We have investigated the structural and electrical properties of Ga-doped ZnO (GZO) thin films deposited by anRF magnetron sputtering at various RF powers from 50 to 90W. All the GZO thin films are grown as a hexagonal wurtzitephase with highly c-axis preferred parameters. The structural and electrical properties are strongly related to the RF power. Thegrain size increases as the RF power increases since the columnar growth of GZO thin film is enhanced at an elevated RFpower. This result means that the crystallinity of GZO is improved as the RF power increases. The resistivity of GZO rapidlydecreases as the RF power increases up to 70W and saturates to 90W. In contrast, the electron concentration of GZO increasesas the RF power increases up to 70W and saturates to 90W. GZO thin film shows the lowest resistivity of 2.2×10−4Ωcmand the highest electron concentration of 1.7×1021cm−3 at 90W. The mobility of GZO increases as the RF power increasessince the grain boundary scattering decreases due to the reduced density of the grain boundary at a high RF power. Thetransmittance of GZO thin films in the visible range is above 90%. GZO is a feasible transparent electrode for application asa transparent electrode for thin film solar cells.

We have investigated the structural and optical properties of Ga-doped ZnO (GZO) thin films deposited by RFmagnetron sputtering at various deposition temperatures from 100 to 500oC. All the GZO thin films are grown as a hexagonalwurtzite phase with highly c-axis preferred parameter. The structural and electrical properties are strongly related to depositiontemperature. The grain size increases with the increasing deposition temperature up to 400oC and then decreases at 500oC. Thedependence of grain size on the deposition temperature results from the variation of thermal activation energy. The resistivityof GZO thin film decreases with the increasing deposition temperature up to 300oC and then decreases up to 500oC. GZO thinfilm shows the lowest resistivity of 4.3×10−4Ωcm and highest electron concentration of 1.0×1021cm−3 at 300oC. The mobilityof GZO thin films increases with the increasing deposition temperature up to 400oC and then decreases at 500oC. GZO thinfilm shows the highest resistivity of 14.1cm2/Vs. The transmittance of GZO thin films in the visible range is above 87% atall the deposition temperatures. GZO is a feasible transparent electrode for the application to the transparent electrode of thinfilm solar cells.

Optical characteristics and structural changes depending on CuO content in phosphate glasses that are used in near-infrared (near-IR) filters were investigated. With phosphate glasses that contain 1-9 mol% CuO, changes in optical transmittance, optical absorption, and color coordinate were measured with a UV-VIS spectrophotometer. An XPS (X-ray photoelectron spectroscopy) analysis was performed to determine valence of copper ion that influences optical characteristics in near-IR filter glasses. Structural changes in glasses depending on CuO content were also analyzed by FT-IR (Fourier transform infrared) and Raman spectrophotometers. From the UV-VIS spectrophotometer results, strong absorption peaks at 220 & 900 nm were found and transmittance was decreased. The color coordinates of the glasses were shifted to the green color direction with CuO addition for increasing absorption of long wavelength range spectra, in spite of the amount of Cu2+, which gives a blue color to glasses, and which was increased in XPS results. Also, structural de-polymerization of glasses with CuO addition were found by FT-IR and Raman results.

For use in ultrasonic actuators, we investigated the structural and piezoelectric properties of (1 - x)Pb(Zr0.515Ti0.485)O3 - xPb(Sb1/2Nb1/2)O3 + 0.5 wt% MnO2 [(1 - x)PZT - xPSN + MnO2] ceramics with a variation of x (x = 0.02, 0.04, 0.06, 0.08). All the ceramics, which were sintered at 1250˚C for 2 h, showed a typical perovskite structure, implying that they were well synthesized. A homogeneous micro structure was also developed for the specimens, and their average grain size was slightly decreased to 1.3μm by increasing x to 0.8. Moreover, a second phase with a pyrochlore structure appeared when x was above 0.06, which resulted in the deterioration of their piezoelectric properties. However, the 0.96PZT-0.04PSN+MnO2 ceramics, which corresponds with a morphotropic phase boundary (MPB) composition in the (1 - x)PZT - xPSN + MnO2 system, exhibited good piezoelectric properties: a piezoelectric constant (d33) of 325 pC/N, an electromechanical coupling factor (kp) of 70.8%, and a mechanical quality factor (Qm) of 1779. The specimens with a relatively high curie temperature (Tc) of 305˚C also showed a significantly high dielectric constant (εr) value of 1109. Therefore, the 0.96PZT - 0.04PSN + MnO2 ceramics are suitable for use in ultrasonic vibrators.

