The effects of different plasma agent species ( CF4, N2) over the conductivity of CFX cathode material were identified. Both plasma treatments have surface etching effect, while the CF4 plasma treatment has C–F bond modification effect and the N2 plasma treatment has defluorination effect. The changes of surface chemical species and porosity along the plasma agent were elucidated. Moreover, the electrochemical properties of plasma-treated CFX confirmed the effects of plasma treatments. The charge-transfer resistance of plasma-treated CFX was maximum 60.3% reduced than the pristine CFX. The effects of surface chemical modification coupled with etching along the plasma gas agents were compared and identified with their reaction mechanisms.

Removing CO2 gas to address the global climate crisis is one of the most urgent agendas. To improve the CO2 adsorption ability of activated carbon, nitrogen plasma surface treatment was conducted. The effect of nitrogen plasma treatment on the surface chemistry and pore geometry of activated carbon was extensively analyzed. The porosity and surface groups of the activated carbon varied with the plasma treatment time. By plasma treatment for a few minutes, the microporosity and surface functionality could be simultaneously controlled. The changed microporosity and nitrogen groups affected the CO2 adsorption capacity and CO2 adsorption selectivity over N2. This simultaneous surface etching and functionalization effect could be achieved with a short operating time and low energy consumption.

Atomic layer etching (ALE) is a promising technique with atomic-level thickness controllability and high selectivity based on self-limiting surface reactions. ALE is performed by sequential exposure of the film surface to reactants, which results in surface modification and release of volatile species. Among the various ALE methods, thermal ALE involves a thermally activated reaction by employing gas species to release the modified surface without using energetic species, such as accelerated ions and neutral beams. In this study, the basic principle and surface reaction mechanisms of thermal ALE?processes, including “fluorination-ligand exchange reaction”, “conversion-etch reaction”, “conversion-fluorination reaction”, “oxidation-fluorination reaction”, “oxidation-ligand exchange reaction”, and “oxidation-conversion-fluorination reaction” are described. In addition, the reported thermal ALE processes for the removal of various oxides, metals, and nitrides are presented.

The reactivity evaluation of copper is performed using ethylenediamine, aminoethanol, and piperidine to apply organic chelators to copper etching. It is revealed that piperidine, which is a ring-type chelator, has the lowest reactivity on copper and copper oxide and ethylenediamine, which is a chain-type chelator, has the highest reactivity via inductively coupled plasma-mass spectroscopy (ICP-MS). Furthermore, it is confirmed that the stable complex of copper-ethylenediamine can be formed during the reaction between copper and ethylenediamine using nuclear magnetic resonance (NMR) and radio-thin layer chromatography. As a final evaluation, the copper reactivity is evaluated by wet etching using each solution. Scanning electron micrographs reveal that the degree of copper reaction in ethylenediamine is stronger than that in any other chelator. This result is in good agreement with the evaluation results obtained by ICP-MS and NMR. It is concluded that ethylenediamine is a prospective etch gas for the dry etching of the copper.

The purpose of this study is to present a novel indicator for analyzing machine failure based on its idle time and productivity. Existing machine repair plan was limited to machine experts from its manufacturing industries. This study evaluates the repair status of machines and extracts machines that need improvement. In this study, F-RPN was calculated using the etching process data provided by the 2018 PHM Data Challenge. Each S(S: Severity), O(O: Occurence), D(D: Detection) is divided into the idle time of the machine, the number of fault data, and the failure rate, respectively. The repair status of machine is quantified through the F-RPN calculated by multiplying S, O, and D. This study conducts a case study of machine in a semiconductor etching process. The process capability index has the disadvantage of not being able to divide the values outside the range. The performance of this index declines when the manufacturing process is under control, hereby introducing F-RPN to evaluate machine status that are difficult to distinguish by process capability index.

