This study was performed to analyze the causative agents of disease occurred in Korean black goat. Bovine viral diarrhea (BVD) and infectious bovine rhinotracheitis (IBR) known as main causative agents of diarrhea and abortion in cattle were founded in Korean black goats. Escherichia coli and Clostridium perfringens are the main causes underlying diarrhea in Korean black goats as well as other animals. In addition, the orf virus was found as a causative agent of contagious ecthyma that shows frequent occurrence in Korean black goats. Leptospirosis was found in Korean black goats with low occurrence rate. However, unlike the reports from many other countries, we could not detect the antibodies for Johne’s disease and Neospora caninum in Korean black goats. These results are likely to contribute to improving the productivity of raising black goats as a field of livestock farming.

The CdS thin film used as a window layer in the CdTe thin film solar cell transports photo-generated electrons to the front contact and forms a p-n junction with the CdTe layer. This is why the electrical, optical, and surface properties of the CdS thin film influence the efficiency of the CdTe thin film solar cell. When CdTe thin film solar cells are fabricated, a heat treatment is done to improve the qualities of the CdS thin films. Of the many types of heat treatments, the CdCl2 heat treatment is most widely used because the grain size in CdS thin films increases and interdiffusion between the CdS and the CdTe layer is prevented by the heat treatment. To investigate the changes in the electrical, optical, and surface properties and the crystallinity of the CdS thin films due to heat treatment, CdS thin films were deposited on FTO/glass substrates by the rf magnetron sputtering technique, and then a CdCl2 heat treatment was carried out. After the CdCl2 heat treatment, the clustershaped grains in the CdS thin film increased in size and their boundaries became faint. XRD results show that the crystallinity improved and the crystalline size increased from 15 to 42 nm. The resistivity of the CdS single layer decreased from 3.87 to 0.26 Ωcm, and the transmittance in the visible region increased from 64% to 74%.

The microstructure and positive temperature coefficient of resistivity (PTCR) characteristics of 0.1mol%Na2Ti6O13doped 0.94BaTiO3-0.06(Bi0.5Na0.5)TiO3 (BBNT-NT001) ceramics sintered at various temperatures from 1200oC to 1350oC wereinvestigated in order to develop eco-friendly PTCR thermistors with a high Curie temperature (TC). Resulting thermistors showeda perovskite structure with a tetragonal symmetry. When sintered at 1200oC, the specimen had a uniform microstructure withsmall grains. However, abnormally grown grains started to appear at 1250oC and a homogeneous microstructure with large grainswas exhibited when the sintering temperature reached 1325oC. When the temperature exceeded 1325oC, the grain growth wasinhibited due to the numerous nucleation sites generated at the extremely high temperature. It is considered that Na2Ti6O13 isresponsible for the grain growth of the 0.94BaTiO3-0.06(Bi0.5Na0.5)TiO3 ceramics by forming a liquid phase during the sinteringat around 1300oC. The grain growth of the BBNT-NT001 ceramics was significantly correlated with a decrease of resistivity.All the specimens were observed to have PTCR characteristics except for the sample sintered at 1200oC. The BBNT-NT001ceramics had significantly decreased ñrt and increased resistivity jump with increasing sintering temperature at from 1200oC to1325oC. Especially, the BBNT-NT001 ceramics sintered at 1325oC exhibited superior PTCR characteristics of low resistivityat room temperature (122Ω·cm), high resistivity jump (1.28×104), high resistivity temperature factor (20.4%/oC), and a highTc of 157.9oC.

For use in ultrasonic actuators, we investigated the structural and piezoelectric properties of (1 - x)Pb(Zr0.515Ti0.485)O3 - xPb(Sb1/2Nb1/2)O3 + 0.5 wt% MnO2 [(1 - x)PZT - xPSN + MnO2] ceramics with a variation of x (x = 0.02, 0.04, 0.06, 0.08). All the ceramics, which were sintered at 1250˚C for 2 h, showed a typical perovskite structure, implying that they were well synthesized. A homogeneous micro structure was also developed for the specimens, and their average grain size was slightly decreased to 1.3μm by increasing x to 0.8. Moreover, a second phase with a pyrochlore structure appeared when x was above 0.06, which resulted in the deterioration of their piezoelectric properties. However, the 0.96PZT-0.04PSN+MnO2 ceramics, which corresponds with a morphotropic phase boundary (MPB) composition in the (1 - x)PZT - xPSN + MnO2 system, exhibited good piezoelectric properties: a piezoelectric constant (d33) of 325 pC/N, an electromechanical coupling factor (kp) of 70.8%, and a mechanical quality factor (Qm) of 1779. The specimens with a relatively high curie temperature (Tc) of 305˚C also showed a significantly high dielectric constant (εr) value of 1109. Therefore, the 0.96PZT - 0.04PSN + MnO2 ceramics are suitable for use in ultrasonic vibrators.