In this report, the structural and optical properties of sol-gel derived MgxZn1-xO thin films upon changes in the composition and annealing temperature were investigated. The Mg2+ content and the annealing temperature were varied in the range of 0≤x≤0.35 and 400˚C≤T≤600˚C, respectively. The films exhibited a hexagonal wurtzite structure of a polycrystalline nature. The optical transmittance exceeded 85% and the optical band gap of the film was tuned as high as 3.84 eV at a value of x = 0.35 (annealed at 400˚C), which was evidently the maximum Mg2+ content for the single-phase polycrystalline MgxZn1-xO thin films prepared in this experiment. The optical band gap and photoluminescence emission were tailored to the higher energy side while maintaining crystallinity without a significant change of the lattice constant.

본 연구는 와플구조의 구조적 거동에 파악하고자 한다. 와플슬래브의 두께, 주요 보의 깊이와 기둥의 크기를 변수로 하여 와플구조의 모드형상과 고유진동수를 파악하고자 하였다. 또한 쉘요소와 입체요소를 사용한 유한요소모델의 해석결과를 비교하였다. i)레벨2에서 주요 보의 깊이가 증가함에 따라, ii)레벨3에서 와플슬래브 두께가 감소함에 따라 모드진동수는 증가하였다. 3차원 모델과 2차원 모델의 모드형상은 유사한 형상을 보였다. 또한, 3차원 모델과 2차원 모델사이의 모드진동수는 25%에서 36%의 차이를 보였다.

This study investigated the dependence of the various sputtering conditions (Ar pressure: 2~10 mTorr, Power: 50~150 W) and thickness (50~1200 nm) of Si thin film on the electrochemical properties, microstructural properties and the capacity fading of a Si thin film anode. A Si layer and a Ti buffer layer were deposited on Copper foil by RF-magnetron sputtering. At 10 mTorr, the 50 W sample showed the best capacity of 3323 mAh/g, while the 100 W sample showed the best capacity retention of 91.7%, also at 10 mTorr. The initial capacities and capacity retention in the samples apart from the 50W sample at 10 mTorr were enhanced as the Ar pressure and power increased. This was considered to be related to the change of the microstructure and the surface morphology by various sputtering conditions. In addition, thinner Si film anodes showed better cycling performance. This phenomenon is caused by the structural stress and peeling off of the Si layer by the high volume change of Si during the charge/discharge process.

The structural and physicochemical properties of dried aloe vera gel by DIS (dewatering impregnation soaking) process under optimum conditions were investigated. FT-IR spectra for dried samples of DIS aloes showed the typical patterns of standard aloe polysaccharide, and surface structures by SEM (scanning electron microscopy) were similar to a gel-like structure. In case of physicochemical properties of dried aloe samples by DIS process, solubilities and swelling powers of control (not osmotic treated aloe), DIS (S) and DIS (G), samples treated by osmotic solution of 60% sucrose/0.25% NaCl and 50% glucose/0.5% NaCl, were 48.3-57.3% and 8.3-11.7%, respectively, showing no significant differences among samples, but swelling power of DIS (PEG), sample treated by using 50% polyethylene glycol as an osmotic agent was about 5 times higher that of control. Also, water holding capacities of control, DIS (S) and DIS (G) were similar to each other, but that of DIS (PEG) was about 5 times higher that of control. Oil holding capacities of control and DIS aloes maintained the 50.9-86.4% levels of water holding capacities showing no significant differences among samples. Rehydration ratio of DIS (PEG) aloes were significantly dependent on the temperature of rehydrated solvent (water), and rehydration ratio of not-fileted aloe was about two folds higher than that of fileted aloe.

