In order to determine the wear properties of CVD ceramic coatings, wear process was evaluated using the coated pin of Falex Tribosystem. Also, in order to determine the effects of coating material on wear process, TiC,N of thickness 5m∼6m coated by Thermal CVD method were applied. The wear property of TiC,N film, the higher the deposition temperature was, the closer the lattice parameter was to the amount of the standard power, and the grain size increased. According to the wear formation, under the control that there is on specific wear rate wear parameter and coating delamination, decrease with increasing sliding friction and when the coating delamination happened.

The ZnO thin films were grown on GaN template substrates by RF magnetron sputtering at different RF powers and n-ZnO/p-GaN heterojunction LEDs were fabricated to investigate the effect of the RF power on the characteristics of the n-ZnO/p-GaN LEDs. For the growth of the ZnO thin films, the substrate temperature was kept constant at 200˚C and the RF power was varied within the range of 200 to 500W at different growth times to deposit films of 100 nm thick. The electrical, optical and structural properties of ZnO thin films were investigated by ellipsometry, X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL) and by assessing the Hall effect. The characteristics of the n-ZnO/p-GaN LEDs were evaluated by current-voltage (I-V) and electroluminescence (EL) measurements. ZnO thin films were grown with a preferred c-axis orientation along the (0002) plane. The XRD peaks shifted to low angles and the surface roughness became non-uniform with an increase in the RF power. Also, the PL emission peak was red-shifted. The carrier density and the mobility decreased with the RF power. For the n-ZnO/p-GaN LED, the forward current at 20 V decreased and the threshold voltage increased with the RF power. The EL emission peak was observed at approximately 435 nm and the luminescence intensity decreased. Consequently, the crystallinity of the ZnO thin films grown with RF sputtering powers were improved. However, excess Zn affected the structural, electrical and optical properties of the ZnO thin films when the optimal RF power was exceeded. This excess RF power will degrade the characteristics of light emitting devices.

본 연구의 목적은 소집단 활동에서 과학영재들의 의사소통 구조를 찾아보고, 이들의 의사소통 유형과 성취 수준의 관계를 알아보기 위한 것이다. 이를 위하여 과학영재들을 대상으로 5명을 한 단위로 하는 8개 소집단을 구성하고, 이들에게 지구의 밀도 구하기라는 주제로 토론식 수업을 적용하였다. Pajek과 UCINET 6.0을 활용하여 과학영재들의 대화로부터 의사소통 구조와 성취 수준을 분석하였다. 그 결과 상호작용 분산 정도에 따라 과학영재들의 의사소통 유형을 독점형과 공유형으로 분류할 수 있었다. 그리고 상호작용 밀도와 집중도에 따라 과학영재들의 의사소통 유형을 DH·NH형, DH·NL형, DL·NH형, DL·NL형으로 분류할 수 있었다. 과학영재들의 소집단 활동에서 문제 해결 성취 수준은 구성원 간 상호작용의 분산이 아니라 상호작용의 밀도와 연결망 집중도의 차에 의해 영향을 받는다는 것을 알 수 있었다. 그러므로 교사들은 소집단 활동을 활용하여 학생들을 지도할 때 문제 해결에 관련된 의사소통이 이루어지도록 지도할 필요가 있다.

The optimization of dewatering and impregnation soaking (DIS) process for a concentrated Aloe vera product was investigated using Taguchi method in combination with desirability function analysis. Polyethylene glycol (PEG) as osmotic agent was adopted, and soaking temperature (T), immersion time (t), PEG concentration (C), PEG molecular weight (MW), and thickness of Aloe vera leaf slice (x) were selected as affecting variables. L16 (45) orthogonal array was designed by Taguchi method with four parameters such as water loss, solid gain, glucomannan, and anthraquinone contents as objective functions. An overall quality index was transformed from individual objective functions, and was optimized finally. The optimal setting for maximum overall desirability was obtained at 55oC (T), 2 hr (t), 40% w/v (C), 0.5 cm (x), and 4,000 Da. (MW). The obtained overall desirability was 0.7842. The order of affecting factors was T>C>x>MW≈x>t and the experimental results under optimum condition were similar to the prediction of an overall desirability of 0.8384. Also, it was found that the optimized DIS condition could be reproduced for a minimally processed Aloe vera product with high quality.

