In this study, gradient porous Al-Cu sintered body was fabricated by powder metallurgy processing. Al-Cu powder mixtures were prepared by low energy ball milling with various milling time. After ball milling for 3h, the shape of powder mixtures changed to spherical type with size of 100~500 . Subsequently, Al-Cu powder mixtures were classified (under 150, 150~300 and over 300 ) and compacted (20, 50 and 100 MPa). Then, they were sintered at for various holding time (10, 30, 60 and 120 min) in atmosphere. The sintered bodies had 32~45% of porosity. As a result, the optimum holding time was determined to be 60 min at and sintered bodies with various porosity were obtained by controlling the compacting pressure.

In order to fabricate the porous metal with controlled pore characteristics, unique processing by using metal oxide powder as the source and camphene as the sublimable material is introduced. CuO powder was selected as the source for the formation of Cu metal via hydrogen reduction. Camphene-based CuO slurry, prepared by milling at with a small amount of dispersant, was frozen at . Pores were generated subsequently by sublimation of the camphene. The green body was hydrogen-reduced at for 30 min, and sintered at for 1 h. Microstructural analysis revealed that the sintered Cu showed aligned large pore channels parallel to the camphene growth direction, and fine pores are formed around the large pore. Also, it showed that the pore size was controllable by the slurry concentration.

Inkjet printing was successfully done using Cu nano powder ink after these Cu nano powders were dry-coated with 1-octanethiol for oxidation prevention. 1-octanethiol, which is Self-Assembled Multi-layers (SAMs), was coated approximately 10-nm thick on the surface of Cu nano powders. 1-Octanol, which has the same chain length as that for 1-octanethiol, was used as a solvent to make the ink for inkjet printing. As a result, the fabricated ink was dispersed for about 4 weeks, and after printing and heat treatment at for 4 hours, the resistivity for the printed pattern was measured to be .

In order to make a (CZTSe) sputtering target sintered for solar cell application, synthesis of CZTSe compound by solid state reaction of Cu, Zn, Sn and Se mixed powders and effects of ball milling condition on sinterability such as ball size, combination of ball size, ball milling time and sintering temperature, was investigated. As a result of this research, sintering at after ball milling using mixed balls of 1 mm and 3 mm for 72 hours was the optimum condition to synthesis near stoichiometric composition of and to prepare sintered pellet with high density relatively.

As the performance of microelectronic devices is improved, the use of copper as a heat dissipation member is increasing due to its good thermal conductivity. The high thermal conductivity of copper, however, leads to difficulties in the joining process. Satisfactory bonding with copper is known to be difficult, especially if high shear and peel strengths are desired. The primary reason is that a copper oxide layer develops rapidly and is weakly attached to the base metal under typical conditions. Thus, when a clean copper substrate is bonded, the initial strength of the joint is high, but upon environmental exposure, an oxide layer may develop, which will reduce the durability of the joint. In this study, an epoxy adhesive formulation was investigated to improve the strength and reliability of a copper to copper joint. Epoxy hardeners such as anhydride, dihydrazide, and dicyandiamide and catalysts such as triphenylphosphine and imidazole were added to an epoxy resin mixture of DGEBA and DGEBF. Differential scanning calorimetry (DSC) analyses revealed that the curing temperatures were dependent on the type of hardener rather than on the catalyst, and higher heat of curing resulted in a higher Tg. The reliability of the copper joint against a high temperature and high humidity environment was found to be the lowest in the case of dihydrazide addition. This is attributed to its high water permeability, which led to the formation of a weak boundary layer of copper oxide. It was also found that dicyandiamide provided the highest initial joint strength and reliability while anhydride yielded intermediate performance between dicyandiamide and dihydrazide.

The present study was carried out to evaluate the microstructural and mechanical properties of cross-roll rolled pure copper sheets, and the results were compared with those obtained for conventionally rolled sheets. For this work, pure copper (99.99 mass%) sheets with thickness of 5 mm were prepared as the starting material. The sheets were cold rolled to 90% thickness reduction and subsequently annealed at 400˚C for 30 min. Also, to analyze the grain boundary character distributions (GBCDs) on the materials, the electron back-scattered diffraction (EBSD) technique was introduced. The resulting cold-rolled and annealed sheets had considerably finer grains than the initial sheets with an average size of 100 μM. In particular, the average grain size became smaller by cross-roll rolling (6.5 μM) than by conventional rolling (9.8 μM). These grain refinements directly led to enhanced mechanical properties such as Vickers micro-hardness and tensile strength, and thus the values showed greater increases upon cross-roll rolling process than after conventional rolling. Furthermore, the texture development of<112>//ND in the cross-roll rolling processed material provided greater enhancement of mechanical properties relative to the case of the conventional rolling processed material. In the present study, we systematically discuss the enhancement of mechanical properties in terms of grain refinement and texture distribution developed by the different rolling processes.

