In this study, two alignment methods were used to create a Fringe-Field Switching (FFS) mode liquid crystal device using an organic thin film (polyimide: PI) as an alignment layer. In addition, the electro-optical (EO) characteristics of the liquid crystal device manufactured in this way were investigated to evaluate the feasibility of mass production application of the technology. In general, the photo-alignment method using unpolarized ultraviolet rays can obtain a relatively low pretilt angle, so a liquid crystal device in FFS mode, which is a driving mode of the liquid crystal device that reflects the characteristics of liquid crystal alignment, was manufactured, and the liquid crystal has a high reactivity with the alignment film. Considering this, nematic liquid crystal (NLC) was used. In addition, in order to improve the misalignment, it was observed whether more stable orientation occurred by irradiating ultraviolet rays for an additional 1 to 3 hours in the aligned state. As a result of the experiment, it was found that NLC alignment occurs through a photodecomposition reaction caused by unpolarized UV irradiation oblique to the PI surface. In addition to the existing orientation method, UV irradiation was used to achieve a more stable orientation state and stable V-T curve and response characteristics. With liquid crystal alignment completed, more stable orientation characteristics and EO characteristics at the mass production level were obtained through additional UV irradiation for 3 hours. This method can further stabilize the orientation stability caused by existing UV irradiation through an additional process.

This study is about the optical properties of InP-based quantum dot nanoparticles depending on their core/shell structure. The need to synthesize non-cadmium-based quantum dot nanoparticles with high quantum efficiency has become necessary due to the harmful effects of the element cadmium. We synthesized three types of quantum dot nanoparticles in 2000ml three-necked flasks by varying the synthesis temperature and time to have the same PL spectra according to the composition of the core and shell. The PL spectra, absolute quantum efficiency, and nanoparticle size were compared and analyzed according to the composition at red emission wavelengths of 614, 616, and 630 nm. InP/ZnSe/ZnS nanoparticles were synthesized with the highest PL-AQY of 94% at 614 μm, and Ga-doped InP/GaP/ZnSe/ZnS nanoparticles were synthesized with the highest PL-AQY of 97% at 616 μm. InZnP/ZnSe/ZnS nanoparticles with alloy cores were able to synthesize quantum dot nanoparticles with a peak PL-AQY of 98% at 630μm.

Fluorine-doped tin oxide (FTO) has been used as a representative transparent conductive oxide (TCO) in various optoelectronic applications, including light emitting diodes, solar cells, photo-detectors, and electrochromic devices. The FTO plays an important role in providing electron transfer between active layers and external circuits while maintaining high transmittance in the devices. Herein, we report the effects of substrate rotation speed on the electrical and optical properties of FTO films during ultrasonic spray pyrolysis deposition (USPD). The substrate rotation speeds were adjusted to 2, 6, 10, and 14 rpm. As the substrate rotation speed increased from 2 to 14 rpm, the FTO films exhibited different film morphologies, including crystallite size, surface roughness, crystal texture, and film thickness. This FTO film engineering can be attributed to the variable nucleation and growth behaviors of FTO crystallites according to substrate rotation speeds during USPD. Among the FTO films with different substrate rotation speeds, the FTO film fabricated at 6 rpm showed the best optimized TCO characteristics when considering both electrical (sheet resistance of 13.73 Ω/□) and optical (average transmittance of 86.76 % at 400~700 nm) properties with a figure of merit (0.018 Ω-1).

ZnO/Cu/ZnO (ZCZ) thin films were deposited at room temperature on a glass substrate using direct current (DC) and radio frequency (RF, 13.56 MHz) magnetron sputtering and then the effect of post-deposition electron irradiation on the structural, optical, electrical and transparent heater properties of the films were considered. ZCZ films that were electron beam irradiated at 500 eV showed an increase in the grain sizes of their ZnO(102) and (201) planes to 15.17 nm and 11.51 nm, respectively, from grain sizes of 13.50 nm and 10.60 nm observed in the as deposited films. In addition, the film’s optical and electrical properties also depended on the electron irradiation energies. The highest opto-electrical performance was observed in films electron irradiated at 500 eV. In a heat radiation test, when a bias voltage of 18 V was applied to the film that had been electron irradiated at 500 eV, its steady state temperature was about 90.5 °C. In a repetition test, it reached the steady state temperature within 60 s at all bias voltages.