본 연구는 RCP 4종 시나리오(RCP 2.6, RCP 4.5, RCP 6.0, RCP 8.5)를 적용하여 얻어진 2100년까지의 대기온도 상승값을 해수면 상승 계산방법 중에 하나인 반경험식법(Semi-empirical method)에 적용하여 해수면 상승치를 예측하였다. RCP 4종 시나리오에서 얻어진 결과에 따르면 모든 시나리오에서 해수면이 꾸준히 상승하고 있음을 알 수 있었다. 2050년도까지 RCP 4종 시나리오에 대한 해수면 상승의 차이가 최대 0.08 m 이내였으나 2100년도에는 최대 0.5 m까지 해수면 상승의 격차를 보이고 있었다. RCP 2.6, RCP 4.5, RCP 6.0, RCP 8.5 시나리오의 2100년도 해수면 예상 상승치는 각각 0.87 m, 1.21 m, 1.02 m, 1.36 m였다. RCP 8.5시나리오는 2060년 이후로 대기온도 상승치가 다른 시나리오에 비해 급상승하는데, 2100년 이후 다른 시나리오와의 해수면 상승 격차는 더 커질 것으로 예상된다. 단순한 비례식으로 추정하면, 2080년도에 RCP 4종 시나리오의 최대 격차가 0.21 m였으나 20년 후인 2100년에는 그 두 배가 넘는 최대 0.5 m였다. 따라서 2120년에는 그 격차가 1.2 m 이상 될 수도 있다.

(Na, K) NbO3 thick film was successfully achieved using a sol-gel coating process with the addition of polyvinylpyrrolidone (PVP) to a metal alkoxide solution. The transparent coating solution, mixed with Nb:PVP = 1:1 in a molar ration, was synthesized by evaporating the solvent to over 62.5 wt%. Additive PVP increased the viscosity of the solution so that the coating thickness could be enhanced. The thickness of the (Na, K) NbO3 film assisted by PVP was ca. 320 nm at the time of deposition; this value is four times thicker than that of the sample fabricated without PVP. Also, due to PVP binding with the OH groups of the metal alkoxide, the condensation reaction in the film was suppressed. The crystalline size of the (Na, K) NbO3 films assisted by PVP was ca. 15 nm smaller than that of the film fabricated without PVP. After the sintering process at 700˚C, the (Na, K) NbO3 films were mainly composed of randomly oriented (Na, K) NbO3 phase of perovskite crystal structure, including a somewhat secondary phase of K2Nb4O11. However, by adding PVP, the content of the secondary phase became quite smaller than that of the sample without PVP. It was thought that the addition of PVP might have the effect of restraining the loss of potassium and that PVP could hold metalloxane by strong hydrogen bonding before complete decomposition. Therefore, the film thickness of the (Na, K) NbO3 films could be considerably advanced and made more crack-free by the addition of PVP.

본 연구에서는 CVD법으로 세라믹 막을 제조하였다. 튜브의 α-Al2O3 지지체 위에 Ga 염이 첨가된 γ-Al2O3를 코팅하였고, 실란화합물인 tetramethylorthosilane (TMOS) 를 650℃에서 화학적 기상 증착법으로 막에 증착하였다. 제조된 세라믹 막을 사용하여 수소, 질소, 이산화탄소, 메탄의 단일조성 기체투과 실험을 600℃에서 시행하였다. Ga 염 비첨가 시, 600℃ 수분 처리 실험의 H2/N2 선택도가 926에서 829로 감소한 반면, Ga 염 첨가 시에는 910에서 904로 안정하였다. 이 결과를 통해, 막에 금속염을 첨가하여 제조한 막이 수분 안정성을 향상시킴을 확인하였다.

