Layered LiNi0.83Co0.11Mn0.06O2 cathode materials single- and dual-doped by the rare-earth elements Ce and Nd are successfully fabricated by using a coprecipitation-assisted solid-phase method. For comparison purposes, nondoping pristine LiNi0.83Co0.11Mn0.06O2 cathode material is also prepared using the same method. The crystal structure, morphology, and electrochemical performances are characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectrometer (EDS) mapping, and electrochemical techniques. The XRD data demonstrates that all prepared samples maintain a typical α-NaFeO2-layered structure with the R-3m space group, and that the doped samples with Ce and/or Nd have lower cation mixing than that of pristine samples without doping. The results of SEM and EDS show that doped elements are uniformly distributed in all samples. The electrochemical performances of all doped samples are better than those of pristine samples without doping. In addition, the Ce/Nd dualdoped cathode material shows the best cycling performance and the least capacity loss. At a 10 C-rate, the electrodes of Ce/Nd dual-doped cathode material exhibit good capacity retention of 72.7, 58.5, and 45.2% after 100, 200, and 300 cycles, respectively, compared to those of pristine samples without doping (24.4, 11.1, and 8.0%).

도핑이란 경기에 임하는 선수가 경기력 향상을 위하여 인위적으로 금지목록의 약물을 복용하거나 코치나 감독 등이 선수에게 이러한 금지약물을 투여하거나 금지방법을 사용하는 것을 말한다. 우리나라 국민체육진흥법 제2조 제10호에는 “‘도핑’이란 선수의 운동능력을 강화시키기 위하여 문화체육관광부장관이 고시하는 금지 목록에 포함된 약물 또는 방법을 복용하거나 사용하는 것을 말한다.”라고 규정되어 있으며, 동법 제15조에서 도핑방지 활동에 대한 명문의 규정을 두고 있다. 위 규정에 따라 한국도핑방지위원회가 설립 되어 도핑방지위원회는 도핑방지 및 도핑검사에 대한 연구부터 실행까지의 광범위한 권한을 부여 받고 있다. 도핑과 관련하여 민사적으로는 선수와 구단, 관중, 스폰서, 의사 사이에 여러 법적 문제가 발생할 수 있다. 주로 고의 및 과실의 정도에 따른 손해배상과 계약 해지 등이 문제될 것인데, 이에 대하여는 특별법이 없어 민법의 일반원리에 의하여 해결되는 실정이다. 한편 도핑과 관련하여 형사적으로는 살인죄, 과실치사죄, 상해죄, 과실치상죄, 사기죄 등이 문제되는데, 그 고의성과 위법성 인식, 인과관계 등에 대한 입증이 쉽지 않을 수 있다. 즉 도핑 관련 하여서는 형사적으로도 특별법이 없고 일반 형법에 의하여 해결되는 상황이다. 즉 우리나라도 도핑의 방지를 위하여 노력을 기울이고 있으나 도핑의 민⋅형사상 책임에 관하여는 도핑 관련한 명확하고 특정적인 조항이 존재하지 않고, 따라서 일반론적으로 해결되고 있는 것이 현실이다. 이에 도핑 관련한 국내외의 연구 등을 검토하여 도핑 관련 특정 조항 내지 특별법 신설 논의가 필요한 시점으로 보인다.

Cu2ZnSn(S,Se)4 (CZTSSe) films were prepared on Mo coated soda lime glass substrates by sulfo-selenization of sputtered stacked Zn-Sn-Cu(CZT) precursor films. The precursor was dried in a capped state with aqueous NaOH solution. The CZT precursor films were sulfo-selenized in the S + Se vapor atmosphere. Sodium was doped during the sulfo-selenization treatment. The effect of sodium doping on the structural and electrical properties of the CZTSSe thin films were studied using FE-SEM(field-emission scanning electron microscopy), XRD(X-ray diffraction), XRF(X-ray fluorescence spectroscopy), dark current, SIMS(secondary ion mass spectrometry), conversion efficiency. The XRD, XRF, FE-SEM, Dark current, SIMS and cell efficiency results indicated that the properties of sulfo-selenized CZTSSe thin films were strongly related to the sodium doping. Further detailed analysis and discussion for effect of sodium doping on the properties CZTSSe thin films will be discussed.