Transparent conductive tungsten (W) doped indium oxide (In2O3; IWO) films were deposited at different substrate bias voltage (-Vb) conditions at room temperature on glass substrates by radio frequency (RF) magnetron sputtering and the influence of the substrate bias voltage on the optical and electrical properties was investigated. As the substrate bias voltage increased to -350 Vb, the IWO films showed a lower resistivity of 2.06 × 10-4 Ωcm. The lowest resistivity observed for the film deposited at -350 Vb could be attributed to its higher mobility, of 31.8 cm2/Vs compared with that (6.2 cm2/Vs) of the films deposited without a substrate bias voltage (0 Vb). The highest visible transmittance of 84.1 % was also observed for the films deposited at the -350 Vb condition. The X-ray diffraction observation indicated the IWO films deposited without substrate bias voltage were amorphous phase without any diffraction peaks, while the films deposited with bias voltage were polycrystalline with a low In2O3 (222) diffraction peak and relatively high intensity (431) and (046) diffraction peaks. From the observed visible transmittance and electrical properties, it is concluded that the opto-electrical performance of the polycrystalline IWO film deposited by RF magnetron sputtering can be enhanced with effective substrate bias voltage conditions.

AZO/Cu/AZO thin films were deposited on glass by RF magnetron sputtering. The specimens showed the preferred orientation of (0002) AZO and (111) Cu. The Cu crystal sizes increased from about 3.7 nm to about 8.5 nm with increasing Cu thickness, and from about 6.3 nm to about 9.5 nm with increasing heat treatment temperatures. The sizes of AZO crystals were almost independent of the Cu thickness, and increased slightly with heat treatment temperature. The residual stress of AZO after heat treatment also increased compressively from -4.6 GPa to -5.6 GPa with increasing heat treatment temperature. The increase in crystal size resulted from grain growth, and the increase in stress resulted from the decrease in defects that accompanied grain growth, and the thermal stress during cooling from heat treatment temperature to room temperature. From the PL spectra, the decrease in defects during heat treatment resulted in the increased intensity. The electrical resistivities of the 4 nm Cu film were 5.9 × 10-4 Ω ‧ cm and about 1.0 × 10-4 Ω ‧ cm for thicker Cu films. The resistivity decreased as the temperature of heat treatment increased. As the Cu thickness increased, an increase in carrier concentration resulted, as the fraction of AZO/Cu/AZO metal film increased. And the increase in carrier concentration with increasing heat treatment temperature might result from the diffusion of Cu ions into AZO. Transmittance decreased with increasing Cu thicknesses, and reached a maximum near the 500 nm wavelength after being heat treated at 200 °C.

In this study, lanthanum boron silicate glasses were prepared with a composition of x Li2O-(60-x)B2O3-5CaO- 5BaO-7ZnO-10SiO2-10La2O3-3Y2O3 where x = 1,3,5,7, and 9 mol%. Each composition was melted in a platinum crucible under atmospheric conditions at 1,400 °C for 2 h. Clear glasses with a transmittance exceeding 85 % were fabricated. Their optical, thermal, and physical properties, such as refractive index, Abbe number, density, glass transition (Tg) and Knoop hardness were studied. The results demonstrated that refractive index was between 1.6859 and 1.6953 at 589.3 nm. The Abbe number was calculated using an equation for 589.3 nm (nd), 656.3 nm (nf) and 486.1 nm (nc) and was observed to be in the range from 57.5 to 62.6. As the Li2O content increased, the glass transition temperature of the optical glass decreased from 608 °C to 564 °C. If glass mold pressing is performed using a material with a low transition temperature and high mechanical strength, then the optical glasses developed in this study can be completely commercialized.