We have grown AlN nanorods and AlN films using plasma-assisted molecular beam epitaxy by changing the Al source flux. Plasma-assisted molecular beam epitaxy of AlN was performed on c-plane Al2O3 substrates with different levels of aluminum (Al) flux but with the same nitrogen flux. Growth behavior of AlN was strongly affected by Al flux, as determined by in-situ reflection high energy electron diffraction. Prior to the growth, nitridation of the Al2O3 substrate was performed and a two-dimensionally grown AlN layer was formed by the nitridation process, in which the epitaxial relationship was determined to be [11-20]AlN//[10-10]Al2O3, and [10-10]AlN//[11-20]Al2O3. In the growth of AlN films after nitridation, vertically aligned nanorod-structured AlN was grown with a growth rate of 1.6μm/h, in which the growth direction was<0001>, for low Al flux. However, with high Al flux, Al droplets with diameters of about 8μm were found, which implies an Al-rich growth environment. With moderate Al flux conditions, epitaxial AlN films were grown. Growth was maintained in two-dimensional or three-dimensional growth mode depending on the Al flux during the growth; however, final growth occurred in three-dimensional growth mode. A lowest root mean square roughness of 0.6 nm (for 2μm×2μm area) was obtained, which indicates a very flat surface.

산업곤충의 위해성 평가를 위한 우리나라의 법과 제도를 개선하기 위하여, 국내외 법과 제도 및 국제동향을 검토하고 평가하였다. ｢곤충산업의 육성 및 지원에 관한 법률｣의 대상인 산업곤충의 대부분은 외래종에 해당한다. 특히 이들 외래종의 일부는 생태계를 교란시키는 침입 외래종(Invasive Alien Species, IAS) 일 수 있으며, 생물다양성 보전을 위협하고 농업･임업･어업과 인간의 경제활동에까지 큰 피해를 야기할 수 있다. 생물다양성협약(Convention on Biological Diversity, CBD)과 국제식물보호협약(International Plant Protection Convention, IPPC)을 포함하는 국제협약에서는 침입 외래종 도입을 사전에 방지하고, 이미 도입된 침입 외래종의 퇴치 및 방제를 강조하고 있다. 미국, 호주 등의 선진국은 침입 외래종의 도입과 방제를 위하여 정부차원의 통합관리체계를 구축하여 관련 부처간의 협력체계를 유지하고 있다. 우리나라의 경우에도 침입 외래종에 대한 피해를 최소화하기 위하여 기존의 여러 법과 정부 부처에서 외래종 문제를 다루고 있다. 그럼에도 ｢곤충산업의 육성 및 지원에 관한 법률｣의 제정 및 이로 인한 외래곤충의 산업적 이용에 의해 야기될 수 있는 생태계 교란 가능성을 방제할 수 있는 국내의 법과 제도는 미흡한 실정이다. 국내 산업곤충 위해성 평가 및 외래종 관련 여러 법과 제도는 곤충을 산업적으로 이용하고자 하는 신청인(또는 기업)이 해당 곤충을 국내의 새로운 서식지로 도입하고, 방출하여 산업적인 목적으로 활용하고자 하는 절차 및 위해성 평가방법 등이 명시되어 있지 않다. 본 연구에서는 곤충을 새로운 서식지에 도입하고 산업적으로 활용하기 위한 국내 관련 법･제도를 검토하였으며, 이에 대한 선진국의 위해성 평가 체계와 비교･분석하였고, 국내 산업곤충 위해성 평가 및 관리와 산업적 활용을 위한 법･제도를 논의하고 있다.

