carbon thin film deposited by PLD technique has retained its nanotubes structure except that its diameter has increased from 20 nm to 150 nm.

일반적으로 고전적인 탄성이론에서 매크로 스케일의 구조물의 물성은 구조물의 사이즈에 영향을 받지 않는다. 그 이유는 구조물 전체 체적에 대한 표면의 비율이 매우 작기 때문에 표면의 효과를 무시할 수 있기 때문이다. 그러나, 구조물 전체의 부피에 대한 표면의 비율이 커지게 되면 표면의 효과가 매우 중요한 역할을 하게 되며 지배적으로 나타나게 된다. 특히 나노 박막이나 나노 빔 등 나노 스케일의 구조물에서는 표면효과의 영향을 반드시 고려하여야만 한다. 분자 동역학 시뮬레이션은 이러한 나노 스케일의 구조물 역학적 해석을 위해서 그간 사용되어 온 일반적인 방법이었으나, 과도하게 요구되는 계산시간과 전산자원의 한계로 인해 여전히 수 나노 초 동안에 개의 원자들에 대한 시뮬레이션이 가능한 정도이다. 따라서 실제적으로 MEMS/NEMS 분야에서 사용되는 서브마이크 스케일에서 마이크로 스케일의 구조물의 분자동역학 시뮬레이션을 통한 해석은 가능하나 설계를 목적으로 했을 때는 현실적이지 못하다. 따라서 본 연구에서는 이러한 분자 동역학 시뮬레이션 기법의 단점을 보완하고자 나노 스케일의 매우 작은 구조물에서 지배적으로 나타나는 표면효과를 고려할 수 있는 연속체 기반의 모델을 제시하고자 한다. 특히 본 논문에서는 박막구조물의 해석을 위하여 고전적인 Kirchhoff 평판이론을 바탕으로 표면효과를 고려할 수 있도록 하는 연속체 모델을 제안하고 이를 바탕으로 유한요소해석을 수행하여 그 해석 결과를 분자 동역학 시뮬레이션 결과와 비교하였다.