A simple, but effective means of tailoring the physical and chemical properties of carbon materials should be secured. In this sense, chemical doping by incorporating boron or nitrogen into carbon materials has been examined as a powerful tool which provides distinctive advantages over exohedral doping. In this paper, we review recent results pertaining methods by which to introduce boron atoms into the sp2 carbon lattice by means of high-temperature thermal diffusion, the properties induced by boron doping, and promising applications of this type of doping. We envisage that intrinsic boron doping will accelerate both scientific and industrial developments in the area of carbon science and technology in the future.

Lithium-ion batteries have been considered the most important devices to power mobile or small-sized devices due to their high energy density. LixCoO2 has been studied as a cathode material for the Li-ion battery. However, the limitation of its capacity impedes the development of high capacity cathode materials with Ni, Mn, etc. in them. The substitution of Mn and Ni for Co leads to the formation of solid solution phase LiNixMnyCo1-x-yO2 (NMC, both x and y < 1), which shows better battery performance than unsubstituted LiCoO2. However, despite a high discharge capacity in the Ni-rich compound (Ni > 0.8 in the metal site), poor cycle retention capability still remains to be overcome. In this study, aiming to improve the stability of the physical and chemical bonding, we investigate the stabilization effect of Ca in the Ni-rich layered compound Li(Ni0.83Co0.12Mn0.05)O2, and then Ca is added to the modified secondary particles to lower the degree of cationic mixing of the final particles. For the optimization of the final grains added with Ca, the Ca content (x = 0, 2.5, 5.0, 10.0 at.%) versus Li is analyzed.

ZnO with wurtzite structure has a wide band gap of 3.37 eV. Because ZnO has a direct band gap and a large exciton binding energy, it has higher optical efficiency and thermal stability than the GaN material of blue light emitting devices. To fabricate ZnO devices with optical and thermal advantages, n-type and p-type doping are needed. Many research groups have devoted themselves to fabricating stable p-type ZnO. In this study, As+ ion was implanted using an ion implanter to fabricate p-type ZnO. After the ion implant, rapid thermal annealing (RTA) was conducted to activate the arsenic dopants. First, the structural and optical properties of the ZnO thin films were investigated for as-grown, as-implanted, and annealed ZnO using FE-SEM, XRD, and PL, respectively. Then, the structural, optical, and electrical properties of the ZnO thin films, depending on the As ion dose variation and the RTA temperatures, were analyzed using the same methods. In our experiment, p-type ZnO thin films with a hole concentration of 1.263 × 1018 cm−3 were obtained when the dose of 5 × 1014 As ions/cm2 was implanted and the RTA was conducted at 850 oC for 1 min.

This paper addresses the effect of dopants on the electronic properties of zigzag (8, 0) semiconducting single walled carbon nanotubes (SWCNTs), using extended Hückel theory combined with nonequilibrium Green’s function formalism. Through appropriate dopant concentrations, the electronic properties of SWCNTs can be modified. Within this context, we present our ongoing investigation on (8, 0) SWCNTs doped with nitrogen. Quantum confinement effects on the electronic properties of the SWCNTs have also been investigated. The obtained results reveal that the electronic properties of SWCNTs are strongly dependent on the dopant concentration and modification of electronic structures by hydrogen confinement.

Bi2Te3 related compounds show the best thermoelectric properties at room temperature. However, n-type Bi2Te2.7Se0.3 showed no improvement on ZT values. To improve the thermolectric propterties of n-type Bi2Te2.7Se0.3, this research has Cu-doped n-type powder. This study focused on effects of Cu-doping method on the thermoelectric properties of n-type materials, and evaluated the comparison between the Cu chemical and mechanical doping. The synthesized powder was manufactured by the spark plasma sintering(SPS). The thermoelectric properties of the sintered body were evaluated by measuring their Seebeck coefficient, electrical resistivity, thermal conductivity, and hall coefficient. An introduction of a small amount of Cu reduced the thermal conductivity and improved the electrical properties with Seebeck coefficient. The authors provided the optimal concentration of Cu0.1Bi1.99Se0.3Te2.7. A figure of merit (ZT) value of 1.22 was obtained for Cu0.1Bi1.9Se0.3Te2.7 at 373K by Cu chemical doping, which was obviously higher than those of Cu0.1Bi1.9Se0.3Te2.7 at 373K by Cu mechanical doping (ZT=0.56) and Cu-free Bi2Se0.3Te2.7 (ZT=0.51).