Dry etching of copper thin films is performed using high density plasma of ethylenediamine (EDA)/ hexafluoroisopropanol (HFIP)/Ar gas mixture. The etch rates, etch selectivities and etch profiles of the copper thin films are improved by adding HFIP to EDA/Ar gas. As the EDA/HFIP concentration in EDA/HFIP/Ar increases, the etch rate of copper thin films decreases, whereas the etch profile is improved. In the EDA/HFIP/Ar gas mixture, the optimal ratio of EDA to HFIP is investigated. In addition, the etch parameters including ICP source power, dc-bias voltage, process pressure are varied to examine the etch characteristics. Optical emission spectroscopy results show that among all species, [CH], [CN] and [H] are the main species in the EDA/HFIP/Ar plasma. The X-ray photoelectron spectroscopy results indicate the formation of CuCN compound and C-N-H-containing polymers during the etching process, leading to a good etch profile. Finally, anisotropic etch profiles of the copper thin films patterned with 150 nm scale are obtained in EDA/HFIP/Ar gas mixture.

W2C is synthesized through a reaction-sintering process from an ultrafine-W and WC powder mixture using spark plasma sintering (SPS). The effect of various parameters, such as W:WC molar ratio, sintering temperature, and sintering time, on the synthesis behavior of W2C is investigated through X-ray diffraction (XRD) analysis, scanning electron microscopy (SEM) analysis of the microstructure, and final sintered density. Further, the etching properties of a W2C specimen are analyzed. A W2C sintered specimen with a particle size of 2.0 μm and a relative density over 98% could be obtained from a W-WC powder mixture with 55 mol%, after SPS at 1700℃ for 20 min under a pressure of 50 MPa. The sample etching rate is similar to that of SiC. Based on X-ray photoelectron spectroscopy (XPS) analysis, it is confirmed that fluorocarbon-based layers such as C-F and C-F2 with lower etch rates are also formed.

To develop flexible adsorbents for compact volatile organic compound (VOC) air purifiers, flexible as-spun zeolite fibers are prepared by an electrospinning method, and then zeolite particles are exposed as active sites for VOC (toluene) adsorption on the surface of the fibers by a thermal surface partial etching process. The breakthrough curves for the adsorption and temperature programmed desorption (TPD) curves of toluene over the flexible zeolite fibers is investigated as a function of the thermal etching temperature by gas chromatography (GC), and the adsorption/desorption characteristics improves with an increase in the thermal surface etching temperature. The effect of acidity on the flexible zeolite fibers for the removal of toluene is investigated as a function of the SiO2/Al2O3 ratios of zeolites. The acidity of the flexible zeolite fibers with different SiO2/Al2O3 ratios is measured by ammonia-temperature-programmed desorption (NH3-TPD), and the adsorption/desorption characteristics are investigated by GC. The results of the toluene adsorption/desorption experiments confirm that a higher SiO2/ Al2O3 ratio of the flexible zeolite fibers creates a better toluene adsorption/desorption performance.

Surface plasmon resonance is the resonant oscillation of conduction electrons at the interface between negative and positive permittivity material stimulated by incident light. In particular, when light transmits through the metallic microhole structures, it shows an increased intensity of light. Thus, it is used to increase the efficiency of devices such as LEDs, solar cells, and sensors. There are various methods to make micro-hole structures. In this experiment, micro holes are formed using a wet chemical etching method, which is inexpensive and can be mass processed. The shape of the holes depends on crystal facets, temperature, the concentration of the etchant solution, and etching time. We select a GaAs(100) single crystal wafer in this experiment and satisfactory results are obtained under the ratio of etchant solution with H2SO4:H2O2:H2O = 1:5:5. The morphology of micro holes according to the temperature and time is observed using field emission - scanning electron microscopy (FE-SEM). The etching mechanism at the corners and sidewalls is explained through the configuration of atoms.

Silica is used in shell materials to minimize oxidation and aggregation of nanoparticles. Particularly, porous silica has gained attention because of its performance in adsorption, catalysis, and medical applications. In this study, to investigate the effect of the density of the silica coating layer on the color of the pigment, we arbitrarily change the structure of a silica layer using an etchant. We use NaOH or NH4OH to etch the silica coating layer. First, we synthesize α-FeOOH for a length of 400 nm and coat it with TEOS to fabricate particles with a 50 nm coating layer. The coating thickness is then adjusted to 30–40 nm by etching the silica layer for 5 h. Four different shapes of α-FeOOH with different colors are measured using UV–vis light. From the color changes of the four different shapes of α-FeOOH features during coating or etching, the L* value is observed to increase and brighten the overall color, and the b* value increases to impart a clear yellow color to the pigment. The brightest yellow color was that coated with silica; if the sample is etched with NaOH or NH4OH, the b* value can be controlled to study the yellow colors.