In this study, Barium Germanium glasses were prepared with a composition of xBaO-(72-x)GeO2-8La2O3-20ZnO where x = 16.0, 18.0, 20.0, 22.0 and 24.0 mol% respectively. Their physical and optical properties, such as refractiveness index, glass transition temperature (Tg), softening temperature (Ts), transmittance and Knoop hardness were studied. The results showed that refractive index, Tg, Ts and coefficient of thermal expansion (CTE) increased with increasing BaO concentration. The refractive index of all the prepared samples was observed between 1.7811 to 1.7881. The Abbe number was calculated by formula using nd (589.3 nm), nf (656.3 nm) and nc (486.1 nm) and observed to be between 38 to 40. The Abbe number of the prepared sample was similar to that of BaO and GeO2. The transmittance of the prepared glasses was observed to be between 80 ~ 82 % throughout the range from 200 nm to 800 nm. Knoop hardness divided into seven steps were measured 5 class (≥ 450 ~ < 550) of all prepared samples.

목적 : SMILE 수술 후 발생하는 광학적 현상을 이론적으로 분석하고, 렌티큘 절삭량에 따른 교정시력의 변화 를 분석하였다. 방법 : SMILE 수술에서 절삭량에 따른 초점거리 및 수차의 변화를 Listing의 생략안을 기반으로 광선추적을 사용하여 이론적으로 분석하였다. 결과 : 수술부위 절삭량이 증가할수록 교정시력은 향상되었다. 교정시력이 향상될수록 수술부위와 수술부위 외 부의 곡률차이가 증가하게 되며 이로 인하여 구면수차가 증가하게 된다. 결론 : 근시가 증가할수록 수술 부위와 외부 곡률의 차이로 인하여 구면수차가 증가한다. 수술 후 수차의 증가 는 수차 분석 결과에 의해 수술 중 발생하는 광학적 현상임을 확인하였다. 수술 후 나타나는 다양한 증상과 후광 및 눈부심의 원인을 이론적으로 분석하기 위해서는 다양한 수술 사례를 활용한 후속 연구가 필요하다고 판단된다.

Recently, as the demand for a non-contact liquid crystal alignment method capable of improving viewing angle characteristics has spread throughout the industry, various non-contact liquid crystal alignment methods, including conventional UV light alignment, are being actively studied. In the case of UV light alignment, it is currently applied to mass production in many fields and shows relatively excellent initial characteristics, but there is a problem of display quality deterioration over time. In this study, among these non-contact liquid crystal alignment methods, the liquid crystal is oriented by quantitatively irradiating an ion beam onto the SiOF inorganic film, which has excellent initial characteristics and does not cause deterioration in quality over time., the electro-optical properties were evaluated by manufacturing a commercial-level IPS (In-Plane Switching) liquid crystal cell. In particular, in the case of such inorganic film orientation, it is common to have many problems with orientation stability, but the evaluation cell manufactured by the method proposed in this study is capable of maintaining a uniform orientation without losing orientation even after heat treatment at a high temperature of 200°C. could be observed.

산업이 발달함에 따라 이산화탄소, 휘발성 유기 화합물, 일산화탄소 등과 같은 독성 가스의 감지 및 모니터링이 중요시되고 있다. 새롭게 합성된 0 차원의 비납계 무기 페로브스카이트 소재는 광학적 방법과 전기적 방법을 융합하여 사용할 수 있는 가스 센서 특성을 가진다. 친환경 가스 센서는 결정의 상변이를 기반으로, 광학 및 전기적 특성 변화를 가져 하이드록실기 감지가 가능하며, 하이드록실기 극성과의 상관관계를 통해 차세대 센서 소자로의 응용 가능성이 기대된다.