해양에서 발생하는 사고는 선박, 선원 및 해운기업뿐만 아니라 사회 전반에도 매우 큰 영향을 미치며, 따라서 해양사고가 발생하였을 경우, 이를 신속하고 효율적으로 구난하는 것은 매우 중요하다. 특히, 대규모 해양오염이나 인명사고를 수반하는 해양사고는 매우 심각한 피해를 발생시킬 수 있기 때문에 해양사고를 당한 인명, 선박 및 재산을 효율적이고, 신속하게 구난하는 것은 특히 중요하다. 그러나 국내의 해양구난을 위한 역량은 매우 빈약한 상황이며, 비교적 좋은 장비 등을 갖추고 있는 해양경찰 또는 해군 등 공공부문과는 달리 민간구난업은 매우 열악한 기술적 및 경제적 상황에 처해 있다. 해양구난은 단순히 경제적 측면의 중요성뿐만 아니라 국가 안보적 측면에서의 중요성도 있기 때문에 이를 활성화하는 것은 매우 중요한 문제이다. 이에 본고에서 해양구난을 활성화하기 위한 방안을 법제도적 측면에서 검토하고 관련 개선방안을 제시하고자 한다. 개선안은 민간 및 공공부문을 포함한 전체적 활성화 방안과 민간부문의 활성화 방안을 제시하였다.

TiO2 thin films consisting of positively charged poly(diallyldimethylammonium chloride)(PDDA) and negatively charged titanium(IV) bis(ammonium lactato) dihydroxide(TALH) were successfully fabricated on glass beads by a layer-by-layer(LBL) self-assembly method. The glass beads used here showed a positive charge in an acid range and negative charge in an alkaline range. The glass beads coated with the coating sequence of(PDDA/TALH)n showed a change in the surface morphology as a function of the number of bilayers. When the number of bilayers(n) of the(PDDA/TALH) thin film was 20, Ti element was observed on the surface of the coated glass beads. The thin films coated onto the glass beads had a main peak of the (101) crystal face and were highly crystallized with XRD diffraction peaks of anatase-type TiO2 according to an XRD analysis. In addition, the TiO2 thin films showed photocatalytic properties such that they could decompose a methyl orange solution under illumination with UV light. As the number of bilayers of the(PDDA/TALH) thin film increased, the photocatalytic property of the TiO2-coated glass beads increased with the increase in the thin film thickness. The surface morphologies and optical properties of glass beads coated with TiO2 thin films with different coating numbers were measured by field emission scanning electron microscopy(FE-SEM), X-ray diffraction(XRD) and by UV-Vis spectrophotometry(UV-vis).

Li1+xAlxTi2-x(PO4)3(LATP) is a promising solid electrolyte for all-solid-state Li ion batteries. In this study, LATP isprepared through a sol-gel method using relatively the inexpensive reagents TiCl4. The thermal behavior, structuralcharacteristics, fractured surface morphology, ion conductivity, and activation energy of the LATP sintered bodies areinvestigated by TG-DTA, X-ray diffraction, FE-SEM, and by an impedance method. A gelation powder was calcined at 500oC.A single crystalline phase of the LiTi2(PO4)3(LTP) system was obtained at a calcination temperature above 650oC. The obtainedpowder was pelletized and sintered at 900oC and 1000oC. The LTP sintered at 900~1000oC for 6 h had a relatively low apparentdensity of 75~80%. The LATP(x=0.3) pellet sintered at 900oC for 6 h was denser than those sintered under other conditionsand showed the highest ion conductivity of 4.50×10−5S/cm at room temperature. However, the ion conductivity of LATP(x=0.3) sintered at 1000oC decreased to 1.81×10−5S/cm, leading to Li volatilization and abnormal grain growth. For LATPsintered at 900oC for 6 h, x=0.3 shows the lowest activation energy of 0.42eV in the temperature range of room temperatureto 300oC.

YAG:Ce yellow phosphor particles were synthesized by spray pyrolysis with changing the solution properties and their luminous properties, crystal structure, and morphological changes were studied by using PL measurement, XRD, and SEM analysis. It was clear that the solution properties significantly affected the crystal phase, crystallite size, the PL intensity, and the morphology of YAG:Ce particles. At low calcination temperature, the addition of urea only to the spray solution was helpful to form a pure YAG phase without any impurity phases, as the result, the highest luminescence intensity was achieved at the calcination temperature of . When the calcination temperatures were larger than , however, the YAG particles prepared without any additive showed the highest luminescent intensity. Regardless of the solution conditions, the emission intensity of YAG:Ce particles prepared by spray pyrolysis showed a linear relation with the crystallite size. In terms of the morphology of YAG:Ce particles, the addition of both DCCA and to the spray solution was effective to prepare a spherical and dense structured YAG particles.

