A new cost-effective atomic layer deposition (ALD) technique, known as Proximity-Scan ALD (PS-ALD) was developed and its benefits were demonstrated by depositing Al2O3 and HfO2 thin films using TMA and TEMAHf, respectively, as precursors. The system is consisted of two separate injectors for precursors and reactants that are placed near a heated substrate at a proximity of less than 1 cm. The bell-shaped injector chamber separated but close to the substrate forms a local chamber, maintaining higher pressure compared to the rest of chamber. Therefore, a system configuration with a rotating substrate gives the typical sequential deposition process of ALD under a continuous source flow without the need for gas switching. As the pressure required for the deposition is achieved in a small local volume, the need for an expensive metal organic (MO) source is reduced by a factor of approximately 100 concerning the volume ratio of local to total chambers. Under an optimized deposition condition, the deposition rates of Al2O3 and HfO2 were 1.3 Å/cycle and 0.75 Å/cycle, respectively, with dielectric constants of 9.4 and 23. A relatively short cycle time (5~10 sec) due to the lack of the time-consuming "purging and pumping" process and the capability of multi-wafer processing of the proposed technology offer a very high through-put in addition to a lower cost.

참외 재배시설에서 시설 내부 필름 표면에 결로현상으로 부착된 수적량과 시설 외부 필름 표면에 부착된 분진 부착량이 적었던 PO-2에서 투광률이 71.2%로 가장 높았다. 겨울철 시설 터널에서 온도가 가장 낮은 새벽 시간의 기온은 노지보다 11.8~14.5℃ 정도 높게 나타났으며, 피복자재에 따라서는 최고 2.7℃차이가 났는데 PO-2에서 가장 높았다. 지온은 터널이 노지보다 13.0~15.3℃ 정도 높았으며, PO-2에서 가장 높아 PE보다 2.3℃ 높았다. 참외 과실 전체에서 엽산을 분석한 결과 엽산함량은 품종에 따라 68.9~113.4μg/100g 정도로 나타났다. 저온기에 참외 과육에서 45~53μg/100g 정도로 나타났으며, 보온성과 광환경이 우수한 PO-2에서 PE보다 17% 정도 높은 수준을 보였다. 그러나 외기 온도가 15℃ 이상 확보된 시기에는 55.2~75.2μg/100g 정도로 나타났으며, PO-2에서 PE보다 과육에서 36% 높은 수준을 보였다.

The effects of the deposition and annealing temperature on the structural, electrical and opticalproperties of Ag doped ZnO (ZnO:Ag) thin films were investigated. All of the films were deposited with a 2wt%Ag2O-doped ZnO target using an e-beam evaporator. The substrate temperature varied from room temperature(RT) to 250oC. An undoped ZnO thin film was also fabricated at 150oC as a reference. The as-grown films wereannealed in temperatures ranging from 350 to 650oC for 5h in air. The Ag content in the film decreased asthe deposition and the post-annealing temperature increased due to the evaporation of the Ag in the film.During the annealing process, grain growth occurred, as confirmed from XRD and SEM results. The as-grownfilm deposited at RT showed n-type conduction; however, the films deposited at higher temperatures showedp-type conduction. The films fabricated at 150oC revealed the highest hole concentration of 3.98×1019cm-3 anda resistivity of 0.347Ω·cm. The RT PL spectra of the as-grown ZnO:Ag films exhibited very weak emissionintensity compared to undoped ZnO; moreover, the emission intensities became stronger as the annealingtemperature increased with two main emission bands of near band-edge UV and defect-related greenluminescence exhibited. The film deposited at 150oC and annealed at 350oC exhibited the lowest value of Ivis/Iuv of 0.05.

This study examined the effect of growth temperature on the electrical and optical properties ofhydrogenated Al-doped zinc oxide (AZO:H) thin films deposited by rf magnetron sputtering using a ceramictarget (98wt.% ZnO, 2wt.% Al2O3). Various AZO films on glass were prepared by changing the substratetemperature from room temperature to 200oC. It was shown that intentionally incorporated hydrogen plays animportant role on the electrical properties of AZO:H films by increasing free carrier concentration. As a result,in the 2% H2 addition at the growth temperature of 150oC, resistivity of 3.21×10-4Ω·cm, mobility of 21.9cm2/V−s, electric charge carrier concentration of 9.35×1020cm-3 was obtained. The AZO:H films show a hexagonalwurtzite structure preferentially oriented in the (002) crystallographic direction.

