본 연구에서는 poly(acrylonitrile-butadiene-styrene) (ABS)에 carbon graphite와 zeolite 4A를 첨가하여 복합 필름을 제조하고 공기와 수증기 투과 특성을 살펴보았다. 복합 필름의 경우 모든 경우에서 순수한 ABS에 비해서 산소와 질소의 투과도가 감소하였으며, 산소의 투과도 감소가 질소의 투과도 감소보다 약간 큰 관계로 산소/질소 선택도도 조금 감소하였다. 또한, 수증기 투과도도 순수한 ABS에 비해서 약 1/2로 감소하였다. 이러한 투과도의 감소는 ABS에 filler를 첨가함으로 인하여 물질 확산 경로의 tortuosity가 증가했기 때문인 것으로 생각된다.

The effects of an addition of ZrO2 on the microstructure and electrical properties of MgO films as a protective layer for AC plasma display panels were investigated. MgO + a 200 ppm ZrO2 protective layer prepared by e-beam evaporation exhibited a secondary electron emission coefficient (γ) that was improved by 21% compared to that of a pure MgO protective layer. The relative density and Vickers hardness increased with a further addition of ZrO2. These results suggest that the discharge properties and optical properties of MgO protective layers are closely related to the relative density and Vickers hardness. The good optical and electrical properties of γ, at 0.080, a grain size of 19 μm and an optical transmittance of 91.93 % were obtained for the MgO + 200 ppm ZrO2 protective layer sintered at 1700˚C for 5 hrs.

Ba(Ti,Sn)O3 thin films, for use as dielectrics for MLCCs, were grown from Sn doped BaTiO3 sourcesby e-beam evaporation. The crystalline phase, microstructure, dielectric and electrical properties of films wereinvestigated as a function of the (Ti＋Sn)/Ba ratio. When BaTiO3 sources doped with 20~50mol% of Sn wereevaporated, BaSnO3films were grown due to the higher vapor pressure of Ba and Sn than of Ti. However, itwas possible to grow the Ba(Ti,Sn)O3 thin films with ≤15mol% of Sn by co-evaporation of BTS and Ti metalsources. The (Ti＋Sn)/Ba and Sn/Ti ratio affected the microstructure and surface roughness of films and thedielectric constant increased with increasing Sn content. The dielectric constant and dissipation factor ofBa(Ti,Sn)O3 thin films with ≤15mol% of Sn showed the range of 120 to 160 and 2.5~5.5% at 1KHz,respectively. The leakage current density of films was order of the 10−9~10−8A/cm2 at 300KV/cm. The researchresults showed that it was feasible to grow the Ba(Ti,Sn)O3 thin films as dielectrics for MLCCs by an e-beamevaporation technique.

지하수나 폐수 등에 포함된 독성을 가진 음이온류나 양이온류 등의 유독물질을 경제적으로 처리하는데 탁월한 분리기능을 가진 것으로 알려진 전기투석공정에 사용하기 위해 음이온 교환 복합막을 제조하여 그 전기화학적인 특성을 조사하였다. 다양한 조성의 vinylbenzylchloride (VBC)와 divinylbenzene (DVB) 그리고 α,α-azobis(isobutyronitrile) (AIBN)으로 이루어진 단량체 용액에 다공성 지지체인 poly(ethylene) (PE)을 함침한 후 열중합 가교시켜 poly(VBC-DVB)/PE 복합막을 생성한 다음 trimethylamine(TMA)과 acetone을 이용해 음이온 교환기(-N + (CH3)3)를 함유하는 복합막을 제조하였다. 음이온 교환막 제조시 VBC/DVB의 비율과 TMA/Acetone의 비율에 따른 막의 함수율, 이온교환용량(IEC) 및 전기저항을 조사하였다. 그 결과 제조된 막들은 사용된 PE지지체의 얇은 막두께에 기인하여 아스톰사의 상용화 음이온 교환막(AMX)보다 높은 IEC와 낮은 전기저항 및 낮은 함수율 등을 나타내는 것을 확인할 수 있었다. 본 실험에서 제조된 복합막은 저렴한 제조비용과 우수한 전기화학적 특성으로 정수 및 폐수처리를 위한 전기투석공정에 충분히 적용될 수 있음을 알 수 있었다.

A simple method to deposit carbon nanotube films uniformly on large area substrates using an arc discharge method is reported in this paper. The arc discharge method was modified to deposit carbon nanotube films in situ on the substrates. The substrates were scanned several times over the arcing point for a uniform film thickness. Deposition was carried out under variable dc bias conditions at 600 torr of H2 gas. The thickness uniformity of the single-wall carbon nanotube films as characterized by a four-point probe was within 30% deviation. The morphology and crystal quality of the single-wall carbon nanotube film were also characterized by field emission scanning electron microscopy and Raman spectroscopy.