Effect of Cu content on microstructural and magnetic properties of a (wt.%), (x = 0.2, 0.3, 0.4, 0.5) strip-cast was studied. The average inter-lamellar spacing in the free surface and wheel side of the strip cast increased as the Cu content increases. The grain uniformity, the grain alignment, and (00L) texture of the strip cast increased with Cu contents up to 0.4 wt.%. These microstructural changes were attributed to the decrease of the effective cooling rate of the melted alloy caused by the decrease of the melting temperature of resulting from Cu addition. Coercivity and remanence were increased because of the grain alignment and (00L) texture improvement with Cu contents up to 0.4 wt.%.

The microstructure and Cu diffusion barrier property of Ta-Si-N films for various Si and N compositions were studied. Ta-Si-N films of a wide range of compositions (Si: 0~30 at.%, N: 0~55 at.%) were deposited by DC magnetron reactive sputtering of Ta and Si targets. Deposition rates of Ta and Si films as a function of DC target current density for various N2/(Ar+N2) flow rate ratios were investigated. The composition of Ta-Si-N films was examined by wavelength dispersive spectroscopy (WDS). The variation of the microstructure of Ta-Si-N films with Si and N composition was examined by X-ray diffraction (XRD). The degree of crystallinity of Ta-Si-N films decreased with increasing Si and N composition. The Cu diffusion barrier property of Ta-Si-N films with more than sixty compositions was investigated. The Cu(100 nm)/Ta-Si-N(30 nm)/Si structure was used to investigate the Cu diffusion barrier property of Ta-Si-N films. The microstructure of all Cu/Ta-Si-N/Si structures after heat treatment for 1 hour at various temperatures was examined by XRD. A contour map that shows the diffusion barrier failure temperature for Cu as a function of Si and N composition was completed. At Si compositions ranging from 0 to 15 at.%, the Cu diffusion barrier property was best when the composition ratio of Ta + Si and N was almost identical.

Cu(In,Ga)Se2(CIGS) photovoltaic thin films were electrodeposited on Mo/glass substrates with an aqueous solution containing 2 mM CuCl2, 8 mM InCl3, 20 mM GaCl3 and 8mM H2SeO3 at the electrodeposition potential of -0.6 to -1.0 V(SCE) and pH of 1.8. The best chemical composition of Cu1.05In0.8Ga0.13Se2 was found to be achieved at -0.7 V(SCE). The precursor Cu-In-Ga-Se films were annealed for crystallization to chalcopyrite structure at temperatures of 100-500˚C under Ar gas atmosphere. The chemical compositions, microstructures, surface morphologies, and crystallographic structures of the annealed films were analyzed by EPMA, FE-SEM, AFM, and XRD, respectively. The precursor Cu-In-Ga-Se grains were grown sparsely on the Mo-back contact and also had very rough surfaces. However, after annealing treatment beginning at 200˚C, the empty spaces between grains were removed and the grains showed well developed columnar shapes with smooth surfaces. The precursor Cu-In-Ga-Se films were also annealed at the temperature of 500˚C for 60 min under Se gas atmosphere to suppress the Se volatilization. The Se amount on the CIGS film after selenization annealing increased above the Se amount of the electrodeposited state and the MoSe2 phase occurred, resulting from the diffusion of Se through the CIGS film and interaction with Mo back electrode. However, the selenization-annealed films showed higher crystallinity values than did the films annealed under Ar atmosphere with a chemical composition closer to that of the electrodeposited state.

Cu-Sn based alloys were manufactured by gas atomization spray casting route in order to achieve a fine scale microstructure and a high tensile strength. The spray cast Cu-10Sn-2Ni-0.2Si alloy had an equiaxed grain microstructure, with no formation of brittle phase. Aging treatment promoted the precipitation of finely distributed particles corresponding to intermetallic phase throughout the -(CuSn) matrix. The cold-rolled Cu-Sn-Ni-Si alloy had a very high tensile strength of 1200 MPa and an elongation of 5%. Subsequent aging treatment at for 1h slightly reduced the tensile strength to 700 MPa and remarkably increased the elongation up to 30%. This result has been explained by coarsening the precipitates due to over aging and reducing the dislocation density due to annealing effects.