이 논문은 그 제목을 ‘북한의 명승지ᆞ천연기념물보호와 관련한 법 제도에 관한 고찰’이라고 정하였다. 현재의 남북한이 장래에 통일을 할 경우에 제도적 통합과정에서 통일한국의 명승지 및 천연기념물보호법을 어떻게 재편하여야 하는지, 그리고 그러한 재편과정에서 무엇을 고려하여야 하는지를 논리적으로 검증하는 것은 중요한 의미가 있다. 물론 장래에 어떠한 문제가 발생할 것인지를 현재의 시점에서 정확하게 예측할 수는 없다. 그러나 그것이 사회질서를 규율하는 제도라고 한다면 불합리한 결과가 발생되지 않도록 그 위험성을 최소화할 수 있는 방법이 모색되어야 한다. 특히 최근에 명승지, 천연기념물의 중요성이 날로 증대되고 있다는 점을 고려한다면, 북한의 명승지 및 천연기념물의 보호와 관련한 법 제도가 어떠한 모습으로 운용되고 있는지를 검토할 필요성이 있다. 북한의 명승지ᆞ천연기념물보호법은 1995년 12월 13일 최고인민회의 상설회의 결정 제64호로 채택되어 제정된 이후에 1999년 1월 14일 최고인민회의 상임위원회 정령 제350호로 수정되었다. 본고에서는 수정된 북한의 명승지ᆞ천연기념물보호법의 주요내용을 검토하면서 대한민국의 명승지ᆞ천연기념물보호법과 어떠한 점에서 규범적 차이가 있는지에 관하여 비교 및 분석함으로서 북한 명승지ᆞ천연기념물보호법의 문제점이 무엇이며, 남북한이 명승지 및 천연기념물과 관련한 법제도를 통합함에 있어서 어떠한 점을 고려하여야 하는지에 관하여 검토하였다.

We report plasma-assisted molecular beam epitaxy of InXGa1-XN films on c-plane sapphire substrates. Prior to thegrowth of InXGa1-XN films, GaN film was grown on the nitride c-plane sapphire substrate by two-dimensional (2D) growthmode. For the growth of GaN, Ga flux of 3.7×10−8 torr as a beam equivalent pressure (BEP) and a plasma power of 150W with a nitrogen flow rate of 0.76 sccm were fixed. The growth of 2D GaN growth was confirmed by in-situ reflection high-energy electron diffraction (RHEED) by observing a streaky RHEED pattern with a strong specular spot. InN films showedlower growth rates even with the same growth conditions (same growth temperature, same plasma condition, and same BEPvalue of III element) than those of GaN films. It was observed that the growth rate of GaN is 1.7 times higher than that ofInN, which is probably caused by the higher vapor pressure of In. For the growth of InxGa1-xN films with different Incompositions, total III-element flux (Ga plus In BEPs) was set to 3.7×10−8 torr, which was the BEP value for the 2D growthof GaN. The In compositions of the InxGa1-xN films were determined to be 28, 41, 45, and 53% based on the peak positionof (0002) reflection in x-ray θ-2θ measurements. The growth of InxGa1-xN films did not show a streaky RHEED pattern butshowed spotty patterns with weak streaky lines. This means that the net sticking coefficients of In and Ga, considered basedon the growth rates of GaN and InN, are not the only factor governing the growth mode; another factor such as migrationvelocity should be considered. The sample with an In composition of 41% showed the lowest full width at half maximum valueof 0.20 degree from the x-ray (0002) omega rocking curve measurements and the lowest root mean square roughness valueof 0.71nm.