Chromium nitride (CrN) films were deposited on silicon substrate by RF magnetron sputtering assisted by inductive coupled nitrogen plasma without intentional substrate heating. Films were deposited with different levels of bombarding energy by nitrogen ions (N+) to investigate the influence of substrate bias voltage (Vb) on the growth of CrN thin films. XRD spectra showed that the crystallographic structure of CrN films was strongly affected by substrate bias voltage. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) results showed that surface roughness and grain size of the CrN films varied significantly with bias voltage. For - 80 Vb depositions, the CrN films showed bigger grain sizes than those of other bias voltage conditions. The lowest surface roughness of 0.15 nm was obtained from the CrN films deposited at .130 Vb.

Amorphous BaTi4O9 (BT4) film was deposited on Pt/Si substrate by RF magnetron sputter and their dielectric properties and electrical properties are investigated. A cross sectional SEM image and AFM image of the surface of the amorphous BT4 film deposited at room temperature showed the film was grown well on the substrate. The amorphous BT4 film had a large dielectric constant of 32, which is similar to that of the crystalline BT4 film. The leakage current density of the BT4 film was low and a Poole-Frenkel emission was suggested as the leakage current mechanism. A positive quadratic voltage coefficient of capacitance (VCC) was obtained for the BT4 film with a thickness of<70 nm and it could be due to the free carrier relaxation. However, a negative quadratic VCC was obtained for the films with a thickness ≥96nm, possibly due to the dipolar relaxation. The 55 nm-thick BT4 film had a high capacitance density of 5.1fF/μm2 with a low leakage current density of 11.6nA/cm2 at 2 V. Its quadratic and linear VCCs were 244ppm/V2 and -52 ppm/V, respectively, with a low temperature coefficient of capacitance of 961ppm/˚C at 100 kHz. These results confirmed the potential suitability of the amorphous BT4 film for use as a high performance metal-insulator-metal (MIM) capacitor.

본 연구에서는 졸-겔 공법을 이용하여 가스 차단 특성을 갖는 SiO2/EVOH(에틸렌 비닐알콜 공중합체) 하이브리드 물질을 제조하였다. 제조된 여러 조성의 하이브리드 졸을 표면 처리한 biaxially oriented polypropylene (BOPP) 기지재에 스핀 코팅 방식을 이용하여 코팅하였다. X선 회절 및 DSC 분석에 의해 하이브리드 내의 EVOH 상과 실리카 상 사이의 결합에 따른 결정화 거동의 변화를 조사하였다. 또한 SiO2/EVOH 하이브리드 겔의 모폴로지 관찰을 통하여, 100nm 이하의 실리카 입자들이 균열하게 분산된 매우 치밀한 상 미세구조를 갖는 하이브리드 물질을 제조하기 위해 필요한 Tetraethylorthosilicate (TEOS) 무기전구체의 최적 함량이 존재함을 알 수 있었다. 첨가된 TEOS 함량이 최적 함량보다 낮거나 높은 경우에는 큰 도메인의 입자 클러스터들이 형성되어 매우 불안정한 모폴로지를 나타내는 상분리 현상이 관찰되었다. 이러한 모폴로지 결과는 하이브리드 코팅 필름의 산소 투과도의 변화 결과와 일치하였는데, TEOS 함량이 0.01 - 0.02mol로 첨가되어 제조된 하이브리드로 코팅된 필름의 경우 매우 우수한 산소 차단 특성을 나타냈으며, 0.04mol 이상으로 첨가되었을 때는 상 분리 및 미세 균열 발생으로 인하여 그 차단 특성이 급격하게 감소하는 것으로 나타났다.

참외의 저온기 무가온 시설재배에서 원적외선 흡수율이나 무적성 등의 물리적 특성을 향상시킨 필름 피복이 참외 과실품질에 미치는 영향을 조사하기 위하여 과실 성분을 조사하였다. 일반 PE필름과 기능성이 추가된 5가지의 필름을 5동의 하우스에 피복하여 성주지역 2곳에 각각 설치한 후 재배하였다. 하우스 내부 온도는 높은 적외선 흡수를 보였던 필름인 J-1과 J-2에서 K-3에 비해 약 2~5℃정도 높았다. 과실의 β-carotene 함량과 당함량은 기능성 필름과 일반필름에서 유의성 있는 차이를 보여 J-1, J-2, J-3 및 K-1에서 높게 나타났는데 이것은 필름의 특성에 따른 보온효과 때문인 것으로 생각된다. 성숙 후 단맛을 좌우하는 sucrose 함량도 기능성 필름에서 높았는데 이로 인해 당도도 향상되는 결과를 보였다. Ascorbic acid 함량은 투광량과 보온성이 낮은 K-2에서 더 높은 경향을 보였고 무기원소 함량은 처리간에 차이가 없었다. 이상의 결과는 참외의 저온기 단동 하우스재배에서 보온성과 투광성을 향상시킨 필름을 피복함으로써 참외 과실의 품질을 일부 개선할 수 있음을 시사하였다.