In this study, Cu-10Sn and Cu-10Sn-2Ni-0.2Si alloys have been manufactured by spray casting in order to achieve a fine scale microstructure and high tensile strength, and investigated in terms of microstructural evolution, aging characteristics and tensile properties. Spray cast alloys had a much lower microhardness than continuous cast billet because of an improved homogenization and an extended Sn solid solubility. Spray cast Cu-Sn-Ni-Si alloy was characterized by an equiaxed grain microstructure with a small-sized (Ni, Si)-rich precipitates. Cold rolling of Cu-Sn-Ni-Si alloy increased a tensile strength to 1220 MPa, but subsequent ageing treatment reduced a ultimate tensile strength to 780 MPa with an elongation of 18%.

The Cu nanofluid in ethylene glycol was prepared by electrical explosion of wire, a novel one-step method. The X-ray diffraction, field emission scanning electron microscope and transmission electron microscope were used to study the properties of Cu nanoparticles. The results showed that the nanoparticles were consisted of pure face-centered cubic structure and near spherical shape with average grain size of 65 nm. Ultraviolet-visible spectroscopy (UV-Vis) confirmed Cu nanoparticles with a single absorbance peak of Cu surface plasmon resonance band at 600 nm. The nanofluid was found to be stable due to high positive zeta potential value, +51 mV. The backscattering level of nanofluid in static stationary was decreased about 2% for 5 days. The thermal conductivity measurement showed that Cu-ethylene glycol nanofluid with low concentration of nanoparticles had higher thermal conductivity than based fluid. The enhancement of thermal conductivity of nanofluid at a volume fraction of 0.1% was approximately 5.2%.

The selenization process has been a promising method for low-cost and large-scale production of high quality CIGS film. However, there is the problem that most Ga in the CIGS film segregates near the Mo back contact. So the solar cell behaves like a CuInSe2 and lacks the increased open-circuit voltage. In this study we investigated the Ga distribution in CIGS films by using the Ga2Se3 layer. The Ga2Se3 layer was applied on the Cu-In-Ga metal layer to increase Ga content at the surface of CIGS films and to restrict Ga diffusion to the CIGS/Mo interface with Ga and Se bonding. The layer made by thermal evaporation was showed to an amorphous Ga2Se3 layer in the result of AES depth profile, XPS and XRD measurement. As the thickness of Ga2Se3 layer increased, a small-grained CIGS film was developed and phase seperation was showed using SEM and XRD respectively. Ga distributions in CIGS films were investigated by means of AES depth profile. As a result, the [Ga]/[In+Ga] ratio was 0.2 at the surface and 0.5 near the CIGS/Mo interface when the Ga2Se3 thickness was 220 nm, suggesting that the Ga2Se3 layer on the top of metal layer is one of the possible methods for Ga redistribution and open circuit voltage increase.

Ethylene glycol-based Cu nanofluids were prepared by pulsed wire evaporation (PWE) method. The structural properties of Cu nanoparticles were studied by X-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM). The average diameter and Brunauer Emmett Teller (BET) surface area of Cu nanoparticles were about 100 nm and , respectively. The thermal conductivity and viscosity of copper nanofluid were measured as functions of Cu concentration and temperature. As the volume fraction of Cu nanoparticles increased, both the enhanced ratios of thermal conductivity and viscosity of Cu nanofluids increased. As the temperature increased, the enhanced ratio of thermal conductivity increased, but that ratio of viscosity decreased.

As an alternative to the W plug used in MOSFETs, a Cu plug with a NiSi contact using Ta / TaN as a diffusion barrier is currently being considered. Conventionally, Ni was first deposited and then NiSi was formed, followed by the barrier and Cu deposition. In this study, Ti was employed as a barrier material and simultaneous formation of the NiSi contact and Cu plug / Ti barrier was attempted. Cu(100 nm) / Ti / Ni(20 nm) with varying Ti thicknesses were deposited on a Si substrate and annealed at 4000˚C for 30 min. For comparison, Cu/Ti/NiSi thin films were also formed by the conventional method. Optical Microscopy (OM), Scanning Probe Microscopy (SPM), X-Ray Diffractometry (XRD), and Auger Electron Microscopy (AES) analysis were performed to characterize the inter-diffusion properties. For a Ti interlayer thicker than 50 nm, the NiSi formation was incomplete, although Cu diffusion was inhibited by the Ti barrier. For a Ti thickness of 20 nm and less, an almost stoichiometric NiSi contact along with the Cu plug and Ti barrier layers was formed. The results were comparable to that formed by the conventional method and showed that this alternative process has potential as a formation process for the Cu plug/Ti barrier/NiSi contact system.