Surface morphology and optical properties such as transmittance and haze effect of glass etched by physical and chemical etching processes were investigated. The physical etching process was carried out by pen type sandblasting process with 15~20 μm dia. of Al2O3 media; the chemical etching process was conducted using HF-based mixed etchant. Sandblasting was performed in terms of variables such as the distance of 8 cm between the gun nozzle and the glass substrate, the fixed air pressure of 0.5bar, and the constant speed control of the specimen stage. The chemical etching process was conducted with mixed etching solution prepared by combination of BHF (Buffered Hydrofluoric Acid), HCl, and distilled water. The morphology of the glass surface after sandblasting process displayed sharp collision vestiges with nonuniform shapes that could initiate fractures. The haze values of the sandblasted glass were quantitatively acceptable. However, based on visual observation, the desirable Anti-Glare effect was not achieved. On the other hand, irregularly shaped and sharp vestiges transformed into enlarged and smooth micro-spherical craters with the subsequent chemical etching process. The curvature of the spherical crater increased distinctly by 60 minutes and decreased gradually with increasing etching time. Further, the spherical craters with reduced curvature were uniformly distributed over the etched glass surface. The haze value increased sharply up to 55 % and the transmittance decreased by 90 % at 60 minutes of etching time. The ideal haze value range of 3~7 % and transmittance value range of above 90 % were achieved in the period of 240 to 720 minutes of etching time for the selected concentration of the chemical etchant.

Reactive Ion Etching (RIE) and wet etching are employed in existing texturing processes to fabricate solar cells. Laser etching is used for particular purposes such as selective etching for grooves. However, such processes require a higher level of cost and longer processing time and those factors affect the unit cost of each process of fabricating solar cells. As a way to reduce the unit cost of this process of making solar cells, an atmospheric plasma source will be employed in this study for the texturing of crystalline silicon wafers. In this study, we produced the atmospheric plasma source and examined its basic properties. Then, using the prepared atmospheric plasma source, we performed the texturing process of crystalline silicon wafers. The results obtained from texturing processes employing the atmospheric plasma source and employing RIE were examined and compared with each other. The average reflectance of the specimens obtained from the atmospheric plasma texturing process was 7.88 %, while that of specimens obtained from the texturing process employing RIE was 8.04 %. Surface morphologies of textured wafers were examined and measured through Scanning Electron Microscopy (SEM) and similar shapes of reactive ion etched wafers were found. The Power Conversion Efficiencies (PCE) of the solar cells manufactured through each process were 16.97 % (atmospheric plasma texturing) and 16.29% (RIE texturing).

본 연구에서는 역삼투막의 내오염성을 향상시키기 위해 실란 커플링제로 표 면 개질하여 steric hinderance를 일으키고 에폭시 코팅으로 친수성을 향상시키고자 하였다. 상용 역삼투막을 UV로 식각하여 표면을 활성화한 후 말단기가 다 른 실란 커플링제를 sol-gel 공법으로 표면 개질하고 에폭시를 이용하여 코팅하였다. 그 결과, 친수성 및 내오염성이 향상된 것을 확인하였고, FT-IR, SEM, XPS 를 통해 막의 특성을 분석하였다.

There has been an increase of using Bosch Process to fabricate MEMS Device, TSV, Power chip for straight etching profile. Essentially, the interest of TSV technology is rapidly floated, accordingly the demand of Bosch Process is able to hold the prominent position for straight etching of Si or another wafers. Recently, the process to prevent under etching or over etching using EPD equipment is widely used for improvement of mechanical, electrical properties of devices. As an EPD device, the OES is widely used to find accurate end point of etching. However, it is difficult to maintain the light source from view port of chamber because of contamination caused by ion conflict and byproducts in the chamber. In this study, we adapted the SPOES to avoid lose of signal and detect less open ratio under 1 %. We use 12inch Si wafer and execute the through etching 500um of thickness. Furthermore, to get the clear EPD data, we developed an algorithm to only receive the etching part without deposition part. The results showed possible to find End Point of under 1 % of open ratio etching process.