In this study, BaTiO3 thin films were grown by RF-magnetron sputtering, and the effects of a post-annealing process on the structural characteristics of the BaTiO3 thin films were investigated. For the crystallization of the grown thin films, post-annealing was carried out in air at an annealing temperature that varied from 500-1000˚C. XRD results showed that the highest crystal quality was obtained from the samples annealed at 600-700˚C. From the SEM analysis, no crystal grains were observed after annealing at temperatures ranging from 500 to 600˚C; and 80 nm grains were obtained at 700˚C. The surface roughness of the BaTiO3 thin films from AFM measurements and the crystal quality from Raman analysis also showed that the optimum annealing temperature was 700˚C. XPS results demonstrated that the binding energy of each element of the thin-film-type BaTiO3 in this study shifted with the annealing temperature. Additionally, a Ti-rich phenomenon was observed for samples annealed at 1000˚C. Depth-profiling analysis through a GDS (glow discharge spectrometer) showed that a stoichiometric composition could be obtained when the annealing temperature was in the range of 500 to 700˚C. All of the results obtained in this study clearly demonstrate that an annealing temperature of 700˚C results in optimal structural properties of BaTiO3 thin films in terms of their crystal quality, surface roughness, and composition.

WO3-doped SnO2 thin films were prepared in a solution-deposition method and their gas-sensing characteristics were investigated. The doping of WO3 to SnO2 increased the response (Ra/Rg, Ra: resistance in air, Rg: resistance in gas) to H2 substantially. Moreover, the Ra/Rg value of 10 ppm CO increased to 5.65, whereas that of NO2 did not change by a significant amount. The enhanced response to H2 and the selective detection of CO in the presence of NO2 were explained in relation to the change in the surface reaction by the addition of WO3. The WO3-doped SnO2 sensor can be used with the application of a H2 sensor for vehicles that utilize fuel cells and as an air quality sensor to detect CO-containing exhaust gases emitted from gasoline engines.

The structural and electrical properties of amorphous BaSm2Ti4O12 (BSmT) films on a TiN/SiO2/Si substrate deposited using a RF magnetron sputtering method were investigated. The deposition of BSmT films was carried out at 300˚C in a mixed oxygen and argon (O2 : Ar = 1 : 4) atmosphere with a total pressure of 8.0 mTorr. In particular, a 45 nm-thick amorphous BSmT film exhibited a high capacitance density and low dissipation factor of 7.60 fF/μm2 and 1.3%, respectively, with a dielectric constant of 38 at 100 kHz. Its capacitance showed very little change, even in GHz ranges from 1.0 GHz to 6.0 GHz. The quality factor of the BSmT film was as high as 67 at 6 GHz. The leakage current density of the BSmT film was also very low, at approximately 5.11 nA/cm2 at 2 V; its conduction mechanism was explained by the the Poole-Frenkel emission. The quadratic voltage coefficient of capacitance of the BSmT film was approximately 698 ppm/V2, which is higher than the required value (<100 ppm/V2) for RF application. This could be reduced by improving the process condition. The temperature coefficient of capacitance of the film was low at nearly 296 ppm/˚C at 100 kHz. Therefore, amorphous BSmT grown on a TiN substrate is a viable candidate material for a metal-insulator-metal capacitor.

A 532 nm Nd-YAG laser was applied to crystallize amorphous Si thin films in order to evaluate the applicability of a Nd-YAG laser to low-temperature polycrystalline Si technology. The irradiation of a green laser was controlled during the crystallization of amorphous Si thin films deposited onto glass substrates in a sophisticated process. Raman spectroscopy and UV-Visible spectrophotometry were employed to quantify the degree of crystallization in the Si thin films in terms of its optical transmission and vibrational characteristics. The effectiveness of the Nd-YAG laser is suggested as a feasible alternative that is capable of crystallizing the amorphous Si thin films.

A new cost-effective atomic layer deposition (ALD) technique, known as Proximity-Scan ALD (PS-ALD) was developed and its benefits were demonstrated by depositing Al2O3 and HfO2 thin films using TMA and TEMAHf, respectively, as precursors. The system is consisted of two separate injectors for precursors and reactants that are placed near a heated substrate at a proximity of less than 1 cm. The bell-shaped injector chamber separated but close to the substrate forms a local chamber, maintaining higher pressure compared to the rest of chamber. Therefore, a system configuration with a rotating substrate gives the typical sequential deposition process of ALD under a continuous source flow without the need for gas switching. As the pressure required for the deposition is achieved in a small local volume, the need for an expensive metal organic (MO) source is reduced by a factor of approximately 100 concerning the volume ratio of local to total chambers. Under an optimized deposition condition, the deposition rates of Al2O3 and HfO2 were 1.3 Å/cycle and 0.75 Å/cycle, respectively, with dielectric constants of 9.4 and 23. A relatively short cycle time (5~10 sec) due to the lack of the time-consuming "purging and pumping" process and the capability of multi-wafer processing of the proposed technology offer a very high through-put in addition to a lower cost.