Positive temperature coefficient of resistivity (PTCR) characteristics of (1-x)BaTiO3-x(Bi0.5K0.5)TiO3ceramics doped with Nb2O5 were investigated in order to develop the Pb-free PTC thermistor available at hightemperatures of >120oC. The PTCR characteristics appearing in the (Bi0.5Ki0.5)TiO3 (<5mol%) incorporatedBaTiO3 ceramics, which might be mainly due to Bi+3 ions substituting for Ba+2 sites. The 0.99BaTiO3-0.01(Bi0.5K0.5)TiO3 ceramics showed good PTCR characteristics of a low resistivity at room temperature (ρr) of31 Ω·cm, a high ρmax/ρmin ratio of 5.38×103, and a high resistivity temperature factor (α) of 17.8%/oC. Theaddition of Nb2O5 to 0.99BaTiO3-0.01(Bi0.5K0.5)TiO3 ceramics further improved the PTCR characteristics.Especially, 0.025mol% Nb2O5 doped 0.99BaTiO3-0.01(Bi0.5K0.5)TiO3 ceramics exhibited a significantly increasedρmax/ρmin ratio of 8.7×103 and a high α of 18.6%/oC, along with a high Tc of 148oC despite a slightly increasedρr of 39 Ω·cm.

The effects of an addition of ZrO2 on the microstructure and electrical properties of MgO films as a protective layer for AC plasma display panels were investigated. MgO + a 200 ppm ZrO2 protective layer prepared by e-beam evaporation exhibited a secondary electron emission coefficient (γ) that was improved by 21% compared to that of a pure MgO protective layer. The relative density and Vickers hardness increased with a further addition of ZrO2. These results suggest that the discharge properties and optical properties of MgO protective layers are closely related to the relative density and Vickers hardness. The good optical and electrical properties of γ, at 0.080, a grain size of 19 μm and an optical transmittance of 91.93 % were obtained for the MgO + 200 ppm ZrO2 protective layer sintered at 1700˚C for 5 hrs.

The structural and electrical properties of amorphous BaSm2Ti4O12 (BSmT) films on a TiN/SiO2/Si substrate deposited using a RF magnetron sputtering method were investigated. The deposition of BSmT films was carried out at 300˚C in a mixed oxygen and argon (O2 : Ar = 1 : 4) atmosphere with a total pressure of 8.0 mTorr. In particular, a 45 nm-thick amorphous BSmT film exhibited a high capacitance density and low dissipation factor of 7.60 fF/μm2 and 1.3%, respectively, with a dielectric constant of 38 at 100 kHz. Its capacitance showed very little change, even in GHz ranges from 1.0 GHz to 6.0 GHz. The quality factor of the BSmT film was as high as 67 at 6 GHz. The leakage current density of the BSmT film was also very low, at approximately 5.11 nA/cm2 at 2 V; its conduction mechanism was explained by the the Poole-Frenkel emission. The quadratic voltage coefficient of capacitance of the BSmT film was approximately 698 ppm/V2, which is higher than the required value (<100 ppm/V2) for RF application. This could be reduced by improving the process condition. The temperature coefficient of capacitance of the film was low at nearly 296 ppm/˚C at 100 kHz. Therefore, amorphous BSmT grown on a TiN substrate is a viable candidate material for a metal-insulator-metal capacitor.

Amorphous BaTi4O9 (BT4) film was deposited on Pt/Si substrate by RF magnetron sputter and their dielectric properties and electrical properties are investigated. A cross sectional SEM image and AFM image of the surface of the amorphous BT4 film deposited at room temperature showed the film was grown well on the substrate. The amorphous BT4 film had a large dielectric constant of 32, which is similar to that of the crystalline BT4 film. The leakage current density of the BT4 film was low and a Poole-Frenkel emission was suggested as the leakage current mechanism. A positive quadratic voltage coefficient of capacitance (VCC) was obtained for the BT4 film with a thickness of<70 nm and it could be due to the free carrier relaxation. However, a negative quadratic VCC was obtained for the films with a thickness ≥96nm, possibly due to the dipolar relaxation. The 55 nm-thick BT4 film had a high capacitance density of 5.1fF/μm2 with a low leakage current density of 11.6nA/cm2 at 2 V. Its quadratic and linear VCCs were 244ppm/V2 and -52 ppm/V, respectively, with a low temperature coefficient of capacitance of 961ppm/˚C at 100 kHz. These results confirmed the potential suitability of the amorphous BT4 film for use as a high performance metal-insulator-metal (MIM) capacitor.

본 연구는 투여에 의한 발정 동기화 방법이 한우의 혈청 수준, 발정 발현율과 수태율에 미치는 영향을 규명하고자 수행하였다. 첫째로, 한우 미경산우에서 투여가 혈청 수준에 미치는 영향을 조사하기 위하여 한우 미경산우 10두 및 프리마틴 1두에 대하여 MGA를 1일 0.5 mg을 14일간 오전 배합 사료에 섞어 급여하였으며, 19일이 경과한 후에 25 mg을 투여하였다. MGA feeding 후 혈청 농도 수준을 분석하기 위하여 MGA 급여 기간과 급여 종

다양한 발정유기 방법의 반복처리에 따른 분만율은 평균 로 나타났고 생시체중에 있어서 자연 발정구와 발정 유기구에서 차이를 거의 보이지 않았으며 송아지 육성율은 농가의 사육경험이 많을수록 우수한 경향이었고 발정 동기화의 반복처리가 차기번식에 미치는 영향은 확인할 수 없었다. 1. 발정 유기구와 자연 발정구에서 출생한 송아지의 생시체중은 암송아지에서 각각 23.9kg, 24.0kg이었고, 수송아지에서 26.2kg, 24.9kg로써 처리간 차이가 없었다. 2