Micro-electromechanical systems (MEMS) 구조물용 고 종횡비의 외팔보 제작을 목적으로 초임계 이산화탄 소를 사용한 건식 식각 실험을 진행하였다. 건식 식각 실험은 초임계 이산화탄소에 50% 불산 (HF) 원액과 공용매 (물, 메탄올, 에탄올, 이소프로필 알콜)를 사용하여 진행되었다. 희생 실리카 층을 식각하여 드러난 MEMS 외팔보 빔 은 주사전자현미경을 이용하여 관찰하였다. HF원액을 사용한 건식 식각 실험은 종횡비 1 : 150의 외팔보 빔까지 기 판과 접착없이 단독으로 서 있는 형태로 제작되었다. 공용매로 메탄올과 에탄올을 사용한 건식 식각의 결과에서는 종 횡비 1 : 75 까지 접착없이 제작할 수 있었고, 이소프로필 알콜을 공용매로 첨가한 실험 결과에서는 종횡비 1 : 37.5 까지 접착없이 제작할 수 있었다. 본 연구의 결과 건식 식각과정에서 알콜계 공용매의 첨가는 대체로 식각 성능을 저 하시킴을 알 수 있었다.

The expansion of the display market could mass-produce the product which becomes the super-slim and ultra-lighting according to the demand of customer. This change etched the mobile display panel in order to make the thin glass. The wet etching refers to the process of removing selectively the unnecessary part in order to form the circuit pattern among the semi-conductor or the LCD manufacturing process. The wet etching can progress the etching about a large amount at a time but the thickness of glass is not smooth or not etched according to the process condition. In this study, the defect factor in the etching process tries to be analyze. The experimental design was established and the processing condition was optimized in order to minimize under non-etch part generation by the experiment of design.

The relationship the between electrical properties and surface roughness (Ra) of a wet-etched silicon wafer were studied. Ra was measured by an alpha-step process and atomic force microscopy (AFM) while varying the measuring range 10×10, 40×40, and 1000×1000μm. The resistivity was measured by assessing the surface resistance using a four-point probe method. The relationship between the resistivity and Ra was explained in terms of the surface roughness. The minimum error value between the experimental and theoretical resistivities was 4.23% when the Ra was in a range of 10×10μm according to AFM measurement. The maximum error value was 14.09% when the Ra was in a range of 40×40μm according to AFM measurement. Thus, the resistivity could be estimated when the Ra was in a narrow range.

The electrical properties and surface morphology changes of a silicon wafer as a function of the HF concentration as the wafer is etched were studied. The HF concentrations were 28, 30, 32, 34, and 36 wt%. The surface morphology changes of the silicon wafer were measured by an SEM (80˚ tilted at ×200) and the resistivity was measured by assessing the surface resistance using a four-point probe method. The etching rate increased as the HF concentration increased. The maximum etching rate 27.31 μm/min was achieved at an HF concentration of 36 wt%. A concave wave formed on the wafer after the wet etching process. The size of the wave was largest and the resistivity reached 7.54 ohm·cm at an 30 wt% of HF concentration. At an HF concentration of 30 wt%, therefore, a silicon wafer should have good joining strength with a metal backing as well as good electrical properties.

초임계 건식 식각 공정에서 HF수용액을 초임계 이산화탄소에 녹인 식각용액을 사용하여 희생막으로 사용되는 테트라에톡시실란막 (TEOS막) 층에 대한 식각성능을 조사하였다. HF에 대한 물의 조성에 따른산화막 식각률의 비교를 통하여 식각에 가장 효과적인 비율을 조사하였다. 50 wt%의 HF수용액을 이용하여 초임계 이산화탄소에서 TEOS막의 건식식각을 진행 할 경우, 990nm/min의 높은 식각속도와 잔여물이 전혀 남지 않는 우수한 식각성능을 확인할 수 있었다.