본 연구에서는 발광층의 전자와 정공의 재결합 영역을 확인하고, 단계적 도핑구조를 이용하여 여기자들의 효율적인 분배를 통해 roll-off 효율을 감소시켜서 녹색 인광 유기발광다이오드의 수명 증가 를 나타냈다. 발광층 내 호스트는 양극성의 4,4,N,N'-dicarbazolebiphenyl (CBP)를 사용하여 전하의 이 동을 원활하게 하였다. 발광층을 네 구역으로 분할하여 각각 소자를 제작하였고, 네 구역의 도판트 농도 에 따라 발광효율과 수명 향상을 보였다. 이로써 발광층 내의 단계적 도핑구조를 이용하여 캐리어와 여 기자들이 원활하게 분배된 것을 확인하였다. 기준소자 대비 발광층의 도판트 농도를 5, 7, 11, 9% 순서 로 단계적 도핑구조를 적용한 device C의 수명이 약 73.70% 증가하였고, 휘도 효율은 51.10 cd/A와 외 부 양자 효율은 14.88%의 성능을 보였다.

유기태양전지의 투명전극으로서 기존의 값비싸고 깨지기 쉬운 Indium Tin Oxide (ITO) 전극을 대체하고자, 전도성 고분자인 poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)를 적용하였다. 솔벤트의 도핑 농도에 따른 PEDOT:PSS 박막의 전기 전도도와 표면 거칠기의 특성 변화를 관찰하고, 그 결과가 PEDOT:PSS를 투명전극으로 사용한 유기태양전지의 특성에 미치는 영향을 연구하였다. PEDOT:PSS의 솔벤트 농도가 증가함에 따라, 박막의 표면 거칠기가 증가하고, 이는 유기태양전지의 단락전류의 변화를 야기했다. 또한, 소자의 홀 이동층이 얇아짐에 따라 광활성층의 단파장영역의 광흡수가 증가하는 것을 관찰할 수 있었다.

The contact mechanism of devices is usually researched at electrode contacts. However, the contact between a dielectric and channel at the MOS structure is more important. The graphene was used as a channel material, and the thin film transistor with MOS structure was prepared to observe the contact mechanism. The graphene was obtained on Cu foil by the thermal decomposition method with H2 and CH4 mixed gases at an ambient annealing temperature of 1000˚C during the deposition for 30 min, and was then transferred onto a SiO2/Si substrate. The graphene was doped in a nitrogen acidic solution. The chemical properties of graphene were investigated to research the effect of nitric atoms doping. The sheet resistance of graphene decreased after nitrogen acidic doping, and the sheet resistance decreased with an increase in the doping times because of the increment of negative charge carriers. The nitric-atom-doped graphene showed the Ohmic contact at the curve of the drain current and drain voltage, in spite of the Schottky contact of grapnene without doping.

To compare the photocatalytic performances of titania for purification of waste water according to applied voltages and doping, TiO2 films were prepared in a 1.0 M H2SO4 solution containing NH4F at different anodic voltages. Chemical bonding states of F-N-codoped TiO2 were analyzed using surface X-ray photoelectron spectroscopy (XPS). The photocatalytic activity of the co-doped TiO2 films was analyzed by the degradation of aniline blue solution. Nanotubes were formed with thicknesses of 200-300 nm for the films anodized at 30 V, but porous morphology was generated with pores of 1-2 μm for the TiO2 anodized at 180 V. The phenomenon of spark discharge was initiated at about 98 V due to the breakdown of the oxide films in both solutions. XPS analysis revealed the spectra of F1s at 684.3 eV and N1s at 399.8 eV for the TiO2 anodized in the H2SO4-NH4F solution at 180 V, suggesting the incorporation of F and N species during anodization. Dye removal rates for the pure TiO2 anodized at 30 V and 180 V were found to be 14.0% and 38.9%, respectively, in the photocatalytic degradation test of the aniline blue solution for 200 min irradiation; the rates for the F-N-codoped TiO2 anodized at 30 V and 180 V were found to be 21.2% and 65.6%, respectively. From the results of diffuse reflectance absorption spectroscopy (DRS), it was found that the absorption edge of the F-N-codoped TiO2 films shifted toward the visible light region up to 412 nm, indicating that the photocatalytic activity of TiO2 is improved by appropriate doping of F and N by the addition of NH4F.