목적 : 3D 시뮬레이션을 통해 구현된 Gullstrand 모형안에서 눈의 광학적 특성을 분석하였다. 방법 : 시뮬레이션 프로그램인 SPEOS를 이용하여 Gullstrand 모형안을 모델링하였다. 결과 : 모델링된 모형안으로 입사된 평행광선은 모두 망막 앞에 결상하는 것으로 나타났으며, 이는 근사 없이 계산한 결과 및 일반적으로 잘 알려진 결과와 일치하였다. 평행광선의 입사 높이에 따른 초점심도를 분석한 결과 입사 높이에 따라 지수 함수 형태로 급격히 감소하였다. 또한 구면수차는 입사광선의 높이에 따라 비선형적으로 증가하였다. 결론 : 본 연구와 같이 생체적으로 접근이 어려운 눈의 광학적 현상은 시뮬레이션에 따른 결과 분석을 통해 이 해도를 좀 더 높일 수 있고, 눈의 다양한 광학적 현상에 적용될 수 있을 것으로 판단된다.

Zinc oxide (ZnO) based transparent conducting oxides (TCO) thin films, are used in many applications such as solar cells, flat panel displays, and LEDs due to their wide bandgap nature and excellent electrical properties. In the present work, fluorine and aluminium-doped ZnO targets are prepared and thin films are deposited on soda-lime glass substrate using a RF magnetron sputtering unit. The aluminium concentration is fixed at 2 wt%, and the fluorine concentration is adjusted between 0 to 2.0 wt% with five different concentrations, namely, Al2ZnO98(AZO), F0.5AZO97.5(FAZO1), F1AZO97(FAZO2), F1.5AZO96.5(FAZO3), and F2AZO96(FAZO4). Thin films are deposited with an RF power of 40 W and working pressure of 5 m Torr at 270 oC. The morphological analysis performed for the thin film reveals that surface roughness decreases in FAZO1 and FAZO2 samples when doped with a small amount of fluorine. Further, optical and electrical properties measured for FAZO1 sample show average optical transmissions of over 89 % in the visible region and 82.5 % in the infrared region, followed by low resistivity and sheet resistance of 3.59 × 10−4 Ωcm and 5.52 Ω/sq, respectively. In future, these thin films with excellent optoelectronic properties can be used for thin-film solar cell and other optoelectronics applications.

Metal-organic frameworks (MOFs) are of significant interest because of their high porosity, which facilitates their utilization in gas storage and catalysis. To enhance their current properties in these applications, it is necessary to elucidate the interactions between molecules in a confined environment that differ from those in bulk conditions. Herein, we study the confined molecular interaction by investigating the solvent-dependent photophysical properties of two different-sized molecules inside MOF-5. Ruthenium tris-bipyridine (Rubpy) and coumarin 153 (C153) are encapsulated in MOF-5. Rubpy with MOF-5 (Rubpy@MOF) is prepared by building MOF-5 around it, resulting in limited space for solvent molecules in the pores. The smaller C153 is encapsulated in the preformed MOF-5 (C153@MOF) by simply soaking the MOF in a concentrated C153 solution. C153@MOF permits more space for solvent molecules in the pore. Their characteristic absorption and emission spectra are examined to elucidate the confined molecular interactions. Rubpy@MOF and C153@MOF exhibit different spectral shifts compared to the guest molecules under bulk conditions. This discrepancy is attributed to the different micro-environments inside the pores, derived from confined host-guest interactions in the interplay of solvent molecules.

PURPOSES : This study aimed to examine the effect of fog on the optical properties of taillights and the relationship between luminous intensity and the visibility distance of taillights on the road. METHODS : Changes in luminous intensity were measured using a light meter. Participants subjectively evaluated visibility distance. The artificial fog was reproduced using weather-generating facilities at the Center of Road Weather Proving Ground (CRPG). RESULTS : As expected, the average luminous intensity under intermediate fog conditions was reduced to 72% compared to normal weather conditions and 44% under heavy fog conditions in the case of the tail lamp-only lit condition. In the case of the tail lamp and brake lamp lit condition, the average luminous intensity was reduced to 76% under heavy fog conditions and 55% under intermediate fog conditions compared to normal dry conditions. In addition, the average visibility distance was reduced by 41% when fog conditions changed from intermediate to heavy in the case of the tail lamp-only lit condition and 39% in the case of the tail lamp and brake lamp lit conditions. Changes in visibility distance corresponding to the gradual change in luminous change were evaluated by participants, and the linearly regressed equations for the relationship between the intensity levels and the visibility distance were derived and examined for their meaning in terms of road traffic safety concerning stopping sight distance. CONCLUSIONS : Luminous intensities were suggested, given the design speeds, to satisfy the minimum stopping distances. In addition, the required speed reduction allowances were suggested given the design speeds if the luminous intensity remains unchanged.