참외 재배시설에서 시설 내부 필름 표면에 결로현상으로 부착된 수적량과 시설 외부 필름 표면에 부착된 분진 부착량이 적었던 PO-2에서 투광률이 71.2%로 가장 높았다. 겨울철 시설 터널에서 온도가 가장 낮은 새벽 시간의 기온은 노지보다 11.8~14.5℃ 정도 높게 나타났으며, 피복자재에 따라서는 최고 2.7℃차이가 났는데 PO-2에서 가장 높았다. 지온은 터널이 노지보다 13.0~15.3℃ 정도 높았으며, PO-2에서 가장 높아 PE보다 2.3℃ 높았다. 참외 과실 전체에서 엽산을 분석한 결과 엽산함량은 품종에 따라 68.9~113.4μg/100g 정도로 나타났다. 저온기에 참외 과육에서 45~53μg/100g 정도로 나타났으며, 보온성과 광환경이 우수한 PO-2에서 PE보다 17% 정도 높은 수준을 보였다. 그러나 외기 온도가 15℃ 이상 확보된 시기에는 55.2~75.2μg/100g 정도로 나타났으며, PO-2에서 PE보다 과육에서 36% 높은 수준을 보였다.

The effects of the deposition and annealing temperature on the structural, electrical and opticalproperties of Ag doped ZnO (ZnO:Ag) thin films were investigated. All of the films were deposited with a 2wt%Ag2O-doped ZnO target using an e-beam evaporator. The substrate temperature varied from room temperature(RT) to 250oC. An undoped ZnO thin film was also fabricated at 150oC as a reference. The as-grown films wereannealed in temperatures ranging from 350 to 650oC for 5h in air. The Ag content in the film decreased asthe deposition and the post-annealing temperature increased due to the evaporation of the Ag in the film.During the annealing process, grain growth occurred, as confirmed from XRD and SEM results. The as-grownfilm deposited at RT showed n-type conduction; however, the films deposited at higher temperatures showedp-type conduction. The films fabricated at 150oC revealed the highest hole concentration of 3.98×1019cm-3 anda resistivity of 0.347Ω·cm. The RT PL spectra of the as-grown ZnO:Ag films exhibited very weak emissionintensity compared to undoped ZnO; moreover, the emission intensities became stronger as the annealingtemperature increased with two main emission bands of near band-edge UV and defect-related greenluminescence exhibited. The film deposited at 150oC and annealed at 350oC exhibited the lowest value of Ivis/Iuv of 0.05.

This study examined the effect of growth temperature on the electrical and optical properties ofhydrogenated Al-doped zinc oxide (AZO:H) thin films deposited by rf magnetron sputtering using a ceramictarget (98wt.% ZnO, 2wt.% Al2O3). Various AZO films on glass were prepared by changing the substratetemperature from room temperature to 200oC. It was shown that intentionally incorporated hydrogen plays animportant role on the electrical properties of AZO:H films by increasing free carrier concentration. As a result,in the 2% H2 addition at the growth temperature of 150oC, resistivity of 3.21×10-4Ω·cm, mobility of 21.9cm2/V−s, electric charge carrier concentration of 9.35×1020cm-3 was obtained. The AZO:H films show a hexagonalwurtzite structure preferentially oriented in the (002) crystallographic direction.

Chromium nitride (CrN) films were deposited on silicon substrate by RF magnetron sputtering assisted by inductive coupled nitrogen plasma without intentional substrate heating. Films were deposited with different levels of bombarding energy by nitrogen ions (N+) to investigate the influence of substrate bias voltage (Vb) on the growth of CrN thin films. XRD spectra showed that the crystallographic structure of CrN films was strongly affected by substrate bias voltage. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) results showed that surface roughness and grain size of the CrN films varied significantly with bias voltage. For - 80 Vb depositions, the CrN films showed bigger grain sizes than those of other bias voltage conditions. The lowest surface roughness of 0.15 nm was obtained from the CrN films deposited at .130 Vb.

Amorphous BaTi4O9 (BT4) film was deposited on Pt/Si substrate by RF magnetron sputter and their dielectric properties and electrical properties are investigated. A cross sectional SEM image and AFM image of the surface of the amorphous BT4 film deposited at room temperature showed the film was grown well on the substrate. The amorphous BT4 film had a large dielectric constant of 32, which is similar to that of the crystalline BT4 film. The leakage current density of the BT4 film was low and a Poole-Frenkel emission was suggested as the leakage current mechanism. A positive quadratic voltage coefficient of capacitance (VCC) was obtained for the BT4 film with a thickness of<70 nm and it could be due to the free carrier relaxation. However, a negative quadratic VCC was obtained for the films with a thickness ≥96nm, possibly due to the dipolar relaxation. The 55 nm-thick BT4 film had a high capacitance density of 5.1fF/μm2 with a low leakage current density of 11.6nA/cm2 at 2 V. Its quadratic and linear VCCs were 244ppm/V2 and -52 ppm/V, respectively, with a low temperature coefficient of capacitance of 961ppm/˚C at 100 kHz. These results confirmed the potential suitability of the amorphous BT4 film for use as a high performance metal-insulator-metal (MIM) capacitor.