In this study, BaTiO3 thin films were grown by RF-magnetron sputtering, and the effects of a post-annealing process on the structural characteristics of the BaTiO3 thin films were investigated. For the crystallization of the grown thin films, post-annealing was carried out in air at an annealing temperature that varied from 500-1000˚C. XRD results showed that the highest crystal quality was obtained from the samples annealed at 600-700˚C. From the SEM analysis, no crystal grains were observed after annealing at temperatures ranging from 500 to 600˚C; and 80 nm grains were obtained at 700˚C. The surface roughness of the BaTiO3 thin films from AFM measurements and the crystal quality from Raman analysis also showed that the optimum annealing temperature was 700˚C. XPS results demonstrated that the binding energy of each element of the thin-film-type BaTiO3 in this study shifted with the annealing temperature. Additionally, a Ti-rich phenomenon was observed for samples annealed at 1000˚C. Depth-profiling analysis through a GDS (glow discharge spectrometer) showed that a stoichiometric composition could be obtained when the annealing temperature was in the range of 500 to 700˚C. All of the results obtained in this study clearly demonstrate that an annealing temperature of 700˚C results in optimal structural properties of BaTiO3 thin films in terms of their crystal quality, surface roughness, and composition.

The structural and electrical properties of amorphous BaSm2Ti4O12 (BSmT) films on a TiN/SiO2/Si substrate deposited using a RF magnetron sputtering method were investigated. The deposition of BSmT films was carried out at 300˚C in a mixed oxygen and argon (O2 : Ar = 1 : 4) atmosphere with a total pressure of 8.0 mTorr. In particular, a 45 nm-thick amorphous BSmT film exhibited a high capacitance density and low dissipation factor of 7.60 fF/μm2 and 1.3%, respectively, with a dielectric constant of 38 at 100 kHz. Its capacitance showed very little change, even in GHz ranges from 1.0 GHz to 6.0 GHz. The quality factor of the BSmT film was as high as 67 at 6 GHz. The leakage current density of the BSmT film was also very low, at approximately 5.11 nA/cm2 at 2 V; its conduction mechanism was explained by the the Poole-Frenkel emission. The quadratic voltage coefficient of capacitance of the BSmT film was approximately 698 ppm/V2, which is higher than the required value (<100 ppm/V2) for RF application. This could be reduced by improving the process condition. The temperature coefficient of capacitance of the film was low at nearly 296 ppm/˚C at 100 kHz. Therefore, amorphous BSmT grown on a TiN substrate is a viable candidate material for a metal-insulator-metal capacitor.

The effects of the deposition and annealing temperature on the structural, electrical and opticalproperties of Ag doped ZnO (ZnO:Ag) thin films were investigated. All of the films were deposited with a 2wt%Ag2O-doped ZnO target using an e-beam evaporator. The substrate temperature varied from room temperature(RT) to 250oC. An undoped ZnO thin film was also fabricated at 150oC as a reference. The as-grown films wereannealed in temperatures ranging from 350 to 650oC for 5h in air. The Ag content in the film decreased asthe deposition and the post-annealing temperature increased due to the evaporation of the Ag in the film.During the annealing process, grain growth occurred, as confirmed from XRD and SEM results. The as-grownfilm deposited at RT showed n-type conduction; however, the films deposited at higher temperatures showedp-type conduction. The films fabricated at 150oC revealed the highest hole concentration of 3.98×1019cm-3 anda resistivity of 0.347Ω·cm. The RT PL spectra of the as-grown ZnO:Ag films exhibited very weak emissionintensity compared to undoped ZnO; moreover, the emission intensities became stronger as the annealingtemperature increased with two main emission bands of near band-edge UV and defect-related greenluminescence exhibited. The film deposited at 150oC and annealed at 350oC exhibited the lowest value of Ivis/Iuv of 0.05.

Multilayered coatings on tungsten carbide cutting tools are widely used for enhancing cutting performance. In this paper, we review the CVD TiC/TiCN multilayer as a function of the multilayer period. The TiC/TiCN multilayers in initial stage show preferred (220) orientation but shifts to (200) orientation with decreasing multilayer period. The nanohardness of TiC/TiCN multilayers were found to increase with decreasing multilayer period and shows a maximum of 23.8 GPa at a period = 33.5 nm.

Fabrication and Properties of Nano-structured Ceramics