Irradiation of the metal nanoparticles causes local plasmon resonance in a specific wavelength band, which can improve the absorption and scattering properties of a structure. Since noble metal nanoparticles have better resonance effects than those of other metals, it is easy to identify plasmonic reactions and this is advantageous to find the optical tendency. Compared to having a particle gap or randomly arranged particle structures, densely and evenly packed structures can exhibit more uniform optical properties. Using the uniform properties, the structure can be applied to optical filtering applications. Therefore, in this paper, validation tests about metal nanoparticles and thin film structures are conducted for more accurate analysis. The optical properties of monolayer and bilayer noble metal nanoparticle structures with different diameters, packed in a uniform array, are investigated and their optical trends are analyzed. In addition, a thin film structure under identical conditions as metal nanoparticle structure is evaluated to confirm the improved optical characteristics.

AZO thin films are grown on a p-Si(111) substrate by RF magnetron sputtering. The characteristics of various thicknesses and heat treatment conditions are investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Hall effect and room-temperature photoluminescence (PL) measurements. The substrate temperature and the RF power during growth are kept constant at 400 ℃ and 200 W, respectively. AZO films are grown with a preferred orientation along the c-axis. As the thickness and the heat treatment temperature increases, the length of the c-axis decreases as Al3+ ions of relatively small ion radius are substituted for Zn2+ ions. At room temperature, the PL spectrum is separated into an NBE emission peak around 3.2 eV and a violet regions peak around 2.95 eV with increasing thickness, and the PL emission peak of 300 nm is red-shifted with increasing annealing temperature. In the XPS measurement, the peak intensity of Al2p and Oll increases with increasing annealing temperature. The AZO thin film of 100 nm thickness shows values of 6.5 × 1019 cm−3 of carrier concentration, 8.4 cm−2/V·s of mobility and 1.2 × 10−2 Ω·cm electrical resistivity. As the thickness of the thin film increases, the carrier concentration and the mobility increase, resulting in the decrease of resistivity. With the carrier concentration, mobility decreases when the heat treatment temperature increases more than 500 ℃.

Amorphous In-Ga-Zn-O (a-IGZO) thin film transistors, because of their relatively low mobility, have limits in attempts to fulfill high-end specifications for display backplanes. In-Zn-O (IZO) is a promising semiconductor material for high mobility device applications with excellent transparency to visible light region and low temperature process capability. In this paper, the effects of working pressure on the physical and electrical properties of IZO films and thin film transistors are investigated. The working pressure is modulated from 2 mTorr to 5 mTorr, whereas the other process conditions are fixed. As the working pressure increases, the extracted optical band gap of IZO films gradually decreases. Absorption coefficient spectra indicate that subgap states increase at high working pressure. Furthermore, IZO film fabricated at low working pressure shows smoother surface morphology. As a result, IZO thin film transistors with optimum conditions exhibit excellent switching characteristics with high mobility (≥ 30cm2/Vs) and large on/off ratio.

The effects of fast neutron irradiation on the electrical and optical properties of Li (3 at%) doped ZnSnO (ZTO) thin films fabricated using a sol-gel process are investigated. From the results of Li-ZTO TFT characteristics according to change of neutron irradiation time, the saturation mobility is found to increase and threshold voltage values shift to a negative direction from 1,000 s neutron irradiation time. X-ray photoelectron spectroscopy analysis of the O 1s core level shows that the relative area of oxygen vacancies is almost unchanged with different irradiation times. From the results of band alignment, it is confirmed that, due to the increase of electron carrier concentration, the Fermi level (EF) of the sample irradiated for 1,000 s is located at the position closest to the conduction band minimum. The increase in electron concentration is considered by looking at the shallow band edge state under the conduction band edge formed by fast neutron irradiation of more than 1,000 s.