The composites of alginate, carbon nanotube, and iron(III) oxide were prepared for the removal of heavy metal in aqueous pollutant. Both alginate and carbon nanotube were used as an adsorbent material and iron oxide was introduced for the easy recovery after removal of heavy metal to eliminate the secondary pollution. The morphology of composites was investigated by FE-SEM showing the carbon nanotubes coated with alginate and the iron oxide dispersed in the alginate matrix. The ferromagnetic properties of composites were shown by including iron(III) oxide additive. The copper ion removal was investigated with ICP AES. The copper ion removal efficiency increased greatly over 60% by using alginate-carbon nanotube composites.

A study was conducted to determine the effects of the cattle manure (CM) application on the botanical composition and micro-mineral contents (Fe, Mn, Cu, Zn) of grazing pasture at the experimental field of Livestock Division, Subtropical Animal Experiment Station, National Institute of Animal Science from year 2003 to 2005. The experiment was arranged in a randomized complete block design with three replications. The treatment consisted of T1: 100% chemical fertilizer (CF 100%), T2: 50% CF +50% CM, T3: 25% CF +75% CM, T4: 100% cattle manure (CM 100%), T5: 100% CM (1st yr.)+ 100% CF (2nd yr.) + 100% CM (3rd yr.), T6: 100% CM (1st yr.)+ 100% CF (2nd yr.)+ 100% CF (3rd yr.). The botanical composition of grassland for grass, legumes, and weeds showed that the rate of legumes was increased in all treatments. The weeds rate in T4 was the highest in comparison to the other treatments. For micro-mineral contents T5 showed the highest average Fe contents of 262.08 ppm and T1 showed the lowest (199.20 ppm). Mn contents was the highest in T1 among the other treatments. Zn contents was the highest in T3 as compared with other treatments. Cu contents was the highest in T6 as compared with other treatments. The results of this experiments indicated that micro-mineral contents of change was effect of legumes increased than treatment

Sn doped In2O3 (ITO) and ITO/Cu/ITO (ICI) multilayer films were prepared on glass substrates with a reactive radiofrequency (RF) magnetron sputter without intentional substrate heating, and then the influence of the Cu interlayer on themethanol gas sensitivity of the ICI films were considered. Although both ITO and ICI film sensors had the same thicknessof 100nm, the ICI sensors had a sandwich structure of ITO 50nm/Cu 5nm/ITO 45nm. The ICI films showed a ten timeshigher carrier density than that of the pure ITO films. However, the Cu interlayer may also have caused the decrement of carriermobility because the interfaces between the ITO and Cu interlayer acted as a barrier to carrier movement. Although the ICIfilms had two times a lower mobility than that of the pure ITO films, the ICI films had a higher conductivity of 3.6·10-4Ωcmdue to a higher carrier density. The changes in the sensitivity of the film sensors caused by methanol gas ranging from 50 to500ppm were measured at room temperature. The ICI sensors showed a higher gas sensitivity than that of the ITO single layersensors. Finally, it can be concluded that the ICI film sensors have the potential to be used as improved methanol gas sensors.

A MnSOD gene was cloned from the fall webworm, H. cunea. The MnSOD cDNAs encode precursor proteins of 215 amino acid residues. The deduced amino acid sequences of the H. cunea MnSOD cDNA showed 76% identity to B. mori MnSOD and 62-56% to MnSOD sequences from other organisms. MnSOD and Cu/ZnSOD in H. cunea is expressed from all tissues. MnSOD expression is changed at a trace level in infected larvae, while Cu/ZnSOD expression is strongly changed against bacteria, and fungi. The expression level of Cu/ZnSOD increased by different artificial photoperiod (24L:0D), UV irradiation (312nm), and starvation condition, while the expression level of MnSOD only increased by starvation condition. Also, expression of MnSOD and Cu/ZnSOD showed no significant change in 0L:24D condition. In addition to expression levels of Cu/ZnSOD in H. cunea significantly increased by temperature stress and injection with paraquat, but reduced by injection with 10% H2O2. The expression level of MnSOD significantly increased by temperature stress and reduced by injection with 10% H2O2 and paraquat.

Scale generation in the inside of a pipe IS restricted by reduction and oxidation(REDOX) reaction of alloyed metal of Cu-Zn. To measure the scale generating rate in the 1.67 mm of inside diameter of stainless steel tube, 300 ppm of CaCO3 solution is circulated in the REDOX reactor and stainless steel tube in the order. In the case of CaCO3 solution treated by REDOX reactor, flowing is maintained without plugging in the stainless steel tube, and the concentration of Cu and Zn in the circulating solution showed less than 1 ppm, which is equal to that of untreated by REDOX reactor. The crystal type of CaCO3 generated by crystalline nucleus of Cu or Zn, mostly showed aragonite type.