We report on the effects of TiO2 doping power on the characteristics of multicomponent TiO2-ITO (TITO) electrodes prepared by a multi-target sputtering system with tilted cathode guns. Both as-deposited and annealed TITO electrodes showed linearly increased sheet resistance and resistivity with increasing TiO2 doping power. However, the TITO electrodes exhibited a fairly high optical transmittance regardless of the TiO2 doping power due to the high transparency of the TiO2. Although the annealed TITO showed much lower sheet resistance and resistivity relative to the as-deposited samples, the electrical properties of the annealed samples exhibited similar dependence on the TiO2 power to the as-deposited samples. In addition, it was found that doping of an anatase TiO2 in the ITO electrode prevented the preferred (222) orientation of the TITO electrodes. Although the TITO electrode showed higher sheet resistance and resistivity than that of the pure ITO electrode, it offers a very smooth surface and usage of a low-cost Ti element. It is thus considered a promising multicomponent transparent conducting electrode for cost-efficient flat panel displays and photovoltatics.

Tantalum nitrides () have been developed to substitute the Cd based pigments for non-toxic red pigment. Various doping elements were doped to reduce the amount of high price Tantalum element used and preserve the red color tonality. Doping elements were added in the synthesizing process of precursor of amorphous tantalum oxides and then Tantalum nitrides doped with various elements were obtained by ammonolysis process. The average particle size of final nitrides with secondary phases was larger than the nitride without the secondary phases. Also secondary phases reduced the red color tonality of final products. On the other hand, final nitrides without secondary phase had orthorhombic crystal system and presented good red color. In other words, in the case of nitrides without secondary phases, doping elements made a solid solution of tantalum nitride. In this context, doping process controlled the ionic state of nitrides and the amount of oxygen/nitrogen in final nitrides affected the color tonality.

We investigated the effects of Co doping on the NO gas sensing characteristics of ZnO-carbon nanotube (ZnO-CNT) layered composites fabricated by coaxial coating of single-walled CNTs with ZnO using pulsed laser deposition. Structural examinations clearly confirmed a distinct nanostructure of the CNTs coated with ZnO nanoparticles of an average diameter as small as 10 nm and showed little influence of doping 1 at.% Co into ZnO on the morphology of the ZnO-CNT composites. It was found from the gas sensing measurements that 1 at.% Co doping into ZnO gave rise to a significant improvement in the response of the ZnO-CNT composite sensor to NO gas exposure. In particular, the Co-doped ZnO-CNT composite sensor shows a highly sensitive and fast response to NO gas at relatively low temperatures and even at low NO concentrations. The observed significant improvement of the NO gas sensing properties is attributed to an increase in the specific surface area and the role as a catalyst of the doped Co elements. These results suggest that Co-doped ZnOCNT composites are suitable for use as practical high-performance NO gas sensors.

In high-efficiency Cu(In,Ga)Se2 solar cells, Na is doped into a Cu(In,Ga)Se2 light-absorbing layer from sodalime-glass substrate through Mo back-contact layer, resulting in an increase of device performance. However, this supply of sodium is limited when the process temperature is too low or when a substrate does not supply Na. This limitation can be overcome by supplying Na through external doping. For Na doping, an NaF interlayer was deposited on Mo/glass substrate. A Cu(In,Ga)Se2 absorber layer was deposited on the NaF interlayer by a three-stage co-evaporation process As the thickness of NaF interlayer increased, smaller grain sizes were obtained. The resistivity of the NaF-doped CIGS film was of the order of 103Ω·cm indicating that doping was not very effective. However, highest conversion efficiency of 14.2% was obtained when the NaF thickness was 25 nm, suggesting that Na doping using an NaF interlayer is one of the possible methods for external doping.

Simple and high efficiency green phosphorescent devices using an intermixed double host of 4, 4', 4"-tris(N-carbazolyl) triphenylamine [TCTA], 1, 3, 5-tris (N-phenylbenzimiazole-2-yl) benzene [TPBI], phosphorescent dye of tris(2-phenylpyridine)iridium(III) [Ir(ppy)3], and selective doping in the TPBI region were fabricated, and their electro luminescent characteristics were evaluated. In the device fabrication, layers of 70Å-TCTA/90Å-TCTA[0.5TPBI0.5/90Å-TPBI doped with Ir(ppy)3 of 8% and an undoped layer of 50Å-TPBI were successively deposited to form an emission region, and SFC137 [proprietary electron transporting material] with three different thicknesses of 300Å, 500Å, and 700Å were used as an electron transport layer. The device with 500Å-SFC137 showed the luminance of 48,300 cd/m2 at an applied voltage of 10 V, and a maximum current efficiency of 57 cd/A under a luminance of 230 cd/m2. The peak wavelength in the electroluminescent spectral and color coordinates on the Commission Internationale de I'Eclairage [CIE] chart were 512 nm and (0.31, 0.62), respectively.